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Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond
Authors:
James M. Higbie,
John D. Perreault,
Victor M. Acosta,
Chinmay Belthangady,
Paul Lebel,
Moonhee H. Kim,
Khoa Nguyen,
Vasiliki Demas,
Vikram Bajaj,
Charles Santori
Abstract:
Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, non-bleaching emission line at 738\,nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We have measured the two-photon fluorescence cross section of a…
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Silicon-vacancy color centers in nanodiamonds are promising as fluorescent labels for biological applications, with a narrow, non-bleaching emission line at 738\,nm. Two-photon excitation of this fluorescence offers the possibility of low-background detection at significant tissue depth with high three-dimensional spatial resolution. We have measured the two-photon fluorescence cross section of a negatively-charged silicon vacancy (SiV$^-$) in ion-implanted bulk diamond to be $0.74(19) \times 10^{-50}{\rm cm^4\;s/photon}$ at an excitation wavelength of 1040\,nm. In comparison to the diamond nitrogen vacancy (NV) center, the expected detection threshold of a two-photon excited SiV center is more than an order of magnitude lower, largely due to its much narrower linewidth. We also present measurements of two- and three-photon excitation spectra, finding an increase in the two-photon cross section with decreasing wavelength, and discuss the physical interpretation of the spectra in the context of existing models of the SiV energy-level structure.
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Submitted 5 April, 2017;
originally announced April 2017.
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An upper limit on the lateral vacancy diffusion length in diamond
Authors:
J. O. Orwa,
K. Ganesan,
J. Newnham,
C. Santori,
P. Barclay,
K. M. C. Fu,
R. G. Beausoleil,
I. Aharonovich,
B. A. Fairchild,
P. Olivero,
A. D. Greentree,
S. Prawer
Abstract:
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted r…
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Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted region. This could be due to fast diffusion of vacancies from the implanted area during annealing or to a geometric effect related to ion scattering around the mask edges. For quantum and single-atom devices, stray ion damage can be deleterious and must be minimized. In order to profile the distribution of implantation-induced damage, we have used the nitrogen-vacancy colour centre as a sensitive marker for vacancy concentration and distribution following MeV He ion implantation into diamond and annealing. Results show that helium atoms implanted through a mask clamped to the diamond surface are scattered underneath the mask to distances in the range of tens of micrometers from the mask edge. Implantation through a lithographically defined and deposited mask, with no spacing between the mask and the substrate, significantly reduces the scattering to <5 m but does not eliminate it. These scattering distances are much larger than the theoretically estimated vacancy diffusion distance of 260 nm under similar conditions. This paper shows that diffusion, upon annealing, of vacancies created by ion implantation in diamond is limited and the appearance of vacancies many tens of micrometers from the edge of the mask is due to scattering effects.
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Submitted 25 August, 2016;
originally announced August 2016.
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The phase transition in VO2 probed using x-ray, visible and infrared radiations
Authors:
Suhas Kumar,
John Paul Strachan,
A. L. David Kilcoyne,
Tolek Tyliszczak,
Matthew D. Pickett,
Charles Santori,
Gary Gibson,
R. Stanley Williams
Abstract:
Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical informa…
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Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here we use transmission of spatially averaged infrared (λ=1500 nm) and visible (λ=500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays (λ=2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occur at significantly lower temperatures than the Mott transition; and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.
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Submitted 19 February, 2016; v1 submitted 30 December, 2015;
originally announced December 2015.
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Radiative properties of multi-carrier bound excitons in GaAs
Authors:
Todd Karin,
Russell Barbour,
Charles Santori,
Yoshihisa Yamamoto,
Yoshiro Hirayama,
Kai-Mei C. Fu
Abstract:
Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in d…
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Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be ${T_o (1,3,3/4)}$ where ${T_o = (0.61 \pm 0.12) \text{ns}}$. Furthermore, we provide an estimate of the intra-level and inter-level exciton spin-relaxation rates.
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Submitted 5 November, 2014;
originally announced November 2014.
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Fast carrier dynamics in GaAs photonic crystals near the material band edge at room temperature
Authors:
Ranojoy Bose,
Jason S. Pelc,
Charles M. Santori,
Sonny Vo,
Raymond G. Beausoleil
Abstract:
We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift in the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the…
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We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift in the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the GaAs band edge. The probe transmission is modified for an estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.
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Submitted 30 October, 2014;
originally announced October 2014.
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Quantum noise in large-scale coherent nonlinear photonic circuits
Authors:
Charles Santori,
Jason S. Pelc,
Raymond G. Beausoleil,
Nikolas Tezak,
Ryan Hamerly,
Hideo Mabuchi
Abstract:
A semiclassical simulation approach is presented for studying quantum noise in large-scale photonic circuits incorporating an ideal Kerr nonlinearity. A circuit solver is used to generate matrices defining a set of stochastic differential equations, in which the resonator field variables represent random samplings of the Wigner quasi-probability distributions. Although the semiclassical approach i…
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A semiclassical simulation approach is presented for studying quantum noise in large-scale photonic circuits incorporating an ideal Kerr nonlinearity. A circuit solver is used to generate matrices defining a set of stochastic differential equations, in which the resonator field variables represent random samplings of the Wigner quasi-probability distributions. Although the semiclassical approach involves making a large-photon-number approximation, tests on one- and two-resonator circuits indicate satisfactory agreement between the semiclassical and full-quantum simulation results in the parameter regime of interest. The semiclassical model is used to simulate random errors in a large-scale circuit that contains 88 resonators and hundreds of components in total, and functions as a 4-bit ripple counter. The error rate as a function of on-state photon number is examined, and it is observed that the quantum fluctuation amplitudes do not increase as signals propagate through the circuit, an important property for scalability.
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Submitted 27 May, 2014; v1 submitted 24 February, 2014;
originally announced February 2014.
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Raman quantum memory based on an ensemble of nitrogen-vacancy centers coupled to a microcavity
Authors:
Khabat Heshami,
Charles Santori,
Behzad Khanaliloo,
Chris Healey,
Victor M. Acosta,
Paul E. Barclay,
Christoph Simon
Abstract:
We propose a scheme to realize optical quantum memories in an ensemble of nitrogen-vacancy centers in diamond that are coupled to a micro-cavity. The scheme is based on off-resonant Raman coupling, which allows one to circumvent optical inhomogeneous broadening and store optical photons in the electronic spin coherence. This approach promises a storage time of order one second and a time-bandwidth…
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We propose a scheme to realize optical quantum memories in an ensemble of nitrogen-vacancy centers in diamond that are coupled to a micro-cavity. The scheme is based on off-resonant Raman coupling, which allows one to circumvent optical inhomogeneous broadening and store optical photons in the electronic spin coherence. This approach promises a storage time of order one second and a time-bandwidth product of order 10$^7$. We include all possible optical transitions in a 9-level configuration, numerically evaluate the efficiencies and discuss the requirements for achieving high efficiency and fidelity.
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Submitted 18 December, 2013;
originally announced December 2013.
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Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators
Authors:
Jason S. Pelc,
Kelley Rivoire,
Sonny Vo,
Charles Santori,
David A. Fattal,
Raymond G. Beausoleil
Abstract:
We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microrin…
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We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in undoped crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.
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Submitted 14 February, 2014; v1 submitted 21 October, 2013;
originally announced October 2013.
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Electromagnetically-induced transparency in a diamond spin ensemble enables all-optical electromagnetic field sensing
Authors:
Victor M. Acosta,
Kasper Jensen,
Charles Santori,
Dmitry Budker,
Rymond G. Beausoleil
Abstract:
We use electromagnetically-induced transparency (EIT) to probe the narrow electron-spin resonance of nitrogen-vacancy centers in diamond. Working with a multi-pass diamond chip at temperatures 6-30 K, the zero-phonon absorption line (637 nm) exhibits an optical depth of 6 and inhomogenous linewidth of ~30 GHz full-width-at-half-maximum (FWHM). Simultaneous optical excitation at two frequencies sep…
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We use electromagnetically-induced transparency (EIT) to probe the narrow electron-spin resonance of nitrogen-vacancy centers in diamond. Working with a multi-pass diamond chip at temperatures 6-30 K, the zero-phonon absorption line (637 nm) exhibits an optical depth of 6 and inhomogenous linewidth of ~30 GHz full-width-at-half-maximum (FWHM). Simultaneous optical excitation at two frequencies separated by the ground-state zero-field splitting (2.88 GHz), reveals EIT resonances with a contrast exceeding 6% and FWHM down to 0.4 MHz. The resonances provide an all-optical probe of external electric and magnetic fields with a projected photon-shot-noise-limited sensitivity of 0.2 V/cm/sqrt(Hz) and 0.1 nT/sqrt(Hz), respectively. Operation of a prototype diamond-EIT magnetometer measures a noise floor of less than 1 nT/sqrt(Hz) for frequencies above 10 Hz and Allan deviation of 1.3 +/- 1.1 nT for 100 s intervals. The results demonstrate the potential of diamond-EIT devices for applications ranging from quantum-optical memory to few-photon nonlinear optics, precision measurement, and tests of fundamental physics.
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Submitted 24 May, 2013; v1 submitted 27 March, 2013;
originally announced March 2013.
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Absolute magnetometry based on quantum beats in diamond nitrogen-vacancy centers
Authors:
Kejie Fang,
Victor M. Acosta,
Charles Santori,
Zhihong Huang,
Kohei M. Itoh,
Hideyuki Watanabe,
Shinichi Shikata,
Raymond G. Beausoleil
Abstract:
We demonstrate an absolute magnetometer immune to temperature fluctuation and strain inhomogeneity, based on quantum beats in the ground state of nitrogen-vacancy centers in diamond. We apply this technique to measure low-frequency magnetic field noise using a single nitrogen-vacancy center located within 500 nm of the surface of an isotopically-pure (99.99% C12) diamond. The photon-shot-noise lim…
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We demonstrate an absolute magnetometer immune to temperature fluctuation and strain inhomogeneity, based on quantum beats in the ground state of nitrogen-vacancy centers in diamond. We apply this technique to measure low-frequency magnetic field noise using a single nitrogen-vacancy center located within 500 nm of the surface of an isotopically-pure (99.99% C12) diamond. The photon-shot-noise limited sensitivity achieves 38 nT/Hz^1/2 for 4.45 s acquisition time, a factor of 2^1/2 better than the implementation which uses only two spin levels. For long acquisition times (>10 s), we realize up to a factor of 15 improvement in magnetic sensitivity, which demonstrates the robustness of our technique against thermal drifts. Applying our technique to nitrogen-vacancy center ensembles, we eliminate dephasing from longitudinal strain inhomogeneity, resulting in a factor of 2.3 improvement in sensitivity.
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Submitted 6 December, 2012;
originally announced December 2012.
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Coupling of Nitrogen-Vacancy Centers to Photonic Crystal Cavities in Monocrystalline Diamond
Authors:
Andrei Faraon,
Charles Santori,
Zhihong Huang,
Victor M. Acosta,
Raymond G. Beausoleil
Abstract:
The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ~70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a sin…
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The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ~70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a single nitrogen-vacancy center. The linewidth of the coupled nitrogen-vacancy center and the spectral diffusion are characterized using high-resolution photoluminescence and photoluminescence excitation spectroscopy.
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Submitted 3 February, 2012;
originally announced February 2012.
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Production of oriented nitrogen-vacancy color centers in synthetic diamond
Authors:
A. M. Edmonds,
U. F. S. D'Haenens-Johansson,
M. E. Newton,
K. -M. C. Fu,
C. Santori,
R. G. Beausoleil,
D. J. Twitchen,
M. L. Markham
Abstract:
The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5 %) incorporated during homoepitaxial diamond growth by Chemical Vapor Deposition (CVD) is in the form of undecorated NV- centers. Furthermore, studies on CVD dia…
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The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5 %) incorporated during homoepitaxial diamond growth by Chemical Vapor Deposition (CVD) is in the form of undecorated NV- centers. Furthermore, studies on CVD diamond grown on (110) oriented substrates show a near 100% preferential orientation of NV- centers along only the [111] and [-1-11] directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the NVH- is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from 4 orientations to 2 orientations should lead to increased optically-detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.
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Submitted 24 December, 2011;
originally announced December 2011.
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Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond
Authors:
V. M. Acosta,
C. Santori,
A. Faraon,
Z. Huang,
K. -M. C. Fu,
A. Stacey,
D. A. Simpson,
S. Tomljenovic-Hanic,
K. Ganesan,
A. D. Greentree,
S. Prawer,
R. G. Beausoleil
Abstract:
We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transition…
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We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales greater than ~100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultra-pure diamond). These techniques should improve the entanglement success probability in quantum communications protocols.
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Submitted 3 April, 2012; v1 submitted 22 December, 2011;
originally announced December 2011.
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Hybrid nanocavities for resonant enhancement of color center emission in diamond
Authors:
Paul E. Barclay,
Kai-Mei C. Fu,
Charles Santori,
Andrei Faraon,
Raymond G. Beausoleil
Abstract:
Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negativ…
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Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negatively charged NV center implanted near the diamond surface. When the nanocavity is on resonance, the zero phonon line intensity is enhanced by approximately an order of magnitude, and the spontaneous emission lifetime of the NV is reduced as much as 18%, corresponding to a 6.3X enhancement of emission in the zero photon line.
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Submitted 25 May, 2011;
originally announced May 2011.
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Low-temperature tapered-fiber probing of diamond NV ensembles coupled to GaP microcavities
Authors:
K. -M. C. Fu,
P. E. Barclay,
C. Santori,
A. Faraon,
R. G. Beausoleil
Abstract:
In this work we present a platform for testing the device performance of a cavity-emitter system, using an ensemble of emitters and a tapered optical fiber. This method provides high-contrast spectra of the cavity modes, selective detection of emitters coupled to the cavity, and an estimate of the device performance in the single- emitter case. Using nitrogen-vacancy (NV) centers in diamond and a…
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In this work we present a platform for testing the device performance of a cavity-emitter system, using an ensemble of emitters and a tapered optical fiber. This method provides high-contrast spectra of the cavity modes, selective detection of emitters coupled to the cavity, and an estimate of the device performance in the single- emitter case. Using nitrogen-vacancy (NV) centers in diamond and a GaP optical microcavity, we are able to tune the cavity onto the NV resonance at 10 K, couple the cavity-coupled emission to a tapered fiber, and measure the fiber-coupled NV spontaneous emission decay. Theoretically we show that the fiber-coupled average Purcell factor is 2-3 times greater than that of free-space collection; although due to ensemble averaging it is still a factor of 3 less than the Purcell factor of a single, ideally placed center.
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Submitted 25 February, 2011;
originally announced February 2011.
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Resonant enhancement of the zero-phonon emission from a color center in a diamond cavity
Authors:
Andrei Faraon,
Paul E. Barclay,
Charles Santori,
Kai-Mei C. Fu,
Raymond G. Beausoleil
Abstract:
We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated…
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We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated diamond photonics.
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Submitted 17 December, 2010;
originally announced December 2010.
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Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation
Authors:
K. -M. C. Fu,
C. Santori,
P. E. Barclay,
R. G. Beausoleil
Abstract:
The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to…
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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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Submitted 29 January, 2010;
originally announced January 2010.
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Observation of the dynamic Jahn-Teller effect in the excited states of nitrogen-vacancy centers in diamond
Authors:
Kai-Mei C. Fu,
Charles Santori,
Paul E. Barclay,
Lachlan J. Rogers,
Neil B. Manson,
Raymond G. Beausoleil
Abstract:
The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant d…
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The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant dephasing mechanism for the NV optical transitions at low temperatures.
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Submitted 17 December, 2009; v1 submitted 2 October, 2009;
originally announced October 2009.
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Chip-based microcavities coupled to NV centers in single crystal diamond
Authors:
Paul E. Barclay,
Kai-Mei C. Fu,
Charles Santori,
Raymond G. Beausoleil
Abstract:
Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000.
Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000.
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Submitted 14 August, 2009;
originally announced August 2009.
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On the indistinguishability of Raman photons
Authors:
Charles Santori,
David Fattal,
Kai-Mei C. Fu,
Paul E. Barclay,
Raymond G. Beausoleil
Abstract:
We provide a theoretical framework to study the effect of dephasing on the quantum indistinguishability of single photons emitted from a coherently driven cavity QED $Λ$-system. We show that with a large excited-state detuning, the photon indistinguishability can be drastically improved provided that the fluctuation rate of the noise source affecting the excited state is fast compared with the p…
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We provide a theoretical framework to study the effect of dephasing on the quantum indistinguishability of single photons emitted from a coherently driven cavity QED $Λ$-system. We show that with a large excited-state detuning, the photon indistinguishability can be drastically improved provided that the fluctuation rate of the noise source affecting the excited state is fast compared with the photon emission rate. In some cases a spectral filter is required to realize this improvement, but the cost in efficiency can be made small.
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Submitted 9 December, 2009; v1 submitted 14 July, 2009;
originally announced July 2009.
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Hybrid photonic crystal cavity and waveguide for coupling to diamond NV-centers
Authors:
Paul E. Barclay,
Kai-Mei Fu,
Charles Santori,
Raymond G. Beausoleil
Abstract:
A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index membrane, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity s…
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A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index membrane, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity supports a mode with quality factor Q > 1.5 million and mode volume V < 0.52 (λ/n_\text{GaP})^3, and promises to allow Purcell enhanced collection of spontaneous emission from an NV located more than 50 nm below the diamond surface. The nanowire photonic crystal waveguide can be used to efficiently couple light into and out of the cavity, or as an efficient broadband collector of NV phonon sideband emission. The proposed structures can be fabricated using existing materials and processing techniques.
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Submitted 22 May, 2009; v1 submitted 2 April, 2009;
originally announced April 2009.
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High nitrogen-vacancy density diamonds for magnetometry applications
Authors:
V. M. Acosta,
E. Bauch,
M. P. Ledbetter,
C. Santori,
K. -M. C. Fu,
P. E. Barclay,
R. G. Beausoleil,
H. Linget,
J. F. Roch,
F. Treussart,
S. Chemerisov,
W. Gawlik,
D. Budker
Abstract:
Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2…
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Nitrogen-vacancy (NV) centers in millimeter-scale diamond samples were produced by irradiation and subsequent annealing under varied conditions. The optical and spin relaxation properties of these samples were characterized using confocal microscopy, visible and infrared absorption, and optically detected magnetic resonance. The sample with the highest NV- concentration, approximately 16 ppm = 2.8 x 10^{18} cm^{-3}, was prepared with no observable traces of neutrally-charged vacancy defects. The effective transverse spin relaxation time for this sample was T2* = 118(48) ns, predominately limited by residual paramagnetic nitrogen which was determined to have a concentration of 52(7) ppm. Under ideal conditions, the shot-noise limited sensitivity is projected to be ~150 fT/\sqrt{Hz} for a 100 micron-scale magnetometer based on this sample. Other samples with NV- concentrations from .007 to 12 ppm and effective relaxation times ranging from 27 to 291 ns were prepared and characterized.
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Submitted 31 July, 2009; v1 submitted 19 March, 2009;
originally announced March 2009.
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Coherent interference effects in a nano-assembled optical cavity-QED system
Authors:
Paul E. Barclay,
Charles Santori,
Kai-Mei Fu,
Raymond G. Beausoleil,
Oskar Painter
Abstract:
Diamond nanocrystals containing NV color centers are positioned with 100-nanometer-scale accuracy in the near-field of a high-Q SiO2 microdisk cavity using a fiber taper. The cavity modified nanocrystal photoluminescence is studied, with Fano-like quantum interference features observed in the far-field emission spectrum. A quantum optical model of the system is proposed, from which the NV- zero…
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Diamond nanocrystals containing NV color centers are positioned with 100-nanometer-scale accuracy in the near-field of a high-Q SiO2 microdisk cavity using a fiber taper. The cavity modified nanocrystal photoluminescence is studied, with Fano-like quantum interference features observed in the far-field emission spectrum. A quantum optical model of the system is proposed, from which the NV- zero phonon line coherent coupling rate to the microdisk is estimated to be 28 MHz for a nearly optimally placed nanocrystal.
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Submitted 24 December, 2008; v1 submitted 24 December, 2008;
originally announced December 2008.
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Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing
Authors:
Charles Santori,
Paul E. Barclay,
Kai-Mei C. Fu,
Raymond G. Beausoleil
Abstract:
Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion…
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Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.
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Submitted 8 February, 2009; v1 submitted 19 December, 2008;
originally announced December 2008.
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Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide
Authors:
K. -M. C. Fu,
C. Santori,
P. E. Barclay,
I. Aharonovich,
S. Prawer,
N. Meyer,
A. M. Holm,
R. G. Beausoleil
Abstract:
The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.
The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.
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Submitted 3 November, 2008;
originally announced November 2008.
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Ultrafast control of donor-bound electron spins with single detuned optical pulses
Authors:
Kai-Mei C. Fu,
Susan M. Clark,
Charles Santori,
M. C. Holland,
Colin R. Stanley,
Yoshihisa Yamamoto
Abstract:
The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) technique…
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The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) techniques based on microwave sources, can be attained with broadband optical pulses. One promising ultrafast technique utilizes single broadband pulses detuned from resonance in a three-level Lambda system [4]. This attractive technique is robust against optical pulse imperfections and does not require a fixed optical reference phase. Here we demonstrate the principle of coherent manipulation of spins theoretically and experimentally. Using this technique, donor-bound electron spin rotations with single-pulse areas exceeding pi/4 and two-pulses areas exceeding pi/2 are demonstrated. We believe the maximum pulse areas attained do not reflect a fundamental limit of the technique and larger pulse areas could be achieved in other material systems. This technique has applications from basic solid-state ESR spectroscopy to arbitrary single-qubit rotations [4, 5] and bang-bang control[6] for quantum computation.
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Submitted 25 June, 2008;
originally announced June 2008.
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Polarization-selective excitation of N-V centers in diamond
Authors:
T. P. Mayer Alegre,
C. Santori,
G. Medeiros-Ribeiro,
R. G. Beausoleil
Abstract:
The nitrogen-vacancy (N-V) center in diamond is promising as an electron spin qubit due to its long-lived coherence and optical addressability. The ground state is a spin triplet with two levels ($m_s = \pm 1$) degenerate at zero magnetic field. Polarization-selective microwave excitation is an attractive method to address the spin transitions independently, since this allows operation down to z…
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The nitrogen-vacancy (N-V) center in diamond is promising as an electron spin qubit due to its long-lived coherence and optical addressability. The ground state is a spin triplet with two levels ($m_s = \pm 1$) degenerate at zero magnetic field. Polarization-selective microwave excitation is an attractive method to address the spin transitions independently, since this allows operation down to zero magnetic field. Using a resonator designed to produce circularly polarized microwaves, we have investigated the polarization selection rules of the N-V center. We first apply this technique to N-V ensembles in [100] and [111]-oriented samples. Next, we demonstrate an imaging technique, based on optical polarization dependence, that allows rapid identification of the orientations of many single N-V centers. Finally, we test the microwave polarization selection rules of individual N-V centers of known orientation.
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Submitted 17 May, 2007; v1 submitted 14 May, 2007;
originally announced May 2007.
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Secure self-calibrating quantum random bit generator
Authors:
M. Fiorentino,
C. M. Santori,
S. M. Spillane,
W. J. Munro,
R. G. Beausoleil
Abstract:
Random bit generators (RBGs) are key components of a variety of information processing applications ranging from simulations to cryptography. In particular, cryptographic systems require "strong" RBGs that produce high-entropy bit sequences, but traditional software pseudo-RBGs have very low entropy content and therefore are relatively weak for cryptography. Hardware RBGs yield entropy from chao…
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Random bit generators (RBGs) are key components of a variety of information processing applications ranging from simulations to cryptography. In particular, cryptographic systems require "strong" RBGs that produce high-entropy bit sequences, but traditional software pseudo-RBGs have very low entropy content and therefore are relatively weak for cryptography. Hardware RBGs yield entropy from chaotic or quantum physical systems and therefore are expected to exhibit high entropy, but in current implementations their exact entropy content is unknown. Here we report a quantum random bit generator (QRBG) that harvests entropy by measuring single-photon and entangled two-photon polarization states. We introduce and implement a quantum tomographic method to measure a lower bound on the "min-entropy" of the system, and we employ this value to distill a truly random bit sequence. This approach is secure: even if an attacker takes control of the source of optical states, a secure random sequence can be distilled.
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Submitted 30 March, 2007; v1 submitted 13 December, 2006;
originally announced December 2006.
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Millisecond spin-flip times of donor-bound electrons in GaAs
Authors:
Kai-Mei C. Fu,
Wenzheng Yeo,
Susan Clark,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and me…
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We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.
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Submitted 18 October, 2006;
originally announced October 2006.
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The excited state structure of the nitrogen-vacancy center in diamond
Authors:
Ph. Tamarat,
N. B. Manson,
R. L. McMurtie,
N. Nitsovtsev,
C. Santori,
P. Neumann,
T. Gaebel,
F. Jelezko,
P. Hemmer,
J. Wrachtrup
Abstract:
Optical and microwave double resonance techniques are used to obtain the excited state structure of single nitrogen-vacancy centers in diamond. The excited state is an orbital doublet and it is shown that it can be split and associated transition strengths varied by external electric fields and by strain. A group theoretical model is developed. It gives a good account of the observations and con…
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Optical and microwave double resonance techniques are used to obtain the excited state structure of single nitrogen-vacancy centers in diamond. The excited state is an orbital doublet and it is shown that it can be split and associated transition strengths varied by external electric fields and by strain. A group theoretical model is developed. It gives a good account of the observations and contributes to an improved understanding of the electronic structure of the center. The findings are important for quantum information processing and other applications of the center.
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Submitted 13 October, 2006;
originally announced October 2006.
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Coherent Population Trap** of Single Spins in Diamond Under Optical Excitation
Authors:
Charles Santori,
Philippe Tamarat,
Philipp Neumann,
Jorg Wrachtrup,
David Fattal,
Raymond G. Beausoleil,
James Rabeau,
Paolo Olivero,
Andrew Greentree,
Steven Prawer,
Fedor Jelezko,
Philip Hemmer
Abstract:
Coherent population trap** is demonstrated in single nitrogen-vacancy centers in diamond under optical excitation. For sufficient excitation power, the fluorescence intensity drops almost to the background level when the laser modulation frequency matches the 2.88 GHz splitting of the ground states. The results are well described theoretically by a four-level model, allowing the relative trans…
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Coherent population trap** is demonstrated in single nitrogen-vacancy centers in diamond under optical excitation. For sufficient excitation power, the fluorescence intensity drops almost to the background level when the laser modulation frequency matches the 2.88 GHz splitting of the ground states. The results are well described theoretically by a four-level model, allowing the relative transition strengths to be determined for individual centers. The results show that all-optical control of single spins is possible in diamond.
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Submitted 9 December, 2006; v1 submitted 20 July, 2006;
originally announced July 2006.
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Coherent Population Trap** in Diamond N-V Centers at Zero Magnetic Field
Authors:
Charles Santori,
David Fattal,
Sean M. Spillane,
Marco Fiorentino,
Raymond G. Beausoleil,
Andrew D. Greentree,
Paolo Olivero,
Martin Draganski,
James R. Rabeau,
Patrick Reichart,
Brant C. Gibson,
Sergey Rubanov,
David N. Jamieson,
Steven Prawer
Abstract:
Coherent population trap** at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and w…
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Coherent population trap** at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and was unexpected following recent experiments demonstrating optical readout of single nitrogen-vacancy electron spins based on cycling transitions. These results demonstrate for the first time that three-level Lambda configurations suitable for proposed quantum information applications can be realized simultaneously for all four orientations of nitrogen-vacancy centers at zero magnetic field.
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Submitted 31 May, 2006; v1 submitted 23 February, 2006;
originally announced February 2006.
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Coherent Population Trap** of Electron Spins in a Semiconductor
Authors:
Kai-Mei C. Fu,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our dat…
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In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trap** in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
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Submitted 25 June, 2007; v1 submitted 31 March, 2005;
originally announced April 2005.
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Photon correlation studies of single GaN quantum dots
Authors:
Charles Santori,
Stephan Gotzinger,
Yoshihisa Yamamoto,
Satoshi Kako,
Katsuyuki Hoshino,
Yasuhiko Arakawa
Abstract:
We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered…
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We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered single-photon source operating at a wavelength of 358 nm.
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Submitted 31 January, 2005;
originally announced February 2005.
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Sub-microsecond correlations in photoluminescence from InAs quantum dots
Authors:
Charles Santori,
David Fattal,
Jelena Vuckovic,
Glenn S. Solomon,
Edo Waks,
Yoshihisa Yamamoto
Abstract:
Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that ap…
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Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.
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Submitted 15 August, 2003;
originally announced August 2003.
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Enhanced single-photon emission from a quantum dot in a micropost microcavity
Authors:
Jelena Vuckovic,
David Fattal,
Charles Santori,
Glenn Solomon,
Yoshihisa Yamamoto
Abstract:
We demonstrate a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multi-photon probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate is increased by a factor of five, while the probability to emit two or more photons in the same pulse is reduced to 2% compared to a Poisson-distri…
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We demonstrate a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multi-photon probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate is increased by a factor of five, while the probability to emit two or more photons in the same pulse is reduced to 2% compared to a Poisson-distributed source of the same intensity. In addition to the small multi-photon probability, such a strong Purcell effect is important in a single-photon source for improving the photon outcoupling efficiency and the single-photon generation rate, and for bringing the emitted photon pulses closer to the Fourier transform limit.
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Submitted 3 July, 2003;
originally announced July 2003.
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Entanglement formation and violation of Bell's inequality with a semiconductor single photon source
Authors:
David Fattal,
Kyo Inoue,
Jelena Vuckovic,
Charles Santori,
Glenn S. Solomon,
Yoshihisa Yamamoto
Abstract:
We report the generation of polarization-entangled photons, using a quantum dot single photon source, linear optics and photodetectors. Two photons created independently are observed to violate Bell's inequality. The density matrix describing the polarization state of the postselected photon pairs is also reconstructed, and agrees well with a simple model predicting the quality of entanglement f…
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We report the generation of polarization-entangled photons, using a quantum dot single photon source, linear optics and photodetectors. Two photons created independently are observed to violate Bell's inequality. The density matrix describing the polarization state of the postselected photon pairs is also reconstructed, and agrees well with a simple model predicting the quality of entanglement from the known parameters of the single photon source. Our scheme provides a method to generate no more than one entangled photon pair per cycle, a feature useful to enhance quantum cryptography protocols using entangled photons.
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Submitted 8 May, 2003;
originally announced May 2003.
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Optical Detection of a Single Nuclear Spin
Authors:
K-M. C. Fu,
T. D. Ladd,
C. Santori,
Y. Yamamoto
Abstract:
We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination measurement of the 31-P bound exciton photoluminescence using single photon detectors. The measurement time is expected to be shorter than the lifetime of the nucl…
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We propose a method to optically detect the spin state of a 31-P nucleus embedded in a 28-Si matrix. The nuclear-electron hyperfine splitting of the 31-P neutral-donor ground state can be resolved via a direct frequency discrimination measurement of the 31-P bound exciton photoluminescence using single photon detectors. The measurement time is expected to be shorter than the lifetime of the nuclear spin at 4 K and 10 T.
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Submitted 14 February, 2003;
originally announced February 2003.
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An Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity
Authors:
Matthew Pelton,
Charles Santori,
Jelena Vuckovic,
Bingyang Zhang,
Glenn S. Solomon,
Jocelyn Plant,
Yoshihisa Yamamoto
Abstract:
We have demonstrated efficient production of triggered single photons by coupling a single semiconductor quantum dot to a three-dimensionally confined optical mode in a micropost microcavity. The efficiency of emitting single photons into a single-mode travelling wave is approximately 38%, which is nearly two orders of magnitude higher than for a quantum dot in bulk semiconductor material. At th…
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We have demonstrated efficient production of triggered single photons by coupling a single semiconductor quantum dot to a three-dimensionally confined optical mode in a micropost microcavity. The efficiency of emitting single photons into a single-mode travelling wave is approximately 38%, which is nearly two orders of magnitude higher than for a quantum dot in bulk semiconductor material. At the same time, the probability of having more than one photon in a given pulse is reduced by a factor of seven as compared to light with Poissonian photon statistics.
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Submitted 8 August, 2002;
originally announced August 2002.
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Polarization-Correlated Photon Pairs from a Single Quantum Dot
Authors:
Charles Santori,
David Fattal,
Matthew Pelton,
Glenn S. Solomon,
Yoshihisa Yamamoto
Abstract:
Polarization correlation in a linear basis, but not entanglement, is observed between the biexciton and single-exciton photons emitted by a single InAs quantum dot in a two-photon cascade. The results are well described quantitatively by a probabilistic model that includes two decay paths for a biexciton through a non-degenerate pair of one-exciton states, with the polarization of the emitted ph…
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Polarization correlation in a linear basis, but not entanglement, is observed between the biexciton and single-exciton photons emitted by a single InAs quantum dot in a two-photon cascade. The results are well described quantitatively by a probabilistic model that includes two decay paths for a biexciton through a non-degenerate pair of one-exciton states, with the polarization of the emitted photons depending on the decay path. The results show that spin non-degeneracy due to quantum-dot asymmetry is a significant obstacle to the realization of an entangled-photon generation device.
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Submitted 24 July, 2002; v1 submitted 13 November, 2001;
originally announced November 2001.
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Time-resolved spectroscopy of multi-excitonic decay in an InAs quantum dot
Authors:
Charles Santori,
Glenn S. Solomon,
Matthew Pelton,
Yoshihisa Yamamoto
Abstract:
The multi-excitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of pump powers by a simple model. The measured biexcitonic decay rate is about 1.5 times the single-exciton decay rate. This ratio suggests the presence of selecti…
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The multi-excitonic decay process in a single InAs quantum dot is studied through high-resolution time-resolved spectroscopy. A cascaded emission sequence involving three spectral lines is seen that is described well over a wide range of pump powers by a simple model. The measured biexcitonic decay rate is about 1.5 times the single-exciton decay rate. This ratio suggests the presence of selection rules, as well as a significant effect of the Coulomb interaction on the biexcitonic wavefunction.
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Submitted 22 November, 2001; v1 submitted 28 August, 2001;
originally announced August 2001.
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Electrostatic force spectroscopy of a single InAs quantum dot
Authors:
Aykutlu Dâna,
Charles Santori,
Yoshihisa Yamamoto
Abstract:
Electrostatic force microscopy at cryogenic temperatures was used to probe the electrostatic interaction between a conductive atomic force microscopy tip and electronic charges trapped in an InAs quantum dot. Measurement of the self-oscillation frequency shift of the cantilever as a function of tip-sample bias voltage revealed discrete jumps at certain voltages when the tip was positioned above…
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Electrostatic force microscopy at cryogenic temperatures was used to probe the electrostatic interaction between a conductive atomic force microscopy tip and electronic charges trapped in an InAs quantum dot. Measurement of the self-oscillation frequency shift of the cantilever as a function of tip-sample bias voltage revealed discrete jumps at certain voltages when the tip was positioned above a quantum dot. These jumps are attributed to single-electron filling of the electronic states of the quantum dot. The estimated resonant energies of two s-states and four p-states are compared with the experimental data obtained for an ensemble of quantum dots by the capacitance measurement technique.
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Submitted 6 March, 2001; v1 submitted 6 March, 2001;
originally announced March 2001.
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Triggered single photons from a quantum dot
Authors:
Charles Santori,
Matthew Pelton,
Glenn Solomon,
Yseulte Dale,
Yoshihisa Yamamoto
Abstract:
We demonstrate a new method for generating triggered single photons. After a laser pulse generates excitons inside of a single quantum dot, electrostatic interactions between them and the resulting spectral shifts allow a single emitted photon to be isolated. Autocorrelation measurements show a reduction of the two-photon probability to 0.12 times the value for Poisson light. Strong anti-bunchin…
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We demonstrate a new method for generating triggered single photons. After a laser pulse generates excitons inside of a single quantum dot, electrostatic interactions between them and the resulting spectral shifts allow a single emitted photon to be isolated. Autocorrelation measurements show a reduction of the two-photon probability to 0.12 times the value for Poisson light. Strong anti-bunching persists when the emission is saturated. The emitted photons are also polarized.
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Submitted 20 December, 2000;
originally announced December 2000.