Intra-Domain Periodic Defects in Monolayer MoS$_2$
Authors:
Anupam Roy,
Rudresh Ghosh,
Amritesh Rai,
Atresh Sanne,
Kyounghwan Kim,
Hema C. P. Movva,
Rik Dey,
Tanmoy Pramanik,
Sayema Chowdhury,
Emanuel Tutuc,
Sanjay K. Banerjee
Abstract:
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm…
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We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.
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Submitted 8 May, 2017;
originally announced May 2017.
