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Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Authors:
Gianluca Aglieri Rinella,
Giacomo Alocco,
Matias Antonelli,
Roberto Baccomi,
Stefania Maria Beole,
Mihail Bogdan Blidaru,
Bent Benedikt Buttwill,
Eric Buschmann,
Paolo Camerini,
Francesca Carnesecchi,
Marielle Chartier,
Yongjun Choi,
Manuel Colocci,
Giacomo Contin,
Dominik Dannheim,
Daniele De Gruttola,
Manuel Del Rio Viera,
Andrea Dubla,
Antonello di Mauro,
Maurice Calvin Donner,
Gregor Hieronymus Eberwein,
Jan Egger,
Laura Fabbietti,
Finn Feindt,
Kunal Gautam
, et al. (69 additional authors not shown)
Abstract:
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25…
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Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
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Submitted 13 March, 2024;
originally announced March 2024.
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Digital Pixel Test Structures implemented in a 65 nm CMOS process
Authors:
Gianluca Aglieri Rinella,
Anton Andronic,
Matias Antonelli,
Mauro Aresti,
Roberto Baccomi,
Pascal Becht,
Stefania Beole,
Justus Braach,
Matthew Daniel Buckland,
Eric Buschmann,
Paolo Camerini,
Francesca Carnesecchi,
Leonardo Cecconi,
Edoardo Charbon,
Giacomo Contin,
Dominik Dannheim,
Joao de Melo,
Wen**g Deng,
Antonello di Mauro,
Jan Hasenbichler,
Hartmut Hillemanns,
Geun Hee Hong,
Artem Isakov,
Antoine Junique,
Alex Kluge
, et al. (27 additional authors not shown)
Abstract:
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the…
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The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20 to 40 um and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article.
The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at +20 C and a detection efficiency of 99% for a DPTS irradiated with a dose of $10^{15}$ 1 MeV n$_{\mathrm{eq}}/$cm$^2$. Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels.
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Submitted 10 July, 2023; v1 submitted 16 December, 2022;
originally announced December 2022.
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The MAPS foil
Authors:
S. Beolé,
F. Carnesecchi,
G. Contin,
R. de Oliveira,
A. di Mauro,
S. Ferry,
H. Hillemanns,
A. Junique,
A. Kluge,
L. Lautner,
M. Mager,
B. Mehl,
K. Rebane,
F. Reidt,
I. Sanna,
M. Šuljić,
A. Yüncü
Abstract:
We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a flexible, light, protected, and fully integrated detector module. By using widely available printed circuit board manufacturing techniques, the production of these dev…
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We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a flexible, light, protected, and fully integrated detector module. By using widely available printed circuit board manufacturing techniques, the production of these devices can be scaled easily in size and volume, making it a compelling candidate for future large-scale applications.
A first series of prototypes that embed the ALPIDE chip has been produced, functionally tested, and shown to be working.
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Submitted 19 October, 2022; v1 submitted 25 May, 2022;
originally announced May 2022.
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Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
Authors:
L. Paolozzi,
R. Cardarelli,
S. Débieux,
Y. Favre,
D. Ferrère,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kaynak,
F. Martinelli,
M. Nessi,
H. Rücker,
I. Sanna,
DMS Sultan,
P. Valerio,
E. Zaffaroni
Abstract:
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consump…
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SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrmμ $A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance.
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Submitted 28 August, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
