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Design and simulation of a transmon qubit chip for Axion detection
Authors:
Roberto Moretti,
Hervè Atsè Corti,
Danilo Labranca,
Felix Ahrens,
Guerino Avallone,
Danilo Babusci,
Leonardo Banchi,
Carlo Barone,
Matteo Mario Beretta,
Matteo Borghesi,
Bruno Buonomo,
Enrico Calore,
Giovanni Carapella,
Fabio Chiarello,
Alessandro Cian,
Alessando Cidronali,
Filippo Costa,
Alessandro Cuccoli,
Alessandro D'Elia,
Daniele Di Gioacchino,
Stefano Di Pascoli,
Paolo Falferi,
Marco Fanciulli,
Marco Faverzani,
Giulietto Felici
, et al. (32 additional authors not shown)
Abstract:
Quantum Sensing is a rapidly expanding research field that finds one of its applications in Fundamental Physics, as the search for Dark Matter. Devices based on superconducting qubits have already been successfully applied in detecting few-GHz single photons via Quantum Non-Demolition measurement (QND). This technique allows us to perform repeatable measurements, bringing remarkable sensitivity im…
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Quantum Sensing is a rapidly expanding research field that finds one of its applications in Fundamental Physics, as the search for Dark Matter. Devices based on superconducting qubits have already been successfully applied in detecting few-GHz single photons via Quantum Non-Demolition measurement (QND). This technique allows us to perform repeatable measurements, bringing remarkable sensitivity improvements and dark count rate suppression in experiments based on high-precision microwave photon detection, such as for Axions and Dark Photons search. In this context, the INFN Qub-IT project goal is to realize an itinerant single-photon counter based on superconducting qubits that will exploit QND for enhancing Axion search experiments. In this study, we present Qub-IT's status towards the realization of its first superconducting qubit device, illustrating design and simulation procedures and the characterization of fabricated Coplanar Waveguide Resonators (CPWs) for readout. We match target qubit parameters and assess a few-percent level agreement between lumped and distributed element simulation models. We reach a maximum internal quality factor of 9.2x10^5 for -92 dBm on-chip readout power.
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Submitted 25 January, 2024; v1 submitted 8 October, 2023;
originally announced October 2023.
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Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
Authors:
Andrea Barbiero,
Artur Tuktamyshev,
Geoffrey Pirard,
Jan Huwer,
Tina Müller,
R. Mark Stevenson,
Sergio Bietti,
Stefano Vichi,
Alexey Fedorov,
Gabriel Bester,
Stefano Sanguinetti,
Andrew J. Shields
Abstract:
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state quantum emitters with naturally low fine structure splitting, such as highly symmetric InAs quantum dots (QDs) grown on (111)-oriented surfaces. Incorporating this k…
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The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state quantum emitters with naturally low fine structure splitting, such as highly symmetric InAs quantum dots (QDs) grown on (111)-oriented surfaces. Incorporating this kind of QDs into optical cavities is critical to achieve sufficient signal intensitiesfor applications, but has so far shown major complications. In this work we present droplet epitaxy of telecom-wavelength InAs QDs within an optical cavity on a vicinal (2° miscut) GaAs(111)A substrate. We show a remarkable enhancement of the photon extraction efficiency compared to previous reports together with a reduction of the density that facilitates the isolation of single spectral lines. Moreover, we characterise the exciton fine structure splitting and employ numerical simulations under the framework of the empirical pseudopotential and configuration interaction methods to study the impact of the miscut on the optical properties of the QDs. We demonstrate that the presence of miscut steps influences the polarisation of the excitonic states and introduces a preferential orientation in the $C_{3v}$ symmetry of the surface.
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Submitted 30 September, 2022; v1 submitted 23 February, 2022;
originally announced February 2022.
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Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
Authors:
Massimo Gurioli,
Zhiming Wang,
Armando Rastelli,
Takashi Kuroda,
Stefano Sanguinetti
Abstract:
The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots are very at…
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The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor quantum dots (QDs), or artificial atoms, namely the Stranski-Krastanov (SK) and the droplet epitaxy (DE) method. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, the local-droplet-etching (LDE), as complementary routes to obtain high quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometime even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the obtained achievements and the still open challenges, in view of applications in quantum communication and technology.
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Submitted 28 March, 2021;
originally announced March 2021.
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Optically controlled dual-band quantum dot infrared photodetector
Authors:
Stefano Vichi,
Sergio Bietti,
Francesco Basso Basset,
Artur Tuktamyshev,
Alexey Fedorov,
Stefano Sanguinetti
Abstract:
We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal size distribution, whose absorption spectrum can be controlled by optically-injected carriers. An external pum** laser varies the electron density in…
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We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal size distribution, whose absorption spectrum can be controlled by optically-injected carriers. An external pum** laser varies the electron density in the QDs, permitting to control the available electronic transitions and thus the absorption spectrum. We grew a test sample which we studied by AFM and photoluminescence. Based on the experimental data, we simulated the infrared absorption spectrum of the sample, which showed two absorption bands at 5.85 um and 8.98 um depending on the excitation power.
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Submitted 5 March, 2021;
originally announced March 2021.
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
Authors:
A. Tuktamyshev,
A. Fedorov,
S. Bietti,
S. Vichi,
K. D. Zeuner,
K. D. Jöns,
D. Chrastina,
S. Tsukamoto,
V. Zwiller,
M. Gurioli,
S. Sanguinetti
Abstract:
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully rel…
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We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 μm telecom O-band with the fine structure splitting as low as 16 μeV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
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Submitted 1 April, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
Authors:
Artur Tuktamyshev,
Alexey Fedorov,
Sergio Bietti,
Shiro Tsukamoto,
Roberto Bergamaschini,
Francesco Montalenti,
Stefano Sanguinetti
Abstract:
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeab…
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We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.
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Submitted 24 July, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields
Authors:
T. Auzelle,
M. Azadmand,
T. Flissikowski,
M. Ramsteiner,
K. Morgenroth,
C. Stemmler,
S. Fernández-Garrido,
S. Sanguinetti,
H. T. Grahn,
L. Geelhaar,
O. Brandt
Abstract:
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a…
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GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.
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Submitted 4 February, 2021; v1 submitted 17 January, 2020;
originally announced January 2020.
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Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Authors:
Mani Azadmand,
Tomas Auzelle,
Jonas Lähnemann,
Guanhui Gao,
Lars Nicolai,
Manfred Ramsteiner,
Achim Trampert,
Stefano Sanguinetti,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the subst…
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We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.
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Submitted 16 October, 2019;
originally announced October 2019.
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High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
Authors:
Sergio Bietti,
Francesco Basso Basset,
Artur Tuktamyshev,
Emiliano Bonera,
Alexey Fedorov,
Stefano Sanguinetti
Abstract:
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and enta…
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We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modelled.
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Submitted 7 August, 2019;
originally announced August 2019.
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Metal Droplet Effects on the Composition of Ternary Nitrides
Authors:
Mani Azadmand,
Stefano Vichi,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that consi…
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We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that considers droplet effects on the incorporation of In and Ga adatoms into the crystal by taking into account the combined effects of the higher mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that takes place under the droplet by direct im**ement of nitrogen. The proposed model is general and can be extended to describe the incorporation of adatoms during the growth of the material class of ternary compounds when droplets are present on the surface.
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Submitted 16 July, 2019;
originally announced July 2019.
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Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
Authors:
Francesco Basso Basset,
Sergio Bietti,
Artur Tuktamyshev,
Stefano Vichi,
Emiliano Bonera,
Stefano Sanguinetti
Abstract:
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the prelimi…
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The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the preliminary formation of the Ga droplets. This results in an ensemble photoluminescence linewidth of 19 meV at 14 K. The narrow emission band and the absence of a wetting layer promoting dot-dot coupling allow us to deconvolve the contribution of phonon broadening in the ensemble photoluminescence and study it in a wide temperature range.
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Submitted 24 March, 2019;
originally announced March 2019.
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Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Authors:
Mani Azadmand,
Luca Barabani,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the m…
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We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the metal dose exceeds the critical amount required for the nucleation of droplets. We explain this phenomenon via a model that takes into account droplet effects on the incorporation of metal adatoms into the crystal. A relevant role is played by the vapor-liquid-solid growth mode that takes place under the droplets due to nitrogen molecules directly im**ing on the droplets.
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Submitted 1 December, 2017; v1 submitted 29 November, 2017;
originally announced November 2017.
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High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
Authors:
Francesco Basso Basset,
Sergio Bietti,
Marcus Reindl,
Luca Esposito,
Alexey Fedorov,
Daniel Huber,
Armando Rastelli,
Emiliano Bonera,
Rinaldo Trotta,
Stefano Sanguinetti
Abstract:
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching…
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Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching the energy of the entangled photons to atomic transitions (a promising route towards quantum networking) remains an outstanding challenge.
Here, we overcome these obstacles by introducing a modified approach to droplet epitaxy on a high symmetry (111)A substrate, where the fundamental crystallization step is performed at a significantly higher temperature as compared to previous reports. Our method drastically improves the yield of entanglement-ready photon sources near the emission wavelength of interest, which can be as high as 95% due to the low values of fine structure splitting and radiative lifetime, together with the reduced exciton dephasing offered by the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in the operating spectral region of Rb-based slow-light media, providing a viable technology for quantum repeater stations.
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Submitted 10 October, 2018; v1 submitted 10 October, 2017;
originally announced October 2017.
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Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces
Authors:
Luca Esposito,
Sergio Bietti,
Alexey Fedorov,
Richard Noetzel,
Stefano Sanguinetti
Abstract:
We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientation…
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We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards atomically flat surface. GaAs/AlGaAs quantum wells realized on optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.
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Submitted 6 April, 2017;
originally announced April 2017.
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Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Authors:
Nicola Dotti,
Francesco Sarti,
Sergio Bietti,
Alexander Azarov,
Andrej Kuznetsov,
Francesco Biccari,
Anna Vinattieri,
Stefano Sanguinetti,
Marco Abbarchi,
Massimo Gurioli
Abstract:
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum e…
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We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X+ from positive to negative values (from ~+5 meV up to ~-7 meV covering about ~ 70 meV of the emission energy) with increasing quantum confinement. These light emitters exhibiting energy-degenerate X and XX energy levels at ~1.855 eV (680 nm) are a promising resource for the generation of entangled photons in the time-reordering scheme on a silicon platform.
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Submitted 23 March, 2015; v1 submitted 15 December, 2014;
originally announced December 2014.
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A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory
Authors:
Kristofer Reyes,
Peter Smereka,
Denis Nothern,
Joanna Mirecki Millunchick,
Sergio Bietti,
Claudio Somaschini,
Stefano Sanguinetti,
Cesare Frigeri
Abstract:
We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ab…
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We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.
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Submitted 28 March, 2013; v1 submitted 2 November, 2012;
originally announced November 2012.
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Measurement of diffusion coefficients of francium and rubidium in yttrium based on laser spectroscopy
Authors:
C. de Mauro,
R. Calabrese,
L. Corradi,
A. Dainelli,
A. Khanbekyan,
E. Mariotti,
P. Minguzzi,
L. Moi,
S. Sanguinetti,
G. Stancari,
L. Tomassetti,
S. Veronesi
Abstract:
We report the first measurement of the diffusion coefficients of francium and rubidium ions implanted in a yttrium foil. We developed a methodology, based on laser spectroscopy, which can be applied to radioactive and stable species, and allows us to directly take record of the diffusion time. Francium isotopes are produced via fusion-evaporation nuclear reaction of a 100 MeV 18-O beam on a Au t…
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We report the first measurement of the diffusion coefficients of francium and rubidium ions implanted in a yttrium foil. We developed a methodology, based on laser spectroscopy, which can be applied to radioactive and stable species, and allows us to directly take record of the diffusion time. Francium isotopes are produced via fusion-evaporation nuclear reaction of a 100 MeV 18-O beam on a Au target at the Tandem XTU accelerator facility in Legnaro, Italy. Francium is ionized at the gold-vacuum interface and Fr+ ions are then transported with a 3 keV electrostatic beamline to a cell for neutralization and capture in a magneto-optical trap (MOT). A Rb+ beam is also available, which follows the same path as Fr+ ions. The accelerated ions are focused and implanted in a 25 um thick yttrium foil for neutralization: after diffusion to the surface, they are released as neutrals, since the Y work function is lower than the alkali ionization energies. The time evolution of the MOT and the vapor fluorescence signals are used to determine diffusion times of Fr and Rb in Y as a function of temperature.
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Submitted 1 August, 2008;
originally announced August 2008.
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High-Precision Measurement of the Laser-Trap** Frequencies for $^{209,210,211}$Fr Atoms
Authors:
S. Sanguinetti,
R. Calabrese,
L. Corradi,
A. Dainelli,
A. Khanbekyan,
E. Mariotti,
C. de Mauro,
P. Minguzzi,
L. Moi,
G. Stancari,
L. Tomassetti,
S. Veronesi
Abstract:
We present the accurate measurement of the frequency of the $7S-7P$ laser-trap** transition for three francium isotopes. Our approach is based on an interferometric comparison to deduce the unknown laser frequency from a secondary laser frequency-standard. After careful investigation of systematics, with samples of about 100 atoms the final accuracy reaches 8 MHz, an order of magnitude better…
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We present the accurate measurement of the frequency of the $7S-7P$ laser-trap** transition for three francium isotopes. Our approach is based on an interferometric comparison to deduce the unknown laser frequency from a secondary laser frequency-standard. After careful investigation of systematics, with samples of about 100 atoms the final accuracy reaches 8 MHz, an order of magnitude better than the best previous measurement for $^{210}$Fr, and opens the way to improved tests of the theoretical computation of Fr atomic structure.
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Submitted 28 July, 2008;
originally announced July 2008.
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Optical transitions in quantum ring complexes
Authors:
T. Kuroda,
T. Mano,
T. Ochiai,
S. Sanguinetti,
K. Sakoda,
G. Kido,
N. Koguchi
Abstract:
Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and…
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Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and studied: a single-wall ring and a concentric double-ring. For both samples, highly efficient photoluminescence emitted from a single quantum structure is detected. The spectra show discrete resonance lines, which reflect the quantized nature of the ring-type electronic states. In the concentric double--ring, the carrier confinement in the inner ring and that in the outer ring are identified distinctly as split lines. The observed spectra are interpreted on the basis of single electron effective mass calculations.
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Submitted 24 September, 2005;
originally announced September 2005.
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Prospects for Forbidden-Transition Spectroscopy and Parity Violation Measurements using a Beam of Cold Stable or Radioactive Atoms
Authors:
S. Sanguinetti,
J. Guéna,
M. Lintz,
Ph. Jacquier,
A. Wasan,
M-A. Bouchiat
Abstract:
Laser cooling and trap** offers the possibility of confining a sample of radioactive atoms in free space. Here, we address the question of how best to take advantage of cold atom properties to perform the observation of as highly forbidden a line as the 6S-7S Cs transition for achieving, in the longer term, Atomic Parity Violation measurements in radioactive alkali isotopes. Another point at i…
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Laser cooling and trap** offers the possibility of confining a sample of radioactive atoms in free space. Here, we address the question of how best to take advantage of cold atom properties to perform the observation of as highly forbidden a line as the 6S-7S Cs transition for achieving, in the longer term, Atomic Parity Violation measurements in radioactive alkali isotopes. Another point at issue is whether one might do better with stable, cold atoms than with thermal atoms. To compensate for the large drawback of the small number of atoms available in a trap, one must take advantage of their low velocity. To lengthen the time of interaction with the excitation laser, we suggest choosing a geometry where the laser beam exciting the transition is colinear to a slow, cold atomic beam, either extracted from a trap or prepared by Zeeman slowing. We also suggest a new observable physical quantity manifesting APV, which presents several advantages:specificity, efficiency of detection, possibility of direct calibration by a parity conserving quantity of a similar nature. It is well adapted to a configuration where the cold atomic beam passes through two regions of transverse, crossed electric fields, leading both to differential measurements and to strong reduction of the contributions from the M_1-Stark interference signals, potential sources of systematics in APV measurements. Our evaluation of signal to noise ratios shows that with available techniques, measurements of transition amplitudes, important as required tests of Atomic Theory should be possible in cesium 133 with a statistical precision of 1/1000 and probably also in Fr isotopes for production rates of 10^6 Fr atoms/s.
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Submitted 2 March, 2003;
originally announced March 2003.
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A new Manifestation of Atomic Parity Violation in Cesium: a Chiral Optical Gain induced by linearly polarized 6S-7S Excitation
Authors:
J. Guéna,
D. Chauvat,
Ph. Jacquier,
E. Jahier,
M. Lintz,
A. V. Papoyan,
S. Sanguinetti,
D. Sarkisyan,
A. Wasan,
M. A. Bouchiat
Abstract:
We have detected, by using stimulated emission, an Atomic Parity Violation (APV) in the form of a chiral optical gain of a cesium vapor on the 7S - 6P$_{3/2}$ transition,consecutive to linearly polarized 6S-7S excitation. We demonstrate the validity of this detection method of APV, by presenting a 9% accurate measurement of expected sign and magnitude. We underline several advantages of this ent…
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We have detected, by using stimulated emission, an Atomic Parity Violation (APV) in the form of a chiral optical gain of a cesium vapor on the 7S - 6P$_{3/2}$ transition,consecutive to linearly polarized 6S-7S excitation. We demonstrate the validity of this detection method of APV, by presenting a 9% accurate measurement of expected sign and magnitude. We underline several advantages of this entirely new approach in which the cylindrical symmetry of the set-up can be fully exploited. Future measurements at the percent level will provide an important cross-check of an existing more precise result obtained by a different method.
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Submitted 17 October, 2002;
originally announced October 2002.
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Picosecond Nonlinear Relaxation of Photoinjected Carriers in a Single GaAs/AlGaAs Quantum Dot
Authors:
T. Kuroda,
S. Sanguinetti,
M. Gurioli,
K. Watanabe,
F. Minami,
N. Koguchi
Abstract:
Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive re…
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Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
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Submitted 2 August, 2002;
originally announced August 2002.
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Comparison of Bond Character in Hydrocarbons and Fullerenes
Authors:
D. W. Snoke,
M. Cardona,
S. Sanguinetti,
G. Benedek
Abstract:
We present a comparison of the bond polarizabilities for carbon-carbon bonds in hydrocarbons and fullerenes, using two different models for the fullerene Raman spectrum and the results of Raman measurements on ethane and ethylene. We find that the polarizabilities for single bonds in fullerenes and hydrocarbons compare well, while the double bonds in fullerenes have greater polarizability than i…
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We present a comparison of the bond polarizabilities for carbon-carbon bonds in hydrocarbons and fullerenes, using two different models for the fullerene Raman spectrum and the results of Raman measurements on ethane and ethylene. We find that the polarizabilities for single bonds in fullerenes and hydrocarbons compare well, while the double bonds in fullerenes have greater polarizability than in ethylene.
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Submitted 20 February, 1996;
originally announced February 1996.
