Amorphous silicon-doped titania films for on-chip photonics
Authors:
Thomas Kornher,
Kangwei Xia,
Roman Kolesov,
Bruno Villa,
Stefan Lasse,
Cosmin S. Sandu,
Estelle Wagner,
Scott Harada,
Giacomo Benvenuti,
Hans-Werner Becker,
Jörg Wrachtrup
Abstract:
High quality optical thin film materials form a basis for on-chip photonic micro- and nano-devices, where several photonic elements form an optical circuit. Their realization generally requires the thin film to have a higher refractive index than the substrate material. Here, we demonstrate a method of depositing amorphous 25% Si doped TiO2 films on various substrates, a way of sha** these films…
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High quality optical thin film materials form a basis for on-chip photonic micro- and nano-devices, where several photonic elements form an optical circuit. Their realization generally requires the thin film to have a higher refractive index than the substrate material. Here, we demonstrate a method of depositing amorphous 25% Si doped TiO2 films on various substrates, a way of sha** these films into photonic elements, such as optical waveguides and resonators, and finally, the performance of these elements. The quality of the film is estimated by measuring thin film cavity Q-factors in excess of 10^5 at a wavelength of 790 nm, corresponding to low propagation losses of 5.1 db/cm. The fabricated photonic structures were used to optically address chromium ions embedded in the substrate by evanescent coupling, therefore enabling it through film-substrate interaction. Additional functionalization of the films by do** with optically active rare-earth ions such as erbium is also demonstrated. Thus, Si:TiO2 films allow for creation of high quality photonic elements, both passive and active and also provide access to a broad range of substrates and emitters embedded therein.
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Submitted 12 February, 2017;
originally announced February 2017.
