Showing 1–22 of 22 results for author: Samkharadze, N

High-fidelity single-spin shuttling in silicon

Authors: Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Nodar Samkharadze, Önder Gül, Rick N. M. Wasserman, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms… ▽ More The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 μm in under 200 ns with an average fidelity of 99%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 15 pages, 15 figures

Low disorder and high valley splitting in silicon

Authors: Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül, Nodar Samkharadze, Corentin Déprez, Marcel Meyer, Ilja N. Meijer, Larysa Tryputen, Saurabh Karwal, Marc Botifoll, Jordi Arbiol, Sergey V. Amitonov, Lieven M. K. Vandersypen, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio… ▽ More The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors. △ Less

Submitted 2 February, 2024; v1 submitted 6 September, 2023; originally announced September 2023.

Nonlinear response and crosstalk of electrically driven silicon spin qubits

Authors: Brennan Undseth, Xiao Xue, Mohammad Mehmandoost, Maximilian Russ, Pieter T. Eendebak, Nodar Samkharadze, Amir Sammak, Viatcheslav V. Dobrovitski, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce o… ▽ More Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce operational fidelity. We identify a novel crosstalk mechanism whereby the Rabi frequency of a driven qubit is drastically changed when the drive of an adjacent qubit is turned on. These observations raise important considerations for scaling single-qubit control. △ Less

Submitted 6 January, 2023; v1 submitted 10 May, 2022; originally announced May 2022.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Applied 19, 044078 (2023)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Computing with spin qubits at the surface code error threshold

Authors: Xiao Xue, Maximilian Russ, Nodar Samkharadze, Brennan Undseth, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface… ▽ More High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Comments: 19 pages, 11 figures

Journal ref: Nature 601, 343-347 (2022)

Qubits made by advanced semiconductor manufacturing

Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 23 pages, 4 figures, 12 supplementary figures

Journal ref: Nature Electronics 5, 184-190 (2022)

Radio frequency reflectometry in silicon-based quantum dots

Authors: Y. -Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby

Abstract: RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a se… ▽ More RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s. △ Less

Submitted 6 January, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 16, 014057 (2021)

CMOS-based cryogenic control of silicon quantum circuits

Authors: Xiao Xue, Bishnu Patra, Jeroen P. G. van Dijk, Nodar Samkharadze, Sushil Subramanian, Andrea Corna, Charles Jeon, Farhana Sheikh, Esdras Juarez-Hernandez, Brando Perez Esparza, Huzaifa Rampurawala, Brent Carlton, Surej Ravikumar, Carlos Nieva, Sungwon Kim, Hyung-** Lee, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Fabio Sebastiano, Masoud Babaie, Stefano Pellerano, Edoardo Charbon, Lieven M. K. Vandersypen

Abstract: The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced l… ▽ More The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced lithography supports the fabrication of both CMOS control electronics and qubits in silicon. When the electronics are designed to operate at cryogenic temperatures, it can ultimately be integrated with the qubits on the same die or package, overcoming the wiring bottleneck. Here we report a cryogenic CMOS control chip operating at 3K, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20mK. We first benchmark the control chip and find electrical performance consistent with 99.99% fidelity qubit operations, assuming ideal qubits. Next, we use it to coherently control actual silicon spin qubits and find that the cryogenic control chip achieves the same fidelity as commercial instruments. Furthermore, we highlight the extensive capabilities of the control chip by programming a number of benchmarking protocols as well as the Deutsch-Josza algorithm on a two-qubit quantum processor. These results open up the path towards a fully integrated, scalable silicon-based quantum computer. △ Less

Submitted 29 September, 2020; originally announced September 2020.

On-chip microwave filters for high-impedance resonators with gate-defined quantum dots

Authors: Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema, Nodar Samkharadze, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertent… ▽ More Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-$Ω$ resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-k$Ω$ resonator can be improved down to 540 kHz using these filters. △ Less

Submitted 2 October, 2020; v1 submitted 11 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. Applied 14, 034025 (2020)

On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits

Authors: Y. Xu, F. K. Unseld, A. Corna, A. M. J. Zwerver, A. Sammak, D. Brousse, N. Samkharadze, S. V. Amitonov, M. Veldhorst, G. Scappucci, R. Ishihara, L. M. K. Vandersypen

Abstract: Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simult… ▽ More Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simultaneously to realize electron confinement. When a charge-locking structure is placed between the quantum device and the demultiplexer, the voltage can be maintained locally. In this study, we implement a switched-capacitor circuit for charge-locking and use it to float the plunger gate of a single quantum dot. Parallel plate capacitors, transistors and quantum dot devices are monolithically fabricated on a Si/SiGe-based substrate to avoid complex off-chip routing. We experimentally study the effects of the capacitor and transistor size on the voltage accuracy of the floating node. Furthermore, we demonstrate that the electrochemical potential of the quantum dot can follow a 100 Hz pulse signal while the dot is partially floating, which is essential for applying this strategy in qubit experiments. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Rapid high-fidelity gate-based spin read-out in silicon

Authors: G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, L. M. K. Vandersypen

Abstract: Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers,… ▽ More Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers, which hinders scaling to two-dimensional spin qubit arrays. As an alternative, gate-based dispersive read-out based on off-chip lumped element resonators were introduced, but here integration times of 0.2 to 2 ms were required to achieve single-shot read-out. Here we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio (SNR) of about six within an integration time of only 1 $μ$s. Using Pauli's exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of $>$98% in 6 $μ$s. This result may form the basis of frequency multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Comments: 5 pages, 3 figures

Journal ref: Nature Nanotechnology (2019)

Electron-Electron Interactions and the Paired-to-Nematic Quantum Phase Transition in the Second Landau Level

Authors: K. A. Schreiber, N. Samkharadze, G. C. Gardner, Y. Lyanda-Geller, M. J. Manfra, L. N. Pfeiffer, K. W. West, G. A. Csáthy

Abstract: In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor $ν=5/2$. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here… ▽ More In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor $ν=5/2$. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic. Here we show that the pressure induced paired-to-nematic transition also develops at $ν=7/2$, demonstrating therefore this transition in both spin branches of the second orbital Landau level. However, we find that pressure is not the only parameter controlling this transition. Indeed, ground states consistent with those observed under pressure also develop in a sample measured at ambient pressure, but in which the electron-electron interaction was tuned close to its value at the quantum critical point. Our experiments suggest that electron-electron interactions play a critical role in driving the paired-to-nematic transition. △ Less

Submitted 17 July, 2018; v1 submitted 2 July, 2018; originally announced July 2018.

Journal ref: Nature Nature Communications 9, 2400 (2018)

Strong spin-photon coupling in silicon

Authors: N. Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U. C. Mendes, A. Blais, G. Scappucci, L. M. K. Vandersypen

Abstract: We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, t… ▽ More We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. This result opens the way to the realization of large networks of quantum dot based spin qubit registers, removing a major roadblock to scalable quantum computing with spin qubits. △ Less

Submitted 6 November, 2017; originally announced November 2017.

Onset of Quantum Criticality in the Topological-to-Nematic Transition in a Two-dimensional Electron Gas at Filling Factor $ν=5/2$

Authors: K. A. Schreiber, N. Samkharadze, G. C. Gardner, Rudro R. Biswas, M. J. Manfra, G. A. Csáthy

Abstract: Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $ν=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two… ▽ More Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $ν=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset temperature of the stripe phase we mapped out a phase diagram of these competing phases in the pressure-temperature plane. Our data highlight the dichotomy of two descriptions of the half-filled Landau level near the quantum critical point: one based on electrons and another on composite fermions. △ Less

Submitted 7 July, 2017; originally announced July 2017.

Journal ref: PRB 96, 041107(R) (2017)

High Kinetic Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field

Authors: N. Samkharadze, A. Bruno, P. Scarlino, G. Zheng, D. P. DiVincenzo, L. DiCarlo, L. M. K. Vandersypen

Abstract: We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resilient to magnetic fields. Measured intrinsic quality factors exceed $2\times 10^5$ in a $6$ T in-plane magnetic field, and $3\times 10^4$ in a $350$ mT perpendicular magnetic field. Due to their high characteristic imped… ▽ More We present superconducting microwave-frequency resonators based on NbTiN nanowires. The small cross section of the nanowires minimizes vortex generation, making the resonators resilient to magnetic fields. Measured intrinsic quality factors exceed $2\times 10^5$ in a $6$ T in-plane magnetic field, and $3\times 10^4$ in a $350$ mT perpendicular magnetic field. Due to their high characteristic impedance, these resonators are expected to develop zero-point voltage fluctuations one order of magnitude larger than in standard coplanar waveguide resonators. These properties make the nanowire resonators well suited for circuit QED experiments needing strong coupling to quantum systems with small electric dipole moments and requiring a magnetic field, such as electrons in single and double quantum dots. △ Less

Submitted 5 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. Applied 5, 044004 (2016)

Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase

Authors: N. Samkharadze, K. A. Schreiber, G. C. Gardner, M. J. Manfra, E. Fradkin, G. A. Csáthy

Abstract: Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a second class of phases, those with topological order, was necessary. Phase transitions within the first class of phases involve a change in symmetry, whereas those between topological phases require a change in topological or… ▽ More Until the late 1980s, phases of matter were understood in terms of Landau's symmetry breaking theory. Following the discovery of the quantum Hall effect the introduction of a second class of phases, those with topological order, was necessary. Phase transitions within the first class of phases involve a change in symmetry, whereas those between topological phases require a change in topological order. However, in rare cases transitions may occur between the two classes in which the vanishing of the topological order is accompanied by the emergence of a broken symmetry. Here, we report the existence of such a transition in a two-dimensional electron gas hosted by a GaAs/AlGaAs crystal. When tuned by hydrostatic pressure, the $ν=5/2$ fractional quantum Hall state, believed to be a prototype non-Abelian topological phase, gives way to a quantum Hall nematic phase. Remarkably, this nematic phase develops spontaneously, in the absence of any externally applied symmetry breaking fields. △ Less

Submitted 11 September, 2015; originally announced September 2015.

Journal ref: Nat. Phys. 12, 191 (2016)

Observation of Incompressibility at $ν=4/11$ and $ν=5/13$

Authors: N. Samkharadze, I. Arnold, L. N. Pfeiffer, K. W. West, G. A. Csáthy

Abstract: The region of filling factors $1/3<ν<2/5$ is predicted to support new types of fractional quantum Hall states with topological order different from that of the Laughlin-Jain or the Moore-Read states. Incompressibility is a necessary condition for the formation of such novel topological states. We find that at 6.9~mK incompressibility develops only at $ν=4/11$ and $5/13$, while the states at… ▽ More The region of filling factors $1/3<ν<2/5$ is predicted to support new types of fractional quantum Hall states with topological order different from that of the Laughlin-Jain or the Moore-Read states. Incompressibility is a necessary condition for the formation of such novel topological states. We find that at 6.9~mK incompressibility develops only at $ν=4/11$ and $5/13$, while the states at $ν=6/17$ and $3/8$ remain compressible. Our observations at $ν=4/11$ and $5/13$ are first steps towards understanding emergent topological order in these fractional quantum Hall states. △ Less

Submitted 28 December, 2014; originally announced December 2014.

Journal ref: Phys. Rev. B 91, 081109 (2015)

Observation of an anomalous density-dependent energy gap of the $ν=5/2$ fractional quantum Hall state in the low density regime

Authors: N. Samkharadze, Dohyung Ro, L. N. Pfeiffer, K. W. West, G. A. Csáthy

Abstract: We have studied the $ν=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $κ$ spans the $2.52<κ<2.82$ range. In the vicinity of $5.8 \times 10^{10}$~cm$^{-2}$ or $κ= 2.6$ an anomalously large change in the density dependence of the energy gap is observed. Possible origin… ▽ More We have studied the $ν=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $κ$ spans the $2.52<κ<2.82$ range. In the vicinity of $5.8 \times 10^{10}$~cm$^{-2}$ or $κ= 2.6$ an anomalously large change in the density dependence of the energy gap is observed. Possible origins of such an anomaly are discussed, including a topological phase transition in the $ν=5/2$ fractional quantum Hall state. △ Less

Submitted 7 August, 2017; v1 submitted 6 February, 2013; originally announced February 2013.

Journal ref: PRB 96, 085105 (2017)

Quantitative Analysis of the Disorder Broadening and the Intrinsic Gap for the $ν=5/2$ Fractional Quantum Hall State

Authors: N. Samkharadze, J. D. Watson, G. Gardner, M. J. Manfra, L. N. Pfeiffer, K. W. West, G. A. Csáthy

Abstract: We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained ener… ▽ More We report a reliable method to estimate the disorder broadening parameter from the scaling of the gaps of the even and major odd denominator fractional quantum Hall states of the second Landau level. We apply this technique to several samples of vastly different densities and grown in different MBE chambers. Excellent agreement is found between the estimated intrinsic and numerically obtained energy gaps for the $ν=5/2$ fractional quantum Hall state. Futhermore, we quantify, for the first time, the dependence of the intrinsic gap at $ν=5/2$ on Landau level mixing. △ Less

Submitted 18 October, 2011; v1 submitted 15 August, 2011; originally announced August 2011.

Comments: PRB 84, R121305 (2011)

Integrated Electronic Transport and Thermometry at milliKelvin Temperatures and in Strong Magnetic Fields

Authors: N. Samkharadze, A. Kumar, M. J. Manfra, L. N. Pfeiffer, K. W. West, G. A. Csathy

Abstract: We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is… ▽ More We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail. We provide evidence that the temperature of two-dimensional electron gas confined to a GaAs quantum well follows the temperature of the quartz viscometer down to 4mK. △ Less

Submitted 11 May, 2011; originally announced May 2011.

Journal ref: published in Rev. Sci. Instrum. 82, 053902 (2011)

A new type of carbon resistance thermometer with excellent thermal contact at millikelvin temperatures

Authors: Nodar Samkharadze, Ashwani Kumar, Gábor A. Csáthy

Abstract: Using a new brand of commercially available carbon resistor we built a cryogenic thermometer with an extremely good thermal contact to its thermal environment. Because of its superior thermal contact the thermometer is insensitive to low levels of spurious radio frequency heating. We calibrated our thermometer down to 5mK using a quartz tuning fork He-3 viscometer and measured its thermal resistan… ▽ More Using a new brand of commercially available carbon resistor we built a cryogenic thermometer with an extremely good thermal contact to its thermal environment. Because of its superior thermal contact the thermometer is insensitive to low levels of spurious radio frequency heating. We calibrated our thermometer down to 5mK using a quartz tuning fork He-3 viscometer and measured its thermal resistance and thermal response time. △ Less

Submitted 19 September, 2010; originally announced September 2010.

Comments: 5 pages, 4 figures

Journal ref: J.Low.Temp.Phys.160:246-253,2010

Particle-hole Asymmetry of Fractional Quantum Hall States in the Second Landau Level of a Two-dimensional Hole System

Authors: A. Kumar, N. Samkharadze, M. J. Manfra, G. A. Csathy, L. N. Pfeiffer, K. W. West

Abstract: We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $ν=8/3$. We identified this state by a quantized Hall resistance and an activated temperature dependence of the longitudinal resistance and found an energy gap of 40 mK. To our surprise the particle-hole conjugate state at filling factor $ν=7/3$… ▽ More We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $ν=8/3$. We identified this state by a quantized Hall resistance and an activated temperature dependence of the longitudinal resistance and found an energy gap of 40 mK. To our surprise the particle-hole conjugate state at filling factor $ν=7/3$ in our sample does not develop down to 6.9 mK. This observation is contrary to that in electron samples in which the 7/3 state is typically more stable than the 8/3 state. We present evidence that the asymmetry between the 7/3 and 8/3 states in our hole sample is due to Landau level mixing. △ Less

Submitted 14 May, 2011; v1 submitted 8 July, 2010; originally announced July 2010.

Journal ref: Phys. Rev. B 83, 201305(R) (2011)