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Orbital selective switching of ferromagnetism in an oxide quasi two-dimensional electron gas
Authors:
R. Di Capua,
M. Verma,
M. Radovic,
V. N. Strocov,
C. Piamonteze,
E. B. Guedes,
N. Plumb,
Yu Chen,
M. D'Antuono,
G. M. De Luca,
E. Di Gennaro,
D. Stornaiuolo,
D. Preziosi,
B. Jouault,
F. Miletto Granozio,
A. Sambri,
R. Pentcheva,
G. Ghiringhelli,
M. Salluzzo
Abstract:
Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By us…
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Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications.
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Submitted 13 September, 2021;
originally announced September 2021.
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Multiple-magnon excitations shape the spin spectrum of cuprate parent compounds
Authors:
Davide Betto,
Roberto Fumagalli,
Leonardo Martinelli,
Matteo Rossi,
Riccardo Piombo,
Kazuyoshi Yoshimi,
Daniele Di Castro,
Emiliano Di Gennaro,
Alessia Sambri,
Doug Bonn,
George A. Sawatzky,
Lucio Braicovich,
Nicholas B. Brookes,
Jose Lorenzana,
Giacomo Ghiringhelli
Abstract:
Thanks to high resolution and polarization analysis, resonant inelastic x-ray scattering (RIXS) magnetic spectra of La2CuO4, Sr2CuO2Cl2 and CaCuO2 reveal a rich set of properties of the spin 1/2 antiferromagnetic square lattice of cuprates. The leading single-magnon peak energy dispersion is in excellent agreement with the corresponding inelastic neutron scattering measurements. However, the RIXS…
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Thanks to high resolution and polarization analysis, resonant inelastic x-ray scattering (RIXS) magnetic spectra of La2CuO4, Sr2CuO2Cl2 and CaCuO2 reveal a rich set of properties of the spin 1/2 antiferromagnetic square lattice of cuprates. The leading single-magnon peak energy dispersion is in excellent agreement with the corresponding inelastic neutron scattering measurements. However, the RIXS data unveil an asymmetric lineshape possibly due to odd higher order terms. Moreover, a sharp bimagnon feature emerges from the continuum at (1/2,0), coincident in energy with the bimagnon peak detected in optical spectroscopy. These findings show that the inherently complex spin spectra of cuprates, an exquisite manifestation of quantum magnetism, can be effectively explored by exploiting the richness of RIXS cross sections.
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Submitted 8 February, 2021;
originally announced February 2021.
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Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes
Authors:
Alessia Sambri,
Mario Scuderi,
Anita Guarino,
Emiliano Di Gennaro,
Ricci Erlandsen,
Rasmus T. Dahm,
Anders V. Bjørlig,
Dennis V. Christensen,
Roberto Di Capua,
Bartolomeo Della Ventura,
Umberto Scotti di Uccio,
Salvatore Mirabella,
Giuseppe Nicotra,
Corrado Spinella,
Thomas S. Jespersen,
Fabio Miletto Granozio
Abstract:
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi…
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Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.
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Submitted 17 September, 2020; v1 submitted 15 September, 2020;
originally announced September 2020.
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Large polarons as key quasiparticles in SrTiO3 and SrTiO3-based heterostructures
Authors:
Andrey Geondzhian,
Alessia Sambri,
Gabriella M. De Luca,
Roberto Di Capua,
Emiliano Di Gennaro,
Davide Betto,
Matteo Rossi,
Ying Ying Peng,
Roberto Fumagalli,
Nicholas B. Brookes,
Lucio Braicovich,
Keith Gilmore,
Giacomo Ghiringhelli,
Marco Salluzzo
Abstract:
Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in the nature of the quasiparticles sha** the electronic and conduction properties of STO is needed. We studied the low energy excitations of bulk STO and of the…
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Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in the nature of the quasiparticles sha** the electronic and conduction properties of STO is needed. We studied the low energy excitations of bulk STO and of the LaAlO$_{3}$/SrTiO$_{3}$ two dimensional electron gas (2DEG) by Ti L$_3$ edge resonant inelastic x-ray scattering. In all samples, we find the hallmark of polarons in the form of intense $dd$+phonon excitations, and a decrease of the LO3-mode electron-phonon coupling when going from insulating to highly conducting STO single crystals and heterostructures. Both results are attributed to the dynamic screening of the large polaron self-induced polarization, showing that the low temperature physics of STO and STO-based 2DEGs is dominated by large polaron quasiparticles.
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Submitted 5 May, 2020;
originally announced May 2020.
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Symmetry breaking at the (111) interfaces of SrTiO${_3}$ hosting a 2D-electron system
Authors:
G. M. De Luca,
R. Di Capua,
E. Di Gennaro,
A. Sambri,
F. Miletto Granozio,
G. Ghiringhelli,
D. Betto,
C. Piamonteze,
N. B. Brookes,
M. Salluzzo
Abstract:
We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$…
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We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$${_h}$ crystal field is turned into trigonal D${_3}$${_d}$ crystal field in all cases. The symmetry adapted a${_1}$${_g}$ and e${^π_g}$ orbitals are non-degenerate in energy and their splitting, Δ, is positive at the bare STO surface but negative in the heterostructures, where the a${_1}$${_g}$ orbital is lowest in energy. These results demonstrate that the interfacial symmetry breaking induced by epitaxial engineering of oxide interfaces has a dramatic effect on their electronic properties, and it can be used to manipulate the ground state of the q2DES.
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Submitted 10 September, 2018; v1 submitted 27 June, 2018;
originally announced June 2018.
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Infrared study of the quasi-two-dimensional electron system at the interface between SrTiO$_{3}$ and crystalline or amorphous LaAlO$_3$
Authors:
A. Nucara,
M. Corasaniti,
A. Kalaboukhov,
M. Ortolani,
E. Falsetti,
A. Sambri,
F. Miletto Granozio,
F. Capitani,
J. -B. Brubach,
P. Roy,
U. Schade,
P. Calvani
Abstract:
We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO$_{3}$ (STO) and a thin film of LaAlO$_3$ (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its t…
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We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO$_{3}$ (STO) and a thin film of LaAlO$_3$ (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its thickness, the charge density and mobility of the carriers under crystalline LAO (sample A), and the charge density under amorphous LAO (sample B). This quantity turns out to be higher than in sample A, but a comparison with Hall measurements shows that under amorphous LAO the charges are partly localized at low $T$ with a low activation energy (about 190 K in $k_B$ units), and are thermally activated according to a model for large polarons. The thickness of the q-2DES extracted from our spectra turns out to be 4 $\pm 1$ nm for crystalline LAO, 7 $\pm 2$ nm for amorphous LAO.
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Submitted 22 February, 2018;
originally announced February 2018.
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Non-volatile, reversible metal-insulator transition in oxide interfaces controlled by gate voltage and light
Authors:
Mian Akif Safeen,
Musa Mutlu Can,
Amit Khare,
Emiliano Di Gennaro,
Alessia Sambri,
Antonio Leo,
Nicola. Scopigno,
Umberto Scotti di Uccio,
Fabio Miletto Granozio
Abstract:
The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron…
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The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron gas are simply modeled as capacitor plates, dramatically fails in describing the observed phenomenology. Anomalies appearing after the first low-temperature application of a positive gate bias, and causing a non-volatile perturbation of sample properties, are observed in all our samples. Such anomalies are shown to drive low-carrier density samples to a persistent insulating state. Recovery of the pristine metallic state can be either obtained by a long room-temperature field annealing, or, instantaneously, by a relatively modest dose of visible-range photons. Illumination causes a sudden collapse of the electron system back to the metallic ground state, with a resistivity drop exceeding four orders of magnitude. The data are discussed and interpreted on the base of the analogy with floating-gate MOSFET devices, which sheds a new light on the effects of back-gating on oxide-based 2-dimensional electron gases. A more formal approach, allowing for a semi-quantitative estimate of the relevant surface carrier densities for different samples and under different back-gate voltages, is proposed in the Appendix.
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Submitted 13 January, 2017;
originally announced January 2017.
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Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems
Authors:
I. Aliaj,
I. Torre,
V. Miseikis,
E. di Gennaro,
A. Sambri,
A. Gamucci,
C. Coletti,
F. Beltram,
F. M. Granozio,
M. Polini,
V. Pellegrini,
S. Roddaro
Abstract:
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed fo…
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We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.
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Submitted 24 February, 2016;
originally announced February 2016.
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Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure
Authors:
Carmela Aruta,
Salvarore Amoruso,
Giovanni Ausanio,
Riccardo Bruzzese,
Emiliano Di Gennaro,
Marco Lanzano,
Fabio Miletto Granozio,
Muhammad Riaz,
Alessia Sambri,
Umberto Scotti di Uccio,
Xuan Wang
Abstract:
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the inte…
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We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.
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Submitted 6 April, 2012; v1 submitted 2 January, 2012;
originally announced January 2012.
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Time-resolved photoluminescence of n-doped SrTiO_3
Authors:
A. Rubano,
D. Paparo,
M. Radovic,
A. Sambri,
F. Miletto Granozio,
U. Scotti di Uccio,
L. Marrucci
Abstract:
Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The do**-effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dy…
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Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The do**-effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dynamic features and the yields of the emission. Our time-resolved analysis, besides shedding some light on the basic recombination mechanisms acting in these materials, sets the intrinsic bandwidth limit of the proposed blue light emitting optoelectronic devices made of Ti-based perovskites heterostructures in the GHz range.
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Submitted 20 February, 2008;
originally announced February 2008.
