Inverse magnetic hysteresis of the Josephson supercurrent: study of the magnetic properties of thin niobium/permalloy (Fe_{20}Ni_{80}) interfaces
Authors:
Roberta Satariano,
Loredana Parlato,
Antonio Vettoliere,
Roberta Caruso,
Halima Giovanna Ahmad,
Alessandro Miano,
Luigi Di Palma,
Daniela Salvoni,
Domenico Montemurro,
Carmine Granata,
Gianrico Lamura,
Francesco Tafuri,
Giovanni Piero Pepe,
Davide Massarotti,
Giovanni Ausanio
Abstract:
We propose a picture for the magnetic properties of superconductor/ferromagnet (S/F) heterostructures based on Nb and permalloy (Py: Fe_{20}Ni_{80}). By measuring the magnetic moment as a function of the temperature in S/F/S trilayers for different thicknesses of the middle F layer, we give evidence of the presence of a magnetic stray field of the F layer. For values of F-layer thickness below a t…
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We propose a picture for the magnetic properties of superconductor/ferromagnet (S/F) heterostructures based on Nb and permalloy (Py: Fe_{20}Ni_{80}). By measuring the magnetic moment as a function of the temperature in S/F/S trilayers for different thicknesses of the middle F layer, we give evidence of the presence of a magnetic stray field of the F layer. For values of F-layer thickness below a threshold, we establish a correlation between the magnetic measurements of the S/F/S trilayers and the anomalous magnetic dependence of the critical current in S/insulator/thin superconducting film/F/S (SIsFS) Josephson junctions (JJs). These complementary investigations provide a self-consistent method to fully characterize S/F heterostructures and possibly demonstrate effects arising from the mutual interactions between ferromagnetism and superconductivity. A shift in the Fraunhofer critical current oscillations has been observed in the opposite direction to the one commonly observed in JJs with F barriers, as it has been recently predicted by inverse and electromagnetic proximity theories. This inverse memory effect is relevant for the design of these heterostructures as memory cells and spintronic devices.
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Submitted 5 July, 2021;
originally announced July 2021.
