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Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
Authors:
L. Massai,
B. Hetényi,
M. Mergenthaler,
F. J. Schupp,
L. Sommer,
S. Paredes,
S. W. Bedell,
P. Harvey-Collard,
G. Salis,
A. Fuhrer,
N. W. Hendrickx
Abstract:
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with…
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Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trap** of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.
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Submitted 9 October, 2023;
originally announced October 2023.
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Capacitive crosstalk in gate-based dispersive sensing of spin qubits
Authors:
Eoin G. Kelly,
Alexei Orekhov,
Nico Hendrickx,
Matthias Mergenthaler,
Felix Schupp,
Stephan Paredes,
Rafael S. Eggli,
Andreas V. Kuhlmann,
Patrick Harvey-Collard,
Andreas Fuhrer,
Gian Salis
Abstract:
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach…
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In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk.
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Submitted 19 September, 2023;
originally announced September 2023.
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Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
Authors:
N. W. Hendrickx,
L. Massai,
M. Mergenthaler,
F. Schupp,
S. Paredes,
S. W. Bedell,
G. Salis,
A. Fuhrer
Abstract:
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie…
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Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie qubit driving and decoherence are still mostly unclear. Here, we report on the highly anisotropic heavy-hole $g$-tensor and its dependence on electric fields, allowing us to relate both qubit driving and decoherence to an electric modulation of the $g$-tensor. We also confirm the predicted Ising-type hyperfine interaction but show that qubit coherence is ultimately limited by $1/f$ charge noise. Finally, we operate the qubit at low magnetic field and measure a dephasing time of $T_2^*=9.2$ $μ$s, while maintaining a single-qubit gate fidelity of 99.94 %, that remains well above 99 % at an operation temperature T>1 K. This understanding of qubit driving and decoherence mechanisms are key for the design and operation of scalable and highly coherent hole qubit arrays.
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Submitted 24 November, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
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Readout of quantum devices with a sideband microwave interferometer immune to systematic noise
Authors:
N. Crescini,
E. G. Kelly,
G. Salis,
A. Fuhrer
Abstract:
The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule signals, typically achieved by reflecting a microwave tone off a resonator that is coupled to the qubit. Noise from cabling and amplification, e.g. from temper…
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The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule signals, typically achieved by reflecting a microwave tone off a resonator that is coupled to the qubit. Noise from cabling and amplification, e.g. from temperature variations, can be detrimental to readout fidelity. We present an approach to detect phase and amplitude changes of a device under test based on the differential measurement of microwave tones generated by two first-order sidebands of a carrier signal. The two microwave tones are sent through the same cable to the measured device that exhibits a narrow-band response for one sideband and leaves the other unaffected. The reflected sidebands are interfered by down-conversion with the carrier. By choosing amplitude and phases of the sidebands, suppression of either common amplitude or common phase noise can be achieved, allowing for fast, stable measurements of frequency shifts and quality factors of resonators. Test measurements were performed on NbN superconducting resonators at 25 mK to calibrate and characterise the experimental setup, and to study time-dependent fluctuations of their resonance frequency.
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Submitted 13 March, 2023;
originally announced March 2023.
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Modular nanomagnet design for spin qubits confined in a linear chain
Authors:
Michele Aldeghi,
Rolf Allenspach,
Gian Salis
Abstract:
On-chip micromagnets enable electrically controlled quantum gates on electron spin qubits. Extending the concept to a large number of qubits is challenging in terms of providing large enough driving gradients and individual addressability. Here we present a design aimed at driving spin qubits arranged in a linear chain and strongly confined in directions lateral to the chain. Nanomagnets are place…
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On-chip micromagnets enable electrically controlled quantum gates on electron spin qubits. Extending the concept to a large number of qubits is challenging in terms of providing large enough driving gradients and individual addressability. Here we present a design aimed at driving spin qubits arranged in a linear chain and strongly confined in directions lateral to the chain. Nanomagnets are placed laterally to one side of the qubit chain, one nanomagnet per two qubits. The individual magnets are "U"-shaped, such that the magnetic shape anisotropy orients the magnetization alternately towards and against the qubit chain even if an external magnetic field is applied along the qubit chain. The longitudinal and transversal stray field components serve as addressability and driving fields. Using micromagnetic simulations we calculate driving and dephasing rates and the corresponding qubit quality factor. The concept is validated with spin-polarized scanning electron microscopy of Fe nanomagnets fabricated on silicon substrates, finding excellent agreement with micromagnetic simulations. Several features required for a scalable spin qubit design are met in our approach: strong driving and weak dephasing gradients, reduced crosstalk and operation at low external magnetic field.
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Submitted 22 December, 2022;
originally announced December 2022.
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Direct implementation of a perceptron in superconducting circuit quantum hardware
Authors:
Marek Pechal,
Federico Roy,
Samuel A. Wilkinson,
Gian Salis,
Max Werninghaus,
Michael J. Hartmann,
Stefan Filipp
Abstract:
The utility of classical neural networks as universal approximators suggests that their quantum analogues could play an important role in quantum generalizations of machine-learning methods. Inspired by the proposal in [Torrontegui and García-Ripoll 2019 EPL 125 30004], we demonstrate a superconducting qubit implementation of an adiabatic controlled gate, which generalizes the action of a classica…
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The utility of classical neural networks as universal approximators suggests that their quantum analogues could play an important role in quantum generalizations of machine-learning methods. Inspired by the proposal in [Torrontegui and García-Ripoll 2019 EPL 125 30004], we demonstrate a superconducting qubit implementation of an adiabatic controlled gate, which generalizes the action of a classical perceptron as the basic building block of a quantum neural network. We show full control over the steepness of the perceptron activation function, the input weight and the bias by tuning the adiabatic gate length, the coupling between the qubits and the frequency of the applied drive, respectively. In its general form, the gate realizes a multi-qubit entangling operation in a single step, whose decomposition into single- and two-qubit gates would require a number of gates that is exponential in the number of qubits. Its demonstrated direct implementation as perceptron in quantum hardware may therefore lead to more powerful quantum neural networks when combined with suitable additional standard gates.
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Submitted 24 November, 2021;
originally announced November 2021.
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Effects of surface treatments on flux tunable transmon qubits
Authors:
M. Mergenthaler,
C. Müller,
M. Ganzhorn,
S. Paredes,
P. Müller,
G. Salis,
V. P. Adiga,
M. Brink,
M. Sandberg,
J. B. Hertzberg,
S. Filipp,
A. Fuhrer
Abstract:
One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been ide…
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One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been identified as sources of noise and dissipation in solid-state quantum devices. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure and ion irradiation treatments on coherence and slow parameter fluctuations of flux tunable superconducting transmon qubits. We analyse the effects of each of these surface treatments by comparing averages over many individual qubits and measurements before and after treatment. The treatments studied do not significantly impact the relaxation rate $Γ_1$ and the echo dephasing rate $Γ_2^\textrm{e}$, except for Ne ion bombardment which reduces $Γ_1$. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH$_3$ treatments. Additionally, we demonstrate that SF$_6$ ion bombardment can be used to adjust qubit frequencies in-situ and post fabrication without affecting qubit coherence at the sweet spot.
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Submitted 14 March, 2021;
originally announced March 2021.
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Characterization and tomography of a hidden qubit
Authors:
M. Pechal,
G. Salis,
M. Ganzhorn,
D. J. Egger,
M. Werninghaus,
S. Filipp
Abstract:
In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some qubits may be 'hidden' and lacking direct addressability through dedicated control and readout lines, for instance because of limited on-chip routing capabilitie…
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In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some qubits may be 'hidden' and lacking direct addressability through dedicated control and readout lines, for instance because of limited on-chip routing capabilities, or because the number of control lines becomes a limiting factor for many-qubit systems. In this case, no single-qubit operations can be applied to the hidden qubits and their state cannot be measured directly. Instead, they may be controlled and read out only via single-qubit operations on connected 'control' qubits and a suitable set of two-qubit gates. We first discuss the impact of such restricted control capabilities on the quantum volume of specific qubit coupling networks. We then experimentally demonstrate full control and measurement capabilities in a superconducting two-qubit device with local single-qubit control and iSWAP and controlled-phase two-qubit interactions enabled by a tunable coupler. We further introduce an iterative tune-up process required to completely characterize the gate set used for quantum process tomography and evaluate the resulting gate fidelities.
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Submitted 17 November, 2020;
originally announced November 2020.
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Control of Spin Relaxation Anisotropy by Spin-Orbit-Coupled Diffusive Spin Motion
Authors:
Daisuke Iizasa,
Asuka Aoki,
Takahito Saito,
Junsaku Nitta,
Gian Salis,
Makoto Kohda
Abstract:
Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the ind…
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Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position, resulting in spin precession because of the diffusion-induced spin-orbit field. Near the cancellation between spin-orbit field and external magnetic field, the induced spin precession frequency depends nonlinearly on the diffusion velocity, which is unexpected from the conventional linear relation between the spin-orbit field and the electron velocity.This behavior originates from an enhancement of the spin relaxation anisotropy by the electron velocity perpendicular to the diffused direction. We demonstrate that the spin relaxation anisotropy, which has been regarded as a material constant, can be controlled via diffusive electron motion.
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Submitted 15 June, 2020;
originally announced June 2020.
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Benchmarking the noise sensitivity of different parametric two-qubit gates in a single superconducting quantum computing platform
Authors:
M. Ganzhorn,
G. Salis,
D. J. Egger,
A. Fuhrer,
M. Mergenthaler,
C. Müller,
P. Müller,
S. Paredes,
M. Pechal,
M. Werninghaus,
S. Filipp
Abstract:
The possibility to utilize different types of two-qubit gates on a single quantum computing platform adds flexibility in the decomposition of quantum algorithms. A larger hardware-native gate set may decrease the number of required gates, provided that all gates are realized with high fidelity. Here, we benchmark both controlled-Z (CZ) and exchange-type (iSWAP) gates using a parametrically driven…
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The possibility to utilize different types of two-qubit gates on a single quantum computing platform adds flexibility in the decomposition of quantum algorithms. A larger hardware-native gate set may decrease the number of required gates, provided that all gates are realized with high fidelity. Here, we benchmark both controlled-Z (CZ) and exchange-type (iSWAP) gates using a parametrically driven tunable coupler that mediates the interaction between two superconducting qubits. Using randomized benchmarking protocols we estimate an error per gate of $0.9\pm0.03\%$ and $1.3\pm0.4\%$ fidelity for the CZ and the iSWAP gate, respectively. We argue that spurious $ZZ$-type couplings are the dominant error source for the iSWAP gate, and that phase stability of all microwave drives is of utmost importance. Such differences in the achievable fidelities for different two-qubit gates have to be taken into account when map** quantum algorithms to real hardware.
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Submitted 14 May, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
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Time-resolved tomography of a driven adiabatic quantum simulation
Authors:
Gian Salis,
Nikolaj Moll,
Marco Roth,
Marc Ganzhorn,
Stefan Filipp
Abstract:
A typical goal of a quantum simulation is to find the energy levels and eigenstates of a given Hamiltonian. This can be realized by adiabatically varying the system control parameters to steer an initial eigenstate into the eigenstate of the target Hamiltonian. Such an adiabatic quantum simulation is demonstrated by directly implementing a controllable and smoothly varying Hamiltonian in the rotat…
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A typical goal of a quantum simulation is to find the energy levels and eigenstates of a given Hamiltonian. This can be realized by adiabatically varying the system control parameters to steer an initial eigenstate into the eigenstate of the target Hamiltonian. Such an adiabatic quantum simulation is demonstrated by directly implementing a controllable and smoothly varying Hamiltonian in the rotating frame of two superconducting qubits, including longitudinal and transverse fields and iSWAP-type two-qubit interactions. The evolution of each eigenstate is tracked using time-resolved state tomography. The energy gaps between instantaneous eigenstates are chosen such that depending on the energy transition rate either diabatic or adiabatic passages are observed in the measured energies and correlators. Errors in the obtained energy values induced by finite $T_1$ and $T_2$ times of the qubits are mitigated by extrapolation to short protocol times.
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Submitted 15 January, 2020;
originally announced January 2020.
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Short-depth trial-wavefunctions for the variational quantum eigensolver based on the problem Hamiltonian
Authors:
Gian Salis,
Nikolaj Moll
Abstract:
For the variational quantum eigensolver we propose to generate trial wavefunctions from a small amount of selected Pauli terms of the problem Hamiltonian. Two different approaches, one inspired by the quantum approximate optimization algorithm and the other by imaginary-time evolution, are proposed and studied in detail. Using numerical calculations, we study the efficiency of these trial wavefunc…
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For the variational quantum eigensolver we propose to generate trial wavefunctions from a small amount of selected Pauli terms of the problem Hamiltonian. Two different approaches, one inspired by the quantum approximate optimization algorithm and the other by imaginary-time evolution, are proposed and studied in detail. Using numerical calculations, we study the efficiency of these trial wavefunctions for finding the ground-state energy of three molecules: H2, LiH and H2O. We find that only a small number of Pauli terms are needed to reach chemical accuracy, leading to short-depth quantum circuits with a small number of variational parameters. For the LiH molecule, the quantum circuit consists of 36 two-qubit gates, 45 one-qubit gates, and four variational parameters, with a favorable scaling for larger molecules.
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Submitted 26 August, 2019;
originally announced August 2019.
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Gate-efficient simulation of molecular eigenstates on a quantum computer
Authors:
Marc Ganzhorn,
Daniel J. Egger,
Panagiotis Kl. Barkoutsos,
Pauline Ollitrault,
Gian Salis,
Nikolaj Moll,
Andreas Fuhrer,
Peter Mueller,
Stefan Woerner,
Ivano Tavernelli,
Stefan Filipp
Abstract:
A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence is to reduce the number of gates by implementing a gate set that matches the requirements of the specific algorithm of interest directly in hardware.…
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A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence is to reduce the number of gates by implementing a gate set that matches the requirements of the specific algorithm of interest directly in hardware. Here, we show that exchange-type gates are a promising choice for simulating molecular eigenstates on near-term quantum devices since these gates preserve the number of excitations in the system. Complementing the theoretical work by Barkoutsos et al. [PRA 98, 022322 (2018)], we report on the experimental implementation of a variational algorithm on a superconducting qubit platform to compute the eigenstate energies of molecular hydrogen. We utilize a parametrically driven tunable coupler to realize exchange-type gates that are configurable in amplitude and phase on two fixed-frequency superconducting qubits. With gate fidelities around 95% we are able to compute the eigenstates within an accuracy of 50 mHartree on average, a limit set by the coherence time of the tunable coupler.
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Submitted 13 September, 2018;
originally announced September 2018.
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Universal nuclear focusing of confined electron spins
Authors:
Sergej Markmann,
Christian Reichl,
Werner Wegscheider,
Gian Salis
Abstract:
For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe s…
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For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe spectroscopy. A feedback mechanism between the saturable electron spin polarization and the nuclear system focuses the electron spin precession frequency into discrete spin modes. Employing such control of nuclear spin polarization, the electron spin lifetime within individual dots can surpass the limit of nuclear background fluctuations, thus substantially enhancing the spin coherence time. This opens the door to achieve long electron spin coherence times also in lithographically-defined many-electron systems that can be controlled in shape, size and position.
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Submitted 20 August, 2018;
originally announced August 2018.
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Adiabatic quantum simulations with driven superconducting qubits
Authors:
Marco Roth,
Nikolaj Moll,
Gian Salis,
Marc Ganzhorn,
Daniel J. Egger,
Stefan Filipp,
Sebastian Schmidt
Abstract:
We propose a quantum simulator based on driven superconducting qubits where the interactions are generated parametrically by a polychromatic magnetic flux modulation of a tunable bus element. Using a time-dependent Schrieffer-Wolff transformation, we analytically derive a multi-qubit Hamiltonian which features independently tunable $XX$ and $YY$-type interactions as well as local bias fields over…
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We propose a quantum simulator based on driven superconducting qubits where the interactions are generated parametrically by a polychromatic magnetic flux modulation of a tunable bus element. Using a time-dependent Schrieffer-Wolff transformation, we analytically derive a multi-qubit Hamiltonian which features independently tunable $XX$ and $YY$-type interactions as well as local bias fields over a large parameter range. We demonstrate the adiabatic simulation of the ground state of a hydrogen molecule using two superconducting qubits and one tunable bus element. The time required to reach chemical accuracy lies in the few microsecond range and therefore could be implemented on currently available superconducting circuits. Further applications of this technique may also be found in the simulation of interacting spin systems.
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Submitted 21 August, 2018; v1 submitted 14 August, 2018;
originally announced August 2018.
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Quantum algorithms for electronic structure calculations: particle/hole Hamiltonian and optimized wavefunction expansions
Authors:
Panagiotis Kl. Barkoutsos,
Jerome F. Gonthier,
Igor Sokolov,
Nikolaj Moll,
Gian Salis,
Andreas Fuhrer,
Marc Ganzhorn,
Daniel J. Egger,
Matthias Troyer,
Antonio Mezzacapo,
Stefan Filipp,
Ivano Tavernelli
Abstract:
In this work we investigate methods to improve the efficiency and scalability of quantum algorithms for quantum chemistry applications. We propose a transformation of the electronic structure Hamiltonian in the second quantization framework into the particle-hole (p/h) picture, which offers a better starting point for the expansion of the trial wavefunction. The state of the molecular system at st…
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In this work we investigate methods to improve the efficiency and scalability of quantum algorithms for quantum chemistry applications. We propose a transformation of the electronic structure Hamiltonian in the second quantization framework into the particle-hole (p/h) picture, which offers a better starting point for the expansion of the trial wavefunction. The state of the molecular system at study is parametrized in a way to efficiently explore the sector of the molecular Fock space that contains the desired solution. To this end, we explore several trial wavefunctions to identify the most efficient parameterization of the molecular ground state. Taking advantage of known post-Hartree Fock quantum chemistry approaches and heuristic Hilbert space search quantum algorithms, we propose a new family of quantum circuits based on exchange-type gates that enable accurate calculations while kee** the gate count (i.e., the circuit depth) low. The particle-hole implementation of the Unitary Coupled Cluster (UCC) method within the Variational Quantum Eigensolver approach gives rise to an efficient quantum algorithm, named q-UCC , with important advantages compared to the straightforward 'translation' of the classical Coupled Cluster counterpart. In particular, we show how a single Trotter step can accurately and efficiently reproduce the ground state energies of simple molecular systems.
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Submitted 11 May, 2018;
originally announced May 2018.
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Entanglement generation in superconducting qubits using holonomic operations
Authors:
Daniel J. Egger,
Marc Ganzhorn,
Gian Salis,
Andreas Fuhrer,
Peter Mueller,
Panagiotis Kl. Barkoutsos,
Nikolaj Moll,
Ivano Tavernelli,
Stefan Filipp
Abstract:
We investigate a non-adiabatic holonomic operation that enables us to entangle two fixed-frequency superconducting transmon qubits attached to a common bus resonator. Two coherent microwave tones are applied simultaneously to the two qubits and drive transitions between the first excited resonator state and the second excited state of each qubit. The cyclic evolution within this effective 3-level…
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We investigate a non-adiabatic holonomic operation that enables us to entangle two fixed-frequency superconducting transmon qubits attached to a common bus resonator. Two coherent microwave tones are applied simultaneously to the two qubits and drive transitions between the first excited resonator state and the second excited state of each qubit. The cyclic evolution within this effective 3-level $Λ$-system gives rise to a holonomic operation entangling the two qubits. Two-qubit states with 95\% fidelity, limited mainly by charge-noise of the current device, are created within $213~\rm{ns}$. This scheme is a step toward implementing a SWAP-type gate directly in an all-microwave controlled hardware platform. By extending the available set of two-qubit operations in the fixed-frequency qubit architecture, the proposed scheme may find applications in near-term quantum applications using variational algorithms to efficiently create problem-specific trial states.
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Submitted 13 April, 2018;
originally announced April 2018.
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Pulsed reset protocol for fixed-frequency superconducting qubits
Authors:
Daniel J. Egger,
Max Werninghaus,
Marc Ganzhorn,
Gian Salis,
Andreas Fuhrer,
Peter Mueller,
Stefan Filipp
Abstract:
Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of an experiment. Moreover, for error-correction schemes it is import to rapidly re-initialize ancilla parity-check qubits. We present a simple pulsed qubit reset…
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Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of an experiment. Moreover, for error-correction schemes it is import to rapidly re-initialize ancilla parity-check qubits. We present a simple pulsed qubit reset protocol based on a two-pulse sequence. A first pulse transfers the excited state population to a higher excited qubit state and a second pulse into a lossy environment provided by a low-Q transmission line resonator, which is also used for qubit readout. We show that the remaining excited state population can be suppressed to $2.2\pm0.8\%$ and utilize the pulsed reset protocol to carry out experiments at enhanced rates.
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Submitted 1 April, 2019; v1 submitted 25 February, 2018;
originally announced February 2018.
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Quantum optimization using variational algorithms on near-term quantum devices
Authors:
Nikolaj Moll,
Panagiotis Barkoutsos,
Lev S. Bishop,
Jerry M. Chow,
Andrew Cross,
Daniel J. Egger,
Stefan Filipp,
Andreas Fuhrer,
Jay M. Gambetta,
Marc Ganzhorn,
Abhinav Kandala,
Antonio Mezzacapo,
Peter Müller,
Walter Riess,
Gian Salis,
John Smolin,
Ivano Tavernelli,
Kristan Temme
Abstract:
Universal fault-tolerant quantum computers will require error-free execution of long sequences of quantum gate operations, which is expected to involve millions of physical qubits. Before the full power of such machines will be available, near-term quantum devices will provide several hundred qubits and limited error correction. Still, there is a realistic prospect to run useful algorithms within…
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Universal fault-tolerant quantum computers will require error-free execution of long sequences of quantum gate operations, which is expected to involve millions of physical qubits. Before the full power of such machines will be available, near-term quantum devices will provide several hundred qubits and limited error correction. Still, there is a realistic prospect to run useful algorithms within the limited circuit depth of such devices. Particularly promising are optimization algorithms that follow a hybrid approach: the aim is to steer a highly entangled state on a quantum system to a target state that minimizes a cost function via variation of some gate parameters. This variational approach can be used both for classical optimization problems as well as for problems in quantum chemistry. The challenge is to converge to the target state given the limited coherence time and connectivity of the qubits. In this context, the quantum volume as a metric to compare the power of near-term quantum devices is discussed.
With focus on chemistry applications, a general description of variational algorithms is provided and the map** from fermions to qubits is explained. Coupled-cluster and heuristic trial wave-functions are considered for efficiently finding molecular ground states. Furthermore, simple error-mitigation schemes are introduced that could improve the accuracy of determining ground-state energies. Advancing these techniques may lead to near-term demonstrations of useful quantum computation with systems containing several hundred qubits.
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Submitted 9 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
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Analysis of parametrically driven exchange-type (iSWAP) and two-photon (bSWAP) interactions between superconducting qubits
Authors:
Marco Roth,
Marc Ganzhorn,
Nikolaj Moll,
Stefan Filipp,
Gian Salis,
Sebastian Schmidt
Abstract:
A current bottleneck for quantum computation is the realization of high-fidelity two-qubit quantum operations between two and more quantum bits in arrays of coupled qubits. Gates based on parametrically driven tunable couplers offer a convenient method to entangle multiple qubits by selectively activating different interaction terms in the effective Hamiltonian. Here, we study theoretically and ex…
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A current bottleneck for quantum computation is the realization of high-fidelity two-qubit quantum operations between two and more quantum bits in arrays of coupled qubits. Gates based on parametrically driven tunable couplers offer a convenient method to entangle multiple qubits by selectively activating different interaction terms in the effective Hamiltonian. Here, we study theoretically and experimentally a superconducting qubit setup with two transmon qubits connected via a capacitively coupled tunable bus. We develop a time-dependent Schrieffer-Wolff transformation and derive analytic expressions for exchange-interaction gates swap** excitations between the qubits (iSWAP) and for two-photon gates creating and annihilating simultaneous two-qubit excitations (bSWAP). We find that the bSWAP gate is generally slower than the more commonly used iSWAP gate, but features favorable scalability properties with less severe frequency crowding effects, which typically degrade the fidelity in multi-qubit setups. Our theoretical results are backed by experimental measurements as well as exact numerical simulations including the effects of higher transmon levels and dissipation.
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Submitted 7 August, 2017;
originally announced August 2017.
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Characterization of spin-orbit fields in InGaAs quantum wells
Authors:
T. Henn,
L. Czornomaz,
G. Salis
Abstract:
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is mea…
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Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the SOI is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients $α$ of 2$\times$10$^{-12}$ eVm is estimated.
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Submitted 19 September, 2016;
originally announced September 2016.
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Spin drift and diffusion in one- and two-subband helical systems
Authors:
Gerson J. Ferreira,
Felix G. G. Hernandez,
Patrick Altmann,
Gian Salis
Abstract:
The theory of spin drift and diffusion in two-dimensional electron gases is developed in terms of a random walk model incorporating Rashba, linear and cubic Dresselhaus, and intersubband spin-orbit couplings. The additional subband degree of freedom introduces new characteristics to the persistent spin helix (PSH) dynamics. As has been described before, for negligible intersubband scattering rates…
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The theory of spin drift and diffusion in two-dimensional electron gases is developed in terms of a random walk model incorporating Rashba, linear and cubic Dresselhaus, and intersubband spin-orbit couplings. The additional subband degree of freedom introduces new characteristics to the persistent spin helix (PSH) dynamics. As has been described before, for negligible intersubband scattering rates, the sum of the magnetization of independent subbands leads to a checkerboard pattern of crossed PSHs with long spin lifetime. For strong intersubband scattering we model the fast subband dynamics as a new random variable, yielding a dynamics set by averaged spin-orbit couplings of both subbands. In this case the crossed PSH becomes isotropic, rendering circular (Bessel) patterns with short spin lifetime. Additionally, a finite drift velocity breaks the symmetry between parallel and transverse directions, distorting and dragging the patterns. We find that the maximum spin lifetime shifts away from the PSH regime with increasing drift velocity. We present approximate analytical solutions for these cases and define their domain of validity. Effects of magnetic fields and initial package broadening are also discussed.
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Submitted 16 March, 2017; v1 submitted 18 August, 2016;
originally announced August 2016.
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Current-controlled Spin Precession of Quasi-Stationary Electrons in a Cubic Spin-Orbit Field
Authors:
P. Altmann,
F. G. G. Hernandez,
G. J. Ferreira,
M. Kohda,
C. Reichl,
W. Wegscheider,
G. Salis
Abstract:
Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which dri…
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Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which drift leads to a spin precession angle twice that of spins that diffuse the same distance.
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Submitted 10 May, 2016; v1 submitted 16 February, 2016;
originally announced February 2016.
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Transition of a 2D spin mode to a helical state by lateral confinement
Authors:
P. Altmann,
M. Kohda,
C. Reichl,
W. Wegscheider,
G. Salis
Abstract:
Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron travels to that position. In the transition to a 1D system with increasing lateral confinement, the spin orientation becomes more and more independent on the tra…
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Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron travels to that position. In the transition to a 1D system with increasing lateral confinement, the spin orientation becomes more and more independent on the trajectory. It is predicted that a long-lived helical spin mode emerges. Here we visualize this transition experimentally in a GaAs quantum-well structure with isotropic SOI. Spatially resolved measurements show the formation of a helical mode already for non-quantized and non-ballistic channels. We find a spin-lifetime enhancement that is in excellent agreement with theoretical predictions. Lateral confinement of a 2D electron gas provides an easy-to-implement technique for achieving high spin lifetimes in the presence of strong SOI for a wide range of material systems.
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Submitted 27 July, 2015;
originally announced July 2015.
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Suppressed decay of a laterally confined persistent spin helix
Authors:
P. Altmann,
M. P. Walser,
C. Reichl,
W. Wegscheider,
G. Salis
Abstract:
We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few nanoseconds after locally injecting spin polarization into the wire, the polarization is strongly enhanced as compared to the two-dimensional case. This is mostl…
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We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few nanoseconds after locally injecting spin polarization into the wire, the polarization is strongly enhanced as compared to the two-dimensional case. This is mostly attributed to a transition to one-dimensional diffusion, strongly suppressing diffusive dilution of spin polarization. The intrinsic lifetime of the helical mode is only weakly increased, which indicates that the channel confinement can only partially suppress the cubic Dresselhaus spin-orbit interaction.
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Submitted 6 October, 2014;
originally announced October 2014.
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Dynamics of a localized spin excitation close to the spin-helix regime
Authors:
G. Salis,
M. P. Walser,
P. Altmann,
C. Reichl,
W. Wegscheider
Abstract:
The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and f…
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The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value $q_0$ of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width $w$ of the spin excitation reduces the spin polarization by a factor that approaches $\exp(-q_0^2 w^2/2)$ at longer times.
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Submitted 19 December, 2013;
originally announced December 2013.
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Direct map** of the formation of a persistent spin helix: Supplementary information
Authors:
M. P. Walser,
C. Reichl,
W. Wegscheider,
G. Salis
Abstract:
The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the…
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The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the diffusive evolution of a local spin excitation into a helical spin mode by a time- and spatially resolved magneto-optical Kerr rotation technique. Depending on its in-plane direction, an external magnetic field interacts differently with the spin mode and either highlights its helical nature or destroys the SU(2) symmetry of the SOI and thus decreases the spin lifetime. All relevant SOI parameters are experimentally determined and confirmed with a numerical simulation of spin diffusion in the presence of SOI.
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Submitted 21 September, 2012;
originally announced September 2012.
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Breakdown of the Korringa Law of Nuclear Spin Relaxation in Metallic GaAs
Authors:
D. Kölbl,
D. M. Zumbühl,
A. Fuhrer,
G. Salis,
S. F. Alvarado
Abstract:
We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1…
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We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1 ~ T^0.6 for 0.1 K < T < 10 K. Further, we investigate nuclear spin inhomogeneities.
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Submitted 22 May, 2012; v1 submitted 21 May, 2012;
originally announced May 2012.
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The Nuclear Spin Environment in Lateral GaAs Spin Valves
Authors:
D. Kölbl,
D. M. Zumbühl,
A. Fuhrer,
G. Salis,
S. F. Alvarado
Abstract:
The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the…
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The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization.
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Submitted 1 October, 2011; v1 submitted 28 September, 2011;
originally announced September 2011.
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Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions
Authors:
G. Salis,
S. F. Alvarado,
A. Fuhrer
Abstract:
Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are ve…
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Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are very similar, but shifted in energy, for Co70Fe30 and for Fe contacts. An increase of the spin-injection efficiency and a shift of the spectrum correlate with the Ga-to-As ratio at the interface between CoFe and GaAs.
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Submitted 5 May, 2011;
originally announced May 2011.
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Optical polarization of localized hole spins in p-doped quantum wells
Authors:
M. Studer,
M. Hirmer,
D. Schuh,
W. Wegscheider,
K. Ensslin,
G. Salis
Abstract:
The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with…
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The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.
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Submitted 6 April, 2011;
originally announced April 2011.
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Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas
Authors:
M. Studer,
M. P. Walser,
S. Baer,
H. Rusterholz,
S. Schön,
D. Schuh,
W. Wegscheider,
K. Ensslin,
G. Salis
Abstract:
The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus S…
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The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus SOI is important. We relate the measured splitting to the Dresselhaus coupling parameter, the QW confinement, the Fermi wavenumber and to strain effects. From this, the coupling parameter is determined quantitatively, including its sign.
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Submitted 22 December, 2010; v1 submitted 28 September, 2010;
originally announced September 2010.
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Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device
Authors:
G. Salis,
A. Fuhrer,
R. R. Schlittler,
L. Gross,
S. F. Alvarado
Abstract:
The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also incre…
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The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection.
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Submitted 7 April, 2010;
originally announced April 2010.
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Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices
Authors:
G. Salis,
A. Fuhrer,
S. F. Alvarado
Abstract:
The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in…
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The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.
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Submitted 3 August, 2009;
originally announced August 2009.
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Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
Authors:
M. Studer,
G. Salis,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute v…
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We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute values and signs of the two components and show that for zero Rashba spin splitting the anisotropy of the spin-dephasing rate vanishes.
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Submitted 14 July, 2009; v1 submitted 5 March, 2009;
originally announced March 2009.
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Spin-orbit interaction and spin relaxation in a two-dimensional electron gas
Authors:
M. Studer,
S. Schön,
K. Ensslin,
G. Salis
Abstract:
Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are determined as a function of temperature between 10 and 80 K. By comparing the relative size of these terms with a measured in-plane anisotropy of the spin deph…
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Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are determined as a function of temperature between 10 and 80 K. By comparing the relative size of these terms with a measured in-plane anisotropy of the spin dephasing rate, the D'yakonv-Perel' contribution to spin dephasing is estimated. The measured dephasing rate is significantly larger than this, which can only partially be explained by an inhomogeneous g-factor.
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Submitted 6 January, 2009; v1 submitted 17 September, 2008;
originally announced September 2008.
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Two-dimensional imaging of the spin-orbit effective magnetic field
Authors:
L. Meier,
G. Salis,
E. Gini,
I. Shorubalko,
K. Ensslin
Abstract:
We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these…
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We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these fields onto an external magnetic field is monitored locally by measuring the electron spin-precession frequency using time-resolved Faraday rotation. A comparison with simulations shows good agreement with the experimental data.
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Submitted 7 December, 2007;
originally announced December 2007.
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Measurement of Rashba and Dresselhaus spin-orbit magnetic fields
Authors:
Lorenz Meier,
Gian Salis,
Ivan Shorubalko,
Emilio Gini,
Silke Schoen,
Klaus Ensslin
Abstract:
Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields or…
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Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields originate from bulk or structure inversion asymmetry, respectively. Yet, it remains a challenge to determine the absolute value of both contributions in a single sample. Here we show that both fields can be measured by optically monitoring the angular dependence of the electrons' spin precession on their direction of movement with respect to the crystal lattice. Furthermore, we demonstrate spin resonance induced by the spin-orbit fields. We apply our method to GaAs/InGaAs quantum-well electrons, but it can be used universally to characterise spin-orbit interactions in semiconductors, facilitating the design of spintronic devices.
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Submitted 16 September, 2007;
originally announced September 2007.
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Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates
Authors:
L. Meier,
G. Salis,
N. Moll,
C. Ellenberger,
I. Shorubalko,
U. Wahlen,
K. Ensslin,
E. Gini
Abstract:
The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In li…
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The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.
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Submitted 13 September, 2007;
originally announced September 2007.
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Gate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating
Authors:
L. Meier,
G. Salis,
C. Ellenberger,
E. Gini,
K. Ensslin
Abstract:
Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate pot…
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Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate potential with a gigahertz frequency allows the electron spin precession to be controlled on a nanosecond timescale.
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Submitted 21 December, 2006;
originally announced December 2006.
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Interferometric detection of spin-polarized transport in the depletion layer of a metal-GaAs Schottky barrier
Authors:
G. Salis,
S. F. Alvarado
Abstract:
It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of n-doped GaAs displays fast oscillations that originate from an interference between the light reflected from the semiconductor surface and from the front of the ele…
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It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of n-doped GaAs displays fast oscillations that originate from an interference between the light reflected from the semiconductor surface and from the front of the electron distribution moving into the semiconductor. Using this effect, the dynamics of the photogenerated charge carriers in the depletion layer of the biased Schottky barrier is measured.
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Submitted 23 March, 2006;
originally announced March 2006.
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Stray-field-induced modification of coherent spin dynamics
Authors:
L. Meier,
G. Salis,
C. Ellenberger,
E. Gini,
K. Ensslin
Abstract:
Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession…
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Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous field below the Fe stripes is measured for varying magnetic fields. Comparing with reference stripes made of Au, we find an enhancement of the spin precession frequency proportional to the Fe magnetization, in line with a decrease of the spin decay time, which is attributed to the inhomogeneous magnetic stray-field in the quantum well layer.
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Submitted 10 March, 2006;
originally announced March 2006.
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Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells
Authors:
G. Salis,
D. D. Awschalom,
Y. Ohno,
H. Ohno
Abstract:
Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic resonance. All components of the g-tensor are measured, and a strong anisotropy even along the in-plane directions is found. The amplitudes of the spin signal…
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Time-resolved optical measurements of electron-spin dynamics in a (110) GaAs quantum well are used to study the consequences of a strongly anisotropic electron g-tensor, and the origin of previously discovered all-optical nuclear magnetic resonance. All components of the g-tensor are measured, and a strong anisotropy even along the in-plane directions is found. The amplitudes of the spin signal allow the study of the spatial directions of the injected spin and its precession axis. Surprisingly efficient dynamic nuclear polarization in a geometry where the electron spins are injected almost transverse to the applied magnetic field is attributed to an enhanced non-precessing electron spin component. The small absolute value of the electron g-factor combined with efficient nuclear spin polarization leads to large nuclear fields that dominate electron spin precession at low temperatures. These effects allow for sensitive detection of all-optical nuclear magnetic resonance induced by periodically excited quantum-well electrons. The mechanism of previously observed Delta m = 2 transitions is investigated and found to be attributable to electric quadrupole coupling, whereas Delta m = 1 transitions show signatures of both quadrupole and electron-spin induced magnetic dipole coupling.
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Submitted 28 April, 2001;
originally announced April 2001.
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Optical manipulation of nuclear spin by a two-dimensional electron gas
Authors:
G. Salis,
D. T. Fuchs,
J. M. Kikkawa,
D. D. Awschalom,
Y. Ohno,
H. Ohno
Abstract:
Conduction electrons are used to optically polarize, detect and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spi…
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Conduction electrons are used to optically polarize, detect and manipulate nuclear spin in a (110) GaAs quantum well. Using optical Larmor magnetometry, we find that nuclear spin can be polarized along or against the applied magnetic field, depending on field polarity and tilting of the sample with respect to the optical pump beam. Periodic optical excitation of the quantum-confined electron spin reveals a complete spectrum of optically-induced and quadrupolar-split nuclear resonances, as well as evidence for delta m = 2 transitions.
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Submitted 9 October, 2000;
originally announced October 2000.
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Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space
Authors:
T. Heinzel,
G. Salis,
R. Held,
S. Luescher,
K. Ensslin,
W. Wegscheider,
M. Bichler
Abstract:
A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or l…
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A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one.
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Submitted 23 September, 1999;
originally announced September 1999.
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Mode Spectroscopy and Level Coupling in Ballistic Electron Waveguides
Authors:
G. Salis,
T. Heinzel,
K. Ensslin,
O. J. Homan,
W. Bachtold,
K. Maranowski,
A. C. Gossard
Abstract:
A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A magnetic field applied along the direction of the current flow couples the modes. This can be described by an extension of the Darwin-Fock model. Anticrossings are…
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A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A magnetic field applied along the direction of the current flow couples the modes. This can be described by an extension of the Darwin-Fock model. Anticrossings are observed as a function of the magnetic field, but not for zero field or perpendicular field directions, indicating coupling of the subbands due to nonparabolicity in the electrical confinement.
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Submitted 9 February, 1999;
originally announced February 1999.
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Variation of elastic scattering across a quantum well
Authors:
G. Salis,
P. Wirth,
T. Heinzel,
T. Ihn,
K. Ensslin,
K. Maranwoski,
A. C. Gossard
Abstract:
The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By com…
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The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By comparing the measurements with calculations of the scattering times of a two-subband system, new information on the location of the relevant scatterers and the anisotropy of intersubband scattering is obtained. It is found that the scattering time of electrons in the lower subband depends sensitively on the position of the scatterers, which also explains the measured dependence of the scattering on the carrier density. The measurements indicate segregation of scatterers from the substrate side towards the quantum well during growth.
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Submitted 17 December, 1998;
originally announced December 1998.