Showing 1–19 of 19 results for author: Salamo, G

Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition

Authors: Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldose, **-Hee Bae, Omar Concepcion, Xiaochen **, Shunda Chen, Ilias Bikmukhametov, Austin Akey, Cory T. Cline, Alejandra Cuervo Covian, Xiaoxin Wang, Tianshu Li, Yu** Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Shengbai Zhang, Jifeng Liu

Abstract: Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom pr… ▽ More Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference for Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed in MBE GeSn than CVD GeSn for both thin film and quantum well samples with Sn composition ranging from 7 to 20%. Interestingly, samples grown by different deposition tools under the same method (either MBE or CVD) showed remarkable consistency in Sn-Sn 1NN SRO, while MBE vs. CVD showed clear differences. Supported by theoretical modeling, we consider that this difference in SRO originates from the impact of surface termination, where MBE surfaces are exposed to ultrahigh vacuum while CVD surfaces are terminated by H to a good extent. This finding not only suggests engineering surface termination or surfactants during the growth as a potential approach to control SRO in GeSn, but also provides insight into the underlying reasons for very different growth temperature between MBE and CVD that directly impact the strain relaxation behavior. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors

Authors: Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis, Kanika Arora, Avidesh Maharaj, Gottfried Strasser, Aaron Maxwell Andrews, Helmut Koeck, Alan Mantooth, Gregory Salamo, Debbie G Senesky

Abstract: This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors. This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors. △ Less

Submitted 17 February, 2024; originally announced February 2024.

Comments: 4 pages

Algorithm based linearly graded compositions of GeSn on GaAs (001) via molecular beam epitaxy

Authors: Calbi Gunder, Mohammad Zamani Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo

Abstract: The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up… ▽ More The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up to 10 % before partial relaxation of the structure and a continued gradient to 16 % GeSn. Using algorithmic-based control and calibration, the ability to consistently and easily grow GeSn compositions above 20 % will likely become very possible. In this report, we use X-ray diffraction, simulation and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first demonstration of algorithmically driven linearly graded high-quality GeSn films in the world. △ Less

Submitted 18 November, 2023; v1 submitted 12 September, 2023; originally announced September 2023.

Comments: This paper and the two before it are drafts

Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields

Authors: V. Laurindo Jr., E. D. Guarin Castro, G. M. Jacobsen, E. R. C. de Oliveira, J. F. M. Domenegueti, B. Alén, Yu. I. Mazur, G. J. Salamo, G. E. Marques, E. Marega Jr., M. D. Teodoro, V. Lopez-Richard

Abstract: This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms.… ▽ More This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at lattice temperatures between 4 K and 50 K, the scattering with acoustic phonons and short-range interactions appear as the main decoherence mechanisms. Statistical fluctuations of the band-gap however become also relevant in this regime and we were able to deconvolute them from the decoherence contributions. The circularly polarized magneto-photoluminescence unveils a non-monotonic tuning of the coherence for one of the spin components at low magnetic fields. This effect has been ascribed to the competition between short-range interactions and spin-flip scattering, modulated by the momentum relaxation time. △ Less

Submitted 4 January, 2022; v1 submitted 5 July, 2021; originally announced July 2021.

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

Authors: Yiyin Zhou, Solomon Ojo, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu

Abstract: GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses an… ▽ More GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Comments: 21 pages, 5 figures, and 2 tables

Electrically injected GeSn lasers on Si operating up to 100 K

Authors: Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy, Joshua M. Grant, Sylvester Amoah, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu

Abstract: The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si.… ▽ More The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K. △ Less

Submitted 20 April, 2020; originally announced April 2020.

Magnetically controlled exciton transfer in hybrid quantum dot-quantum well nanostructures

Authors: V. Laurindo Jr., Yu. I. Mazur, E. R. Cardozo de Oliveira, B. Alén, M. E. Ware, E. Marega Jr., Z. Ya. Zhuchenko, G. G. Tarasov, G. E. Marques, M. D. Teodoro, G. J. Salamo

Abstract: A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in… ▽ More A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at strong magnetic field and excitation density. For the case of a thin barrier the QW PL intensity is observed to increase at the expense of a decrease in the QD PL intensity. This is attributed to changes in the interplane carrier dynamics in the QW and the wetting layer (WL) resulting from increasing the magnetic field along with changes in the coupling between QD excited states and exciton states in the QW and the WL. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. B 100, 035309 (2019)

Exfoliation energy, quasi-particle bandstructure, and excitonic properties of selenium and tellurium atomic chains

Authors: Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo, Shui-Qing Yu, Hugh O. H. Churchill, Salvador Barraza-Lopez

Abstract: Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties… ▽ More Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties of reduced-dimensional and weakly-bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with non-empirical van der Waals corrections, and their electronic and optical properties with the GW and Bethe-Salpeter formalisms. The exfoliation energy is found to be within 0.547 to 0.719 eV/u.c. for the selenium atomic chain, and 0.737 to 0.926 eV/u.c. for the tellurium atomic chain (u.c. stands for unit cell), depending on the approximation for the van der Waals interaction and the numerical tool chosen. The GW electronic bandgap turned out to be 5.22--5.47 (4.44--4.59) eV for the Se (Te) atomic chains, with the lowest bound obtained with the Godby-Needs (GB), and the upper bound to the Hybertsen-Louie (HL) plasmon-pole models (PPMs). The binding energy of the ground-state excitonic state ranges between 2.69 to 2.72 eV for selenium chains within the HL and GB PPM, respectively, and turned out to be 2.35 eV for tellurium chains with both approximations. The ground state excitonic wave function is localized within 50 Å along the axis for both types of atomic chains, and its energy lies within the visible spectrum: blue [2.50(GN)--2.78(HL) eV] for selenium, and yellow--green [2.09(GN)--2.28(HL) eV] for tellurium, which could be useful for LED applications in the visible spectrum. △ Less

Submitted 3 July, 2018; v1 submitted 13 September, 2017; originally announced September 2017.

Comments: 8 pages, 7 figures. Accepted at PRB on 7/2/2018

Journal ref: Phys. Rev. B 98, 035420 (2018)

Observation of Nondegenerate Two-Photon Gain in GaAs

Authors: Matthew Reichert, Arthur L. Smirl, Greg Salamo, David J. Hagan, Eric W. Van Stryland

Abstract: Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe meas… ▽ More Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe measurements. 2PG is isolated from other pump induced effects through the difference between measurements performed with parallel and perpendicular polarizations of pump and probe. An enhancement in the 2PG coefficient of nearly two orders-of-magnitude is reported. The results point a possible way toward two-photon semiconductor lasers. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Comments: 5 pages, 5 figures

Probing InAs quantum dot states with surface plasmon polaritons

Authors: Fernando W. de Alencar Sobreira, Yuriy I. Mazur, Xian Hu, Gregory J. Salamo, Euclydes Marega Jr

Abstract: When placed near a thin metallic film, excitons in a quantum dot (QD) decay into surface plasmon polaritons (SPPs), guided modes of light confined at the interface of the metal/dielectric. It was reported that the interaction of SPPs with excitons in a QD may give rise to a modification in the photoluminescence (PL) spectra of the exciton energy levels, however the mechanism that explains this mod… ▽ More When placed near a thin metallic film, excitons in a quantum dot (QD) decay into surface plasmon polaritons (SPPs), guided modes of light confined at the interface of the metal/dielectric. It was reported that the interaction of SPPs with excitons in a QD may give rise to a modification in the photoluminescence (PL) spectra of the exciton energy levels, however the mechanism that explains this modification remains unclear. We propose a new methodology to excite many energy levels in an exciton by placing the QDs near a metallic array of slits fabricated onto a thin metallic gold (Au) film. By changing the position under the array where the QDs are excited we can resolve between the many energy levels. The unique features of the PL spectra obtained are the result of the strong electromagnetic field (EMF), the increase in the local density of states (LDOS) and the mesoscopic effects attributed to the gradient of the SPP field near the QDs. △ Less

Submitted 12 November, 2015; originally announced November 2015.

Advanced holographic nondestructive testing system for residual stress analysis

Authors: Anatoli Kniazkov, Yuri Onischenko, George Dovgalenko, Gregory Salamo, Tatiana Latychevskaia

Abstract: The design and operating of a portable holographic interferometer for residual stress analysis by creating a small scratch along with a new mathematical algorithm of calculations are discussed. Preliminary data of the stress investigations on aluminum and steel alloys have been obtained by the automatic processing of the interference pattern using a notebook computer. A phase-shift compensation te… ▽ More The design and operating of a portable holographic interferometer for residual stress analysis by creating a small scratch along with a new mathematical algorithm of calculations are discussed. Preliminary data of the stress investigations on aluminum and steel alloys have been obtained by the automatic processing of the interference pattern using a notebook computer. A phase-shift compensation technique in real-time reflection interferometry is used to measure the out-of-plane stress release surface displacement surrounding a small scratch (25 um depth and 0.5 mm width) in a plate with residual stress of around 50 MPa. Comparison between theoretical models for a rectangular and triangular shaped scratch with the experimental data are presented. △ Less

Submitted 10 April, 2013; originally announced April 2013.

Comments: 11 pages, 9 figures

Journal ref: Proceedings of SPIE 3687 (1999), pages 73-81

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Authors: Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Zhiming M. Wang, Jian Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, Gregory J. Salamo

Abstract: High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is… ▽ More High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices. △ Less

Submitted 11 March, 2013; v1 submitted 2 January, 2013; originally announced January 2013.

Comments: 16 pages, 9 figure, 2 tables

Journal ref: AIP Advances 3, 072112 (2013)

Coulomb interaction signatures in self-assembled lateral quantum dot molecules

Authors: Xinran. Zhou, Jihoon. Lee, Gregory. J. Salamo, Miquel. Royo, Juan. I. Climente, Matthew. F. Doty

Abstract: We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge… ▽ More We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the quantum dot molecule. Using a combination of computational modeling and experimental analysis, we assign the observed discrete spectral lines to specific charge distributions. We explain the dynamic processes that lead to these charge configurations through electrical injection and optical generation. Our systemic analysis provides evidence of inter-dot tunneling of electrons as predicted in previous theoretical work. △ Less

Submitted 30 November, 2012; originally announced December 2012.

Comments: 9 pages, 4 figures

Spectroscopic signatures of many-body interactions and delocalized states in self-assembled lateral quantum dot molecules

Authors: X. Zhou, S. Sanwlani, W. Liu, J. H. Lee, Zh. M. Wang, G. Salamo, M. F. Doty

Abstract: Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the small spacing between the quantum dots is expected to lead to the formation of molecular-like delocalized states. We present optical spectroscopy of ens… ▽ More Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the small spacing between the quantum dots is expected to lead to the formation of molecular-like delocalized states. We present optical spectroscopy of ensembles and individual lateral quantum dot molecules as a function of electric fields applied along the growth direction. The results allow us to characterize the energy level structure of lateral quantum dot molecules and the spectral signatures of both charging and many-body interactions. We present experimental evidence for the existence of molecular-like delocalized states for electrons in the first excited energy shell. △ Less

Submitted 21 September, 2011; originally announced September 2011.

Comments: 9 pages, 5 figures

Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields

Authors: M. D. Teodoro, V. L. Campo Jr., V. Lopez-Richard, E. Marega Jr., G. E. Marques, Y. Galvao-Gobato, F. Iikawa, M. J. S. P. Brasil, Z. Y. AbuWaar, V. G. Dorogan, Yu. I. Mazur, M. Benamara, G. J. Salamo

Abstract: We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric… ▽ More We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric fields. △ Less

Submitted 3 August, 2009; originally announced August 2009.

Comments: 6 pages, 7 figures

Assessment method for photo-induced waveguides

Authors: M. Chauvet, G. Fu, G. Salamo

Abstract: A method to probe the guiding characteristics of waveguides formed in real-time is proposed and evaluated. It is based on the analysis of the time dependent light distribution observed at the exit face of the waveguide while progressively altering its index profile and probed by a large diameter optical beam. A beam propagation method is used to model the observed dynamics. The technique is appl… ▽ More A method to probe the guiding characteristics of waveguides formed in real-time is proposed and evaluated. It is based on the analysis of the time dependent light distribution observed at the exit face of the waveguide while progressively altering its index profile and probed by a large diameter optical beam. A beam propagation method is used to model the observed dynamics. The technique is applied to retrieve the properties of soliton-induced waveguides. △ Less

Submitted 15 September, 2007; originally announced September 2007.

Journal ref: Optics express 14, 22 (2006) 10726-10732

Coherently driven non-classical light emission from a quantum dot

Authors: A. Muller, E. B. Flagg, P. Bianucci, D. G. Deppe, W. Ma, J. Zhang, G. J. Salamo, C. K. Shih

Abstract: Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have relied on incoherent pum**, which limits the desirable properties of the emission. In contrast, coherent excitation was recognized to be necessary fo… ▽ More Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have relied on incoherent pum**, which limits the desirable properties of the emission. In contrast, coherent excitation was recognized to be necessary for providing both improved photon indistinguishability and high efficiency, and offers the quantum control capabilities required for basic qubit manipulations. Here we achieve, for the first time, resonant and coherent excitation of a quantum dot with simultaneous collection of the non-classical photon emission. Second-order correlation measurements show the unique signature of a coherently-driven two-level quantum emitter: the photon statistics become oscillatory at high driving fields, reflecting the coherent evolution of the excitonic ground state of the quantum dot. △ Less

Submitted 25 July, 2007; originally announced July 2007.

Comments: 12 pages, 5 figures, submitted to Nature Photonics

Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity

Authors: Andreas Muller, Edward B. Flagg, Pablo Bianucci, Xiaoyong Wang, Dennis G. Deppe, Wenquan Ma, Jiayu Zhang, Min Xiao, Gregory J. Salamo, Chih-Kang Shih

Abstract: We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emerg… ▽ More We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emergence of oscillations in the first-order correlation function of the fluorescence, g(t), as measured by interferometry. The measurements correspond to a Mollow triplet with a Rabi splitting of up to 13.3 micro eV. Second-order-correlation measurements further confirm non-classical light emission. △ Less

Submitted 4 July, 2007; originally announced July 2007.

Comments: 5 pages, 4 figures

Domain evolution of BaTiO3 ultrathin films under electric field: a first-principles study

Authors: Bo-Kuai Lai, Inna Ponomareva, Igor A. Kornev, L. Bellaiche, G. J. Salamo

Abstract: A first-principles-derived method is used to study the morphology and electric-field-induced evolution of stripe nanodomains in (001) BaTiO3 (BTO) ultrathin films, and to compare them with those in (001) Pb(Zr,Ti)O3 (PZT) ultrathin films. The BaTiO3 systems exhibit 180o periodic stripe domains at null electric field, as in PZT ultrathin films. However, the stripes alternate along [1-10] in BTO s… ▽ More A first-principles-derived method is used to study the morphology and electric-field-induced evolution of stripe nanodomains in (001) BaTiO3 (BTO) ultrathin films, and to compare them with those in (001) Pb(Zr,Ti)O3 (PZT) ultrathin films. The BaTiO3 systems exhibit 180o periodic stripe domains at null electric field, as in PZT ultrathin films. However, the stripes alternate along [1-10] in BTO systems versus [010] in PZT systems, and no in-plane surface dipoles occur in BTO ultrathin films (unlike in PZT materials). Moreover, the evolution of the 180o stripe domains in the BaTiO3 systems, when applying and increasing an electric field along [001], involves four regions: Region I for which the magnitude of the down dipoles (i.e., those that are antiparallel to the electric field) is reduced, while the domain walls do not move; Region II in which some local down dipoles adjacent to domain walls switch their direction, resulting in zigzagged domain walls - with the overall stripe periodicity being unchanged; Region III in which nanobubbles are created, then contract along [110] and finally collapse; and Region IV which is associated with a single monodomain. Such evolution differs from that of PZT ultrathin films for which neither Region I nor zigzagged domain walls exist, and for which the bubbles contract along [100]. Discussion about such differences is provided. △ Less

Submitted 24 October, 2006; originally announced October 2006.

Comments: 19 pages, 4 figures, 27 references, submitted to Phys. Rev. B