-
Purcell-Enhanced Single Photons at Telecom Wavelengths from a Quantum Dot in a Photonic Crystal Cavity
Authors:
Catherine L. Phillips,
Alistair J. Brash,
Max Godsland,
Nicholas J. Martin,
Andrew Foster,
Anna Tomlinson,
Rene Dost,
Nasser Babazadeh,
Elisa M. Sala,
Luke Wilson,
Jon Heffernan,
Maurice S. Skolnick,
A. Mark Fox
Abstract:
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focus…
▽ More
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from a Purcell factor of 5, owing to interaction of the QD within a low-mode-volume photonic crystal cavity. Through in-situ control of the sample temperature, we show both temperature tuning of the QD's emission wavelength and a preserved single photon emission purity at temperatures up to 25K. These findings suggest the viability of QD-based, cryogen-free, C-band single photon sources, supporting applicability in quantum communication technologies.
△ Less
Submitted 30 October, 2023;
originally announced October 2023.
-
Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb cap** layer for nanomemory applications
Authors:
Elisa Maddalena Sala,
Petr Klenovský
Abstract:
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb cap** layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe that the quantum dot emission shows anomalous temperature dependence,~i.e., increase of energy with temperature increase from 10~K to $\sim$70~K, followed by ene…
▽ More
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb cap** layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe that the quantum dot emission shows anomalous temperature dependence,~i.e., increase of energy with temperature increase from 10~K to $\sim$70~K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band ${\bf k}\cdot{\bf p}$ theory with multiparticle corrections calculated using the configuration interaction method, we explain the anomalous temperature dependence as mixing of momentum direct and indirect exciton states. We also find that the ${\bf k}$-indirect electron-hole transition in type-I regime at temperatures $<70$~K is optically more intense than ${\bf k}$-direct. Furthermore, we identify a band alignment change from type-I to type-II for QDs overgrown by more than one monolayer of GaSb. Finally, we predict the retention time of (In,Ga)(As,Sb)/GaAs/AlP/GaP quantum dots capped with GaSb layers with varying thickness, for usage as storage units in the QD-Flash nanomemory concept and observe that by using only a 2~ML-thick GaSb cap** layer, the projected storage time surpasses the non-volatility limit of 10 years.
△ Less
Submitted 9 September, 2023; v1 submitted 5 May, 2023;
originally announced May 2023.
-
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
Dieter Bimberg,
Petr Klenovský
Abstract:
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implem…
▽ More
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb cap** layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pum** power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.
△ Less
Submitted 15 January, 2021;
originally announced January 2021.
-
Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
David Fuertes Marrón,
Dieter Bimberg,
Petr Klenovský
Abstract:
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their…
▽ More
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and cap** layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pum**, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pum**, which employs a numerical model based on a semi-self-consistent configuration interaction method.
△ Less
Submitted 10 September, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
