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Reaction energetics of Hydrogen on the Si(100) surface: A periodic many-electron theory study
Authors:
Theodoros Tsatsoulis,
Sung Sakong,
Axel Groß,
Andreas Grüneis
Abstract:
We report on a many-electron wavefunction theory study for the reaction energetics of hydrogen dissociation on the Si(100) surface. We demonstrate that quantum chemical wavefunction based methods using periodic boundary conditions can predict chemically accurate results for the activation barrier and the chemisorption energy in agreement with experimental findings. These highly accurate results fo…
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We report on a many-electron wavefunction theory study for the reaction energetics of hydrogen dissociation on the Si(100) surface. We demonstrate that quantum chemical wavefunction based methods using periodic boundary conditions can predict chemically accurate results for the activation barrier and the chemisorption energy in agreement with experimental findings. These highly accurate results for the reaction energetics enable a deeper understanding of the underlying physical mechanism and make it possible to benchmark widely used density functional theory methods.
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Submitted 18 September, 2018; v1 submitted 21 August, 2018;
originally announced August 2018.
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Comparison of density functionals for nitrogen impurities in ZnO
Authors:
Sung Sakong,
Johann Gutjahr,
Peter Kratzer
Abstract:
Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the…
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Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge transfer level of impurities in the wide-gap semiconductor ZnO. While the generalized gradient approximation fails to describe the electronic structure of the N impurity in ZnO correctly, methods that widen the band gap of ZnO by introducing additional non-local potentials yield the formation energy and charge transfer level of the impurity in reasonable agreement with hybrid functional calculations. Summarizing the results obtained with different methods, we corroborate earlier findings that the formation of substitutional N impurities at the oxygen site in ZnO from N atoms is most likely slightly endothermic under oxygen-rich preparation conditions, and introduces a deep level more than 1eV above the valence band edge of ZnO. Moreover, the comparison of methods elucidates subtle differences in the predicted electronic structure, e.g. concerning the orientation of unoccupied orbitals in the crystal field and the stability of the charged triplet state of the N impurity. Further experimental or theoretical analysis of these features could provide useful tests for validating the performance of DFT methods in their application to defects in wide-gap materials.
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Submitted 24 May, 2013;
originally announced May 2013.
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As vacancies, Ga antisites and Au impurities in Zincblende and Wurtzite GaAs nanowire segments from first principles
Authors:
Yaojun A. Du,
Sung Sakong,
Peter Kratzer
Abstract:
In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limite…
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In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for thin films or bulk GaAs, such as the co-existence of zincblende and wurtzite polytypes, the use of gold particles as catalyst, and the arsenic-limited growth regime. Hence, we carry out density-functional calculations for As vacancies, Ga_As antisites, and Au impurities in ZB and WZ GaAs crystals. Our results show that As vacancies can diffuse within in a ZB GaAs crystal with migration barriers of ~1.9 eV. Within WZ GaAs, As vacancy diffusion is found to be anisotropic, with low barriers of 1.60 up to 1.79 eV (depending on do** conditions) in the ab-plane, while there are higher barriers of 2.07 to 2.44 eV to diffuse along the c-axis. The formation energy of Au impurities is found to be generally much lower than those of arsenic vacancies or Ga_As antisites. Thus, Au impurities will be the dominant defects formed in Au-catalyzed nanowire growth. Moreover, we find that it is energetically more favorable by 1 to 2 eV for an Au impurity to replace a lattice Ga atom than a lattice As atom in GaAs. An Au substitutional defect for a lattice Ga atom in ZB GaAs is found to create a charge transfer level in the lower half of the band gap. While our calculations locate this level at E_v + 0.22eV, taking into account the inaccuracy of the density functional that ought to be corrected by a downshift of E_v by about 0.2eV results in good agreement with the experimental result of E_v + 0.4eV.
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Submitted 30 January, 2013;
originally announced January 2013.
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Anisotropic ferromagnetism in carbon doped zinc oxide from first-principles studies
Authors:
Sanjeev K. Nayak,
Markus E. Gruner,
Sung Sakong,
Shreekantha Sil,
Peter Kratzer,
Surjyo N. Behera,
Peter Entel
Abstract:
A density functional theory study of substitutional carbon impurities in ZnO has been performed, using both the generalized gradient approximation (GGA) and a hybrid functional (HSE06) as exchange-correlation functional. It is found that the non-spinpolarized C$_\mathrm{Zn}$ impurity is under almost all conditions thermodynamically more stable than the C$_\mathrm{O}$ impurity which has a magnetic…
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A density functional theory study of substitutional carbon impurities in ZnO has been performed, using both the generalized gradient approximation (GGA) and a hybrid functional (HSE06) as exchange-correlation functional. It is found that the non-spinpolarized C$_\mathrm{Zn}$ impurity is under almost all conditions thermodynamically more stable than the C$_\mathrm{O}$ impurity which has a magnetic moment of $2μ_{\mathrm{B}}$, with the exception of very O-poor and C-rich conditions. This explains the experimental difficulties in sample preparation in order to realize $d^{0}$-ferromagnetism in C-doped ZnO. From GGA calculations with large 96-atom supercells, we conclude that two C$_\mathrm{O}$-C$_\mathrm{O}$ impurities in ZnO interact ferromagnetically, but the interaction is found to be short-ranged and anisotropic, much stronger within the hexagonal $ab$-plane of wurtzite ZnO than along the c-axis. This layered ferromagnetism is attributed to the anisotropy of the dispersion of carbon impurity bands near the Fermi level for C$_{\mathrm{O}}$ impurities in ZnO. From the calculated results, we derive that a C$_{\mathrm{O}}$ concentration between 2% and 6% should be optimal to achieve $d^{0}$-ferromagnetism in C-doped ZnO.
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Submitted 25 May, 2012;
originally announced May 2012.
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Magnetism in C or N-doped MgO and ZnO: density-functional study of impurity pairs
Authors:
Hua Wu,
Alessandro Stroppa,
Sung Sakong,
Silvia Picozzi,
Matthias Scheffler,
Peter Kratzer
Abstract:
It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the…
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It is shown that substitution of C or N for O recently proposed as a way to create ferromagnetism in otherwise nonmagnetic oxide insulators is curtailed by formation of impurity pairs, and the resultant C2 spin=1 dimers as well as the isoelectronic N2^{2+} interact antiferromagneticallly in p-type MgO. For C-doped ZnO, however, we demonstrate using the HSE hybrid functional that a resonance of the spin-polarized C2 ppπ* states with the host conduction band results in a long-range ferromagnetic interaction. Magnetism of open-shell impurity molecules is proposed as a possible route to d0-ferromagnetism in oxide spintronic materials.
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Submitted 11 December, 2010;
originally announced December 2010.
