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Magic thickness of 25 Å makes periodic metal-insulator transitions
Authors:
M. Sakoda,
H. Nobukane,
S. Shimoda,
S. Tanda
Abstract:
Novel quantum phenomena, including high-temperature superconductivity, topological properties, and charge/spin density waves, appear in low-dimensional conductive materials. It is possible to artificially create low-dimensional systems by fabricating ultrathin films, quantum wires, or quantum dots with flat interfaces. Some experiments have been performed on ultrathin compounds of strongly correla…
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Novel quantum phenomena, including high-temperature superconductivity, topological properties, and charge/spin density waves, appear in low-dimensional conductive materials. It is possible to artificially create low-dimensional systems by fabricating ultrathin films, quantum wires, or quantum dots with flat interfaces. Some experiments have been performed on ultrathin compounds of strongly correlated electron systems. However, since it is technically difficult to control multiple elements precisely, most of the properties of artificially fabricated low-dimensional compounds fall into uncharted territory. Here we show that extraordinary metal-insulator transitions that oscillate depending on the scale occur in CaRuO_3 films with a thickness of around several unit cells. We grow high-crystalline CaRuO_3 ultrathin films, whose surface roughness is controlled at 199 pm, by molecular beam epitaxy. We observe that resistivity oscillates with a magic thickness of 25 Å, which changes by 3 and 9 orders of magnitude at room temperature and at low temperature, respectively. These changes are much larger than quantum size effects. We also confirm the same periodicity with photoelectron spectroscopy by etching the ultrathin film. Considering the large energy, periodicity and anisotropy, we conclude that the oscillating transitions originate from the commensurability of Mott insulation triggered by Peierls instability arising from a dual restriction on the dimensions in wavenumber space and real space. We have shown the possibility of producing new functional materials by controlling film thickness on electron correlated compounds at the picometer level.
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Submitted 14 February, 2021;
originally announced February 2021.
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Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3
Authors:
Chun Lin,
Masayuki Ochi,
Ryo Noguchi,
Kenta Kuroda,
Masahito Sakoda,
Atsushi Nomura,
Masakatsu Tsubota,
Peng Zhang,
Cedric Bareille,
Kifu Kurokawa,
Yosuke Arai,
Kaishu Kawaguchi,
Hiroaki Tanaka,
Koichiro Yaji,
Ayumi Harasawa,
Makoto Hashimoto,
Donghui Lu,
Shik Shin,
Ryotaro Arita,
Satoshi Tanda,
Takeshi Kondo
Abstract:
Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operat…
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Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES to visualize the strain-driven band structure evolution of the quasi-1D superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-1D topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-1D superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for spin current robust against impurity scattering.
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Submitted 16 June, 2021; v1 submitted 14 September, 2020;
originally announced September 2020.
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Universal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films
Authors:
Feifei Yuan,
Vadim Grinenko,
Kazumasa Iida,
Stefan Richter,
Aurimas Pukenas,
Werner Skrotzki,
Masahito Sakoda,
Michio Naito,
Alberto Sala,
Marina Putti,
Aichi Yamashita,
Yoshihiko Takano,
Zhixiang Shi,
Kornelius Nielsch,
Ruben Huehne
Abstract:
Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the comp…
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Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field Hc2 at the superconducting transition temperature Tc (i.e. -dHc2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes Tc in a broad range, while the composition and disorder are almost unchanged. We show that -dHc2/dT scales linearly with Tc, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s+- superconductivity.
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Submitted 13 September, 2018;
originally announced September 2018.
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The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
Authors:
Feifei Yuan,
Kazumasa Iida,
Vadim Grinenko,
Paul Chekhonin,
Aurimas Pukenas,
Werner Skrotzki,
Masahito Sakoda,
Michio Naito,
Alberto Sala,
Marina Putti,
Aichi Yamashita,
Yoshihiko Takano,
Zhixiang Shi,
Kornelius Nielsch,
Ruben Huehne
Abstract:
Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of…
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Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
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Submitted 9 June, 2017;
originally announced June 2017.
