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Mid-infrared dispersion relations in InP based photonic crystal slabs revealed by Fourier-transform angle-resolved reflection spectroscopy
Authors:
Siti Chalimah,
Yuanzhao Yao,
Naoki Ikeda,
Kei Kaneko,
Rei Hashimoto,
Tsutomu Kakuno,
Shinji Saito,
Takashi Kuroda,
Yoshimasa Sugimoto,
Kazuaki Sakoda
Abstract:
Photonic crystals (PCs) offer unique ways to control light-matter interactions. The measurement of dispersion relations is a fundamental prerequisite if we are to create novel functionalities in PC devices. Angle-resolved spectroscopic techniques are commonly used for characterizing PCs that work in the visible and near-infrared regions. However, the techniques cannot be applied to the mid- and lo…
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Photonic crystals (PCs) offer unique ways to control light-matter interactions. The measurement of dispersion relations is a fundamental prerequisite if we are to create novel functionalities in PC devices. Angle-resolved spectroscopic techniques are commonly used for characterizing PCs that work in the visible and near-infrared regions. However, the techniques cannot be applied to the mid- and long-wavelength infrared regions due to the limited sensitivity of infrared detectors. Here, we propose an alternative approach to measuring infrared dispersion relations. We construct a high-precision angle-resolved setup compatible with a Fourier-transform spectrometer with an angle resolution as high as 0.3 degrees. Hence, the reflection spectra are mapped to the 2D photonic band structures of In(Ga,Al)As/InP based PC slabs, which are designed as mid-infrared PC surface-emitting lasers. We identify complex PC modes with the aid of polarization selection rules derived by the group theory. Spectral analysis makes it possible to evaluate the mode quality (Q) factors. Therefore, angle-resolved reflection is a useful way of optimizing 2D PC parameters for mid-infrared devices.
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Submitted 3 June, 2021;
originally announced June 2021.
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Multi-hop Routing with Proactive Route Refinement for 60 GHz Millimeter-Wave Networks
Authors:
Chanaka Samarathunga,
Mohamed Abouelseoud,
Kazuyuki Sakoda,
Morteza Hashemi
Abstract:
Fundamental requirements of mmWave systems are peak data rates of multiple Gbps and latencies of the order of at most a few milliseconds. However, highly directional mmWave links are susceptible to frequent link failures under stress conditions such as mobility and human blockage. Under these conditions, multi-hop routing can achieve reliable and robust performance. In this paper, we consider mult…
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Fundamental requirements of mmWave systems are peak data rates of multiple Gbps and latencies of the order of at most a few milliseconds. However, highly directional mmWave links are susceptible to frequent link failures under stress conditions such as mobility and human blockage. Under these conditions, multi-hop routing can achieve reliable and robust performance. In this paper, we consider multi-hop millimeter wave (mmWave) wireless systems and propose proactive route refinement schemes that are particularly important under dynamic scenarios. First, we consider the AODV-type protocols and propose a cross-layer approach that integrates sectorized communication at the MAC layer with on-demand multi-hop routing at the network layer. Next, we consider Backpressure routing protocol, and enhance this protocol with periodic HELLO status messages. System-level simulation results based on the IEEE 802.11ad standard are provided that confirm the benefits of proactive route refinement for the ADOV-type and Backpressure routing protocols.
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Submitted 4 November, 2020; v1 submitted 3 November, 2020;
originally announced November 2020.
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On the Benefits of Multi-hop Communication for Indoor 60 GHz Wireless Networks
Authors:
Chanaka Samarathunga,
Mohamed Abouelseoud,
Kazuyuki Sakoda,
Morteza Hashemi
Abstract:
The spectrum-rich millimeter wave (mmWave) frequencies have the potential to alleviate the spectrum crunch that the wireless and cellular operators are already experiencing. However, compared with traditional wireless communication in the sub-6 GHz bands, due to small wavelengths most objects such as human body, cause significant additional path losses (up to 20dB), which can entirely break the mm…
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The spectrum-rich millimeter wave (mmWave) frequencies have the potential to alleviate the spectrum crunch that the wireless and cellular operators are already experiencing. However, compared with traditional wireless communication in the sub-6 GHz bands, due to small wavelengths most objects such as human body, cause significant additional path losses (up to 20dB), which can entirely break the mmWave link. Also, mmwave links suffer from limited range of communication. In this paper, we resort to network layer solutions to demonstrate the benefits of multi-hop routing in mitigating the blockage issue and extending communication range in mmWave band. To this end, we develop a hop-by-hop multi-path routing protocol that finds one primary and one backup next-hop per destination in order to guarantee reliable and robust communication under extreme stress conditions. System-level simulations based on the IEEE802.11ad specifications demonstrate that the proposed routing protocol provides a reliable end-to-end throughput performance, while satisfying the latency requirements.
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Submitted 3 September, 2020; v1 submitted 31 August, 2020;
originally announced September 2020.
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Apparatus for high-precision angle-resolved reflection spectroscopy in the mid-infrared region
Authors:
Takashi Kuroda,
Siti Chalimah,
Yuanzhao Yao,
Naoki Ikeda,
Yoshimasa Sugimoto,
Kazuaki Sakoda
Abstract:
Fourier transform (FT) spectroscopy is a versatile technique for studying the infrared (IR) optical response of solid-, liquid-, and gas-phase samples. In standard FT-IR spectrometers, a light beam passing through a Michelson interferometer is focused onto a sample with condenser optics. This design enables us to examine relatively small samples, but the large solid angle of the focused infrared b…
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Fourier transform (FT) spectroscopy is a versatile technique for studying the infrared (IR) optical response of solid-, liquid-, and gas-phase samples. In standard FT-IR spectrometers, a light beam passing through a Michelson interferometer is focused onto a sample with condenser optics. This design enables us to examine relatively small samples, but the large solid angle of the focused infrared beam makes it difficult to analyze angle-dependent characteristics. Here we design and construct a high-precision angle-resolved reflection setup compatible with a commercial FT-IR spectrometer. Our setup converts the focused beam into an achromatically collimated beam with an angle dispersion as high as 0.25$^\circ$. The setup also permits us to scan the incident angle over ~8$^\circ$ across zero (normal incidence). The beam diameter can be reduced to ~1 mm, which is limited by the sensitivity of an HgCdTe detector. The small-footprint apparatus is easily installed in an FT-IR sample chamber. As a demonstration of the capability of our reflection setup we measure the angle-dependent mid-infrared reflectance of two-dimensional photonic crystal slabs and determine the in-plane dispersion relation in the vicinity of the $Γ$ point in momentum space. We observe the formation of photonic Dirac cones, i.e., linear dispersions with an accidental degeneracy at $Γ$, in an ideally designed sample. Our apparatus is useful for characterizing various systems that have a strong in-plane anisotropy, including photonic crystal waveguides, plasmonic metasurfaces, and molecular crystalline films.
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Submitted 27 April, 2020;
originally announced April 2020.
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Beamformed mmWave System Propagation at 60GHz in an Office Environment
Authors:
Syed Hashim Ali Shah,
Sarankumar Balakrishnan,
Liangxiao Xin,
Mohamed Abouelseoud,
Kazuyuki Sakoda,
Ken Tanaka,
Christopher Slezak,
Sundeep Rangan,
Shivendra Panwar
Abstract:
Millimeter wave wireless systems rely heavily on directional communication in narrow steerable beams. Tools to measure the spatial and temporal nature of the channel are necessary to evaluate beamforming and related algorithms. This paper presents a novel 60~GHz phased-array based directional channel sounder and data analysis procedure that can accurately extract paths and their transmit and recei…
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Millimeter wave wireless systems rely heavily on directional communication in narrow steerable beams. Tools to measure the spatial and temporal nature of the channel are necessary to evaluate beamforming and related algorithms. This paper presents a novel 60~GHz phased-array based directional channel sounder and data analysis procedure that can accurately extract paths and their transmit and receive directions. The gains along each path can also be measured for analyzing blocking scenarios. The sounder is validated in an indoor office environment.
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Submitted 28 March, 2020;
originally announced March 2020.
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Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $μ$m
Authors:
N. Ha,
T. Mano,
S. Dubos,
T. Kuroda,
Y. Sakuma,
K. Sakoda
Abstract:
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $μ$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autoc…
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We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $μ$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.
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Submitted 20 January, 2020;
originally announced January 2020.
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Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A
Authors:
Neul Ha,
Takaaki Mano,
Takashi Kuroda,
Yoshiki Sakuma,
Kazuaki Sakoda
Abstract:
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the…
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A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot grown by droplet epitaxy. Coincidence histograms obtained at a temperature of 10 K reveal the generation of quantum entangled pairs that have a fidelity to the Bell pairs of 0.71 +- 0.015, much beyond the classical limit. The quantum nature of the emitted pairs is conserved at temperatures of up to ~65 K, and is essentially limited by the charge carrier confinement in the present dot system. Our study offers a guideline for the fabrication of quantum entangled pair sources suitable for practical use.
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Submitted 20 June, 2019;
originally announced June 2019.
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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
Authors:
M. Manca,
G. Wang,
T. Kuroda,
S. Shree,
A. Balocchi,
P. Renucci,
X. Marie,
M. V. Durnev,
M. M. Glazov,
K. Sakoda,
T. Mano,
T. Amand,
B. Urbaszek
Abstract:
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p…
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
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Submitted 27 March, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
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High-energy exciton transitions in quasi-two-dimensional cadmium chalcogenide nanoplatelets
Authors:
Roman B. Vasiliev,
Alexander I. Lebedev,
Elizabeth P. Lazareva,
Natalia N. Shlenskaya,
Vladimir B. Zaytsev,
Alexei G. Vitukhnovsky,
Yuanzhao Yao,
Kazuaki Sakoda
Abstract:
Semiconductor nanoparticles of cadmium chalcogenides are known to exhibit pronounced thickness-dependent $E_0$ series of exciton transitions at the $Γ$ point of the Brillouin zone (BZ). In this work, we report an experimental evidence for high-energy series of exciton transitions, which originates from BZ points different from the $Γ$ point, in the family of cadmium chalcogenide quasi-2D nanoplate…
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Semiconductor nanoparticles of cadmium chalcogenides are known to exhibit pronounced thickness-dependent $E_0$ series of exciton transitions at the $Γ$ point of the Brillouin zone (BZ). In this work, we report an experimental evidence for high-energy series of exciton transitions, which originates from BZ points different from the $Γ$ point, in the family of cadmium chalcogenide quasi-2D nanoplatelets (NPLs). Intensive UV absorption bands demonstrating a pronounced size effect are observed for CdTe, CdSe, and CdS NPLs in addition to the $E_0$ exciton bands in the visible region. These new bands are attributed to transitions analogous to the $E_1$, $E_1+Δ_1$, and $E_2$ series observed in bulk crystals. First-principles DFT calculations of the electronic structure and absorption spectra support this explanation and show that the main contribution to these optical transitions comes from $X$ and $M$ points of the 2D BZ, which originate from $L$ and $X$ points of the 3D BZ. At the same time, the $E_0$ series of transitions at the $Γ$ point is well described by the multiband effective-mass model. The observation of the UV exciton bands reveals tunable optical properties of cadmium chalcogenide NPLs in UV spectral region, which may be interesting for practical applications.
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Submitted 27 March, 2017;
originally announced March 2017.
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Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy
Authors:
N. Ha,
T. Mano,
Y. -N. Wu,
Y. -W. Ou,
S. -J. Cheng,
Y. Sakuma,
K. Sakoda,
T. Kuroda
Abstract:
By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. W…
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By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al,Ga)As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 micrometer by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of barrier choice.
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Submitted 22 July, 2016;
originally announced July 2016.
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Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
Authors:
M. Vidal,
M. V. Durnev,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots.…
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In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape.
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Submitted 9 March, 2016;
originally announced March 2016.
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Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots
Authors:
M. V. Durnev,
M. Vidal,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
N. Ha,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescen…
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We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states.
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Submitted 25 November, 2015;
originally announced November 2015.
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Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
Authors:
N. Ha,
T. Mano,
Y. L. Chou,
Y. N. Wu,
S. J. Cheng,
J. Bocquel,
P. M. Koenraad,
A. Ohtake,
Y. Sakuma,
K. Sakoda,
T. Kuroda
Abstract:
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a…
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Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm showed broad spectral peaks with an average width as large as ~5 meV, but shallow dots with a height of ~2 nm showed resolution-limited spectral lines (<120 micro eV). The measured height dependence of the linewidths is in good agreement with Stark coefficients calculated for the experimental shape variation. We attribute the microscopic source of fluctuating electric fields to the random motion of surface charges at the vacuum-semiconductor interface. Our results offer guidelines for creating frequency-locked photon sources, which will serve as key devices for long-distance quantum key distribution.
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Submitted 16 June, 2015; v1 submitted 9 April, 2015;
originally announced April 2015.
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Highly tunable ultra-narrow-resonances with optical nano-antenna phased arrays in the infrared
Authors:
Shi-Qiang Li,
Wei Zhou,
Peijun Guo,
D. Bruce Buchholz,
Ziwei Qiu,
John B. Ketterson,
Leonidas E. Ocola,
Kazuaki Sakoda,
Robert P. H. Chang
Abstract:
We report our recent development in pursuing high Quality-Factor (high-Q factor) plasmonic resonances, with vertically aligned two dimensional (2-D) periodic nanorod arrays. The 2-D vertically aligned nano-antenna array can have high-Q resonances varying arbitrarily from near infrared to terahertz regime, as the antenna resonances of the nanorod are highly tunable through material properties, the…
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We report our recent development in pursuing high Quality-Factor (high-Q factor) plasmonic resonances, with vertically aligned two dimensional (2-D) periodic nanorod arrays. The 2-D vertically aligned nano-antenna array can have high-Q resonances varying arbitrarily from near infrared to terahertz regime, as the antenna resonances of the nanorod are highly tunable through material properties, the length of the nanorod, and the orthogonal polarization direction with respect to the lattice surface,. The high-Q in combination with the small optical mode volume gives a very high Purcell factor, which could potentially be applied to various enhanced nonlinear photonics or optoelectronic devices. The 'hot spots' around the nanorods can be easily harvested as no index-matching is necessary. The resonances maintain their high-Q factor with the change of the environmental refractive index, which is of great interest for molecular sensing.
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Submitted 13 November, 2014;
originally announced November 2014.
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Broadband resonances in ITO nanorod arrays
Authors:
Shi-Qiang Li,
Kazuaki Sakoda,
John B. Ketterson,
Robert P. H. Chang
Abstract:
In the nanophotonics community, there is an active discussion regarding the origin of the selective absorption/scattering of light by the resonances with nanorod arrays. Here we report a study of the resonances in ordered indium-tin-oxide (ITO) nanorod arrays resulted from the waveguide modes. We discover that with only 2.4% geometrical coverage, the micron-length nanorod arrays strongly interact…
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In the nanophotonics community, there is an active discussion regarding the origin of the selective absorption/scattering of light by the resonances with nanorod arrays. Here we report a study of the resonances in ordered indium-tin-oxide (ITO) nanorod arrays resulted from the waveguide modes. We discover that with only 2.4% geometrical coverage, the micron-length nanorod arrays strongly interact with light across an extra-wide band from visible to mid-infrared resulting in less than 10% transmission. Simulations show excellent agreement with our experimental observation. Near-field profile obtained from simulation reveals the electric field is mainly localized on the surfaces of the nanorods at all the resonances. Theoretical analysis is then applied to explain the resonances and it was found that the resonances in the visible are different from those in the infrared. When the light arrives at the array, part of the light wave propagates through the free space in between the nanorods and part of the wave is guided inside the nanorods and the phase difference at the ends of the rod interactions forms the basis of the resonances in the visible region; while the resonances in the infrared are Fabry-Perot resonances of the surface guided waves between the two ends of the nanorods. The simple analytical formulae developed predict the spectral positions of these resonances well. This information can be used to design devices like wavelength-selective photodetector, modulators, and nanorod-based solar cells.
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Submitted 17 May, 2015; v1 submitted 13 November, 2014;
originally announced November 2014.
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Charge tuning in [111] grown GaAs droplet quantum dots
Authors:
L. Bouet,
M. Vidal,
T. Mano,
N. Ha,
T. Kuroda,
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
X. Marie,
T. Amand,
K. Sakoda,
G. Wang,
B. Urbaszek
Abstract:
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence…
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We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
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Submitted 24 July, 2014;
originally announced July 2014.
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Nonlocal biphoton generation in Werner state from a single semiconductor quantum dot
Authors:
H. Kumano,
H. Nakajima,
T. Kuroda,
T. Mano,
K. Sakoda,
I. Suemune
Abstract:
We demonstrate Werner-like polarization-entangled state generation disapproving local hidden variable theory from a single semiconductor quantum dot. By exploiting tomographic analysis with temporal gating, we find biphoton states are mapped on the Werner state, which is crucial for quantum information applications due to its versatile ramifications such as usefulness to teleportation. Observed ti…
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We demonstrate Werner-like polarization-entangled state generation disapproving local hidden variable theory from a single semiconductor quantum dot. By exploiting tomographic analysis with temporal gating, we find biphoton states are mapped on the Werner state, which is crucial for quantum information applications due to its versatile ramifications such as usefulness to teleportation. Observed time evolution of the biphoton state brings us systematic understanding on a relationship between tomographically reconstructed biphoton state and a set of parameters characterizing exciton state including fine-structure splitting and cross-dephasing time.
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Submitted 1 August, 2014; v1 submitted 26 June, 2014;
originally announced June 2014.
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Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy
Authors:
X. Liu,
N. Ha,
H. Nakajima,
T. Mano,
T. Kuroda,
B. Urbaszek,
H. Kumano,
I. Suemune,
Y. Sakuma,
K. Sakoda
Abstract:
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on…
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The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (1.3 micron-m), C (1.55 micron-m), and L (1.6 micron-m) telecom bands. The distribution of the fine-structure splittings is considerably smaller than those reported in previous works on dots at similar wavelengths. The presence of dots with degenerate exciton lines is further confirmed by the optical orientation technique. Thus, our dot systems are expected to serve as efficient entangled photon emitters for long-distance fiber-based quantum key distribution.
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Submitted 17 June, 2014;
originally announced June 2014.
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Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field
Authors:
G. Sallen,
S. Kunz,
T. Amand,
L. Bouet,
T. Kuroda,
T. Mano,
D. Paget,
O. Krebs,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pum** of nuclear spins at zero magnetic field in strain free GaAs quantum dot…
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Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pum** of nuclear spins at zero magnetic field in strain free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse component of the nuclear spin polarization in the absence of lattice strain i.e. nuclear quadrupole effects, as reproduced by our model calculations.
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Submitted 5 September, 2013;
originally announced September 2013.
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Symmetric quantum dots as efficient sources of highly entangled photons
Authors:
T. Kuroda,
T. Mano,
N. Ha,
H. Nakajima,
H. Kumano,
B. Urbaszek,
M. Jo,
M. Abbarachi,
Y. Sakuma,
K. Sakoda,
I. Suemune,
X. Marie,
T. Amand
Abstract:
An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photon…
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An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photons strongly violate Bell's inequality and reveal a fidelity to the Bell state as high as 86 (+-2) % without postselection. This result is an important step towards scalable quantum-communication applications with efficient sources.
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Submitted 26 February, 2013;
originally announced February 2013.
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Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
M. Jo,
T. Mano,
T. Kuroda,
K. Sakoda,
S. Kunz,
G. Sallen,
L. Bouet,
X. Marie,
D. Lagarde,
T. Amand,
B. Urbaszek
Abstract:
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowa…
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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.
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Submitted 29 November, 2012;
originally announced November 2012.
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Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
Authors:
G. Sallen,
B. Urbaszek,
M. M. Glazov,
E. L. Ivchenko,
T. Kuroda,
T. Mano,
S. Kunz,
M. Abbarchi,
K. Sakoda,
D. Lagarde,
A. Balocchi,
X. Marie,
T. Amand
Abstract:
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interpl…
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In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.
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Submitted 30 June, 2011;
originally announced June 2011.
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Shape control of QDs studied by cross-sectional scanning tunneling microscopy
Authors:
J. G. Keizer,
M. Bozkurt,
J. Bocquel,
P. M. Koenraad,
T. Mano,
T. Noda,
K. Sakoda,
E. C. Clark,
M. Bichler,
G. Abstreiter,
J. J. Finley,
W. Lu,
T. Rohel,
H. Folliot,
N. Bertru
Abstract:
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thicknes…
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In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first cap** layer. Concerning the technique of antimony cap** we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and cap** with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.
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Submitted 15 November, 2010;
originally announced November 2010.
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Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
Authors:
Thomas Belhadj,
Thierry Amand,
Alejandro Kunold,
Claire-Marie Simon,
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Sakoda,
Sergej Kunz,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises…
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We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.
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Submitted 2 June, 2010;
originally announced June 2010.
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Bunching visibility for correlated photons from single GaAs quantum dots
Authors:
T. Kuroda,
T. Belhadj,
M. Abbarchi,
C. Mastrandrea,
M. Gurioli,
T. Mano,
N. Ikeda,
Y. Sugimoto,
K. Asakawa,
N. Koguchi,
K. Sakoda,
B. Urbaszek,
T. Amand,
X. Marie
Abstract:
We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a mod…
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We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.
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Submitted 19 November, 2008;
originally announced November 2008.
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Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy
Authors:
Thomas Belhadj,
Takashi Kuroda,
Claire-Marie Simon,
Thierry Amand,
Takaaki Mano,
Kazuaki Sakoda,
Nobuyuki Koguchi,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting…
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We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K. Optical injection of spin polarized electrons into a dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build-up time of the nuclear polarization in a single GaAs dot in the order of one second.
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Submitted 6 October, 2008; v1 submitted 30 June, 2008;
originally announced June 2008.
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Photon correlation in GaAs self-assembled quantum dots
Authors:
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Watanabe,
M. Yamagiwa,
K. Kuroda,
K. Sakoda,
G. Kido,
N. Koguchi,
C. Mastrandrea,
L. Cavigli,
M. Gurioli,
Y. Ogawa,
F. Minami
Abstract:
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecti…
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We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination.
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Submitted 15 April, 2008;
originally announced April 2008.
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Final-state read-out of exciton qubits by observing resonantly excited photoluminescence in quantum dots
Authors:
K. Kuroda,
T. Kuroda,
K. Watanabe,
T. Mano,
K. Sakoda,
G. Kido,
N. Koguchi
Abstract:
We report on a new approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, we greatly suppress the elastic scattering of excita…
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We report on a new approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, we greatly suppress the elastic scattering of excitation beams, by applying obliquely incident geometry to the micro photoluminescence set-up. Rabi oscillations of the ground-state excitons appear to be involved in the dependence of emission intensity on excitation amplitude.
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Submitted 27 December, 2006;
originally announced December 2006.
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Self-assembly of laterally aligned GaAs quantum dot pairs
Authors:
M. Yamagiwa,
T. Mano,
T. Kuroda,
T. Tateno,
K. Sakoda,
G. Kido,
N. Koguchi,
F. Minami
Abstract:
We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Fin…
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We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.
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Submitted 21 July, 2006;
originally announced July 2006.
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Optical transitions in quantum ring complexes
Authors:
T. Kuroda,
T. Mano,
T. Ochiai,
S. Sanguinetti,
K. Sakoda,
G. Kido,
N. Koguchi
Abstract:
Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and…
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Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure inherent in the unique quantum system is analyzed using a micro-photoluminescence technique. One advantage of our growth method is that it presents the possibility of varying the ring geometry. Two samples are prepared and studied: a single-wall ring and a concentric double-ring. For both samples, highly efficient photoluminescence emitted from a single quantum structure is detected. The spectra show discrete resonance lines, which reflect the quantized nature of the ring-type electronic states. In the concentric double--ring, the carrier confinement in the inner ring and that in the outer ring are identified distinctly as split lines. The observed spectra are interpreted on the basis of single electron effective mass calculations.
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Submitted 24 September, 2005;
originally announced September 2005.
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Symmetry characterization of eigenstates in opal-based photonic crystals
Authors:
F. Lopez-Tejeira,
T. Ochiai,
K. Sakoda,
J. Sanchez-Dehesa
Abstract:
The complete symmetry characterization of eigenstates in bare opal systems is obtained by means of group theory. This symmetry assignment has allowed us to identify several bands that cannot couple with an incident external plane wave. Our prediction is supported by layer-KKR calculations, which are also performed: the coupling coefficients between bulk modes and externally excited field tend to…
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The complete symmetry characterization of eigenstates in bare opal systems is obtained by means of group theory. This symmetry assignment has allowed us to identify several bands that cannot couple with an incident external plane wave. Our prediction is supported by layer-KKR calculations, which are also performed: the coupling coefficients between bulk modes and externally excited field tend to zero when symmetry properties mismatch.
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Submitted 5 November, 2001;
originally announced November 2001.
