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Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
Authors:
Mashnoon Alam Sakib,
Brandon Triplett,
William Harris,
Naveed Hussain,
Alexander Senichev,
Melika Momenzadeh,
Joshua Bocanegra,
Ruqian Wu,
Alexandra Boltasseva,
Vladimir M. Shalaev,
Maxim R. Shcherbakov
Abstract:
Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the em…
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Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the emitters, limit their full potential. In this work, we experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs by engineering emitter-cavity coupling and enhancing radiative emission at room temperature. The plasmonic nanoresonator architecture consists of gold-coated silicon pillars capped with an alumina spacer layer, enabling a 10-fold local field enhancement in the emission band of native hBN defects. Confocal photoluminescence and second-order autocorrelation measurements show bright SPEs with sub-30 meV bandwidth and a saturated emission rate of more than 3.8 million counts per second. We measure a Purcell factor of 4.9, enabling average SPE lifetimes of 480 ps, a five-fold reduction as compared to emission from gold-free devices, along with an overall SPE yield of 21%. Density functional theory calculations further reveal the beneficial role of an alumina spacer between defected hBN and gold, as an insulating layer can mitigate the electronic broadening of emission from defects proximal to gold. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
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Submitted 3 May, 2024;
originally announced May 2024.
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Vacancy-Engineered Phonon Polaritons in $α$-MoO$_3$
Authors:
Naveed Hussain,
Mashnoon Alam Sakib,
Zhaoxu Li,
William Harris,
Shehzad Ahmed,
Ruqian Wu,
H. Kumar Wickramasinghe,
Maxim R. Shcherbakov
Abstract:
Low-symmetry van der Waals materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate the HPhPs in $α$-MoO$_3$ using high pressure and temper…
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Low-symmetry van der Waals materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate the HPhPs in $α$-MoO$_3$ using high pressure and temperature treatment. The hot pressing engineers the stoichiometry of $α$-MoO$_3$ by controllably introducing oxygen vacancy defects (OVDs), which cause a semiconductor-to-semimetal transition. Our density functional theory and finite-difference time-domain results, combined with experimental studies show that the OVDs induce a metastable metallic state by reducing the bandgap while modifying the intrinsic dielectric permittivity of $α$-MoO$_3$. Photo-induced force microscopy confirms an average dielectric permittivity tunability of $|Δ\varepsilon/\varepsilon|\approx0.35$ within a Reststrahlen band of $α$-MoO$_3$, resulting in drastic shifts in the HPhP dispersion. The polariton lifetimes for pristine and hot-pressed flakes were measured as $0.92 \pm 0.06$ and $0.86 \pm 0.11$ ps, respectively, exhibiting a loss of only 7%, while the group velocity exhibited an increase of $38.8 \pm 0.2$%. The OVDs in $α$-MoO$_3$ provide a low-loss platform that enables active tuning of mid-infrared HPhPs and have a profound impact on applications in super-resolution imaging, nanoscale thermal manipulation, boosted molecular sensing, and on-chip photonic circuits.
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Submitted 11 September, 2023;
originally announced September 2023.
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The 10% Gd and Ti co-doped BiFeO$_3$: A promising multiferroic material
Authors:
M. A. Basith,
Areef Billah,
M A Jalil,
Nilufar Yesmin,
Mashnoon Alam Sakib,
Emran Khan Ashik,
S. M. Enamul Hoque Yousuf,
Sayeed Shafayet Chowdhury,
Md. Sarowar Hossain,
Shakhawat H. Firoz,
Bashir Ahmmad
Abstract:
In this investigation, undoped BiFeO$_3$, Gd doped Bi$_{0.9}$Gd$_{0.1}$FeO$_3$, and Gd-Ti co-doped Bi$_{0.9}$Gd$_{0.1}$Fe$_{1-x}$Ti$_x$O$_3$ (x = 0.10, 0.20) materials were synthesized to report their multiferroic properties. The structural analysis and phase identification of these multiferroic ceramics were performed using Rietveld refinement. The Rietveld analysis has confirmed the high phase p…
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In this investigation, undoped BiFeO$_3$, Gd doped Bi$_{0.9}$Gd$_{0.1}$FeO$_3$, and Gd-Ti co-doped Bi$_{0.9}$Gd$_{0.1}$Fe$_{1-x}$Ti$_x$O$_3$ (x = 0.10, 0.20) materials were synthesized to report their multiferroic properties. The structural analysis and phase identification of these multiferroic ceramics were performed using Rietveld refinement. The Rietveld analysis has confirmed the high phase purity of the 10% Gd-Ti co-doped Bi$_{0.9}$Gd$_{0.1}$Fe$_{0.9}$Ti$_{0.1}$O$_3$ sample compared to that of other compositions under investigation. The major phase of this particular composition is of rhombohedral \textit{R3c} type structure (wt% $>99\%$) with negligible amount of impurity phases. In terms of characterization, we address magnetic properties of this co-doped ceramic system by applying substantially higher magnetic fields than that applied in previously reported investigations. The dependence of temperature and maximum applied magnetic fields on their magnetization behavior have also been investigated. Additionally, the leakage current density has been measured to explore its effect on the ferroelectric properties of this multiferroic system. The outcome of this investigation suggests that the substitution of 10% Gd and Ti in place of Bi and Fe, respectively, in BiFeO$_3$ significantly enhances its multiferroic properties. The improved properties of this specific composition is associated with homogeneous reduced grain size, significant suppression of impurity phases and reduction in leakage current density which is further asserted by polarization vs. electric field hysteresis loop measurements.
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Submitted 3 October, 2016;
originally announced October 2016.
