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Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding
Authors:
Marek Burakowski,
Paweł Holewa,
Aurimas Sakanas,
Anna Musiał,
Grzegorz Sęk,
Paweł Mrowiński,
Kresten Yvind,
Elizaveta Semenova,
Marcin Syperek
Abstract:
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate th…
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Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $μ$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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Submitted 23 November, 2023;
originally announced November 2023.
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On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices
Authors:
Daniel A. Vajner,
Paweł Holewa,
Emilia Zięba-Ostój,
Maja Wasiluk,
Martin von Helversen,
Aurimas Sakanas,
Alexander Huck,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Marcin Syperek,
Elizaveta Semenova,
Tobias Heindel
Abstract:
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, rem…
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Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550$\,$nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of $4π$ and a high single-photon purity in terms of $g^{(2)}(0)=0.005(1)$ and $0.015(1)$ for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the $π$-pulse exceeding 80$\%$. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to $35(3)\%$, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
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Submitted 16 January, 2024; v1 submitted 14 June, 2023;
originally announced June 2023.
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High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Authors:
Paweł Holewa,
Daniel A. Vajner,
Emilia Zięba-Ostój,
Maja Wasiluk,
Benedek Gaál,
Aurimas Sakanas,
Marek Burakowski,
Paweł Mrowiński,
Bartosz Krajnik,
Meng Xiong,
Kresten Yvind,
Niels Gregersen,
Anna Musiał,
Alexander Huck,
Tobias Heindel,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic…
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Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
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Submitted 23 May, 2024; v1 submitted 5 April, 2023;
originally announced April 2023.
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Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Authors:
Yury Berdnikov,
Pawel Holewa,
Shima Kadkhodazadeh,
Jan Mikolaj Smigiel,
Adrianna Frackowiak,
Aurimas Sakanas,
Kresten Yvind,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailo…
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Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.
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Submitted 26 January, 2023;
originally announced January 2023.
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Experimental Demonstration of Nanolaser with sub-$μ$A Threshold Current
Authors:
E. Dimopoulos,
M. Xiong,
A. Sakanas,
A. Marchevsky,
G. Dong,
Y. Yu,
E. Semenova,
J. Mørk,
K. Yving
Abstract:
We demonstrate a photonic crystal nanolaser exhibiting an ultra-low threshold of 730 nA at telecom wavelengths. The laser can be directly modulated at 3 GHz at an energy cost of 1 fJ/bit. This is the lowest threshold reported for any laser operating at room temperature and facilitates low-energy on-chip links.
We demonstrate a photonic crystal nanolaser exhibiting an ultra-low threshold of 730 nA at telecom wavelengths. The laser can be directly modulated at 3 GHz at an energy cost of 1 fJ/bit. This is the lowest threshold reported for any laser operating at room temperature and facilitates low-energy on-chip links.
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Submitted 9 December, 2022;
originally announced December 2022.
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Cavity-dum** using a microscopic Fano laser
Authors:
G. Dong,
S. L. Liang,
A. Sakanas,
E. Semenova,
K. Yvind,
J. Mork,
Y. Yu
Abstract:
A microlaser with low energy consumption and high speed is crucial for on-chip photonic networks. Presently, the modulation of microlasers is based on modulating the gain of the laser, which implies a trade-off between the output peak power and the modulation energy. Besides, the temporal width of the output pulse is restricted by the carrier relaxation time. These limitations can be overcome by m…
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A microlaser with low energy consumption and high speed is crucial for on-chip photonic networks. Presently, the modulation of microlasers is based on modulating the gain of the laser, which implies a trade-off between the output peak power and the modulation energy. Besides, the temporal width of the output pulse is restricted by the carrier relaxation time. These limitations can be overcome by modulating, instead, the loss of the laser by the scheme of cavity dum**, which is ideal for intense and ultrashort pulse extraction. However, the miniaturization of cavity-dumped lasers has been a long-standing challenge, and no microscopic cavity-dumped lasers were yet realized. Here we demonstrate an ultra-small cavity-dumped microscopic laser based on an optical Fano resonance, which generates optical pulses with peak power more than one order of magnitude higher than the corresponding conventional gain-modulated laser. This demonstration paves the way for realizing microscopic lasers for low-power chip-scale applications.
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Submitted 17 November, 2022;
originally announced November 2022.
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Optimization of heterogeneously integrated InP-Si on-chip photonic components
Authors:
P. Mrowiński,
P. Holewa,
A. Sakanas,
G. Sęk,
E. Semenova,
M. Syperek
Abstract:
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-b…
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We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using the existing semiconductor processing technologies. Our numerical studies reveal nearly 86% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field modes along a tapered geometry. The coupling efficiency of a dipole emitting to the hybrid InP/Si waveguide is evaluated to ~60%, which results in more than 50% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plain outcoupling configurations. In the former case, the outcoupling amounts to ~26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 10%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 μm spectral range.
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Submitted 28 November, 2022; v1 submitted 31 August, 2022;
originally announced August 2022.
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Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Authors:
Evangelos Dimopoulos,
Aurimas Sakanas,
Andrey Marchevsky,
Meng Xiong,
Yi Yu,
Elizaveta Semenova,
Jesper Mørk,
Kresten Yvind
Abstract:
Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room tem…
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Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-do** absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pum** schemes.
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Submitted 6 July, 2022;
originally announced July 2022.
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Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
Authors:
Paweł Holewa,
Aurimas Sakanas,
Uğur Meriç Gür,
Paweł Mrowiński,
Alexander Huck,
Bi-Ying Wang,
Anna Musiał,
Kresten Yvind,
Niels Gregersen,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible app…
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Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting photons in the telecom bands ($1460-1625$ nm) allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of $\sim10\%$. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of a single-photon generation with purity $\mathcal{P}>98\%$ at the liquid helium temperature and $\mathcal{P}=75\%$ at $80$ K.
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Submitted 22 August, 2021; v1 submitted 15 April, 2021;
originally announced April 2021.
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Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding
Authors:
Aurimas Sakanas,
Elizaveta Semenova,
Luisa Ottaviano,
Jesper Mørk,
Kresten Yvind
Abstract:
In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtaine…
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In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. After experimental study of three different bonding and processing configurations which represent typical on-chip photonic device fabrication conditions, the smallest degree of linearly-corrected distortion errors is obtained for the directly bonded wafer, with the alignment marks both formed and measured on the same InP layer side after bonding (equivalent to single-sided processing of the bonded layer). Under these conditions, multilayer exposure alignment accuracy is limited by the InP layer deformation after the initial pattern exposure mainly due to the mechanical wafer clam** in the e-beam cassette. Bonding-induced InP layer deformations dominate in cases of direct and BCB bonding when the alignment marks are formed on one InP wafer side, and measured after bonding and substrate removal from another (equivalent to double-sided processing of the bonded layer). The findings of this paper provide valuable insight into the origin of the multilayer exposure misalignment errors for the bonded III-V on Si wafers, and identify important measures that need to be taken to optimize the fabrication procedures for demonstration of efficient and high-performance on-chip photonic integrated devices.
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Submitted 3 December, 2018; v1 submitted 21 August, 2018;
originally announced August 2018.
