Showing 1–7 of 7 results for author: Sakaguchi, I

Highly hydrogen-sensitive thermal desorption spectroscopy system for quantitative analysis of low hydrogen concentration (~1 x 10^16 atoms/cm3) in thin-film samples

Authors: Taku Hanna, Hidenori Hiramatsu, Isao Sakaguchi, Hideo Hosono

Abstract: We developed a highly hydrogen-sensitive thermal desorption spectroscopy (HHS-TDS) system to detect and quantitatively analyze low hydrogen concentrations in thin films. The system was connected to an in situ sample-transfer chamber system, manipulators, and an rf magnetron sputtering thin-film deposition chamber under an ultra-high-vacuum (UHV) atmosphere of ~10^-8 Pa. The following key requireme… ▽ More We developed a highly hydrogen-sensitive thermal desorption spectroscopy (HHS-TDS) system to detect and quantitatively analyze low hydrogen concentrations in thin films. The system was connected to an in situ sample-transfer chamber system, manipulators, and an rf magnetron sputtering thin-film deposition chamber under an ultra-high-vacuum (UHV) atmosphere of ~10^-8 Pa. The following key requirements were proposed in develo** the HHS-TDS: (i) a low hydrogen residual partial pressure, (ii) a low hydrogen exhaust velocity, and (iii) minimization of hydrogen thermal desorption except from the bulk region of the thin films. To satisfy these requirements, appropriate materials and components were selected, and the system was constructed to extract the maximum performance from each component. Consequently, ~2000 times higher sensitivity to hydrogen than that of a commercially available UHV-TDS system was achieved using H+-implanted Si samples. Quantitative analysis of an amorphous oxide semiconductor InGaZnO4 thin film (1 cm x 1 cm x 1um thickness, hydrogen concentration of 4.5 x 10^17 atoms/cm3) was demonstrated using the HHS-TDS system. This concentration level cannot be detected using UHV-TDS or secondary ion mass spectroscopy (SIMS) systems. The hydrogen detection limit of the HHS-TDS system was estimated to be ~1 x 10^16 atoms/cm3, which implies ~2 orders of magnitude higher sensitivity than that of SIMS and resonance nuclear reaction systems (~10^18 atoms/cm3). △ Less

Submitted 5 May, 2017; originally announced May 2017.

Journal ref: Rev. Sci. Instrum. 88, 053103 (2017)

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Do** in Boron-doped Diamond:11B-NMR study

Authors: H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, H. Kawarada

Abstract: We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the eff… ▽ More We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the effective carriers introduced by B(1) substitution are responsible for the superconductivity, whereas the charge neutral B(2) sites does not offer the carriers effectively. The result is also corroborated by the density of states deduced by 1/T1T measurement, indicating that the evolution of superconductivity is driven by the effective carrier introduced by substitution at B(1) site. △ Less

Submitted 6 December, 2006; v1 submitted 4 October, 2006; originally announced October 2006.

Comments: 4 pages, 6 figures, to be published in Phys. Rev. B (Brief report)

Journal ref: Phys. Rev. B 75, 033301 (2007)

Observation of superconducting gap in boron-doped diamond by laser-excited photoemission spectroscopy

Authors: K. Ishizaka, R. Eguchi, S. Tsuda, T. Yokoya, T. Kiss, T. Shimojima, T. Togashi, S. Watanabe, C. -T. Chen, C. Q. Zhang, Y. Takano, M. Nagao, I. Sakaguchi, T. Takenouchi, H. Kawarada, S. Shin

Abstract: We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a superconducting gap opening ($Δ\sim 0.78$ meV at 4.5 K). The gap feature is significantly broad and the well-defined quasiparticle peak is not recognizable even at the… ▽ More We have investigated the low energy electronic state of a boron-doped diamond thin film by the ultrahigh resolution laser-excited photoemission spectroscopy. We observed a clear shift of the leading edge below 11 K indicative of a superconducting gap opening ($Δ\sim 0.78$ meV at 4.5 K). The gap feature is significantly broad and the well-defined quasiparticle peak is not recognizable even at the lowest temperature of measurement 4.5 K. We discuss our result in terms of possible disorder effect on superconductivity in this system. △ Less

Submitted 14 April, 2006; originally announced April 2006.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. Lett. 98, 047003 (2007)

Superconductivity in Polycrystalline Diamond Thin Films

Authors: Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hitoshi Umezawa, Isao Sakaguchi, Masashi Tachiki, Hiroshi Kawarada

Abstract: Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. T… ▽ More Superconductivity was discovered in heavily boron-doped diamond thin films deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method. Advantages of the MPCVD deposited diamond are the controllability of boron concentration in a wide range, and a high boron concentration, especially in (111) oriented films, compared to that of the high-pressure high-temperature method. The superconducting transition temperatures are determined to be 8.7K for Tc onset and 5.0K for zero resistance by transport measurements. And the upper critical field is estimated to be around 7T. △ Less

Submitted 18 September, 2005; v1 submitted 20 July, 2005; originally announced July 2005.

Comments: 6 pages, 6 figures

Journal ref: Diamond & Related Materials 14 (2005) 1936 -- 1938

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Authors: Hitoshi Umezawa, Tomohiro Takenouchi, Yoshihiko Takano, Kensaku Kobayashi, Masanori Nagao, Isao Sakaguchi, Minoru Tachiki, Takeshi Hatano, Guofang Zhong, Masashi Tachiki, Hiroshi Kawarada

Abstract: The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron do** concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The… ▽ More The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron do** concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The Tc of boron-doped (111) diamond increases as the boron content increases up to the maximum incorporated concentration and is agrees with the value estimated using McMillan's equation. The advantageous Tc for (111) diamond films is due to the higher carrier concentration which exceeds its boron concentration. △ Less

Submitted 11 March, 2005; originally announced March 2005.

Comments: 22 pages, 6 figures

Holes in the valence band of superconducting boron-doped diamond film studied by soft X-ray absorption and emission spectroscopy

Authors: ** Nakamura, Tamio Oguchi, Nobuyoshi Yamada, Kazuhiko Kuroki, Kozo Okada, Yoshihiko Takano, Masanori Nagao, Isao Sakaguchi, Hiroshi Kawarada, Rupert C. C. Perera, David L. Ederer

Abstract: Carbon- and boron-2$p$ states of superconducting and non-superconducting boron-doped diamond samples are measured using soft X-ray emission and absorption spectroscopy. For the superconducting sample, a large density of hole states is observed in the valence band in addition to the states in the impurity band. The hole states in the valence band is located at about 1.3 eV below the valence band… ▽ More Carbon- and boron-2$p$ states of superconducting and non-superconducting boron-doped diamond samples are measured using soft X-ray emission and absorption spectroscopy. For the superconducting sample, a large density of hole states is observed in the valence band in addition to the states in the impurity band. The hole states in the valence band is located at about 1.3 eV below the valence band maximum regardless of the do** level, which cannot be interpreted within a simple rigid band model. Present experimental results, combined with the first principles calculations, suggest that superconductivity is to be attributed to the holes in the valence band. △ Less

Submitted 13 October, 2004; v1 submitted 6 October, 2004; originally announced October 2004.

Comments: 4 pages, 4 figures

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

Authors: Y. Takano, M. Nagao, K. Kobayashi, H. Umezawa, I. Sakaguchi, M. Tachiki, T. Hatano, H. Kawarada

Abstract: Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron do**, it becomes a p-type semiconductor, with boron acting as a charge accepto… ▽ More Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron do**, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by high pressure sintering was received with considerable surprise. Opening up new possibilities for diamond-based electrical devices, a systematic investigation of these phenomena clearly needs to be achieved. Here we show unambiguous evidence of superconductivity in a diamond thin film deposited by a chemical vapor deposition (CVD) method. Furthermore the onset of the superconducting transition is found to be 7.4K, which is higher than the reported value in ref(7) and well above helium liquid temperature. This finding establishes the superconductivity to be a universal property of boron-doped diamond, demonstrating that device application is indeed a feasible challenge. △ Less

Submitted 4 June, 2004; v1 submitted 2 June, 2004; originally announced June 2004.

Comments: 6 pages, 3 figures

Journal ref: Appl. Phys. Lett. 85, 2851 (2004)