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Activation of magnetic moments in CVD-grown graphene by annealing
Authors:
Hyungki Shin,
Ebrahim Sajadi,
Ali Khademi,
Silvia Lüscher,
Joshua A. Folk
Abstract:
Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and be…
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Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.
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Submitted 8 October, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Gate-induced superconductivity in a monolayer topological insulator
Authors:
Ebrahim Sajadi,
Tauno Palomaki,
Zaiyao Fei,
Wen** Zhao,
Philip Bement,
Christian Olsen,
Silvia Lüscher,
Xiaodong Xu,
Joshua A. Folk,
David H. Cobden
Abstract:
The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a…
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The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.
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Submitted 12 September, 2018;
originally announced September 2018.
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Alkali do** of graphene: the crucial role of high temperature annealing
Authors:
Ali Khademi,
Ebrahim Sajadi,
Pinder Dosanjh,
Doug Bonn,
Joshua A. Folk,
Alexander Stöhr,
Stiven Forti,
Ulrich Starke
Abstract:
The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of dop…
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The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of do** that could be achieved: do** saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated do** rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$.
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Submitted 2 October, 2016;
originally announced October 2016.
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Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
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Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
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Low-temperature illumination and annealing of ultra-high quality quantum wells
Authors:
Mohammad Samani,
Alexander V. Rossokhaty,
Ebrahim Sajadi,
Silvia Lüscher,
Joshua A. Folk,
John D. Watson,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dra…
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The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.
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Submitted 17 August, 2014;
originally announced August 2014.
