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Collective charge excitations between moiré-minibands in twisted WSe2 bilayers from resonant inelastic light scattering
Authors:
Nihit Saigal,
Lennart Klebl,
Hendrik Lambers,
Sina Bahmanyar,
Veljko Antić,
Dante M. Kennes,
Tim O. Wehling,
Ursula Wurstbauer
Abstract:
We establish low-temperature resonant inelastic light scattering (RILS) spectroscopy as a tool to probe the formation of a series of moiré-bands in twisted WSe_{2} bilayers by accessing collective intermoiré-band excitations (IMBE). We observe resonances in RILS spectra at energies in agreement with inter-moiré band transitions obtained from an ab-initio based continuum model. Transitions between…
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We establish low-temperature resonant inelastic light scattering (RILS) spectroscopy as a tool to probe the formation of a series of moiré-bands in twisted WSe_{2} bilayers by accessing collective intermoiré-band excitations (IMBE). We observe resonances in RILS spectra at energies in agreement with inter-moiré band transitions obtained from an ab-initio based continuum model. Transitions between the first and second inter-moiré band for a twist angle of about 8° are reported and between first and second, third and higher bands for a twist of about 3°. The signatures from IMBE for the latter highlight a strong departure from parabolic bands with flat minibands exhibiting very high density of states in accord with theory. These observations allow to quantify the transition energies at the K-point where the states relevant for correlation physics are hosted.
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Submitted 14 June, 2024; v1 submitted 22 October, 2023;
originally announced October 2023.
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Exciton manifolds in highly ambipolar doped WS2
Authors:
David Otto Tiede,
Nihit Saigal,
Hossein Ostovar,
Vera Döring,
Hendrik Lambers,
Ursula Wurstbauer
Abstract:
The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the…
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The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the single particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type do** with charge carrier densities up to 10^14 cm-2 enable to study screening phenomena and do** dependent evolution of the rich exciton manifold whose origin is controversially discussed in literature. We show that the two most prominent emission bands in photoluminescence experiments are due to the recombination of spin-forbidden and momentum-forbidden charge neutral excitons activated by phonons. The observed interband transitions are redshifted and drastically weakened under electron or hole do**. This field-effect platform is not only suitable for studying exciton manifold but is also suitable for combined optical and transport measurements on degenerately doped atomically thin quantum materials at cryogenic temperatures.
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Submitted 17 August, 2022;
originally announced August 2022.
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Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures
Authors:
Florian Sigger,
Hendrik Lambers,
Nisi Katharina,
Julian Klein,
Nihit Saigal,
Alexander W. Holleitner,
Ursula Wurstbauer
Abstract:
Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence…
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Semiconducting two-dimensional materials and their heterostructures gained a lot of interest for applications as well as fundamental studies due to their rich optical properties. Assembly in van der Waals heterostacks can significantly alter the intrinsic optical properties as well as the wavelength-dependent absorption and emission efficiencies making a direct comparison of e.g. photoluminescence intensities difficult. Here, we determine the dielectric function for the prototypical MoSe2/WSe2 heterobilayer and their individual layers. Apart from a redshift of 18 meV - 44 meV of the energetically lowest interband transitions, we find that for larger energies the dielectric function can only be described by treating the van der Waals heterobilayer as a new artificial homobilayer crystal rather than a stack of individual layers. The determined dielectric functions are applied to calculate the Michelson contrast of the individual layers and the bilayer in dependence of the oxide thickness of often used Si/SiO2 substrates. Our results highlight the need to consider the altered dielectric functions impacting the Michelson interference in the interpretation of intensities in optical measurements such as Raman scattering or photoluminescence.
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Submitted 11 July, 2022;
originally announced July 2022.
