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Engineering ultra-strong electron-phonon coupling and nonclassical electron transport in crystalline gold with nanoscale interfaces
Authors:
Shreya Kumbhakar,
Tuhin Kumar Maji,
Binita Tongbram,
Shinjan Mandal,
Shri Hari Soundararaj,
Banashree Debnath,
T. Phanindra Sai,
Manish Jain,
H. R. Krishnamurthy,
Anshu Pandey,
Arindam Ghosh
Abstract:
Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analys…
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Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analysis suffices to explain the $T$-linear electron-phonon scattering rate. In this work, we outline a new nanostructuring strategy of crystalline Au where this foundational concept of metallic transport breaks down. We show that by embedding a distributed network of ultra-small Ag nanoparticles (AgNPs) of radius $\sim1-2$ nm inside a crystalline Au shell, an unprecedented enhancement in the electron-phonon interaction, with $λ$ as high as $\approx 20$, can be achieved. This is over hundred times that of bare Au or Ag, and ten times larger than any known metal. With increasing AgNP density, the electrical resistivity deviates from $T$-linearity, and approaches a saturation to the Mott-Ioffe-Regel scale $ρ_{\mathrm{MIR}}\sim h a /e^2$ for both disorder ($T\to 0$) and phonon ($T \gg Θ_{\mathrm{D}}$)-dependent components of resistivity (here, $a=0.3$~nm, is the lattice constant of Au). This giant electron-phonon interaction, which we suggest arises from the coulomb interaction-induced coupling of conduction electrons to the localized phonon modes at the buried Au-Ag hetero-interfaces, allows experimental access to a regime of nonclassical metallic transport that has never been probed before.
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Submitted 23 May, 2024;
originally announced May 2024.
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Observation of excess resistance anomaly at resistive transitions in Ag/Au nanostructures
Authors:
Phanibhusan S Mahapatra,
Subham Kumar Saha,
Rekha Mahadevu,
Saurav Islam,
Pritha Mondal,
Shreya Kumbhakar,
T. Phanindra Sai,
Satish Patil,
U. Chandni,
Anshu Pandey,
Arindam Ghosh
Abstract:
The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a…
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The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a single device. The excess resistance regime was observed in about 10% of the devices, and extends from ~ 10 - 100 K. Application of magnetic field of 9 T was found to partially suppress the excess resistance. From the critical current behavior, as well as negative differential resistance in the current-voltage characteristics, we discuss the possibility of interacting phase slip centers and alternate physical scenarios that may cause the excess resistance in our system.
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Submitted 11 December, 2019;
originally announced December 2019.
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Current-voltage characteristics in Ag/Au nanostructures at resistive transitions
Authors:
Saurav Islam,
Rekha Mahadevu,
Subham Kumar Saha,
Phanibhusan Singha Mahapatra,
Biswajit Bhattacharyya,
Dev Kumar Thapa,
T. Phanindra Sai,
Satish Patil,
Anshu Pandey,
Arindam Ghosh
Abstract:
Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transi…
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Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transition remains unexplored. Here we report the $I-V$ characteristics at zero magnetic field of a prototypical Ag/Au nanocluster film close to its resistivity transition at the critical temperature $T_{C}$ of $\approx160$ K. The $I-V$ characteristics become strongly hysteretic close to the transition and exhibit a temperature-dependent critical current scale beyond which the resistance increases rapidly. Intriguingly, the non-equilibrium transport regime consists of a series of nearly equispaced resistance steps when the drive current exceeds the critical current. We have discussed the similarity of these observations with resistive transitions in ultra-thin superconducting wires via phase slip centres.
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Submitted 7 June, 2019; v1 submitted 5 June, 2019;
originally announced June 2019.
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Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene
Authors:
Md. Ali Aamir,
Paritosh Karnatak,
Aditya Jayaraman,
T. Phanindra Sai,
T. V. Ramakrishnan,
Rajdeep Sensarma,
Arindam Ghosh
Abstract:
The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarith…
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The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarithmically for channel length up to L/$ξ$ ${\approx}$ 20, where $ξ$ is the localization length. This 'marginal' self averaging, and the corresponding dependence of <ln g> on L, suggest that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where $ξ$ ${\approx}$ 0.5${\pm}$0.1 $μ$m was found to be much longer than that expected from the bulk bandgap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.
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Submitted 20 February, 2019;
originally announced February 2019.
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Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures
Authors:
Dev Kumar Thapa,
Saurav Islam,
Subham Kumar Saha,
Phanibhusan Singha Mahapatra,
Biswajit Bhattacharyya,
T. Phanindra Sai,
Rekha Mahadevu,
Satish Patil,
Arindam Ghosh,
Anshu Pandey
Abstract:
The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient temperature and pressure conditions in films and pellets of a nanostructured material that is composed of silver particles embedded into a gold matrix. Upon coolin…
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The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient temperature and pressure conditions in films and pellets of a nanostructured material that is composed of silver particles embedded into a gold matrix. Upon cooling below a sample-specific temperature scale ($T_{C}$) as high as $286$ K, the film resistance drops below $\sim 2μΩ$, being limited by measurement uncertainty. The corresponding resistivity ($\sim 10^{-12}$ $Ω$.m) is at least four orders of magnitude below that of elemental noble metals, such as gold, silver or copper. Furthermore, the samples become strongly diamagnetic below $T_{C}$, with volume susceptibilities as low as -0.056. We additionally describe methods to tune $T_{C}$ to temperatures much higher than room temperature.
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Submitted 28 May, 2019; v1 submitted 23 July, 2018;
originally announced July 2018.
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Current crowding mediated large contact noise in graphene field-effect transistors
Authors:
Paritosh Karnatak,
T. Phanindra Sai,
Srijit Goswami,
Subhamoy Ghatak,
Sanjeev Kaushal,
Arindam Ghosh
Abstract:
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact…
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The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors, confirms that the contacts dominate the measured resistance noise in all graphene field effect transistors in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two dimensional material-based electronic devices.
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Submitted 1 February, 2017; v1 submitted 3 November, 2016;
originally announced November 2016.
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A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids
Authors:
Kallol Roy,
Medini Padmanabhan,
Srijit Goswami,
T. Phanindra Sai,
Gopalakrishnan Ramalingam,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sens…
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Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.
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Submitted 5 September, 2013;
originally announced September 2013.
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Observation of a Large Photo-response in a Single Nanowire (Diameter ~30 nm) of Charge Transfer Complex Cu:TCNQ
Authors:
Rabaya Basori,
Kaustuv Das,
T. Phanindra. Sai,
Prashant Kumar,
K. S. Narayan,
Arup K. Raychaudhuri
Abstract:
We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers.…
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We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers. We have quantitatively analyzed the bias dependent photocurrent by a model of two back to back Schottky diodes connected by a series resistance. The observation shows that the large photoresponse of the device primarily occurs due to the reduction of the barrier at the contact regions due to illumination along with the photoconductive contribution. There is also a bias driven reduction of the nanowire resistance that is a unique feature for the material.
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Submitted 18 October, 2012;
originally announced October 2012.
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Electrochemical fabrication of ultralow noise metallic nanowires with hcp crystalline lattice
Authors:
Amrita Singh,
T. Phanindra Sai,
Arindam Ghosh
Abstract:
We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six…
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We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six orders of magnitude lower than that in the conventional fcc nanowires of the same diameter. We suggest that motion of dislocations is probably the primary source of electrical noise in metallic nanowires, which is strongly diminished in hcp crystals.
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Submitted 4 November, 2008;
originally announced November 2008.
