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Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer
Authors:
D. Yavorskiy,
Y. Ivonyak,
D. But,
K. Karpierz,
A. Krajewska,
M. Haras,
P. Sai,
M. Dub,
A. Kazakov,
G. Cywiński,
W. Knap,
J. Łusakowski
Abstract:
HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p…
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HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality HgCdTe MBE-grown epitaxial layers with x ~ x_c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10 % in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers...
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Submitted 23 June, 2024;
originally announced June 2024.
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Engineering ultra-strong electron-phonon coupling and nonclassical electron transport in crystalline gold with nanoscale interfaces
Authors:
Shreya Kumbhakar,
Tuhin Kumar Maji,
Binita Tongbram,
Shinjan Mandal,
Shri Hari Soundararaj,
Banashree Debnath,
T. Phanindra Sai,
Manish Jain,
H. R. Krishnamurthy,
Anshu Pandey,
Arindam Ghosh
Abstract:
Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analys…
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Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analysis suffices to explain the $T$-linear electron-phonon scattering rate. In this work, we outline a new nanostructuring strategy of crystalline Au where this foundational concept of metallic transport breaks down. We show that by embedding a distributed network of ultra-small Ag nanoparticles (AgNPs) of radius $\sim1-2$ nm inside a crystalline Au shell, an unprecedented enhancement in the electron-phonon interaction, with $λ$ as high as $\approx 20$, can be achieved. This is over hundred times that of bare Au or Ag, and ten times larger than any known metal. With increasing AgNP density, the electrical resistivity deviates from $T$-linearity, and approaches a saturation to the Mott-Ioffe-Regel scale $ρ_{\mathrm{MIR}}\sim h a /e^2$ for both disorder ($T\to 0$) and phonon ($T \gg Θ_{\mathrm{D}}$)-dependent components of resistivity (here, $a=0.3$~nm, is the lattice constant of Au). This giant electron-phonon interaction, which we suggest arises from the coulomb interaction-induced coupling of conduction electrons to the localized phonon modes at the buried Au-Ag hetero-interfaces, allows experimental access to a regime of nonclassical metallic transport that has never been probed before.
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Submitted 23 May, 2024;
originally announced May 2024.
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Goal-conditioned reinforcement learning for ultrasound navigation guidance
Authors:
Abdoul Aziz Amadou,
Vivek Singh,
Florin C. Ghesu,
Young-Ho Kim,
Laura Stanciulescu,
Harshitha P. Sai,
Puneet Sharma,
Alistair Young,
Ronak Rajani,
Kawal Rhode
Abstract:
Transesophageal echocardiography (TEE) plays a pivotal role in cardiology for diagnostic and interventional procedures. However, using it effectively requires extensive training due to the intricate nature of image acquisition and interpretation. To enhance the efficiency of novice sonographers and reduce variability in scan acquisitions, we propose a novel ultrasound (US) navigation assistance me…
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Transesophageal echocardiography (TEE) plays a pivotal role in cardiology for diagnostic and interventional procedures. However, using it effectively requires extensive training due to the intricate nature of image acquisition and interpretation. To enhance the efficiency of novice sonographers and reduce variability in scan acquisitions, we propose a novel ultrasound (US) navigation assistance method based on contrastive learning as goal-conditioned reinforcement learning (GCRL). We augment the previous framework using a novel contrastive patient batching method (CPB) and a data-augmented contrastive loss, both of which we demonstrate are essential to ensure generalization to anatomical variations across patients. The proposed framework enables navigation to both standard diagnostic as well as intricate interventional views with a single model. Our method was developed with a large dataset of 789 patients and obtained an average error of 6.56 mm in position and 9.36 degrees in angle on a testing dataset of 140 patients, which is competitive or superior to models trained on individual views. Furthermore, we quantitatively validate our method's ability to navigate to interventional views such as the Left Atrial Appendage (LAA) view used in LAA closure. Our approach holds promise in providing valuable guidance during transesophageal ultrasound examinations, contributing to the advancement of skill acquisition for cardiac ultrasound practitioners.
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Submitted 22 May, 2024; v1 submitted 2 May, 2024;
originally announced May 2024.
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Inflationary cross-correlations of a non-minimal spectator and their soft limits
Authors:
P. Jishnu Sai,
Rajeev Kumar Jain
Abstract:
Light spectator fields may not be dynamically relevant for the inflationary phase of the early universe, but they can still induce interesting imprints on cosmological observables. In this paper, we compute the cross-correlations of the inflationary perturbations, both scalar and tensor, with the fluctuations of a non-minimally interacting spectator field using the in-in formalism and investigate…
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Light spectator fields may not be dynamically relevant for the inflationary phase of the early universe, but they can still induce interesting imprints on cosmological observables. In this paper, we compute the cross-correlations of the inflationary perturbations, both scalar and tensor, with the fluctuations of a non-minimally interacting spectator field using the in-in formalism and investigate the consistency relations associated with such cross-correlations. In particular, the scalar consistency relation is derived semi-classically by generalizing the consistency relation obtained earlier for cosmic magnetic fields. Notably, we find that the direct coupling between the inflaton and the spectator solely determines the local non-linearity parameter associated with the scalar cross-correlation during slow-roll inflation, regardless of the specific form of the Lagrangian for the spectator field. Further, we calculate the tensor correlation with spectator fluctuations, explore the associated soft limits, and demonstrate the violation of the conventional tensor consistency relation with a non-minimal derivative coupling. Our analysis stresses that the violation of tensor consistency relations does not necessarily imply the superhorizon evolution of tensor modes. Instead, such violations can arise due to the non-minimal derivative coupling of the spectator field to gravity. Finally, we discuss the wider implications of our results in the context of cosmological soft theorems.
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Submitted 12 September, 2023; v1 submitted 14 July, 2023;
originally announced July 2023.
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Strong transient magnetic fields induced by THz-driven plasmons in graphene disks
Authors:
Jeong Woo Han,
Pavlo Sai,
Dmytro But,
Ece Uykur,
Stephan Winnerl,
Gagan Kumar,
Matthew L. Chin,
Rachael L. Myers-Ward,
Matthew T. Dejarld,
Kevin M. Daniels,
Thomas E. Murphy,
Wojciech Knap,
Martin Mittendorff
Abstract:
Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carri…
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Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2.
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Submitted 10 July, 2023;
originally announced July 2023.
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Electrical Tuning of Terahertz Plasmonic Crystal Phases
Authors:
P. Sai,
V. V. Korotyeyev,
M. Dub,
M. Słowikowski,
M. Filipiak,
D. B. But,
Yu. Ivonyak,
M. Sakowicz,
Yu. M. Lyaschuk,
S. M. Kukhtaruk,
G. Cywiński,
W. Knap
Abstract:
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structu…
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We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structures can be explained only within the framework of the plasmonic crystal model. We identify two different plasmonic crystal phases. The first is the delocalized phase, where THz radiation interacts with the entire grating-gate structure that is realized at a weakly modulated 2D electron gas (2DEG) regime. In the second, the localized phase, THz radiation interacts only with the ungated portions of the structure. This phase is achieved by fully depleting the gated regions, resulting in strong modulation. By gate-controlling of the modulation degree, we observe a continuous transition between these phases. We also discovered that unexpectedly the resonant plasma frequencies of ungated parts (in the localized phase) still depend on the gate voltage. We attribute this phenomenon to the specific depletion of the conductive profile in the ungated region of the 2DEG, the so-called edge gating effect. Although we study a specific case of plasmons in AlGaN/GaN grating-gate structures, our results have a general character and are applicable to any other semiconductor-based plasmonic crystal structures. Our work represents the first demonstration of an electrically tunable transition between different phases of THz plasmonic crystals, which is a crucial step towards a deeper understanding of THz plasma physics and the development of all-electrically tunable devices for THz optoelectronics.
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Submitted 6 May, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
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On the primordial correlation of gravitons with gauge fields
Authors:
Rajeev Kumar Jain,
P. Jishnu Sai,
Martin S. Sloth
Abstract:
We calculate the primordial correlation of gravitons with an abelian gauge field non-minimally coupled through a dynamical dilaton field or a volume moduli during inflation in the early universe. In particular, we compute the cross-correlation of a tensor mode with two gauge field modes and the corresponding correlation functions for the associated magnetic and electric fields using the in-in form…
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We calculate the primordial correlation of gravitons with an abelian gauge field non-minimally coupled through a dynamical dilaton field or a volume moduli during inflation in the early universe. In particular, we compute the cross-correlation of a tensor mode with two gauge field modes and the corresponding correlation functions for the associated magnetic and electric fields using the in-in formalism. Moreover, using semi-classical methods, we show that the three-point cross-correlation functions satisfy new consistency relations (soft theorems) in the squeezed limit. Our findings exhibit a complete agreement of the full in-in results with the new consistency relations. An interesting consequence of our scenario is the possibility of a novel correlation of the primordial tensor mode with the primordial curvature perturbation induced by higher order quantum gravity corrections. The anisotropic background created by long wavelength gauge field modes makes this correlation function non-vanishing. Finally, we discuss how these three-point correlation functions are imprinted on cosmological observables today and the applications to scenarios of inflationary magnetogenesis.
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Submitted 15 February, 2022; v1 submitted 24 August, 2021;
originally announced August 2021.
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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: manifestation of spin-orbit band splitting
Authors:
P. Sai,
S. O. Potashin,
M. Szola,
D. Yavorskiy,
G. Cywinski,
P. Prystawko,
J. Lusakowski,
S. D. Ganichev,
S. Rumyantsev,
W. Knap,
V. Yu. Kachorovskii
Abstract:
We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and a…
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We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and are in phase with the resistivity oscillations. Remarkably, their amplitude is greatly enhanced as compared to the ratchet current at zero magnetic field, and the envelope of these oscillations exhibits large beatings as a function of the magnetic field. We demonstrate that the beatings are caused by the spin-orbit splitting of the conduction band. We develop a theory which gives a good qualitative explanation of all experimental observations and allows us to extract the spin-orbit splitting constant α_{\rm SO}= 7.5 \pm 1.5 meV \unicode{x212B}. We also discuss how our results are modified by plasmonic effects and show that these effects become more pronounced with decreasing the period of the gating gate structures down to sub-microns.
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Submitted 25 February, 2021;
originally announced February 2021.
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Observation of excess resistance anomaly at resistive transitions in Ag/Au nanostructures
Authors:
Phanibhusan S Mahapatra,
Subham Kumar Saha,
Rekha Mahadevu,
Saurav Islam,
Pritha Mondal,
Shreya Kumbhakar,
T. Phanindra Sai,
Satish Patil,
U. Chandni,
Anshu Pandey,
Arindam Ghosh
Abstract:
The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a…
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The resistive transition in nanocomposite films of silver (Ag) nanoclusters of ~ 1 nm diameter embedded in gold (Au) matrix exhibits an anomalous resistance peak at the onset of the transition, even for transition temperatures as high as 260 K. The maximum value of the resistance ranges between ~ 30% - 300% above that of the normal state depending on devices as well as lead configuration within a single device. The excess resistance regime was observed in about 10% of the devices, and extends from ~ 10 - 100 K. Application of magnetic field of 9 T was found to partially suppress the excess resistance. From the critical current behavior, as well as negative differential resistance in the current-voltage characteristics, we discuss the possibility of interacting phase slip centers and alternate physical scenarios that may cause the excess resistance in our system.
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Submitted 11 December, 2019;
originally announced December 2019.
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Current-voltage characteristics in Ag/Au nanostructures at resistive transitions
Authors:
Saurav Islam,
Rekha Mahadevu,
Subham Kumar Saha,
Phanibhusan Singha Mahapatra,
Biswajit Bhattacharyya,
Dev Kumar Thapa,
T. Phanindra Sai,
Satish Patil,
Anshu Pandey,
Arindam Ghosh
Abstract:
Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transi…
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Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transition remains unexplored. Here we report the $I-V$ characteristics at zero magnetic field of a prototypical Ag/Au nanocluster film close to its resistivity transition at the critical temperature $T_{C}$ of $\approx160$ K. The $I-V$ characteristics become strongly hysteretic close to the transition and exhibit a temperature-dependent critical current scale beyond which the resistance increases rapidly. Intriguingly, the non-equilibrium transport regime consists of a series of nearly equispaced resistance steps when the drive current exceeds the critical current. We have discussed the similarity of these observations with resistive transitions in ultra-thin superconducting wires via phase slip centres.
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Submitted 7 June, 2019; v1 submitted 5 June, 2019;
originally announced June 2019.
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Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene
Authors:
Md. Ali Aamir,
Paritosh Karnatak,
Aditya Jayaraman,
T. Phanindra Sai,
T. V. Ramakrishnan,
Rajdeep Sensarma,
Arindam Ghosh
Abstract:
The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarith…
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The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarithmically for channel length up to L/$ξ$ ${\approx}$ 20, where $ξ$ is the localization length. This 'marginal' self averaging, and the corresponding dependence of <ln g> on L, suggest that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where $ξ$ ${\approx}$ 0.5${\pm}$0.1 $μ$m was found to be much longer than that expected from the bulk bandgap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.
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Submitted 20 February, 2019;
originally announced February 2019.
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Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures
Authors:
Dev Kumar Thapa,
Saurav Islam,
Subham Kumar Saha,
Phanibhusan Singha Mahapatra,
Biswajit Bhattacharyya,
T. Phanindra Sai,
Rekha Mahadevu,
Satish Patil,
Arindam Ghosh,
Anshu Pandey
Abstract:
The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient temperature and pressure conditions in films and pellets of a nanostructured material that is composed of silver particles embedded into a gold matrix. Upon coolin…
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The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient temperature and pressure conditions in films and pellets of a nanostructured material that is composed of silver particles embedded into a gold matrix. Upon cooling below a sample-specific temperature scale ($T_{C}$) as high as $286$ K, the film resistance drops below $\sim 2μΩ$, being limited by measurement uncertainty. The corresponding resistivity ($\sim 10^{-12}$ $Ω$.m) is at least four orders of magnitude below that of elemental noble metals, such as gold, silver or copper. Furthermore, the samples become strongly diamagnetic below $T_{C}$, with volume susceptibilities as low as -0.056. We additionally describe methods to tune $T_{C}$ to temperatures much higher than room temperature.
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Submitted 28 May, 2019; v1 submitted 23 July, 2018;
originally announced July 2018.
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Current crowding mediated large contact noise in graphene field-effect transistors
Authors:
Paritosh Karnatak,
T. Phanindra Sai,
Srijit Goswami,
Subhamoy Ghatak,
Sanjeev Kaushal,
Arindam Ghosh
Abstract:
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact…
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The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors, confirms that the contacts dominate the measured resistance noise in all graphene field effect transistors in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two dimensional material-based electronic devices.
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Submitted 1 February, 2017; v1 submitted 3 November, 2016;
originally announced November 2016.
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A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids
Authors:
Kallol Roy,
Medini Padmanabhan,
Srijit Goswami,
T. Phanindra Sai,
Gopalakrishnan Ramalingam,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sens…
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Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.
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Submitted 5 September, 2013;
originally announced September 2013.
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Observation of a Large Photo-response in a Single Nanowire (Diameter ~30 nm) of Charge Transfer Complex Cu:TCNQ
Authors:
Rabaya Basori,
Kaustuv Das,
T. Phanindra. Sai,
Prashant Kumar,
K. S. Narayan,
Arup K. Raychaudhuri
Abstract:
We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers.…
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We report for the first time large photoresponse in a single NW of the charge transfer complex Cu:TCNQ. We fabricate a metal-semiconductor-metal device with a single NW and focus ion beam deposited Pt. We observe large photocurrent even at zero bias. The spectral dependence of the photoresponse follows the main absorption at ~ 405 nm which has the primarily responsible for photogenerated carriers. We have quantitatively analyzed the bias dependent photocurrent by a model of two back to back Schottky diodes connected by a series resistance. The observation shows that the large photoresponse of the device primarily occurs due to the reduction of the barrier at the contact regions due to illumination along with the photoconductive contribution. There is also a bias driven reduction of the nanowire resistance that is a unique feature for the material.
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Submitted 18 October, 2012;
originally announced October 2012.
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Electrochemical fabrication of ultralow noise metallic nanowires with hcp crystalline lattice
Authors:
Amrita Singh,
T. Phanindra Sai,
Arindam Ghosh
Abstract:
We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six…
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We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six orders of magnitude lower than that in the conventional fcc nanowires of the same diameter. We suggest that motion of dislocations is probably the primary source of electrical noise in metallic nanowires, which is strongly diminished in hcp crystals.
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Submitted 4 November, 2008;
originally announced November 2008.
