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A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances
Authors:
Sameer Kumar Mallik,
Roshan Padhan,
Suman Roy,
Mousam Charan Sahu,
Sandhyarani Sahoo,
Satyaprakash Sahoo
Abstract:
Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode…
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Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode arrays on the 2D semiconductors also attract attention towards large-scale integration for commercial applications. Here, we demonstrate a facile PMMA-assisted etching-free one-step approach to transfer both 2D channels and metal electrodes without damaging the contact region. The direct device transfer (DDT) technique enables residue-free monolayer MoS2 as channel material towards achieving do**-free intrinsic transistors with enhanced performances. The crystalline quality, strain relaxation, and interfacial coupling effects are studied using Raman and photoluminescence spectra with spatial map**. Post device transfer, a reduced pinning effect is observed by the effective modulation of gate tunable drain currents in MoS2 transistors at room temperature. Furthermore, the extracted Schottky barrier heights, temperature dependence of threshold voltage shifts, hysteresis evolution, and mobility enhancements validates the improved transistor performances in transferred devices. The proposed DDT method can be utilized to directly transfer array of devices of 2D materials and heterostructures skip** various cumbersome steps in between and hence could offer high performance reliable electronic applications.
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Submitted 15 September, 2023;
originally announced September 2023.
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Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning
Authors:
Sameer Kumar Mallik,
Roshan Padhan,
Mousam Charan Sahu,
Suman Roy,
Gopal K Pradhan,
Prasana Kumar Sahoo,
Saroj Prasad Dash,
Satyaprakash Sahoo
Abstract:
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards develo** alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at…
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The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards develo** alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning.
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Submitted 3 May, 2023;
originally announced May 2023.
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Fast transient charge trap** in salt-aided CVD synthesized monolayer MoS2 field-effect transistor
Authors:
Sameer Kumar Mallik,
Sandhyarani Sahoo,
Mousam Charan Sahu,
Sanjeev K Gupta,
Saroj Prasad Dash,
Rajeev Ahuja,
Satyaprakash Sahoo
Abstract:
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances…
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Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances. Here, we conduct a meticulous investigation of the fast transient charge trap** mechanisms in field-effect transistors (FETs) of high-quality CVD MoS2 monolayers grown by a salt-driven method. To unfold the intrinsic transistor behavior, an amplitude sweep pulse I~V methodology is adapted with varying pulse widths. A significant increase in the field-effect mobility up to ~100% is achieved along with a hysteresis-free transfer characteristic by applying the shortest pulse. Moreover, to correlate these results, a single pulse time-domain drain current analysis is carried out to unleash the fast and slow transient charge trap** phenomena. Furthermore, rigorous density functional theory (DFT) calculations are implemented to inspect the effects of the Schottky barrier and metal-induced gap states between drain/source electrode and MoS2 for the superior carrier transport. Our findings on the controllable transient charge trap** mechanisms for estimation of intrinsic field-effect mobility and hysteresis-free transfer characteristic in salt-assisted CVD-grown MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems.
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Submitted 5 October, 2020;
originally announced October 2020.
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Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy
Authors:
Sandhyarani Sahoo,
Sameer Kumar Mallik,
Mousam Charan Sahu,
Anjana Joseph,
Bibhudutta Rout,
Gopal K. Pradhan,
Satyaprakash Sahoo
Abstract:
Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this…
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Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K.
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Submitted 26 February, 2020;
originally announced February 2020.
