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Strain Induced Relaxor-type Ferroelectricity Near Room Temperature in Delafossite CuCrO2
Authors:
Preeti Pokhriyal,
Ashok Bhakar,
Parasmani Rajput,
M. N. Singh,
Pankaj Sagdeo,
N. P. Lalla,
A. K. Sinha,
Archna Sagdeo
Abstract:
Polycrystalline samples of CuCrO2 were synthesized by solid state reaction method. Temperature dependent dielectric measurements, synchrotron x-ray diffraction (SXRD), pyroelectric current and Raman measurements have been performed on these samples. Evidences of the presence of relaxor type ferroelectricity, which otherwise have gone unnoticed in CuCrO2 system (a member of delafossite family) near…
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Polycrystalline samples of CuCrO2 were synthesized by solid state reaction method. Temperature dependent dielectric measurements, synchrotron x-ray diffraction (SXRD), pyroelectric current and Raman measurements have been performed on these samples. Evidences of the presence of relaxor type ferroelectricity, which otherwise have gone unnoticed in CuCrO2 system (a member of delafossite family) near room temperature, have been presented. Presence of broad maximum in dielectric permittivity and its frequency dispersion indicates relaxor-type ferroelectricity in CuCrO2 near room temperature. Careful analysis of temperature dependent SXRD data and Raman spectroscopic data indicates that the distorted CrO6 octahdera, is giving rise to strain in the sample. Due to this strain, polar regions are forming in an otherwise non-polar matrix, which is giving rise to relaxor type ferroelectricity in the sample. Regularization of CrO6 octahedra and disappearance of disorder induced peak in Raman spectra at high temperatures could be the reason behind observed dielectric anomaly in this sample. Present investigations propose that relaxor type ferroelectricity near room temperature is an inherent property of the CuCrO2 system, making it a fascinating material to be explored further.
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Submitted 16 January, 2020;
originally announced January 2020.
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Generalization of Phonon Confinement Model for Interpretation of Raman Line-Shape from Nano-Silicon
Authors:
Manushree Tanwar,
Priyanka Yogi,
Simran Lambora,
Suryakant Mishra,
Shailendra K. Saxena,
Pankaj R Sagdeo,
Alexander S. Krylov,
Rajesh Kumar
Abstract:
A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon confinement model incorporates two basic considerations, phonon momentum conservation and shift in zone centre phonon frequency. After incorporation of the abov…
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A comparative analysis of two Raman line-shape functions has been carried out to validate the true representation of experimentally observed Raman scattering data for semiconducting nanomaterials. A modified form of already existing phonon confinement model incorporates two basic considerations, phonon momentum conservation and shift in zone centre phonon frequency. After incorporation of the above mentioned two factors, a rather symmetric Raman line-shape is generated which is in contrary to the usual asymmetric Raman line-shapes obtained from nanostructured semiconductor. By fitting an experimentally observed Raman scattering data from silicon nanostructures, prepared by metal induced etching, it can be established that the Raman line-shape obtained within the framework of phonon confinement model is a true representative Raman line-shape of sufficiently low dimensions semiconductors.
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Submitted 30 November, 2017;
originally announced November 2017.
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Three-fold Constructive Perturbation for Significant Enhancement in Field Emission from Nickel Oxide Nano-Thorn
Authors:
Suryakant Mishra,
Priyanka Yogi,
Shailendra K. Saxena,
J. Jayabalan,
P. R. Sagdeo,
Rajesh Kumar
Abstract:
A power efficient and stable field emission (FE) has been reported here from Nickel Oxide nanostructures. Modification in device geometry and surface micro- (nano-) structure has been found helpful in addressing the bottlenecks in achieving an efficient FE . In terms of threshold and turn on fields, three orders of magnitude better electron FE has been observed in the nickel oxide nanopetals (NiO-…
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A power efficient and stable field emission (FE) has been reported here from Nickel Oxide nanostructures. Modification in device geometry and surface micro- (nano-) structure has been found helpful in addressing the bottlenecks in achieving an efficient FE . In terms of threshold and turn on fields, three orders of magnitude better electron FE has been observed in the nickel oxide nanopetals (NiO-NPs) fabricated using simple hydrothermal technique. Uniform and vertically aligned NiO-NPs structures, grown on very flat conducting surface (FTO coated glass), show sharp needles like structures on the top edges of the flakes. These ultrafine structures play the main role in field emission to start at such a low turn on fields. The FE data (J-E plot) has been fitted with Fowler-Nordheim (FN) equation to estimate threshold field value and field enhancement factor which are found to be 3 V/mm and $\sim$ 5 $\times$ 10$^6$ respectively.
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Submitted 6 May, 2017;
originally announced May 2017.
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Tent--Shaped Surface Morphologies of Silicon: Texturization by Metal Induced Etching
Authors:
Priyanka Yogi,
Deepika Poonia,
Suryakant Mishra,
Shailendra K. Saxena,
Swarup Roy,
Pankaj R Sagdeo,
Rajesh Kumar
Abstract:
Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced chemical etching. The combinations of n--Si/Ag and p--Si/Au form ohmic contact and result in the same texturization on the Si surface on porosification where tent--s…
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Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced chemical etching. The combinations of n--Si/Ag and p--Si/Au form ohmic contact and result in the same texturization on the Si surface on porosification where tent--shaped morphology has been observed consistently with n-- and p--type Si. Whereas, porosification result in different surface texturization for other two combinations (p--Si/Ag and n--Si/Au) where Schottkey contacts are formed. Quantitative analysis have been done using ImageJ to process the SEM images of SiNS, which confirms that the tent like SiNS are formed when etching of silicon wafer is done by AgNPs and AuNPs on n and p type Si wafer respectively. These easily prepared sharp tent--shaped Si NSs can be used for enhanced field emission applications.
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Submitted 7 May, 2017;
originally announced May 2017.
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Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3
Authors:
Hari Mohan Rai,
Shailendra K. Saxena,
Vikash Mishra,
Rajesh Kumar,
Pankaj R. Sagdeo
Abstract:
We report an observation of room temperature magnetodielectric (RTMD) effect in Mn doped LaGaO3. Results of frequency dependent magnetoresistance (FDMR) measurements discards the possibility of any magnetoresistive contribution in the observed MD effect. The intrinsic nature of MD coupling has been validated/evidenced by means of magnetic field dependent Raman spectroscopy and explained in terms o…
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We report an observation of room temperature magnetodielectric (RTMD) effect in Mn doped LaGaO3. Results of frequency dependent magnetoresistance (FDMR) measurements discards the possibility of any magnetoresistive contribution in the observed MD effect. The intrinsic nature of MD coupling has been validated/evidenced by means of magnetic field dependent Raman spectroscopy and explained in terms of modified volume strain governed by magnetic field induced rerotation of spin coupled Mn-orbitals. Ultimately, present RTMD effect is attributed to magneto-compression/magnetostriction associated with spin-phonon coupling as evidenced in the form of magnetic field induced hardening of symmetric stretching (SS) MnO6 octahedral Raman modes. Presently studied Mn doped LaGaO3 can be a candidate for magnetodielectric applications.
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Submitted 29 April, 2017;
originally announced May 2017.
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Metastable behavior of Urbach tail states in BaTiO3 across phase transition
Authors:
Vikash Mishra,
Archna Sagdeo,
Kamal Warshi,
Hari Mohan Rai,
Shailendra K. Saxena,
Rajesh Kumar,
P. R. Sagdeo
Abstract:
The temperature dependent diffuse reflectance spectroscopy measurements were carried out on the polycrystalline samples of BaTiO3 across the tetragonal to cubic structural phase transition temperature. The values of various optical parameters such as band gap (Eg), Urbach energy (EU) and Urbach focus (E0) are estimated in the range of 300 K to 470K. It is observed that near structural phase transi…
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The temperature dependent diffuse reflectance spectroscopy measurements were carried out on the polycrystalline samples of BaTiO3 across the tetragonal to cubic structural phase transition temperature. The values of various optical parameters such as band gap (Eg), Urbach energy (EU) and Urbach focus (E0) are estimated in the range of 300 K to 470K. It is observed that near structural phase transition temperatures there exists two value of E0, suggesting presence of electronic heterogeneity over wide temperature range. Further near transition temperature EU shows metastability i.e. value of EU at temperature T is not constant but is a function of time (t). Interestingly it is observed that the ratio of EU(t=0)/ EU(t = tm), is almost remains constant at 295 K (pure tetragonal phase) and at 450 K (pure cubic phase), whereas this ratio shows decreasing behavior close to structural phase transition temperature, which confirms the presence of electronic metastibility in the pure BaTiO3. The observed metastibility can be fitted with the stretch exponents relaxation behavior, suggesting the presence of dynamic heterogeneous electronic disorder present in the sample across the transition. Further it appears that these metastable Urbach tail states (electronic disorder) may couple with the soft phonon modes and responsible for the observed terahertz dielectric relaxation (Phys. Rev. Lett. 101, 167402 (2008)). Further; present studies suggest that the optical studies appear to be more sensitive to probe the disorder/heterogeneity present in the sample.
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Submitted 20 December, 2016;
originally announced December 2016.
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In-situ spectroscopic studies of viologen based electrochromic device
Authors:
Suryakant Mishra,
Haardik Pandey,
Priyanka Yogi,
Shailendra K. Saxena,
Swaroop Roy,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
Fabrication and operation of simple solid state electrochromic devices using ethyl viologen diperchlorate in a polymer matrix is presented here. In-situ Raman and transmission/absorption studies have been done to establish the origin of bias induced color change, between a transparent and navy blue color, in the electrochromic device. The origin of bias induced color change has been attributed to…
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Fabrication and operation of simple solid state electrochromic devices using ethyl viologen diperchlorate in a polymer matrix is presented here. In-situ Raman and transmission/absorption studies have been done to establish the origin of bias induced color change, between a transparent and navy blue color, in the electrochromic device. The origin of bias induced color change has been attributed to the bias induced redox switching between its viologen dication and free redicle forms. Fundamental reason behind colour changes of viologen molecule has been established. In-situ UV-Vis spectra reveals that the navy blue color of the device under biased condition is not due to increase in the transparency corresponding to blue wavelength but due to suppression of the transparency corresponding to the complementary colors. Absorption modulation has been reported from the device with good ON/OFF contrast of the device.
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Submitted 15 July, 2016;
originally announced July 2016.
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Optical bandgap and bowing parameter for Fe doped LaGaO3
Authors:
P. R. Sagdeo,
Preetam Singh,
Hari Mohan Rai,
Rajesh Kumar,
Archna Sagdeo,
Parasmani Rajput
Abstract:
The polycrystalline samples of LaGa1-xFexO3 have been prepared by standard solid state reaction route. The phase purity of the prepared samples is confirmed by powder xray diffraction experiments followed by Rietveld analysis. It has been observed that the variation of lattice parameters is governed by Vegards law. The optical band gap of these samples is estimated using diffuse reflectance analys…
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The polycrystalline samples of LaGa1-xFexO3 have been prepared by standard solid state reaction route. The phase purity of the prepared samples is confirmed by powder xray diffraction experiments followed by Rietveld analysis. It has been observed that the variation of lattice parameters is governed by Vegards law. The optical band gap of these samples is estimated using diffuse reflectance analysis and it is observed that the optical gap systematically decreases with Fe do** from 3.62 eV and attains the saturation value of approximately 1.9 eV at x equal to 0.4. The value of the bowing parameter b for the prepared solid solution LaGa1-xFexO3 is estimated to be 3.8eV.The xray absorption near edge spectroscopy XANES suggests that the Fe is in mixed valence state in all prepared samples and these mixed states of Fe due to offstoichiometry acts like electron do** in LaGa1-xFexO3 and thereby results in the reduction in the effective band gap. Our results may be useful to design the LaGaO3based light emitting diodes and new generation of semiconductor photo-detectors.
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Submitted 16 March, 2016;
originally announced March 2016.
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Comment on Half metallicity along the edge of zigzag boron nitride nanoribbons (Phys. Rev. B 78, 205415 (2008)
Authors:
Hari Mohan Rai,
Rajesh Kumar,
Pankaj R. Sagdeo,
Neeraj K. Jaiswal,
Pankaj Srivastava
Abstract:
We would like to comment that the prediction of Half-mtallicity in only B edge H-passivated zigzag boron nitride nanoribbons (ZBNNR-BH), by Zheng et al.1, is not correct as their interpretation is erroneous. Since it is well known that for a material, to be a half-metal, as a primary condition one type of spin channels or bands (either spin up or spin down) are conducting and the opposite ones are…
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We would like to comment that the prediction of Half-mtallicity in only B edge H-passivated zigzag boron nitride nanoribbons (ZBNNR-BH), by Zheng et al.1, is not correct as their interpretation is erroneous. Since it is well known that for a material, to be a half-metal, as a primary condition one type of spin channels or bands (either spin up or spin down) are conducting and the opposite ones are insulating. In commented article 1, ZBNNR-BH shows insulating behavior for spin up bands (Eg=4.5 eV) whereas conducting nature for spin down electrons. They claim1 through the electronic band structure of 8-ZBNNR-BH [as shown in figure 2 (b)]1, that spin down - Alpha (conduction band minimum - CBM) and Beta (valence band maximum - VBM) bands are crossing each other at the Fermi level (green dotted line) and thus the ribbons are conducting for spin down electrons. But this crossing of two same spin bands is impossible because according to well-known Paulis exclusion principle- Two identical fermions (particles with half-integer spin) cannot occupy the same quantum state simultaneously.In the case of electrons, it is impossible for two electrons of a poly-electron atom to have the same values of the four quantum numbers (n, l, ml and ms). Thus for two electrons residing in the same orbital (same energy level e.g. above stated crossing point 1), n, l, and ml are the same, so ms must be different and the electrons must have opposite spins.
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Submitted 28 April, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Role of Metal Nanoparticles on porosification of silicon by metal induced etching (MIE)
Authors:
Shailendra K. Saxena,
Priyanka Yogi,
Pooja Yadav,
Suryakant Mishra,
Haardik Pandey,
Hari Mohan Rai,
Vivek Kumar,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
Porosification of silicon (Si) by metal induced etching (MIE) process have been studies here to understand the etching mechanism. The etching mechanism has been discussed on the basis of electron transfer from Si to metal ion (Ag$^+$) and metal to H$_2$O$_2$. Role of silver nanoparticles (AgNPs) in the etching process has been investigated by studying the effect of AgNPs coverage on surface porosi…
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Porosification of silicon (Si) by metal induced etching (MIE) process have been studies here to understand the etching mechanism. The etching mechanism has been discussed on the basis of electron transfer from Si to metal ion (Ag$^+$) and metal to H$_2$O$_2$. Role of silver nanoparticles (AgNPs) in the etching process has been investigated by studying the effect of AgNPs coverage on surface porosity. A quantitative analysis of SEM images, done using Image J, shows a direct correlation between AgNPs coverage and surface porosity after the porosification. Density of Si nanowires (NWs) also varies as a function of AgNPs fractional coverage which reasserts the fact that AgNPs governs the porosification process during MIE.
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Submitted 21 January, 2016;
originally announced January 2016.
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Half-metallicity in Armchair Boron Nitride Nanoribbons: A First-Principles Study
Authors:
Hari Mohan Rai,
Shailendra K. Saxena,
Vikash Mishra,
Ravikiran Late,
Rajesh Kumar,
Pankaj R. Sagdeo,
Neeraj K. Jaiswal,
Pankaj Srivastava
Abstract:
Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail by calculating electronic and magnetic properties of these hydrogenated ABNNRs by means of first-principles calculations within the local spin-density approximation (LSDA). ABNNRs with only edge B atoms passivated by H…
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Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail by calculating electronic and magnetic properties of these hydrogenated ABNNRs by means of first-principles calculations within the local spin-density approximation (LSDA). ABNNRs with only edge B atoms passivated by H atoms are found to be half-metallic (regardless of their width) with a half-metal gap of 0.26 eV. Upto 100% spin polarized charge transport is predicted across the Fermi level owing to the giant spin splitting. Transmission spectrum analysis also confirms the separation of spin up and spindown electronic channels. It is revealed that H-passivation of only edge N atoms transforms non-magnetic bare ribbons into energetically stable magnetic semiconductors whereas hydrogenation of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. The results are promising towards the realization of inorganic spintronic devices.
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Submitted 11 January, 2016;
originally announced January 2016.
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Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study
Authors:
Priyanka Yogi,
Shailendra K. Saxena,
Suryakant Mishra,
Vikash Mishra,
Hari M. Rai,
Ravikiran Late,
Vivek Kumar,
Bipin Joshi,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly t…
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Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly to give asymmetry of line-shape generated by considering the combined effect. This indicates existence of interplay between the two effects. The origin of interplay lies in the fact that Fano effect itself depends on quantum confinement effect and in turn provides an asymmetry. This can not be explained by considering the two effects contribution independent of each other.
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Submitted 3 August, 2015;
originally announced August 2015.
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Room temperature magnetodielectric studies on Mn doped LaGaO3
Authors:
Hari Mohan Rai,
Ravikiran Late,
Shailendra Saxena,
Vikas Mishra,
Rajesh Kumar,
Archna Sagdeo,
P. R. Sagdeo
Abstract:
The polycrystalline samples of LaGa1-xMnxO3 (0<x<0.3) has been prepared by solid state reaction route. The phase purity of these samples has been confirmed by powder x-ray diffraction experiments carried out on BL-12 at Indus-2 synchrotron radiation source. The sample with x=0.2 shows significant change in the value of capacitance with the application of magnetic field. The observed results were u…
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The polycrystalline samples of LaGa1-xMnxO3 (0<x<0.3) has been prepared by solid state reaction route. The phase purity of these samples has been confirmed by powder x-ray diffraction experiments carried out on BL-12 at Indus-2 synchrotron radiation source. The sample with x=0.2 shows significant change in the value of capacitance with the application of magnetic field. The observed results were understood by systematically analyzing magneto-capacitance (MC), magneto resistance (MR) and dielectric loss as a function of frequency. Our results and analysis suggests that the observed magneto dielectric (MD) coupling may be due to the MR effect of Maxwell-Wagner type and/or field induced dipolar relaxation. Further it is observed that the oxygen stoichiometry plays a very crucial role in observed MD coupling.
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Submitted 30 September, 2015; v1 submitted 24 February, 2015;
originally announced February 2015.
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Intrinsic Half-metallicity in Edge Fluorinated Armchair Boron Nitride Nanoribbons
Authors:
Hari Mohan Rai,
Shailendra K Saxena,
Vikash Mishra,
Ravikiran Late,
Rajesh Kumar,
Pankaj R Sagdeo,
Neeraj K. Jaiswal,
Pankaj Srivastava
Abstract:
We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluorinated ABNNRs have been systematically analyzed by means of first-principles calculations within the local spin-density approximation (LSDA). The ribbons whose only edge-B atoms passivated with F atoms (i.e., edge-N atom…
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We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluorinated ABNNRs have been systematically analyzed by means of first-principles calculations within the local spin-density approximation (LSDA). The ribbons whose only edge-B atoms passivated with F atoms (i.e., edge-N atoms are un-passivated), regardless of width, are found half-metallic with a half-metal gap of 0.3 eV. A 100 \% spin polarized charge transport across the Fermi level is expected for such ribbons as the spin polarized states are $\sim$0.4 eV more stable than the spin un-polarized states and only single-spin conducting channels are present across the Fermi level owing to the gigantic spin splitting. The existence of half-metallicity is attributed to the localization of electronic charge at bare edge-N atoms as revealed from the analysis of Bloch states and projected density of states (PDOS).The sufficiently large half-metal gap (0.3 eV) with huge difference in the energies ($\sim$ 0.4 eV) of spin polarized and spin compensated states projects these half-metallic ABNNRs as potential candidate for spintronics applications.
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Submitted 10 February, 2016; v1 submitted 7 January, 2015;
originally announced January 2015.
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Effect of silicon resistivity on its porosification using metal induced chemical etching
Authors:
Shailendra K Saxena,
Gayatri Sahu,
P. K. Sahoo,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been prepared using metal induced etching (MIE) technique from two different Si wafers having two different resistivities. It is observed that porous Si containing we…
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A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been prepared using metal induced etching (MIE) technique from two different Si wafers having two different resistivities. It is observed that porous Si containing well aligned Si nanowires are formed from high resistivity (1-20 $Ω$cm) Si wafer whereas interconnected pores or cheese like structures are formed from low resistivity (0.02 $Ω$cm ) Si wafers after MIE. An explanation for the different porosification processes has also been proposed based on the initial do** level where number of dopants seems to be playing an important role on the etching process. Visible photoluminescence have been observed from all the porous samples possibly due to quantum confinement effect.
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Submitted 19 August, 2014;
originally announced August 2014.
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Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)
Authors:
Shailendra K. Saxena,
Vivek Kumar,
Hari M. Rai,
Gayatri Sahu,
Ravi K. Late,
Kapil Saxena,
A. K. Shukla,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prio…
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Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.
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Submitted 25 March, 2014;
originally announced March 2014.
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Evolution of Asymmetric Raman line-shape from nano-structures
Authors:
Rajesh Kumar,
Gayatri Sahu,
Shailendra K. Saxena,
Hari M. Rai,
Pankaj R. Sagdeo
Abstract:
A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nano-structures. Physical significance of different terms in the theoretical…
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A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nano-structures. Physical significance of different terms in the theoretical asymmetric Raman line-shape has been explained here. Better understanding of theoretical reasoning behind each term allows one to use the theoretical Raman line-shape without going into details of theory from first principle. This will enable one to empirically derive a theoretical Raman line-shape function for any material if information about its phonon dispersion, size dependence etc is known.
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Submitted 20 September, 2013;
originally announced September 2013.
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Polaron population controlled of modulation wave vector Manganites
Authors:
P. R. Sagdeo
Abstract:
The growth of charge ordering phenomenon in calcium doped lanthanum manganites La1-xCaxMnO3, x 0.62, 0.67 has been studied using transmission electron microscopy TEM. The diffuse intensity characteristic of short range charge ordering is observed even at room temperature. This diffuse intensity has the local intensity maxima at the incommensurate positions q. With decreasing temperature, the int…
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The growth of charge ordering phenomenon in calcium doped lanthanum manganites La1-xCaxMnO3, x 0.62, 0.67 has been studied using transmission electron microscopy TEM. The diffuse intensity characteristic of short range charge ordering is observed even at room temperature. This diffuse intensity has the local intensity maxima at the incommensurate positions q. With decreasing temperature, the intensity I of super lattice charge ordered spot and the magnitude of its modulation wave vector q increases and there exists a linear relationship between I and q of super lattice charge ordered spot. This linear dependence can be explained taking in to account the population and the columbic interactions between the correlated polarons. It appears that the columbic interactions between the correlated polarons lead to the coherent distributions of eg charge carriers and thereby giving rise to the uniformly periodic superlattice charge ordered state to these manganites.
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Submitted 27 January, 2009;
originally announced January 2009.
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Effect of strain on the electronic structure of La0.7Ca0.3MnO3
Authors:
P. R. Sagdeo,
R. J. Choudhary,
D. M. Phase
Abstract:
The effect of substrate strain on the electronic valence band structure of La0.7Ca0.3MnO3 thin films has been investigated. For this purpose La0.7Ca0.3MnO3 thin films have been simultaneously grown on SrTiO3 and LaAlO3 substrates using pulsed laser deposition technique. These samples were characterized by x-ray diffraction, x-ray reflectivity, core level x-ray photoelectron spectroscopy, and sca…
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The effect of substrate strain on the electronic valence band structure of La0.7Ca0.3MnO3 thin films has been investigated. For this purpose La0.7Ca0.3MnO3 thin films have been simultaneously grown on SrTiO3 and LaAlO3 substrates using pulsed laser deposition technique. These samples were characterized by x-ray diffraction, x-ray reflectivity, core level x-ray photoelectron spectroscopy, and scanning electron microscopy measurements. Our experiments confirmed that all these samples have same chemical composition but different strain configuration. The electronic structure of these samples is probed through valence band spectroscopy measurements on Indus-1 synchrotron x-ray source. We observe that strain has large effect on the valence band electronic structure of La0.7Ca0.3MnO3. The results are explained on the basis of strain induced orbital occupancy and change in the crystal field splitting due to Mn-O bond length.
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Submitted 28 April, 2008;
originally announced April 2008.
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Origin of resistivity minima at low temperature in ferromagnetic metallic manganites
Authors:
P. R. Sagdeo,
R. J. Choudhary,
D. M. Phase
Abstract:
The resistivity and magnetoresistance measurements were carried out on thin film of La0.7Ca0.3MnO3 to investigate the possible origin of low temperature resistivity minimum observed in these samples. We observed large hysteresis in the magnetoresistance at low temperature; 5K and the sample current I has large effect on resistivity minima temperature. The observation of hysteresis at low tempera…
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The resistivity and magnetoresistance measurements were carried out on thin film of La0.7Ca0.3MnO3 to investigate the possible origin of low temperature resistivity minimum observed in these samples. We observed large hysteresis in the magnetoresistance at low temperature; 5K and the sample current I has large effect on resistivity minima temperature. The observation of hysteresis at low temperatures suggests the presence of inhomogeneity at low temperatures. These in-homogeneities consist of regions of different resistive phases. It appears that the high resistive phase prevents the tunneling of charge carriers between two low resistive regions and thus giving rise to the resistivity minimum in these samples.
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Submitted 26 April, 2008;
originally announced April 2008.
