Showing 1–50 of 96 results for author: Sadowski, J

Twisted MoSe2 Homobilayer Behaving as a Heterobilayer

Authors: Arka Karmakar, Abdullah Al-Mahboob, Natalia Zawadzka, Mateusz Raczyński, Weiguang Yang, Mehdi Arfaoui, Gayatri, Julia Kucharek, Jerzy T. Sadowski, Hyeon Suk Shin, Adam Babiński, Wojciech Pacuski, Tomasz Kazimierczuk, Maciej R Molas

Abstract: Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw… ▽ More Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature. △ Less

Submitted 7 June, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: 4 figures

Direct evidence of low work function on SrVO$_3$ cathode using thermionic electron emission microscopy and high-field ultraviolet photoemission spectroscopy

Authors: Md Sariful Sheikh, Lin Lin, Ryan Jacobs, Martin E. Kordesch, Jerzy T. Sadowski, Margaret Charpentier, Dane Morgan, John Booske

Abstract: Perovskite SrVO$_3$ has recently been proposed as a novel electron emission cathode material. Density functional theory (DFT) calculations suggest multiple low work function surfaces and recent experimental efforts have consistently demonstrated effective work functions of ~2.7 eV for polycrystalline samples, both results suggesting, but not directly confirming, some fraction of even lower work fu… ▽ More Perovskite SrVO$_3$ has recently been proposed as a novel electron emission cathode material. Density functional theory (DFT) calculations suggest multiple low work function surfaces and recent experimental efforts have consistently demonstrated effective work functions of ~2.7 eV for polycrystalline samples, both results suggesting, but not directly confirming, some fraction of even lower work function surface is present. In this work, thermionic electron emission microscopy (ThEEM) and high-field ultraviolet photoemission spectroscopy are used to study the local work function distribution and measure the work function of a partially-oriented-(110)-SrVO$_3$ perovskite oxide cathode surface. Our results show direct evidence of low work function patches of about 2.1 eV on the cathode surface, with corresponding onset of observable thermionic emission at 750 $^o$C. We hypothesize that, in our ThEEM experiments, the high applied electric field suppresses the patch field effect, enabling the direct measurement of local work functions. This measured work function of 2.1 eV is comparable to the previous DFT-calculated work function value of the SrVO-terminated (110) SrVO$_3$ surface (2.3 eV) and SrO terminated (100) surface (1.9 eV). The measured 2.1 eV value is also much lower than the work function for the (001) LaB$_6$ single crystal cathode (~2.7 eV) and comparable to the effective work function of B-type dispenser cathodes (~2.1 eV). If SrVO$_3$ thermionic emitters can be engineered to access domains of this low 2.1 eV work function, they have potential to significantly improve thermionic emitter-based technologies. △ Less

Submitted 5 April, 2024; originally announced April 2024.

HeROS: a miniaturised platform for research and development on Heterogeneous RObotic Systems

Authors: Tomasz Winiarski, Daniel Giełdowski, Jan Kaniuka, Jakub Ostrysz, Jakub Sadowski

Abstract: Tests and prototy** are vital in the research and development of robotic systems. Work with target hardware is problematic. Hence, in the article, a low-cost, miniaturised physical platform is presented to deal with experiments on heterogeneous robotic systems. The platform comprises a physical board with tiles of the standardised base, diverse mobile robots, and manipulation robots. The number… ▽ More Tests and prototy** are vital in the research and development of robotic systems. Work with target hardware is problematic. Hence, in the article, a low-cost, miniaturised physical platform is presented to deal with experiments on heterogeneous robotic systems. The platform comprises a physical board with tiles of the standardised base, diverse mobile robots, and manipulation robots. The number of exemplary applications validates the usefulness of the solution. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

Authors: Ghulam Hussain, Giuseppe Cuono, Piotr Dziawa, Dorota Janaszko, Janusz Sadowski, Slawomir Kret, Boguslawa Kurowska, Jakub Polaczynski, Kinga Warda, Shahid Sattar, Carlo M. Canali, Alexander Lau, Wojciech Brzezicki, Tomasz Story, Carmine Autieri

Abstract: We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w… ▽ More We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region. △ Less

Submitted 17 May, 2024; v1 submitted 7 January, 2024; originally announced January 2024.

Comments: 13 pages, 10 figures

Journal ref: Nanoscale Horizons (2024)

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Authors: Yifan Yuan, Michele Kotiuga, Tae Joon Park, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra S. Bisht, Xiao Lyu, Chung-Tse Michael Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin M. Rabe, Shriram Ramanathan

Abstract: Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential ca… ▽ More Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor do**, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an insulating phase with both metastable dipolar polarization and space-charge polarization. We then demonstrate transient negative differential capacitance in thin film capacitors. The space-charge polarization caused by long-range movement and trap** of protons dominates when the electric field exceeds the threshold value. First-principles calculations suggest the polarization originates from the polar structure created by H do**. We find that polarization decays within ~1 second which is an interesting temporal regime for neuromorphic computing hardware design, and we implement the transient characteristics in a neural network to demonstrate unsupervised learning. These discoveries open new avenues for designing novel ferroelectric materials and electrets using light-ion do**. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 13 pages, 5 figures

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Authors: Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, **bang Hu, Ayaz Ali, Takashi Taniguchi, Kenji Watanabe, Branson D. Belle, Bodil Holst, Jerzy T. Sadowski, Federico Mazzola, Justin W. Wells

Abstract: Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures… ▽ More Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the $π$-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks. △ Less

Submitted 26 August, 2023; originally announced August 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright $©$ 2022 The Authors, licensed under CC-BY 4.0 after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c02086

Journal ref: Nano Lett. 23, 16 (2023), 7539-7545

Nearly Lattice Matched GaAs/Pb(1-x)Sn(x)Te Core-Shell Nanowires

Authors: Sania Dad, Piotr Dziawa, Wiktoria Zajkowska, Sławomir Kret, Mirosław Kozłowski, Maciej Wójcik, Janusz Sadowski

Abstract: We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystallin… ▽ More We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the III-V core the lattice mismatch along the nanowire axis is less than 4%. The Pb(1-x)Sn(x)Te solid solution is chosen due to the topological crystalline insulator properties for some critical concentrations of Sn (x >= 0.4). The IV-VI shells are grown with different compositions spanning from binary SnTe, through Pb(1-x)Sn(x)Te with decreasing x value down to binary PbTe (x = 0). The samples are analyzed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100)Pb(1-x)Sn(x)Te on the sidewalls of wurtzite GaAs NWs. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Comments: 24 pages, 5 figures

Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates

Authors: Janusz Sadowski, Jarosław Z. Domagała, Wiktoria Zajkowska, Sławomir Kret, Bartłomiej Seredyński, Marta Gryglas-Borysiewicz, Zuzanna Ogorzałek, Rafał Bożek, Wojciech Pacuski

Abstract: Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001)… ▽ More Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure. △ Less

Submitted 4 September, 2022; v1 submitted 1 September, 2022; originally announced September 2022.

Comments: 23 pages, 6 figures

Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

Authors: Tomasz Andrearczyk, Janusz Sadowski, Krzysztof Dybko, Tadeusz Figielski, Tadeusz Wosinski

Abstract: Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The magnetization reversal, recorded through measurements of the anomalous Hall effect, appearing under assistance of a static magnetic field parallel to the curren… ▽ More Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The magnetization reversal, recorded through measurements of the anomalous Hall effect, appearing under assistance of a static magnetic field parallel to the current, is interpreted in terms of the spin-orbit torque mechanism. Our results demonstrate that an addition of a small fraction of heavy Bi atoms, substituting As atoms in the prototype DFS (Ga,Mn)As and increasing the strength of spin-orbit coupling in the DFS valence band, significantly enhances the efficiency of current-induced magnetization reversal thus reducing considerably the threshold current density necessary for the reversal. Our findings are of technological importance for applications to spin-orbit torque-driven nonvolatile memory and logic elements. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 8 pages, 5 figures

Journal ref: Appl.Phys. Lett. 121, 242401 (2022)

Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires

Authors: Janusz Sadowski, Anna Kaleta, Serhii Kryvyi, Dorota Janaszko, Bogusława Kurowska, Marta Bilska, Tomasz Wojciechowski, Jarosław Z. Domagala, Ana M. Sanchez, Sławomir Kret

Abstract: Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completel… ▽ More Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments. △ Less

Submitted 23 June, 2022; originally announced June 2022.

Comments: 41 pages, 14 figures

Journal ref: Scientific Reports, 12, 6007 (2022)

Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers

Authors: Ramesh C. Budhani, Vinay Sharma, Ezana Negusse, Jacob Casey, Arjun K. Pathak, Jerzy T. Sadowski, Brian Kirby

Abstract: The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) in magnetic multilayers results in the stabilization of topological spin textures like chiral domain walls and skyrmions. Here we report on the evaluation of interface-driven magnetic interactions in a uniquely designed multilayer where each magnetic layer of two AFM coupled sublattices of 3d and 4f moments is sandwiched betwee… ▽ More The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) in magnetic multilayers results in the stabilization of topological spin textures like chiral domain walls and skyrmions. Here we report on the evaluation of interface-driven magnetic interactions in a uniquely designed multilayer where each magnetic layer of two AFM coupled sublattices of 3d and 4f moments is sandwiched between the layers of β-tungsten and holmium whose spin Hall angles are large but opposite in sign. The atomic and magnetic periodicity of these multilayers is established by polarized neutron reflectivity measurements and the presence of a labyrinth domain spin texture of zero remanence with x-ray photoelectron microscopy. Measurements of the Hall resistivity (ρ_{xy}(T, H)) together with static magnetization (M(T,H)) over a broad range of temperature (T) and magnetic field (H) indicate impending compensation between 3d and 4f sublattices at T>350 K. These multilayers are characterized by a small (0.04 %) but positive magnetoresistance indicative of interface enhance scattering and a large (40 nΩ.m) and negative anomalous ρ_{xy}(T,H) which results from a parallel alignment of 4f moments with the external magnetic field. No distinct scaling is seen between ρ_{xy}(T,H), ρ_{xx}(T, H) and M(T,H) at temperatures above 200K where the magnetization develops out-of-plane anisotropy. The field scans of ρ_{xy} at T>200K show a distinct cusp in the vicinity of magnetic saturation. These Hall data have been analyzed in the framework of a model where a distinct topological contribution to ρ_{xy} rides over the anomalous Hall resistivities of the 3d and 4f magnetic sublattices. It is suggested that this apparent topological effect results from an interfacial DMI and dominates ρ_{xy}(T,H) in the temperature regime where the 3d and 4f lattices are nearly compensated. △ Less

Submitted 12 January, 2022; originally announced January 2022.

Comments: 7 figures

Journal ref: Physical Review B 2022

Molecular Beam Epitaxy growth of MoTe$_2$ on Hexagonal Boron Nitride

Authors: Bartłomiej Seredyński, Rafał Bożek, Jan Suffczyński, Justyna Piwowar, Janusz Sadowski, Wojciech Pacuski

Abstract: Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate… ▽ More Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate. Occurrence of MoTe$_{\tiny{\textrm{2}}}$ in various crystalline phases such as distorted octahedral 1T' phase with semimetal properties or hexagonal 2H phase with semiconducting properties opens a possibility of realisation of crystal-phase homostructures with tunable properties. Atomic force microscopy studies of MoTe$_{\tiny{\textrm{2}}}$ grown in a single monolayer regime enable us to determine surface morphology as a function of the growth conditions. The diffusion constant of MoTe$_{\tiny{\textrm{2}}}$ grown on hBN can be altered 5 times by annealing after the growth, reaching about 5 $\cdot$ 10$^{-6}$ cm$^{2}$/s. Raman spectroscopy results suggest a coexistence of both 2H and 1T' MoTe$_{\tiny{\textrm{2}}}$ phases in the studied samples. △ Less

Submitted 5 July, 2023; v1 submitted 24 November, 2021; originally announced November 2021.

Comments: 8 pages, 4 figures

Journal ref: Journal of Crystal Growth 596, 126806 (2022)

Spectroscopic evidence of high temperature superconductivity in VSe2

Authors: Turgut Yilmaz, Elio Vescovo, Jerzy T. Sadowski, Boris Sinkovic

Abstract: High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and growth parameters. Evidence for the superconducting state comes from the simultaneous detection of spectral kink, quasiparticle peak, Fermi gap, and their evol… ▽ More High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and growth parameters. Evidence for the superconducting state comes from the simultaneous detection of spectral kink, quasiparticle peak, Fermi gap, and their evolution with the temperature. The observation of Bogoliubov-like back-bending bands at low temperatures, signaling electron-hole pairing, further supports the presence of superconductivity in this system. The photoemission experiment also provides evidence for a formation of a pseudogap state at high temperatures, characterized by the progressive quenching of the quasiparticle peak feature coexisting with a persistent gap at the Fermi level, a behavior reminiscent of high-Tc superconductors. We attributed the origin of superconductivity in these VSe2 films to a modified Fermi surface combined with the formation of van Hove singularity points with a binding energy corresponding to the chemical potential of the system. Although Tc cannot be accurately determined from photoemission data, observations based on the survival temperature of the quasiparticle peak suggest that Tc could be as high as 100 ? 5 K and substantially higher than previous reports for any transition metal dichalcogenides. △ Less

Submitted 11 October, 2021; originally announced October 2021.

Comments: 3 figures, 8 pages

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$

Authors: Bartłomiej Seredyński, Zuzanna Ogorzałek, Wiktoria Zajkowska, Rafał Bożek, Mateusz Tokarczyk, Jan Suffczyński, Sławomir Kret, Janusz Sadowski, Marta Gryglas-Borysiewicz, Wojciech Pacuski

Abstract: The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearl… ▽ More The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe$_{2}$ layers are metallic, with the Hall concentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on the growth conditions. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Journal ref: Cryst. Growth Des. 21, 5773 (2021)

Magnetic properties of wurtzite (Ga,Mn)As

Authors: Katarzyna Gas, Janusz Sadowski, Maciej Sawicki

Abstract: Here we report on detailed studies of the magnetic properties of the wurtzite (Ga,Mn)As cylindrical shells. Ga$_{0.94}$Mn$_{0.06}$As shells have been grown by molecular beam epitaxy at low temperature as a part of multishell cylinders overgrown on wurtzite (Ga,In)As nanowires cores, synthesized on GaAs (111)B substrates. Our studies clearly indicate the presence of a low temperature ferromagnetic… ▽ More Here we report on detailed studies of the magnetic properties of the wurtzite (Ga,Mn)As cylindrical shells. Ga$_{0.94}$Mn$_{0.06}$As shells have been grown by molecular beam epitaxy at low temperature as a part of multishell cylinders overgrown on wurtzite (Ga,In)As nanowires cores, synthesized on GaAs (111)B substrates. Our studies clearly indicate the presence of a low temperature ferromagnetic coupling, which despite a reasonably high Mn contents of 6\% is limited only to below 30~K. A set of dedicated measurements shows that despite a high structural quality of the material the magnetic order has a granular form, which gives rise to the dynamical slow-down characteristic to blocked superparamagnets. The lack of the long range order has been assigned to a very low hole density, caused primarily by numerous compensation donors, arsenic antisites, formed in the material due to a specific geometry of the growth of the shells on the nanowire template. The associated electrostatic disorder has formed a patchwork of spontaneously magnetized (macrospin) and nonmagnetic (paramagnetic) volumes in the material. Using high field results it has been evaluated that the total volume taken by the macrospins constitute about 2/3 of the volume of the (Ga,Mn)As whereas in the remaining 1/3 only paramagnetic Mn ions reside. By establishing the number of the uncoupled ions the two contributions were separated. The Arrott plot method applied to the superparamagnetic part yielded the first experimental assessment of the magnitude of the spin-spin coupling temperature within the macrospins in (Ga,Mn)As, $T_{\mathrm{C}}=28$~K. In a broader view our results constitute an important contribution to the still ongoing dispute on the true and the dominant form(s) of the magnetism in this model dilute ferromagnetic semiconductor. △ Less

Submitted 18 January, 2021; originally announced January 2021.

Comments: 23 pages, 7 figures

Journal ref: Journal of Magnetism and Magnetic Materials 533 (2021) 168012

The Breakdown of Mott Physics at VO$_2$ Surfaces

Authors: Matthew J. Wahila, Nicholas F. Quackenbush, Jerzy T. Sadowski, Jon-Olaf Krisponeit, Jan Ingo Flege, Richard Tran, Shyue ** Ong, Christoph Schlueter, Tien-Lin Lee, Megan E. Holtz, David A. Muller, Hanjong Paik, Darrell G. Schlom, Wei-Cheng Lee, Louis F. J. Piper

Abstract: Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Usin… ▽ More Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other "Mott-like" MITs, but also for any potential device applications of such materials. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films

Authors: K. Medjanik, O. Fedchenko, O. Yastrubchak, J. Sadowski, M. Sawicki, L. Gluba, D. Vasilyev, S. Babenkov, S. Chernov, A. Winkelmann, H. J. Elmers, G. Schoenhense

Abstract: Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band map** and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films represent an ideal testing ground, because of the non-centrosymmetric GaAs crystal structure itself and In and Mn… ▽ More Recent advances in the brilliance of hard-X-ray beamlines and photoelectron momentum microscopy facilitate bulk valence-band map** and core-level-resolved hard-X-ray photoelectron diffraction (hXPD) for structural analysis in the same setup. High-quality MBE-grown (In,Ga,Mn)As films represent an ideal testing ground, because of the non-centrosymmetric GaAs crystal structure itself and In and Mn do** concentrations of few percent. Here we present results of k-map** and hXPD for the title compound with 3% In and 2.5 or 5.6% Mn using hard X-ray photons (3 to 5 keV) at beamline P22 at PETRA III (DESY, Hamburg). Numerical processing (difference or ratio images) emphasizes subtle differences of hXPD patterns like the fingerprint-like hXPD-signatures of As and Ga sites. XPD calculations using the Bloch-wave method show a one-to-one correspondence with the measurements. The hXPD results reveal a predominant Ga substitutional site for Mn. Valence band map** shows that the Fermi energy lies within the valence band and decreases as the Mn concentration increases. The results support the p-d Zener model of ferromagnetism in the title compound. In addition to the shift of the Fermi energy, the band splitting increases with increasing Mn content, which we attribute to an increase of many-body correlations with increasing metallicity of the sample. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Sudden collapse of magnetic order in oxygen deficient nickelate films

Authors: Jiarui Li, Robert J. Green, Zhen Zhang, Ronny Sutarto, Jerzy T. Sadowski, Zhihai Zhu, Grace Zhang, Da Zhou, Yifei Sun, Feizhou He, Shriram Ramanathan, Riccardo Comin

Abstract: Oxygen vacancies play a crucial role in the control of the electronic, magnetic, ionic, and transport properties of functional oxide perovskites. Rare earth nickelates (RENiO$_{3-x}$) have emerged over the years as a rich platform to study the interplay between the lattice, the electronic structure, and ordered magnetism. In this study, we investigate the evolution of the electronic and magnetic s… ▽ More Oxygen vacancies play a crucial role in the control of the electronic, magnetic, ionic, and transport properties of functional oxide perovskites. Rare earth nickelates (RENiO$_{3-x}$) have emerged over the years as a rich platform to study the interplay between the lattice, the electronic structure, and ordered magnetism. In this study, we investigate the evolution of the electronic and magnetic structure in thin films of RENiO$_{3-x}$, using a combination of X-ray absorption spectroscopy and imaging, resonant X-ray scattering, and extended multiplet ligand field theory modeling. We find that oxygen vacancies modify the electronic configuration within the Ni-O orbital manifolds, leading to a dramatic evolution of long-range electronic transport pathways despite the absence of nanoscale phase separation. Remarkably, magnetism is robust to substantial levels of carrier do**, and only a moderate weakening of the $(1/4, 1/4, 1/4)_{pc}$ antiferromagnetic order parameter is observed, whereas the magnetic transition temperature is largely unchanged. Only at a certain point long-range magnetism is abruptly erased without an accompanying structural transition. We propose the progressive disruption of the 3D magnetic superexchange pathways upon introduction of point defects as the mechanism behind the sudden collapse of magnetic order in oxygen-deficient nickelates. Our work demonstrates that, unlike most other oxides, ordered magnetism in RENiO$_{3-x}$ is mostly insensitive to carrier do**. The sudden collapse of ordered magnetism upon oxygen removal may provide a new mechanism for solid-state magneto-ionic switching and new applications in antiferromagnetic spintronics. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 187602 (2021)

Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system

Authors: Turgut Yilmaz, Xiao Tong, Zhongwei Dai, Jerzy T. Sadowski, Eike F. Schwier, Kenya Shimada, Sooyeon Hwang, Kim Kisslinger, Konstantine Kaznatcheev, Elio Vescovo, Boris Sinkovic

Abstract: Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible… ▽ More Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron do**. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials. △ Less

Submitted 23 June, 2020; originally announced June 2020.

Comments: 25 pages, 5 figures

Correlating surface stoichiometry and termination in SrTiO$_{3}$ films grown by hybrid molecular beam epitaxy

Authors: Suresh Thapa, Sydney R. Provence, Devin Jessup, Jason Lapano, Matthew Brahlek, Jerzy T. Sadowski, Petra Reinke, Wencan **, Ryan B. Comes

Abstract: Hybrid oxide molecular beam epitaxy (hMBE), a thin-film deposition technique in which transition metal cations are delivered using a metal-organic precursor, has emerged as the state-of-the-art approach to the synthesis of electronic-grade complex oxide films with a stoichiometric growth window. However, numerous questions remain regarding the chemical mechanisms of the growth process and the surf… ▽ More Hybrid oxide molecular beam epitaxy (hMBE), a thin-film deposition technique in which transition metal cations are delivered using a metal-organic precursor, has emerged as the state-of-the-art approach to the synthesis of electronic-grade complex oxide films with a stoichiometric growth window. However, numerous questions remain regarding the chemical mechanisms of the growth process and the surface properties of the resulting films. To examine these properties, thin film SrTiO$_{3}$ (STO) was prepared by hMBE using a titanium tetraisopropoxide (TTIP) precursor for Ti delivery and an elemental Sr source on annealed STO and Nb-doped STO substrates with varying TTIP:Sr flux ratios to examine the conditions for the reported stoichiometric growth window. The films were transferred in vacuo to an x-ray photoelectron spectroscopy system to study the surface elemental composition. Samples were examined using x-ray diffraction to compare our surface sensitive results with previously reported measurements of the bulk of the films in the literature. Ex situ studies by atomic force microscopy, scanning tunneling microscopy and low energy electron microscopy confirmed the presence of surface reconstructions and an Ehrlich-Schwoebel barrier consistent with an A-site SrO termination. We find that a surface exhibiting a mixture of SrO and TiO$_{2}$ termination, or a full SrO termination is necessary to obtain stoichiometric adsorption-controlled growth. These results indicate that surface Sr is necessary to maintain chemical equilibrium for stoichiometric growth during the hMBE process, which is important for the design of future interfacial systems using this technique. △ Less

Submitted 19 July, 2021; v1 submitted 31 March, 2020; originally announced April 2020.

Comments: 37 pages, 6 figures, 10 supplemental figures

Journal ref: Journal of Vacuum Science and Technology A, 39 053203 (2021)

Enhanced ferromagnetism in cylindrically confined MnAs nanocrystals embedded in wurtzite GaAs nanowire shells

Authors: Anna Kaleta, Slawomir Kret, Katarzyna Gas, Boguslawa Kurowska, Serhii B. Kryvyi, Bogdan Rutkowski, Nevill Gonzalez Szwacki, Maciej Sawicki, Janusz Sadowski

Abstract: Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the mag… ▽ More Nearly 30% increase of the ferromagnetic phase transition temperature has been achieved in strained MnAs nanocrystals embedded in a wurtzite GaAs matrix. Wurtzite GaAs exerts tensile stress on hexagonal MnAs nanocrystals, preventing a hexagonal to orthorhombic structural phase transition, which in the bulk MnAs is combined with the magnetic one. This effect results in a remarkable shift of the magneto-structural phase transition temperature from 313 K in the bulk MnAs to above 400 K in the tensely strained MnAs nanocrystals. This finding is corroborated by the state of the art transmission electron microscopy, sensitive magnetometry and the first-principles calculations. The effect relies in defining a nanotube geometry of molecular beam epitaxy grown core-multishell wurtzite (Ga,In)As/(Ga,Al)As/(Ga,Mn)As/GaAs nanowires where the MnAs nanocrystals are formed during the thermal-treatment-induced phase separation of wurtzite (Ga,Mn)As into the GaAs:MnAs granular system. Such a unique combination of two types of hexagonal lattices provides possibility of attaining quasi-hydrostatic tensile strain in MnAs (impossible otherwise), leading to the substantial ferromagnetic phase transition temperature increase in this compound. △ Less

Submitted 14 October, 2019; originally announced October 2019.

Comments: 31 pages, 13 figures

Journal ref: Nano Lett. 19 (2019) 7324-7333

Scale-invariant magnetic textures in the strongly correlated oxide NdNiO$_3$

Authors: Jiarui Li, Jonathan Pelliciari, Claudio Mazzoli, Sara Catalano, Forrest Simmons, Jerzy T. Sadowski, Abraham Levitan, Marta Gibert, Erica Carlson, Jean-Marc Triscone, Stuart Wilkins, Riccardo Comin

Abstract: Strongly correlated quantum solids are characterized by an inherently granular electronic fabric, with spatial patterns that can span multiple length scales in proximity to a critical point. Here, we used a resonant magnetic X-ray scattering nanoprobe with sub-100 nm spatial resolution to directly visualize the texture of antiferromagnetic domains in NdNiO$_3$. Surprisingly, our measurements revea… ▽ More Strongly correlated quantum solids are characterized by an inherently granular electronic fabric, with spatial patterns that can span multiple length scales in proximity to a critical point. Here, we used a resonant magnetic X-ray scattering nanoprobe with sub-100 nm spatial resolution to directly visualize the texture of antiferromagnetic domains in NdNiO$_3$. Surprisingly, our measurements revealed a highly textured magnetic fabric, which is shown to be robust and nonvolatile even after thermal erasure across its ordering ($T_{N\acute{e}el}$) temperature. The scale-free distribution of antiferromagnetic domains and its non-integral dimensionality point to a hitherto-unobserved magnetic fractal geometry in this system. These scale-invariant textures directly reflect the continuous nature of the magnetic transition and the proximity of this system to a critical point. The present study not only exposes the near-critical behavior in rare earth nickelates but also underscores the potential for novel X-ray scattering nanoprobes to image the multiscale signatures of criticality near a critical point. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 8 pages, 3 figures

Second derivative analysis and alternative data filters for multi-dimensional spectroscopies: a Fourier-space perspective

Authors: Rongjie Li, Xiaoni Zhang, Lin Miao, Luca Stewart, Erica Kotta, Dong Qian, Konstantine Kaznatcheev, Jerzy T. Sadowski, Elio Vescovo, Abdullah Alharbi, Ting Wu, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi, L. Andrew Wray

Abstract: The second derivative image (SDI) method is widely applied to sharpen dispersive data features in multi-dimensional spectroscopies such as angle resolved photoemission spectroscopy (ARPES). Here, the SDI function is represented in Fourier space, where it has the form of a multi-band pass filter. The interplay of the SDI procedure with undesirable noise and background features in ARPES data sets is… ▽ More The second derivative image (SDI) method is widely applied to sharpen dispersive data features in multi-dimensional spectroscopies such as angle resolved photoemission spectroscopy (ARPES). Here, the SDI function is represented in Fourier space, where it has the form of a multi-band pass filter. The interplay of the SDI procedure with undesirable noise and background features in ARPES data sets is reviewed, and it is shown that final image quality can be improved by eliminating higher Fourier harmonics of the SDI filter. We then discuss extensions of SDI-like band pass filters to higher dimensional data sets, and how one can create even more effective filters with some a priori knowledge of the spectral features. △ Less

Submitted 23 June, 2019; originally announced June 2019.

Comments: 7 pages, 5 figures

Temperature-independent thermal radiation

Authors: Alireza Shahsafi, Patrick Roney, You Zhou, Zhen Zhang, Yuzhe Xiao, Chenghao Wan, Raymond Wambold, Jad Salman, Zhaoning Yu, Jiarui Li, Jerzy T. Sadowski, Riccardo Comin, Shriram Ramanathan, Mikhail A. Kats

Abstract: Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin t… ▽ More Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin thermal emitters that violate this one-to-one relationship via the use of samarium nickel oxide (SmNiO3), a strongly correlated quantum material that undergoes a fully reversible, temperature-driven solid-state phase transition. The smooth and hysteresis-free nature of this unique insulator-to-metal (IMT) phase transition allows us to engineer the temperature dependence of emissivity to precisely cancel out the intrinsic blackbody profile described by the Stefan-Boltzmann law, for both heating and cooling. Our design results in temperature-independent thermally emitted power within the long-wave atmospheric transparency window (wavelengths of 8 - 14 um), across a broad temperature range of ~30 °C, centered around ~120 °C. The ability to decouple temperature and thermal emission opens a new gateway for controlling the visibility of objects to infrared cameras and, more broadly, new opportunities for quantum materials in controlling heat transfer. △ Less

Submitted 19 September, 2019; v1 submitted 1 February, 2019; originally announced February 2019.

Comments: Main text and supplementary

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

Authors: J. Sadowski, P. Dziawa, A. Kaleta, B. Kurowska, A. Reszka, T. Story, S. Kret

Abstract: SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investig… ▽ More SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective cap** in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Comments: 7 pages, 8 figures

Journal ref: Nanoscale 10, 20772 (2018)

Bi monocrystal formation on InAs(111)A and B substrates

Authors: L. Nicolaï, J. -M. Mariot, U. Djukic, W. Wang, O. Heckmann, M. C. Richter, J. Kanski, M. Leandersson, J. Sadowski, T. Balasubramanian, I. Vobornik, J. Fujii, J. Braun, H. Ebert, J. Minár, K. Hricovini

Abstract: The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro… ▽ More The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations. △ Less

Submitted 1 July, 2018; originally announced July 2018.

Comments: 7 pages, 7 figures

A topological material in the III-V family: heteroepitaxial InBi on InAs

Authors: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Uros Djukic, Olivier Heckmann, Jean-Michel Mariot, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini

Abstract: InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic… ▽ More InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hop** terms, and no Bi-In interaction, gives a deeper insight into the spin texture. △ Less

Submitted 20 March, 2024; v1 submitted 8 June, 2018; originally announced June 2018.

Comments: 5 figures, 11 pages (+ Sup.)

Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers

Authors: M. Sawicki, O. Proselkov, C. Sliwa, P. Aleshkevych, J. Z. Domagala, J. Sadowski, T. Dietl

Abstract: Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain a… ▽ More Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range. △ Less

Submitted 23 February, 2018; v1 submitted 31 January, 2018; originally announced February 2018.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. B 97, 184403 (2018)

Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties

Authors: J. Sadowski, S. Kret, A. Siusys, T. Wojciechowski, K. Gas, M. F. Islam, C. M. Canali, M. Sawicki

Abstract: (Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a… ▽ More (Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a proper selection/choice of both the core and outer shell materials. △ Less

Submitted 15 December, 2017; originally announced December 2017.

Comments: 13 pages, 7 figures

Journal ref: Nanoscale, 2017, 9, 2129

On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase

Authors: L. Gluba, O. Yastrubchak, J. Z. Domagala, R. Jakiela, T. Andrearczyk, J. Żuk, T. Wosinski, J. Sadowski, M. Sawicki

Abstract: The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin - spin coupling in (Ga,Mn)As. Only for n-type (Ga,Mn)As with the Mn… ▽ More The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin - spin coupling in (Ga,Mn)As. Only for n-type (Ga,Mn)As with the Mn content below about 0.3% the Mn-related extended states are visible as a feature detached from the valence-band edge and partly occupied with electrons. The combined magnetic and low-temperature photoreflectance studies presented here indicate that the paramagnetic - ferromagnetic transformation in p-type (Ga,Mn)As takes place without imposing changes of the unitary character of the valence band with the Fermi level located therein. The whole process is rooted in the nanoscale fluctuations of the local (hole) density of states and the formation of a superparamagnetic-like state. The Fermi level in (Ga,Mn)As is coarsened by the carrier concentration of the itinerant valence band holes and further fine-tuned by the many-body interactions. △ Less

Submitted 21 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 115201 (2018)

Off-axis electron holography of magnetic nanostructures: magnetic behavior of Mn rich nanoprecipitates in (Mn,Ga)As system

Authors: M. Baranska, P. Dluzewski, S. Kret, K. Morawiec, Tian Li, J. Sadowski

Abstract: The Lorentz off-axis electron holography technique is applied to study the magnetic nature of Mn rich nanoprecipitates in (Mn,Ga)As system. The effectiveness of this technique is demonstrated in detection of the magnetic field even for small nanocrystals having an average size down to 20 nm. The Lorentz off-axis electron holography technique is applied to study the magnetic nature of Mn rich nanoprecipitates in (Mn,Ga)As system. The effectiveness of this technique is demonstrated in detection of the magnetic field even for small nanocrystals having an average size down to 20 nm. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 11 pages, 3 figures

Journal ref: ACTA PHYSICA POLONICA A, 131, 1406 (2017)

Surface buckling of phosphorene materials: determination, origin and influence on electronic structure

Authors: Zhongwei Dai, Wencan **, Jie-Xiang Yu, Maxwell Grady, Jerzy T. Sadowski, Young Duck Kim, James Hone, Jiadong Zang, Richard M. Osgood, Jr., Karsten Pohl

Abstract: The surface structure of phosphorene crystals materials is determined using surface sensitive dynamical micro-spot low energy electron diffraction (μLEED) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (\textit{i}) crystalline cleaved black phosphorus (BP) at 300 K and (\textit{ii}) exfoliated few-layer phosphorene (FLP) of about 10 nm thicknes, w… ▽ More The surface structure of phosphorene crystals materials is determined using surface sensitive dynamical micro-spot low energy electron diffraction (μLEED) analysis using a high spatial resolution low energy electron microscopy (LEEM) system. Samples of (\textit{i}) crystalline cleaved black phosphorus (BP) at 300 K and (\textit{ii}) exfoliated few-layer phosphorene (FLP) of about 10 nm thicknes, which were annealed at 573 K in vacuum were studied. In both samples, a significant surface buckling of 0.22 Å and 0.30 Å, respectively, is measured, which is one order of magnitude larger than previously reported. Using first principle calculations, the presence of surface vacancies is attributed not only to the surface buckling in BP and FLP, but also the previously reported intrinsic hole do** of phosphorene materials. △ Less

Submitted 22 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Materials 1, 074003 (2017)

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator

Authors: Wencan **, Suresh Vishwanath, Jianpeng Liu, Lingyuan Kong, Rui Lou, Zhongwei Dai, Jerzy T. Sadowski, Xinyu Liu, Huai-Hsun Lien, Alexander Chaney, Yimo Han, Micheal Cao, Junzhang Ma, Tian Qian, Jerry I. Dadap, Shancai Wang, Malgorzata Dobrowolska, Jacek Furdyna, David A. Muller, Karsten Pohl, Hong Ding, Huili Grace Xing, Richard M. Osgood, Jr

Abstract: Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density fu… ▽ More Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 12 pages, 13 figures, supplementary materials included

Journal ref: Phys. Rev. X 7, 041020 (2017)

Electronic structure of (Ga,Mn)As revisited

Authors: J. Kanski, L. Ilver, K. Karlsson, I. Ulfat, M. Leandersson, J. Sadowski, I. Di Marco

Abstract: The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we are for the first time able to identify a highly dispersive Mn-induced energy band in (Ga,Mn)As. Our r… ▽ More The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we are for the first time able to identify a highly dispersive Mn-induced energy band in (Ga,Mn)As. Our results show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band. △ Less

Submitted 24 August, 2016; originally announced August 2016.

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Authors: K. Levchenko, T. Andrearczyk, J. Z. Domagala, J. Sadowski, L. Kowalczyk, M. Szot, R. Kuna, T. Figielski, T. Wosinski

Abstract: Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magne… ▽ More Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices. △ Less

Submitted 9 July, 2016; originally announced July 2016.

Comments: 10 pages, 3 figures, to be published in the Proceedings of ICSM-2016 conference

Determining Curie temperature of (Ga,Mn)As samples based on electrical transport measurements: low Curie temperature case

Authors: Adam Kwiatkowski, Marta Gryglas-Borysiewicz, Piotr Juszynski, Jacek Przybytek, Maciej Sawicki, Janusz Sadowski, Dariusz Wasik, Michal Baj

Abstract: In this paper we show that the widely accepted method of the determination of Curie temperature (TC) in (Ga,Mn)As samples, based on the position of the peak in the temperature derivative of the resistivity,completely fails in the case of non-metallic and low-TC unannealed samples. In this case we propose an alternative method, also based on electric transport measurements, which exploits temperatu… ▽ More In this paper we show that the widely accepted method of the determination of Curie temperature (TC) in (Ga,Mn)As samples, based on the position of the peak in the temperature derivative of the resistivity,completely fails in the case of non-metallic and low-TC unannealed samples. In this case we propose an alternative method, also based on electric transport measurements, which exploits temperature dependence of the second derivative of the resistivity upon magnetic field. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Comments: 5 pages, 3 figures

Journal ref: Applied Physics Letters 108, 242103 (2016)

Wrinkles of graphene on Ir(111): Macroscopic network ordering and internal multi-lobed structure

Authors: Marin Petrović, Jerzy T. Sadowski, Antonio Šiber, Marko Kralj

Abstract: The large-scale production of graphene monolayer greatly relies on epitaxial samples which often display stress-relaxation features in the form of wrinkles. Wrinkles of graphene on Ir(111) are found to exhibit a fairly well ordered interconnecting network which is characterized by low-energy electron microscopy (LEEM). The high degree of quasi-hexagonal network arrangement for the graphene aligned… ▽ More The large-scale production of graphene monolayer greatly relies on epitaxial samples which often display stress-relaxation features in the form of wrinkles. Wrinkles of graphene on Ir(111) are found to exhibit a fairly well ordered interconnecting network which is characterized by low-energy electron microscopy (LEEM). The high degree of quasi-hexagonal network arrangement for the graphene aligned to the underlying substrate can be well described as a (non-Poissonian) Voronoi partition of a plane. The results obtained strongly suggest that the wrinkle network is frustrated at low temperatures, retaining the order inherited from elevated temperatures when the wrinkles interconnect in junctions which most often join three wrinkles. Such frustration favors the formation of multi-lobed wrinkles which are found in scanning tunneling microscopy (STM) measurements. The existence of multiple lobes is explained within a model accounting for the interplay of the van der Waals attraction between graphene and iridium and bending energy of the wrinkle. The presented study provides new insights into wrinkling of epitaxial graphene and can be exploited to further expedite its application. △ Less

Submitted 28 July, 2015; originally announced July 2015.

Comments: 10 pages, 7 figures, 1 table, supplementary data available online

Journal ref: Carbon 94 (2015), pp. 856-863

Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties

Authors: K. Levchenko, T. Andrearczyk, J. Z. Domagala, J. Sadowski, L. Kowalczyk, M. Szot, T. Figielski, T. Wosinski

Abstract: Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to th… ▽ More Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magnetocrystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers. △ Less

Submitted 29 June, 2015; originally announced June 2015.

Comments: 8 pages, 3 figures

Electronic structure of (Ga,Mn)As revisited: an alternative view on the "Battle of the bands"

Authors: J. Kanski, L. Ilver, K. Karlsson, M. Leandersson, I. Ulfat, J. Sadowski

Abstract: New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved photoemission shows that the band is spin polarized even at room temperature. The results are not consistent with any of the currently discussed band mod… ▽ More New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved photoemission shows that the band is spin polarized even at room temperature. The results are not consistent with any of the currently discussed band models for ferromagnetism. △ Less

Submitted 3 November, 2014; v1 submitted 31 October, 2014; originally announced October 2014.

Comments: 18 pages, 4 figures

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy

Authors: Aloyzas Siusys, Janusz Sadowski, Maciej Sawicki, Slawomir Kret, Tomasz Wojciechowski, Katarzyna Gas, Wojciech Szuszkiewicz, Agnieszka Kaminska, Tomasz Story

Abstract: Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron micr… ▽ More Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In, without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ~17 K. △ Less

Submitted 9 September, 2014; originally announced September 2014.

Comments: 37 pages, 8 figures

Journal ref: Nano Letters 14, 4263 (2014)

Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers

Authors: K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, J. Sadowski

Abstract: High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement o… ▽ More High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Comments: 9 pages, 3 figures, to be published in the proceedings of the "43rd "Jaszowiec" International School and Conference on the Physics of Semiconductors", June 7-12, 2014, Wisla, Poland

Absence of a Proximity Effect in a Topological Insulator on a Cuprate Superconductor: Bi2Se3/Bi2Sr2CaCu2O8

Authors: T. Yilmaz, I. Pletikosic, A. P. Weber, J. T. Sadowski, G. D. Gu, A. N. Caruso, B. Sinkovic, T. Valla

Abstract: Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attra… ▽ More Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material. △ Less

Submitted 17 March, 2014; originally announced March 2014.

Comments: Work presented at the March Meeting of American Physical Society in Denver on March 3, 2014

Journal ref: Phys. Rev. Lett. 113, 067003 (2014)

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Authors: Katarzyna Gas, Janusz Sadowski, Takeshi Kasama, Aloyzas Siusys, Wojciech Zaleszczyk, Tomasz Wojciechowski, Jean-Francois Morhange, Abdulmenaf Altintas, H. Q. Xu, Wojciech Szuszkiewicz

Abstract: Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga… ▽ More Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the do** level, i.e., is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: 19 pages, 11 figures

Journal ref: Nanoscale, 5, 7410 (2013)

Analysis of the $E_{1}$ and $E_{1}$ +$Δ_{1}$ optical transitions in (Ga,Mn)As epitaxial layers

Authors: L. Gluba, O. Yastrubchak, G. Sek, W. Rudno-Rudziński, J. Sadowski, M. Kulik, W. Rzodkiewicz, M. Rawski, T. Andrearczyk, T. Wosinski, J. Żuk

Abstract: The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence band or the impurity band. Full understanding of character of the Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. In this paper… ▽ More The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence band or the impurity band. Full understanding of character of the Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. In this paper we verify the ellipsometric results and compare with more precise photoreflectance method which gives a new insight into the interactions of Mn impurity states with GaAs valence band. Indeed, $E_{1}$ and $E_{1}$+$Δ_{1}$ inter-band transition energies for highly doped and annealed (Ga,Mn)As epitaxial layers have not confirmed the interaction between detached Mn impurity band and the valence band. Thus, the description with merged Mn states and GaAs valence band is in agreement with our results. Our findings are supported by the high resolution transmission microscopy and magnetization measurements. △ Less

Submitted 13 December, 2013; originally announced December 2013.

The mechanism of caesium intercalation of graphene

Authors: M. Petrovic, I. Srut Rakic, S. Runte, C. Busse, J. T. Sadowski, P. Lazic, I. Pletikosic, Z. -H. Pan, M. Milun, P. Pervan, N. Atodiresei, R. Brako, D. Sokcevic, T. Valla, T. Michely, M. Kralj

Abstract: Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries… ▽ More Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials. △ Less

Submitted 18 November, 2013; v1 submitted 15 November, 2013; originally announced November 2013.

Comments: 8 pages, 7 figures in published form, supplementary information available

Journal ref: Nat. Commun. 4:2772 (2013)

Effects of non-uniform Mn distribution in (Ga,Mn)As

Authors: I. Ulfat, J. Kanski, L. Ilver, J. Sadowski, K. Karlsson, A. Ernst

Abstract: Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states for concentration as low as 2.5 %. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems wi… ▽ More Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states for concentration as low as 2.5 %. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: To be submitted to Physical Review Letters

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Authors: O. Yastrubchak, T. Andrearczyk, J. Z. Domagala, J. Sadowski, L. Gluba, J. Zuk, T Wosinski

Abstract: The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and SQUID… ▽ More The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results revealing a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy in the annealed (Ga,Mn)As layers is interpreted as a result of the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the enhanced free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors. △ Less

Submitted 17 May, 2013; originally announced May 2013.

Comments: 17 pages, 4 figures. arXiv admin note: substantial text overlap with arXiv:1305.4056

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Authors: O. Yastrubchak, J. Sadowski, H. Krzyzanowska, L. Gluba, J. Zuk, J. Z. Domagala, T. Andrearczyk, T. Wosinski

Abstract: Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn do** in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed re… ▽ More Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn do** in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediated ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor. △ Less

Submitted 17 May, 2013; originally announced May 2013.

Comments: 20 pages, 5 figures. arXiv admin note: text overlap with arXiv:1012.4760

Termination dependent topological surface states of the natural superlattice phase Bi$_4$Se$_3$

Authors: Q. D. Gibson, L. M. Schoop, A. P. Weber, Huiwen Ji, S. Nadj-Perge, I. K. Drozdov, H. Beidenkopf, J. T. Sadowski, A. Fedorov, A. Yazdani, T. Valla, R. J. Cava

Abstract: We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-ini… ▽ More We describe the topological surface states of Bi$_4$Se$_3$, a compound in the infinitely adaptive Bi$_2$-Bi$_2$Se$_3$ natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density functional theory calculations. Topological surface states are observed on both surfaces, but with markedly different dispersions and Kramers point energies. Bi$_4$Se$_3$ therefore represents the only known compound with different topological states on differently terminated surfaces. △ Less

Submitted 8 November, 2013; v1 submitted 15 May, 2013; originally announced May 2013.

Comments: 5 figures references added Published in PRB: http://link.aps.org/doi/10.1103/PhysRevB.88.081108

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Authors: T. Valla, Huiwen Ji, L. M. Schoop, A. P. Weber, Z. -H. Pan, J. T. Sadowski, E. Vescovo, A. V. Fedorov, A. N. Caruso, Q. D. Gibson, L. Muchler, C. Felser, R. J. Cava

Abstract: We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave… ▽ More We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $Γ$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator. △ Less

Submitted 8 January, 2013; v1 submitted 13 August, 2012; originally announced August 2012.

Comments: published version, 5 pages, 4 figures

Journal ref: Phys. Rev. B 86, 241101(R) (2012)