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Effect of gallium do** on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
Authors:
Daniel Brito,
Ana Pérez-Rodriguez,
Ishwor Khatri,
Carlos José Tavares,
Mario Amado,
Eduardo Castro,
Enrique Diez,
Sascha Sadewasser,
Marcel S Claro
Abstract:
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural do**, which makes the transport in the bulk dominant. This effect can be overcome by shifting…
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Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural do**, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a do** percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.
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Submitted 30 June, 2022;
originally announced June 2022.
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Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
Authors:
Marcel S. Claro,
Juan P. Martínez-Pastor,
Alejandro Molina-Sánchez,
Khalil El Hajraoui,
Justyna Grzonka,
Hamid Pashaei Adl,
David Fuertes Marrón,
Paulo J. Ferreira,
Alex Bondarchuk,
Sascha Sadewasser
Abstract:
Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devi…
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Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.
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Submitted 11 October, 2022; v1 submitted 13 June, 2022;
originally announced June 2022.
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Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors
Authors:
Marcel S. Claro,
Justyna Grzonka,
Nicoleta Nicoara,
Paulo J. Ferreira,
Sascha Sadewasser
Abstract:
The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrica…
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The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrication of photodetectors based on five quintuple layers was produced using photolithography and other standard semiconductor processing methods. The photodetectors exhibit responsivity of 3 mA/W, peak specific detectivity (D*) of $10^9$ Jones, external quantum efficiency (EQE) of 0.67 % at 550 nm, and response-time of ~7 ms, which is faster than any result previously reported for $β-In_2Se_3$ photodetectors. From the photocurrent measurements, an optical bandgap of 1.38 eV was observed. These results on wafer-scale deposition of 2D $In_2Se_3$, as well as its fabrication into optoelectronic devices provide the missing link that will enable the commercialization of 2D materials.
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Submitted 30 November, 2020; v1 submitted 21 May, 2020;
originally announced May 2020.
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Relaxation Effects in the Transition Temperature of Superconducting HgBa2CuO4+delta
Authors:
S. Sadewasser,
J. S. Schilling,
J. L. Wagner,
O. Chmaissem,
J. D. Jorgensen,
D. G. Hinks,
B. Dabrowski
Abstract:
In previous studies on a number of under- and overdoped high temperature superconductors, including YBa_{2}Cu_{3}O_{7-y} and Tl_{2}Ba_{2}CuO_{6+δ}, the transition temperature T_c has been found to change with time in a manner which depends on the sample's detailed temperature and pressure history. This relaxation behavior in T_c is believed to originate from rearrangements within the oxygen subl…
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In previous studies on a number of under- and overdoped high temperature superconductors, including YBa_{2}Cu_{3}O_{7-y} and Tl_{2}Ba_{2}CuO_{6+δ}, the transition temperature T_c has been found to change with time in a manner which depends on the sample's detailed temperature and pressure history. This relaxation behavior in T_c is believed to originate from rearrangements within the oxygen sublattice. In the present high-pressure studies on HgBa_{2}CuO_{4+δ} to 0.8 GPa we find clear evidence for weak relaxation effects in strongly under- and overdoped samples ($T_c\simeq 40 - 50 K$) with an activation energy $E_{A}(1 bar) \simeq 0.8 - 0.9 eV$. For overdoped HgBa_{2}CuO_{4+δ} E_{A} increases under pressure more rapidly than previously observed for YBa_{2}Cu_{3}O_{6.41}, yielding an activation volume of +11 \pm 5 cm^{3}; the dependence of T_c on pressure is markedly nonlinear, an anomalous result for high-T_c superconductors in the present pressure range, giving evidence for a change in the electronic and/or structural properties near 0.4 GPa.
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Submitted 21 May, 1999;
originally announced May 1999.
