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Effects of Solar Eclipse of March 20, 2015 on the Ionosphere
Authors:
Dario Sabbagh,
Carlo Scotto,
Alessandro Ippolito,
Alessandro Settimi,
Vittorio Sgrigna
Abstract:
The effects of the solar eclipse of March 20, 2015 on different ionospheric layers were studied, using vertical ionospheric soundings from the ionosondes of Rome (41.8N, 12.5E), Gibilmanna (37.9N, 14.0E), and San Vito dei Normanni (40.6N, 18.0E). The responses of the critical frequencies were investigated during the solar eclipse, and the formulations used for their estimation were corrected takin…
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The effects of the solar eclipse of March 20, 2015 on different ionospheric layers were studied, using vertical ionospheric soundings from the ionosondes of Rome (41.8N, 12.5E), Gibilmanna (37.9N, 14.0E), and San Vito dei Normanni (40.6N, 18.0E). The responses of the critical frequencies were investigated during the solar eclipse, and the formulations used for their estimation were corrected taking into account the decreased solar irradiance. This effect was modeled as a Solar Obscuration Factor (SOF) and comparisons with experimental values were performed. A further study on the occurrence of the sporadic E layer during the eclipse is presented. When ionogram analysis is limited to 3 days before and 3 days after the eclipse, the appearance of the sporadic E layer seems to be related to the eclipse. However, when a longer range of days before and after the eclipse event are taken into account this phenomenon does not appear so clear. The behavior of a regional adaptive and assimilative 3D ionospheric model was also tested, assimilating plasma frequency profiles fp(h). Studying the behavior of the model in such unusual conditions enabled the introduction of corrections to the foE, foF1, and foF2 formulations, improving the performances of the model itself.
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Submitted 28 July, 2021;
originally announced July 2021.
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Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
Authors:
B. Paquelet Wuetz,
P. L. Bavdaz,
L. A. Yeoh,
R. Schouten,
H. van der Does,
M. Tiggelman,
D. Sabbagh,
A. Sammak,
C. G. Almudever,
F. Sebastiano,
J. S. Clarke,
M. Veldhorst,
G. Scappucci
Abstract:
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating…
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Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
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Submitted 26 July, 2019;
originally announced July 2019.
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Manifold-regression to predict from MEG/EEG brain signals without source modeling
Authors:
David Sabbagh,
Pierre Ablin,
Gael Varoquaux,
Alexandre Gramfort,
Denis A. Engemann
Abstract:
Magnetoencephalography and electroencephalography (M/EEG) can reveal neuronal dynamics non-invasively in real-time and are therefore appreciated methods in medicine and neuroscience. Recent advances in modeling brain-behavior relationships have highlighted the effectiveness of Riemannian geometry for summarizing the spatially correlated time-series from M/EEG in terms of their covariance. However,…
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Magnetoencephalography and electroencephalography (M/EEG) can reveal neuronal dynamics non-invasively in real-time and are therefore appreciated methods in medicine and neuroscience. Recent advances in modeling brain-behavior relationships have highlighted the effectiveness of Riemannian geometry for summarizing the spatially correlated time-series from M/EEG in terms of their covariance. However, after artefact-suppression, M/EEG data is often rank deficient which limits the application of Riemannian concepts. In this article, we focus on the task of regression with rank-reduced covariance matrices. We study two Riemannian approaches that vectorize the M/EEG covariance between-sensors through projection into a tangent space. The Wasserstein distance readily applies to rank-reduced data but lacks affine-invariance. This can be overcome by finding a common subspace in which the covariance matrices are full rank, enabling the affine-invariant geometric distance. We investigated the implications of these two approaches in synthetic generative models, which allowed us to control estimation bias of a linear model for prediction. We show that Wasserstein and geometric distances allow perfect out-of-sample prediction on the generative models. We then evaluated the methods on real data with regard to their effectiveness in predicting age from M/EEG covariance matrices. The findings suggest that the data-driven Riemannian methods outperform different sensor-space estimators and that they get close to the performance of biophysics-driven source-localization model that requires MRI acquisitions and tedious data processing. Our study suggests that the proposed Riemannian methods can serve as fundamental building-blocks for automated large-scale analysis of M/EEG.
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Submitted 22 November, 2019; v1 submitted 4 June, 2019;
originally announced June 2019.
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Light effective hole mass in undoped Ge/SiGe quantum wells
Authors:
M. Lodari,
A. Tosato,
D. Sabbagh,
M. A. Schubert,
G. Capellini,
A. Sammak,
M. Veldhorst,
G. Scappucci
Abstract:
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal dam** of the amplitude of Shubnikov-de Haas oscillations, we meas…
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We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal dam** of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2\times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of $\sim0.05m_e$ at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
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Submitted 20 May, 2019;
originally announced May 2019.
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Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
Authors:
D. Sabbagh,
N. Thomas,
J. Torres,
R. Pillarisetty,
P. Amin,
H. C. George,
K. Singh,
A. Budrevich,
M. Robinson,
D. Merrill,
L. Ross,
J. Roberts,
L. Lampert,
L. Massa,
S. Amitonov,
J. Boter,
G. Droulers,
H. G. J. Eenink,
M. van Hezel,
D. Donelson,
M. Veldhorst,
L. M. K. Vandersypen,
J. S. Clarke,
G. Scappucci
Abstract:
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of…
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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Submitted 21 January, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Authors:
A. Sammak,
D. Sabbagh,
N. W. Hendrickx,
M. Lodari,
B. Paquelet Wuetz,
L. Yeoh,
M. Bollani,
M. Virgilio,
M. A. Schubert,
P. Zaumseil,
G. Capellini,
M. Veldhorst,
G. Scappucci
Abstract:
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm…
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Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm$^2$/Vs) in a very shallow strained germanium channel, which is located only 22 nm below the surface. This high mobility leads to mean free paths $\approx6 μm$, setting new benchmarks for holes in shallow FET devices. Carriers are confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The top-gate of a dopant-less field effect transistor controls the carrier density in the channel. The high mobility, along with a percolation density of $1.2\times 10^{11}\text{ cm}^{-2}$, light effective mass (0.09 m$_e$), and high g-factor (up to $7$) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies.
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Submitted 7 September, 2018;
originally announced September 2018.
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Gate-controlled quantum dots and superconductivity in planar germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
M. Kouwenhoven,
D. Sabbagh,
L. Yeoh,
R. Li,
M. L. V. Tagliaferri,
M. Virgilio,
G. Capellini,
G. Scappucci,
M. Veldhorst
Abstract:
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we reali…
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Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into a material system with strong spin-orbit coupling. In our germanium heterostructures, heavy holes with mobilities exceeding 500,000 cm$^2$/Vs are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We demonstrate gate-tunable superconductivity and find a characteristic voltage $I_cR_n$ that exceeds 10 $μ$V. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material in the quantum revolution.
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Submitted 26 January, 2018;
originally announced January 2018.
