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Rotating spintronic terahertz emitter optimized for microjoule pump-pulse energies and megahertz repetition rates
Authors:
Alkisti Vaitsi,
Vivien Sleziona,
Luis E. Parra López,
Yannic Behovits,
Fabian Schulz,
Natalia Martín Sabanés,
Tobias Kampfrath,
Martin Wolf,
Tom S. Seifert,
Melanie Müller
Abstract:
Spintronic terahertz emitters (STEs) are powerful sources of ultra-broadband single-cycle terahertz (THz) field transients. They work with any pump wavelength, and their polarity and polarization direction are easily adjustable. However, at high pump powers and high repetition rates, STE operation is hampered by a significant increase in the local temperature. Here, we resolve this issue by rotati…
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Spintronic terahertz emitters (STEs) are powerful sources of ultra-broadband single-cycle terahertz (THz) field transients. They work with any pump wavelength, and their polarity and polarization direction are easily adjustable. However, at high pump powers and high repetition rates, STE operation is hampered by a significant increase in the local temperature. Here, we resolve this issue by rotating the STE at a few 100 Hz, thereby distributing the absorbed pump power over a larger area. Our approach permits stable STE operation at a fluence of ~1 mJ/cm$^2$ with up to 18 W pump power at megahertz repetition rates, corresponding to pump-pulse energies of a few 10 $μ$J and a power density far above the melting threshold of metallic films. The rotating STE is of interest for all ultra-broadband high-power THz applications requiring high repetition rates. As an example, we show that THz pulses with peak fields of 10 kV/cm can be coupled to a THz-lightwave-driven scanning tunneling microscope at 1 MHz repetition rate, demonstrating that the rotating STE can compete with standard THz sources such as LiNbO$_3$.
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Submitted 25 April, 2024;
originally announced April 2024.
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Femtosecond Thermal and Nonthermal Hot Electron Tunneling inside a Photoexcited Tunnel Junction
Authors:
Natalia Martín Sabanés,
Faruk Krecinic,
Takashi Kumagai,
Fabian Schulz,
Martin Wolf,
Melanie Müller
Abstract:
Efficient operation of electronic nanodevices at ultrafast speeds requires understanding and control of the currents generated by femtosecond bursts of light. Ultrafast laser-induced currents in metallic nanojunctions can originate from photo-assisted hot electron tunneling or lightwave-induced tunneling. Both processes can drive localized photocurrents inside a scanning tunneling microscope (STM)…
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Efficient operation of electronic nanodevices at ultrafast speeds requires understanding and control of the currents generated by femtosecond bursts of light. Ultrafast laser-induced currents in metallic nanojunctions can originate from photo-assisted hot electron tunneling or lightwave-induced tunneling. Both processes can drive localized photocurrents inside a scanning tunneling microscope (STM) on femto- to attosecond time scales, enabling ultrafast STM with atomic spatial resolution. Femtosecond laser excitation of a metallic nanojunction, however, also leads to the formation of a transient thermalized electron distribution, but the tunneling of thermalized hot electrons on time scales faster than electron-lattice equilibration is not well understood. Here, we investigate ultrafast electronic heating and transient thermionic tunneling inside a metallic photoexcited tunnel junction and its role in the generation of ultrafast photocurrents in STM. Phase-resolved sampling of broadband THz pulses via the THz-field-induced modulation of ultrafast photocurrents allows us to probe the electronic temperature evolution inside the STM tip, and to observe the competition between instantaneous and delayed tunneling due to nonthermal and thermal hot electron distributions in real time. Our results reveal the pronounced nonthermal character of photo-induced hot electron tunneling, and provide a detailed microscopic understanding of hot electron dynamics inside a laser-excited tunnel junction.
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Submitted 17 May, 2022;
originally announced May 2022.
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Average power scaling of THz spintronic emitters in reflection geometry
Authors:
Tim Vogel,
Alan Omar,
Samira Mansourzadeh,
Frank Wulf,
Natalia Martín Sabanés,
Melanie Müller,
Tom S. Seifert,
Alexander Weigel,
Gerhard Jakob,
Mathias Kläui,
Ioachim Pupeza,
Tobias Kampfrath,
Clara J. Saraceno
Abstract:
Metallic spintronic THz emitters have become well-established for offering ultra-broadband, gap-less THz emission in a variety of excitation regimes, in combination with reliable fabrication and excellent scalability. However, so far, their potential for high-average-power excitation to reach strong THz fields at high repetition rates has not been thoroughly investigated. In this article, we explo…
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Metallic spintronic THz emitters have become well-established for offering ultra-broadband, gap-less THz emission in a variety of excitation regimes, in combination with reliable fabrication and excellent scalability. However, so far, their potential for high-average-power excitation to reach strong THz fields at high repetition rates has not been thoroughly investigated. In this article, we explore the power scaling behavior of tri-layer spintronic emitters using an Yb-fiber excitation source, delivering an average power of 18.5 W at 400 kHz repetition rate, temporally compressed to a pulse duration of 27 fs. We confirm that the reflection geometry with back-side cooling is ideally suited for these emitters in the high-average-power excitation regime. In order to understand limiting mechanisms, we disentangle the effects on THz power generation by average power and pulse energy, by varying the repetition rate of the laser. Our results show that the conversion efficiency remains mostly dependent on the incident fluence in this high-average-power, high-repetition-rate excitation regime if the emitters are efficiently cooled. Using these findings, we optimize the conversion efficiency to reach 5e-6 at highest excitation powers in the back-cooled reflection geometry. Our findings provide guidelines for scaling the power of THz radiation emitted by spintronic emitters to the mW-level by using state-of-the-art femtosecond sources with multi-hundred-Watt average power to reach ultra-broadband, strong-field THz sources with high repetition rate.
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Submitted 12 January, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Phase-resolved Detection of Ultrabroadband THz Pulses inside a Scanning Tunneling Microscope Junction
Authors:
Melanie Müller,
Natalia Martín Sabanés,
Tobias Kampfrath,
Martin Wolf
Abstract:
Coupling phase-stable single-cycle terahertz (THz) pulses to scanning tunneling microscope (STM) junctions enables spatio-temporal imaging with femtosecond temporal and Ångstrom spatial resolution. The time resolution achieved in such THz-gated STM is ultimately limited by the sub-cycle temporal variation of the tip-enhanced THz field acting as an ultrafast voltage pulse, and hence by the ability…
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Coupling phase-stable single-cycle terahertz (THz) pulses to scanning tunneling microscope (STM) junctions enables spatio-temporal imaging with femtosecond temporal and Ångstrom spatial resolution. The time resolution achieved in such THz-gated STM is ultimately limited by the sub-cycle temporal variation of the tip-enhanced THz field acting as an ultrafast voltage pulse, and hence by the ability to feed high-frequency, broadband THz pulses into the junction. Here, we report on the coupling of ultrabroadband (1-30 THz) single-cycle THz pulses from a spintronic THz emitter(STE) into a metallic STM junction. We demonstrate broadband phase-resolved detection of the THz voltage transient directly in the STM junction via THz-field-induced modulation of ultrafast photocurrents. Comparison to the unperturbed far-field THz waveform reveals the antenna response of the STM tip. Despite tip-induced low-pass filtering, frequencies up to 15 THz can be detected in the tip-enhanced near-field, resulting in THz transients with a half-cycle period of 115 fs. We further demonstrate simple polarity control of the THz bias via the STE magnetization, and show that up to 2 V THz bias at 1 MHz repetition rate can be achieved in the current setup. Finally, we find a nearly constant THz voltage and waveform over a wide range of tip-sample distances, which by comparison to numerical simulations confirms the quasi-static nature of the THz pulses. Our results demonstrate the suitability of spintronic THz emitters for ultrafast THz-STM with unprecedented bandwidth of the THz bias, and provide insight into the femtosecond response of defined nanoscale junctions.
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Submitted 27 August, 2020; v1 submitted 20 March, 2020;
originally announced March 2020.
