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Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Authors:
Abhijit Biswas,
Rishi Maiti,
Frank Lee,
Cecilia Y. Chen,
Tao Li,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
Md Abid Shahriar Rahman Saadi,
Jacob Elkins,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Yuji Zhao,
Alexander L. Gaeta,
Manoj Tripathi,
Alan Dalton,
Pulickel M. Ajayan
Abstract:
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff…
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Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget.
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Submitted 12 October, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Processing Dynamics of 3D-Printed Carbon Nanotubes-Epoxy Composites
Authors:
Ali Khater,
Sohini Bhattacharyya,
M. A. S. R. Saadi,
Morgan Barnes,
Minghe Lou,
Vijay Harikrishnan,
Seyed Mohammad Sajadi,
Peter J. Boul,
Chandra Sekhar Tiwary,
Hanyu Zhu,
Muhammad M. Rahman,
Pulickel M. Ajayan
Abstract:
Carbon Nanotubes (CNTs)-polymer composites are promising candidates for a myriad of applications. Ad-hoc CNTs-polymer composite fabrication techniques inherently pose roadblock to optimized processing resulting in microstructural defects i.e., void formation, poor interfacial adhesion, wettability, and agglomeration of CNTs inside the polymer matrix. Although improvement in the microstructures can…
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Carbon Nanotubes (CNTs)-polymer composites are promising candidates for a myriad of applications. Ad-hoc CNTs-polymer composite fabrication techniques inherently pose roadblock to optimized processing resulting in microstructural defects i.e., void formation, poor interfacial adhesion, wettability, and agglomeration of CNTs inside the polymer matrix. Although improvement in the microstructures can be achieved via additional processing steps such as-mechanical methods and/or chemical functionalization, the resulting composites are somewhat limited in structural and functional performances. Here, we demonstrate that 3D printing technique like-direct ink writing offers improved processing of CNTs-polymer composites. The shear-induced flow of an engineered nanocomposite ink through the micronozzle offers some benefits including reducing the number of voids within the epoxy, improving CNTs dispersion and adhesion with epoxy, and partially aligns the CNTs. Such microstructural changes result in superior mechanical performance and heat transfer in the composites compared to their mold-casted counterparts. This work demonstrates the advantages of 3D printing over traditional fabrication methods, beyond the ability to rapidly fabricate complex architectures, to achieve improved processing dynamics for fabricating CNT-polymer nanocomposites with better structural and functional properties.
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Submitted 3 March, 2021;
originally announced March 2021.
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Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale
Authors:
Rishi Maiti,
Md Abid Shahriar Rahman Saadi,
Rubab Amin,
Ongun Ozcelik,
Berkin Uluutku,
Chandraman Patil,
Can Suer,
Santiago Solares,
Volker J. Sorger
Abstract:
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for exam…
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Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
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Submitted 14 December, 2020;
originally announced December 2020.
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Few-layer flakes of Molybdenum Disulphide produced by anodic arc discharge in pulsed mode
Authors:
Carles Corbella,
Sabine Portal,
M. A. S. R. Saadi,
Santiago D. Solares,
Madhusudhan N. Kundrapu,
Michael Keidar
Abstract:
Here, the synthesis of Molybdenum Disulphide (MoS2) flakes by means of anodic atmospheric arc discharge is reported for the first time. The vertical electrode configuration consisted of a compound anode (hollow graphite anode filled with MoS2 powder) and a solid graphite cathode placed just above of the compound anode. Arc processes were operated in pulsed mode to preferentially evaporate the powd…
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Here, the synthesis of Molybdenum Disulphide (MoS2) flakes by means of anodic atmospheric arc discharge is reported for the first time. The vertical electrode configuration consisted of a compound anode (hollow graphite anode filled with MoS2 powder) and a solid graphite cathode placed just above of the compound anode. Arc processes were operated in pulsed mode to preferentially evaporate the powder component from the anode and to minimize Carbon ablation. Pulsed anodic arc discharges were conducted at 2 Hz and 10% duty cycle in 300 Torr of Helium with a peak current of 250-300 A and peak voltage of 35 V. A probe made of Tungsten wire was placed in the vicinity of the arc column to collect the evaporated material. The measured thickness profile was correlated to the particle flux distribution and it was fitted by a simple model of plasma expansion. During pulse phase, electron density was estimated around 5E22 m-3 or higher, and ion current density was of the order of 10 A/mm2. Morphology, structure and composition of the samples were characterized by Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray diffraction (XRD). The study shows that pulsed arc discharge of the compound anode leads to moderate C deposition combined with MoS2 deposition in the form of fragmented nanocrystals and few atomic monolayers of MoS2. Such synthesis technique is promising to produce new 2D nanomaterials with tailored structure and functionality thanks to the flexibility of pulsed power.
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Submitted 27 November, 2019;
originally announced January 2020.
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Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
Authors:
R. Maiti,
C. Patil,
T. Xie,
J. G. Azadani,
M. A. S. R. Saadi,
R. Amin,
M. Miscuglio,
D. Van Thourhout,
S. D. Solares,
T. Low,
R. Agarwal,
S. Bank,
V. J. Sorger
Abstract:
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or exci…
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In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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Submitted 22 December, 2019; v1 submitted 31 October, 2019;
originally announced December 2019.
