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Towards low-dimensional hole systems in Be-doped GaAs nanowires
Authors:
A. R. Ullah,
J. G. Gluschke,
P. Krogstrup,
C. B. Sørensen,
J. Nygård,
A. P. Micolich
Abstract:
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts…
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GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-do** densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately-doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate do**, with conduction freezing out at low temperature for lowly-doped nanowires and inability to reach a clear off-state under gating for the highly-doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio ~$10^{4}$, and sub-threshold slope 50 mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantization highlighting the potential for future quantum device studies in this material system.
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Submitted 12 April, 2017;
originally announced April 2017.
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Advances in the theory of III-V Nanowire Growth Dynamics
Authors:
Peter Krogstrup,
Henrik I. Jørgensen,
Erik Johnson,
Morten Hannibal Madsen,
Claus B. Sørensen,
Anna Fontcuberta i Morral,
Martin Aagesen,
Jesper Nygård,
Frank Glas
Abstract:
Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics b…
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Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.
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Submitted 17 July, 2013; v1 submitted 30 January, 2013;
originally announced January 2013.
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Do** incorporation paths in catalyst-free Be-doped GaAs nanowires
Authors:
Alberto Casadei,
Peter Krogstrup,
Martin Heiss,
Jason A. Röhr,
Carlo Colombo,
Thibaud Ruelle,
Shivendra Upadhyay,
Claus B. Sørensen,
Jesper Nygård,
Anna Fontcuberta i Morral
Abstract:
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volum…
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The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled do** of nanowires and will serve as a help for designing future devices based on nanowires.
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Submitted 5 October, 2012;
originally announced October 2012.
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Mesoscopic conductance fluctuations in InAs nanowire-based SNS junctions
Authors:
T. S. Jespersen,
M. L. Polianski,
C. B. Soerensen,
K. Flensberg,
J. Nygaard
Abstract:
We report a systematic experimental study of mesoscopic conductance fluctuations in superconductor/normal/superconductor (SNS) devices Nb/InAs-nanowire/Nb. These fluctuations far exceed their value in the normal state and strongly depend on temperature even in the low-temperature regime. This dependence is attributed to high sensitivity of perfectly conducting channels to dephasing and the SNS f…
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We report a systematic experimental study of mesoscopic conductance fluctuations in superconductor/normal/superconductor (SNS) devices Nb/InAs-nanowire/Nb. These fluctuations far exceed their value in the normal state and strongly depend on temperature even in the low-temperature regime. This dependence is attributed to high sensitivity of perfectly conducting channels to dephasing and the SNS fluctuations thus provide a sensitive probe of dephasing in a regime where normal transport fails to detect it. Further, the conductance fluctuations are strongly non-linear in bias voltage and reveal sub-gap structure. The experimental findings are qualitatively explained in terms of multiple Andreev reflections in chaotic quantum dots with imperfect contacts.
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Submitted 26 May, 2009; v1 submitted 27 January, 2009;
originally announced January 2009.
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Single-electron transport driven by surface acoustic waves: moving quantum dots versus short barriers
Authors:
P. Utko,
J. Bindslev Hansen,
P. E. Lindelof,
C. B. Sorensen,
K. Gloos
Abstract:
We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when the frequency f of the surface-acoustic wave or the gate voltage Vg of the point contact is varied. A pronounced 1.1 MHz beat period of the current in…
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We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when the frequency f of the surface-acoustic wave or the gate voltage Vg of the point contact is varied. A pronounced 1.1 MHz beat period of the current indicates that the interference of the surface-acoustic wave with reflected waves matters. This is supported by the results obtained after a second independent beam of surface-acoustic wave was added, traveling in opposite direction. We have found that two sub-intervals can be distinguished within the 1.1 MHz modulation period, where two different sets of plateaus dominate the acoustoelectric-current versus gate-voltage characteristics. In some cases, both types of quantized steps appeared simultaneously, though at different current values, as if they were superposed on each other. Their presence could result from two independent quantization mechanisms for the acoustoelectric current. We point out that short potential barriers determining the properties of our nominally long constrictions could lead to an additional quantization mechanism, independent from those described in the standard model of 'moving quantum dots'.
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Submitted 9 November, 2006;
originally announced November 2006.
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Different quantization mechanisms in single-electron pumps driven by surface acoustic waves
Authors:
P. Utko,
K. Gloos,
J. Bindslev Hansen,
C. B. Sorensen,
P. E. Lindelof
Abstract:
We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on eac…
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We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on each other. This could indicate two independent quantization mechanisms for the acoustoelectric current.
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Submitted 8 November, 2006;
originally announced November 2006.
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Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures
Authors:
M. Kubisa,
L. Bryja,
K. Ryczko,
J. Misiewicz,
C. Bardot,
M. Potemski,
G. Ortner,
M. Bayer,
A. Forchel,
C. B. Sorensen
Abstract:
We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new n…
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We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.
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Submitted 26 November, 2002;
originally announced November 2002.
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Dilation of the Giant Vortex State in a Mesoscopic Superconducting Loop
Authors:
S. Pedersen,
G. R. Kofod,
J. C. Hollingbery,
C. B. Sørensen,
P. E. Lindelof
Abstract:
We have experimentally investigated the magnetisation of a mesoscopic aluminum loop at temperatures well below the superconducting transition temperature $T_{c}$. The flux quantisation of the superconducting loop was investigated with a $μ$-Hall magnetometer in magnetic field intensities between $\pm 100 {Gauss}$. The magnetic field intensity periodicity observed in the magnetization measurement…
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We have experimentally investigated the magnetisation of a mesoscopic aluminum loop at temperatures well below the superconducting transition temperature $T_{c}$. The flux quantisation of the superconducting loop was investigated with a $μ$-Hall magnetometer in magnetic field intensities between $\pm 100 {Gauss}$. The magnetic field intensity periodicity observed in the magnetization measurements is expected to take integer values of the superconducting flux quanta $Φ_{0}=h/2e$. A closer inspection of the periodicity, however, reveal a sub flux quantum shift. This fine structure we interpret as a consequence of a so called giant vortex state nucleating towards either the inner or the outer side of the loop. These findings are in agreement with recent theoretical reports.
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Submitted 11 July, 2001;
originally announced July 2001.
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Mesoscopic decoherence in Aharonov-Bohm rings
Authors:
A. E. Hansen,
A. Kristensen,
S. Pedersen,
C. B. Sorensen,
P. E. Lindelof
Abstract:
We study electron decoherence by measuring the temperature dependence of Aharonov-Bohm (AB) oscillations in quasi-1D rings, etched in a high-mobility GaAs/GaAlAs heterostructure. The oscillation amplitude is influenced both by phase-breaking and by thermal averaging. Thermal averaging is important when the temperature approaches the energy scale, on which the AB oscillations shift their phase. F…
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We study electron decoherence by measuring the temperature dependence of Aharonov-Bohm (AB) oscillations in quasi-1D rings, etched in a high-mobility GaAs/GaAlAs heterostructure. The oscillation amplitude is influenced both by phase-breaking and by thermal averaging. Thermal averaging is important when the temperature approaches the energy scale, on which the AB oscillations shift their phase. For the phase-breaking, it is demonstrated that the dam** of the oscillation amplitude is proportional to the length of the interfering paths. For temperatures $T$ from 0.3 to 4 $\rm K$ we find the phase coherence length $\it L_φ$ $\propto$ $T^{-1}$, close to what has been reported for open quantum dots. This might indicate that the $T^{-1}$ decoherence rate is a general property of open and ballistic mesoscopic systems.
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Submitted 8 May, 2001; v1 submitted 6 February, 2001;
originally announced February 2001.
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Bias and temperature dependence of the 0.7 conductance anomaly in Quantum Point Contacts
Authors:
A. Kristensen,
H. Bruus,
A. E. Hansen,
J. B. Jensen,
P. E. Lindelof,
C. J. Marckmann,
J. Nygard,
C. B. Sorensen,
F. Beuscher,
A. Forchel,
M. Michel
Abstract:
The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in detail how, for a given gate voltage, the differential conductance depends on the finite bias voltage and find a so-called self-gating effect,…
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The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in detail how, for a given gate voltage, the differential conductance depends on the finite bias voltage and find a so-called self-gating effect, which we correct for. The 0.7 anomaly at zero bias is found to evolve smoothly into a conductance plateau at 0.85 (2e^2/h) at finite bias. Varying the gate voltage the transition between the 1.0 and the 0.85 (2e^2/h) plateaus occurs for definite bias voltages, which defines a gate voltage dependent energy difference $Δ$. This energy difference is compared with the activation temperature T_a extracted from the experimentally observed activated behavior of the 0.7 anomaly at low bias. We find Δ= k_B T_a which lends support to the idea that the conductance anomaly is due to transmission through two conduction channels, of which the one with its subband edge Δbelow the chemical potential becomes thermally depopulated as the temperature is increased.
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Submitted 3 May, 2000;
originally announced May 2000.
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Investigation of the Mesoscopic Aharonov-Bohm effect in Low Magnetic Fields
Authors:
A. E. Hansen,
S. Pedersen,
A. Kristensen,
C. B. Sorensen,
P. E. Lindelof
Abstract:
We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agree…
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We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agreement with the experiment, by introducing an asymmetry between the two arms of the ring.
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Submitted 16 September, 1999;
originally announced September 1999.
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Observation of supercurrent enhancement in SNS junctions by non-equilibrium injection into supercurrent carrying bound Andreev states
Authors:
Jonatan Kutchinsky,
Rafael Taboryski,
Claus B. Sorensen,
Jorn Bindslev Hansen,
Poul Erik Lindelof
Abstract:
We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=Δ(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-e…
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We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=Δ(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-equilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished.
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Submitted 28 September, 1999; v1 submitted 30 July, 1999;
originally announced July 1999.
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Weak localisation in AlGaAs/GaAs p-type quantum wells
Authors:
S. Pedersen,
C. B. Sorensen,
A. Kristensen,
P. E. Lindelof,
L. E. Golub,
N. S. Averkiev
Abstract:
We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compa…
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We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compare the experimental results with a newly developed diffusion theory, which explicitly describes the weak localisation regime when the spin-orbit coupling is strong. The spin relaxation rates calculated from the fitting parameters was found to agree with theoretical expectations. Furthermore the fitting parameters indicate an enhanced phase breaking rate compared to theoretical predictions.
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Submitted 1 June, 1999; v1 submitted 5 May, 1999;
originally announced May 1999.
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Observation of Quantum Asymmetry in an Aharonov-Bohm Ring
Authors:
S. Pedersen,
A. E. Hansen,
A. Kristensen,
C. B. Soerensen,
P. E. Lindelof
Abstract:
We have investigated the Aharonov-Bohm effect in a one-dimensional GaAs/GaAlAs ring at low magnetic fields. The oscillatory magnetoconductance of these systems are for the first time systematically studied as a function of density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find ag…
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We have investigated the Aharonov-Bohm effect in a one-dimensional GaAs/GaAlAs ring at low magnetic fields. The oscillatory magnetoconductance of these systems are for the first time systematically studied as a function of density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agreement with the experiment, by introducing an asymmetry between the two arms of the ring.
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Submitted 10 May, 1999; v1 submitted 4 May, 1999;
originally announced May 1999.
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Multiple Andreev reflections in diffusive SNS structures
Authors:
Rafael Taboryski,
Jonatan Kutchinsky,
Jorn Bindslev Hansen,
Morten Wildt,
Claus B. Sorensen,
Poul Erik Lindelof
Abstract:
We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal superc…
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We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal supercurrent Ic=3mA at T=237mK was observed. The sub-gap structure was observed as a series of local minima in the differential resistance at dc bias voltages V=2D/ne with n=1,2,4 i.e. only the even sub-gap positions. While at V=2D/e (n=1) only one dip is observed, the n=2, and the n=4 sub-gap structures each consists of two separate dips in the differential resistance. The mutual spacing of these two dips is independent of temperature, and the mutual spacing of the n=4 dips is half of the spacing of the n=2 dips. The voltage bias positions of the sub-gap differential resistance minima coincide with the maxima in the oscillation amplitude when a magnetic field is applied in an interferometer configuration, where one of the superconducting electrodes has been replaced by a flux sensitive open loop.
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Submitted 15 January, 1999; v1 submitted 14 January, 1999;
originally announced January 1999.
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Activated Behavior of the 0.7 2(e^2)/h Conductance Anomaly in Quantum Point Contacts
Authors:
A. Kristensen,
H. Bruus,
A. Forchel,
J. B. Jensen,
P. E. Lindelof,
M. Michel,
J. Nygard,
C. B. Sorensen
Abstract:
The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements an…
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The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements and the finite bias, low temperature 0.9 anomaly found in transport spectroscopy have the same origin: a density dependent excitation gap.
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Submitted 5 August, 1998; v1 submitted 2 August, 1998;
originally announced August 1998.
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Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression
Authors:
V. Kravchenko,
N. Minina,
A. Savin,
C. B. Sorensen,
O. P. Hansen,
W. Kraak
Abstract:
Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniax…
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Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al$_{0.5}$Ga$_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time $τ_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.
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Submitted 3 March, 1998;
originally announced March 1998.
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Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells
Authors:
T. Hassenkam,
S. Pedersen,
K. Baklanov,
A. Kristensen,
C. B. Sorensen,
P. E. Lindelof,
F. G. Pikus,
G. E. Pikus
Abstract:
We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the Dresselhaus terms, which arise due to the lack of inversion center in the bulk GaAs, and the Rashba terms, which are caused by the asymmetry of the quantum we…
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We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the Dresselhaus terms, which arise due to the lack of inversion center in the bulk GaAs, and the Rashba terms, which are caused by the asymmetry of the quantum well. It is shown that in A3B5 quantum wells the magnetoresistance due to the weak localization depends qualitatively on the orientation of the well. In particular, it is demonstrated that the (110) geometry has a distinctive feature that in the absence of the Rashba terms the ``antilocalization'' effect, i.e. the positive magnetoresistance, does not exist. Calculation of the weak anti-localization magnetoresistance is found to be in excellent agreement with experiments.
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Submitted 23 August, 1996;
originally announced August 1996.
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Magnetoresistance of a 2-dimensional electron gas in a random magnetic field
Authors:
Anders Smith,
Rafael Taboryski,
Luise Theil Hansen,
Claus B. Sorensen,
Per Hedegard,
P. E. Lindelof
Abstract:
We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given w…
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We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation.
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Submitted 25 July, 1994;
originally announced July 1994.
