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Silicon nitride integrated photonics from visible to mid-infrared spectra
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Sergey V. Bukatin,
Ilya A. Stepanov,
Aleksey B. Kramarenko,
Ali Sh. Amiraslanov,
Danil V. Kushnev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneo…
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Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneous integration with a III-V platform leads to a new advanced large scale PICs with thousands of elements. Here, we review key trends in Si3N4 integrated circuits technology and fill an information gap in the field of state-of-the-art photonic devices operating from visible to mid-infrared spectra. A comprehensive overview of Si3N4 integrared circtuis microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, we point out the limits and challenges of silicon nitride photonics performance in an ultrawide range providing routes and prospects for their future scaling and optimization.
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Submitted 16 May, 2024;
originally announced May 2024.
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Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing
Authors:
N. D. Korshakov,
D. O. Moskalev,
A. A. Soloviova,
D. A. Moskaleva,
E. S. Lotkov,
A. R. Ibragimov,
M. V. Androschuk,
I. A. Ryzhikov,
Y. V. Panfilov,
I. A. Rodionov
Abstract:
Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art nanoelectronic processes one can fabricate hundreds of qubits on a single silicon chip. However, decoherence in these systems caused by two-level-systems in amorphous die…
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Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art nanoelectronic processes one can fabricate hundreds of qubits on a single silicon chip. However, decoherence in these systems caused by two-level-systems in amorphous dielectrics, including a tunneling barrier AlOx, is one of the major problems. We report on a Josephson junction thermal annealing process development to crystallize an amorphous barrier oxide (AlOx). The dependences of the thermal annealing parameters on the room temperature resistance are obtained. The developed method allows not only to increase the Josephson junction resistance by 175%, but also to decrease by 60% with precisions of 10% in Rn. Finally, theoretical assumptions about the structure modification in tunnel barrier are proposed. The suggested thermal annealing approach can be used to form a stable and reproducible tunneling barriers and scalable frequency trimming for a widely used fixed-frequency transmon qubits.
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Submitted 4 March, 2024;
originally announced March 2024.
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Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors
Authors:
Ilya A. Stepanov,
Aleksandr S. Baburin,
Danil V. Kushnev,
Evgeniy V. Sergeev,
Oksana I. Shmonina,
Aleksey R. Matanin,
Vladimir V. Echeistov,
Ilya A. Ryzhikov,
Yuri V. Panfilov,
Ilya A. Rodionov
Abstract:
Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with a desired properties. Here, we report on the major theoretical relations between ultra…
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Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with a desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) films properties and superconducting nanowire single-photon detectors characteristics, as well as ultrathin NbN films properties dependence on reactive magnetron sputtering recipes. Based on this study we formulate the exact requirements to ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally study ultrathin NbN films properties (morphology, crystalline structure, critical temperature, sheet resistance) on silicon, sapphire, silicon dioxide and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 ~$Ω$/sq, as well as investigate a sheet resistance evolution over for more than 40\% within two years. Finally, we found out that one should use ultrathin NbN films with specific critical temperature near 9 K and sheet resistance of 400 ~$Ω$/sq for ultrahigh performance SNSPD.
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Submitted 28 November, 2023;
originally announced November 2023.
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Integrated membrane-free thermal flow sensor for silicon-on-glass microfluidics
Authors:
Vitaly V. Ryzhkov,
Vladimir V. Echeistov,
Aleksandr V. Zverev,
Dmitry A. Baklykov,
Tatyana Konstantinova,
Evgeny S. Lotkov,
Pavel G. Ryazantcev,
Ruslan Sh. Alibekov,
Aleksey K. Kuguk,
Andrey R. Aleksandrov,
Elisey S. Krasko,
Anastasiya A. Barbasheva,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Lab-on-a-chip (LOC) forms the basis of the new-generation portable analytical systems. LOC allows the manipulation of ultralow flows of liquid reagents and multistep reactions on a microfluidic chip, which requires a robust and precise instrument to control the flow of liquids on a chip. However, commercially available flow meters appear to be a standalone option adding a significant dead volume o…
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Lab-on-a-chip (LOC) forms the basis of the new-generation portable analytical systems. LOC allows the manipulation of ultralow flows of liquid reagents and multistep reactions on a microfluidic chip, which requires a robust and precise instrument to control the flow of liquids on a chip. However, commercially available flow meters appear to be a standalone option adding a significant dead volume of tubes for connection to the chip. Furthermore, most of them cannot be fabricated within the same technological cycle as microfluidic channels. Here, we report on a membrane-free microfluidic thermal flow sensor (MTFS) that can be integrated into a silicon-glass microfluidic chip with a microchannel topology. We propose a membrane-free design with thin-film thermo-resistive sensitive elements isolated from microfluidic channels and 100 mm wafers silicon-glass fabrication route. It ensures MTFS compatibility with corrosive liquids, which is critically important for biological applications. MTFS design rules for the best sensitivity and measurement range are proposed. A method for automated thermo-resistive sensitive elements calibration is described. The device parameters are experimentally tested for hundreds of hours with a reference Coriolis flow sensor demonstrating a relative flow error of less than 5% within the range of 2-30 uL/min along with a sub-second time response.
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Submitted 21 December, 2022;
originally announced December 2022.
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Beyond single-crystalline metals: ultralow-loss silver films on lattice-mismatched substrates
Authors:
Aleksandr S. Baburin,
Dmitriy O. Moskalev,
Evgeniy S. Lotkov,
Olga S. Sorokina,
Dmitriy A. Baklykov,
Sergey S. Avdeev,
Kirill A. Buzaverov,
Georgiy M. Yankovskii,
Alexander V. Baryshev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a met…
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High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a metal - substrate system. Here, we demonstrate the deposition technique to e-beam evaporate ultralow-loss silver thin films on transparent lattice-mismatched substrates. The process is based on evolutionary selection growth. The key feature of our approach is a well-defined control of deposition on a cooled substrate, self-crystallization and subsequent annealing for precise stress relaxation that promote further grains growth. We are able to deposit 100-nm thick ultraflat polycrystalline silver films with micrometer-scale grains and ultralow optical losses. Finally, we show ultra-high-quality factor plasmonic silver nanostructures on transparent lattice-mismatched substrate comparable to epitaxial silver. This can be of the great interest for high performance or single-molecule optical sensorics applications.
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Submitted 27 October, 2022;
originally announced December 2022.
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Deep multilevel wet etching of fused silica glass microstructures in BOE solution
Authors:
T. G. Konstantinova,
M. M. Andronic,
D. A. Baklykov,
V. E. Stukalova,
D. A. Ezenkova,
E. V. Zikiy,
M. V. Bashinova,
A. A. Solovev,
E. S. Lotkov,
I. A. Ryzhikov,
I. A. Rodionov
Abstract:
Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its ultimate chemical resistance, optical, electrical, and mechanical performance. Wet etching in hydrofluoric solutions especially a buffered oxide etching (BOE) solution is still the key method for fabricating fused silica glass-based microdevices. It is well known that protective mask integr…
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Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its ultimate chemical resistance, optical, electrical, and mechanical performance. Wet etching in hydrofluoric solutions especially a buffered oxide etching (BOE) solution is still the key method for fabricating fused silica glass-based microdevices. It is well known that protective mask integrity during deep fused silica wet etching is a big challenge due to chemical stability of fused glass and extremely aggressive BOE properties. Here, we propose a multilevel fused silica glass microstructures fabrication route based on deep wet etching through a stepped mask with just a one grayscale photolithography step. First, we provide a deep comprehensive analysis of a fused quartz dissolution mechanism in BOE solution and calculate the main fluoride fractions like $HF^-_2$, $F^-$, $(HF)_2$ components in a BOE solution as a function of pH and $NH_4F:HF$ ratio at room temperature. Then, we experimentally investigate the influence of BOE concentration ($NH_4F:HF$ from 1:1 to 14:1) on the mask resistance, etch rate and profile isotropy during fused silica 60 minutes etching through a metal/photoresist mask. Finally, we demonstrate a high-quality multilevel over-200 um isotropic wet etching process with the rate up to 3 um/min, which could be of a great interest for advanced fused silica microdevices with flexure suspensions, inertial masses, microchannels, and through-wafer holes.
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Submitted 13 December, 2022;
originally announced December 2022.
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Low-loss silicon nitride photonic ICs for single-photon applications
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Mihail Andronik,
Victoria E. Stukalova,
Dmitry A. Baklykov,
Ivan V. Dyakonov,
Nikolay N. Skryabin,
Mikhail Yu. Saygin,
Sergey P. Kulik,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report…
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Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.
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Submitted 28 October, 2022;
originally announced October 2022.
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Deterministic integration of single nitrogen-vacancy centers into nanopatch antennas
Authors:
Simeon I. Bogdanov,
Oksana A. Makarova,
Alexei S. Lagutchev,
Deesha Shah,
Chin-Cheng Chiang,
Soham Saha,
Alexandr S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using variou…
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Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using various self-assembly or random assembly techniques. Yet, the difficulty of controllably fabricate nanoantennas with the smallest mode sizes coupled to pre-characterized single emitters until now has remained a serious issue plaguing the development of quantum plasmonic devices. We demonstrate the transfer of nanodiamonds with single nitrogen-vacancy (NV) centers to an epitaxial silver substrate and their subsequent deterministic coupling to plasmonic gap nanoantennas. Through fine control of the assembled nanoantenna geometry, a dramatic shortening of the NV fluorescence lifetime was achieved. We furthermore show that by preselecting NV centers exhibiting a photostable spin contrast, a coherent spin dynamics can be measured in the coupled configuration. The demonstrated approach opens unique applications of plasmon-enhanced quantum emitters for integrated quantum information and sensing devices.
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Submitted 15 February, 2019;
originally announced February 2019.
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Modification of incoherent scattering under the influence of system eigenmodes
Authors:
R. S. Puzko,
A. D. Brozhek,
V. I. Fabelinsky,
D. N. Kozlov,
Y. N. Polivanov,
V. V. Smirnov,
A. N. Lagarkov,
A. K. Sarychev,
K. N. Afanasiev,
I. A. Ryzhikov,
I. A. Boginskaya,
M. V. Sedova,
I. N. Kurochkin,
A. M. Merzlikin
Abstract:
The optical properties of inhomogeneous cerium dioxide (CeO2) films on aluminum (Al) sublayer are investigated. The dependencies of the reflection, scattering, and absorption of coherent electromagnetic radiation as functions of the incidence angle and polarization are studied. The experimental and numerical studies show the existence of an incidence angle at which the scattering and absorption of…
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The optical properties of inhomogeneous cerium dioxide (CeO2) films on aluminum (Al) sublayer are investigated. The dependencies of the reflection, scattering, and absorption of coherent electromagnetic radiation as functions of the incidence angle and polarization are studied. The experimental and numerical studies show the existence of an incidence angle at which the scattering and absorption of coherent radiation with s-polarization increase simultaneously and the specular reflection becomes just about a few percents. The angle corresponds to an excitation of Fabry-Perot resonator modes. This effect opens up great prospects for manipulation (tuning) of the reflection from the inhomogeneous films.
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Submitted 21 January, 2019; v1 submitted 9 August, 2018;
originally announced August 2018.
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Quantum Engineering of Single-Crystalline Silver Thin Films
Authors:
Ilya A. Rodionov,
Aleksandr S. Baburin,
Aidar R. Gabidullin,
Sergey S. Maklakov,
Swen Peters,
Ilya A. Ryzhikov,
Alexander V. Andriyash
Abstract:
There is a demand for the manufacture of ultra low-loss metallic films with high-quality single crystals and surface for quantum optics and quantum information processing. Many researches are devoted to alternative materials, but silver is by far the most preferred low-loss material at optical and near-IR frequencies. Usually, epitaxial growth is used to deposit single-crystalline silver films, bu…
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There is a demand for the manufacture of ultra low-loss metallic films with high-quality single crystals and surface for quantum optics and quantum information processing. Many researches are devoted to alternative materials, but silver is by far the most preferred low-loss material at optical and near-IR frequencies. Usually, epitaxial growth is used to deposit single-crystalline silver films, but they still suffer from losses and well-known deweting effect. Here we report the two-step approach for e-beam evaporation of atomically smooth single-crystalline metallic films. The proposed method is self-controlled by quantum size effects and is based on the step switch of film growth kinetics between two deposition steps, which allow to overcome the film-surface dewetting. Here we have used it to deposit 35-100 nm thick single-crystalline silver films with sub-100 pm surface roughness and extremely low losses. We anticipate that the proposed approach could be readily adopted for the synthesis of other low-loss single-crystalline metallic thin films.
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Submitted 20 November, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Toward theoretically limited SPP propagation length above two hundred microns on ultra-smooth silver surface
Authors:
Aleksandr S. Baburin,
Aleksey S. Kalmykov,
Roman V. Kirtaev,
Dmitriy V. Negrov,
Dmitriy O. Moskalev,
Ilya A. Ryzhikov,
Pavel N. Melentiev,
Ilya A. Rodionov,
Victor I. Balykin
Abstract:
We demonstrate the optical medium for surface plasmon - polariton waves (SPP) propagation with ultra low losses corresponding to the theoretically limited values. The unique element of the optical medium is an atomically-flat single-crystalline silver thin film which provides extremely low losses. The SPP excited on the surface of such thin films (at 780 nm) is characterized by a SPP propagation l…
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We demonstrate the optical medium for surface plasmon - polariton waves (SPP) propagation with ultra low losses corresponding to the theoretically limited values. The unique element of the optical medium is an atomically-flat single-crystalline silver thin film which provides extremely low losses. The SPP excited on the surface of such thin films (at 780 nm) is characterized by a SPP propagation length equals to 200 um, which is twice longer than previously reported experimental results and corresponds to theoretically limited values for silver films.
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Submitted 28 August, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Ultrabright room-temperature single-photon emission from nanodiamond nitrogen-vacancy centers with sub-nanosecond excited-state lifetime
Authors:
Simeon Bogdanov,
Mikhail Y. Shalaginov,
Alexei Lagutchev,
Chin-Cheng Chiang,
Deesha Shah,
Alexander S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of partic…
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Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of particular interest for such applications. We demonstrate single-photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to nanosized gap plasmonic cavities with internal mode volumes about 10 000 times smaller than the cubic vacuum wavelength. The resulting structures features sub-nanosecond NV excited-state lifetimes and detected photon rates up to 50 million counts per second. Analysis of the fluorescence saturation allows the extraction of the multi-order excitation rate enhancement provided by the nanoantenna. Efficiency analysis shows that the NV center is producing up to 0.25 billion photons per second in the far-field.
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Submitted 1 December, 2017; v1 submitted 26 November, 2017;
originally announced November 2017.
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Photoconductivity of CdS-CdSe granular films: influence of microstructure
Authors:
A. S. Meshkov,
E. F. Ostretsov,
W. V. Pogosov,
I. A. Ryzhikov,
Yu. V. Trofimov
Abstract:
We study experimentally the photoconductivity of CdS-CdSe sintered granular films obtained by the screen printing method. We mostly focus on the dependences of photoconductivity on film's microstructure, which varies with changing heat-treatment conditions. The maximum photoconductivity is found for samples with compact packing of individual grains, which nevertheless are separated by gaps. Such a…
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We study experimentally the photoconductivity of CdS-CdSe sintered granular films obtained by the screen printing method. We mostly focus on the dependences of photoconductivity on film's microstructure, which varies with changing heat-treatment conditions. The maximum photoconductivity is found for samples with compact packing of individual grains, which nevertheless are separated by gaps. Such a microstructure is typical for films heat-treated during an intermediate (optimal) time. In order to understand whether the dominant mechanism of charge transfer is identical with the one in monocrystals, we perform temperature measurements of photoresistance. Corresponding curves have the same peculiar nonmonotonic shape as in CdSe monocrystals, from which we conclude that the basic mechanism is also the same. It is suggested that the optimal heat-treatment time appears as a result of a competition between two mechanisms: improvement of film's connectivity and its oxidation. Photoresistance is also measured in vacuum and in helium atmosphere, which suppress oxygen and water absorption/chemisorption at intergrain boundaries. We demonstrate that this suppression increases photoconductivity, especially at high temperatures.
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Submitted 23 August, 2010; v1 submitted 14 October, 2008;
originally announced October 2008.
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Sub-wavelength imaging: Resolution enhancement using metal wire gratings
Authors:
G. Fedorov,
S. I. Maslovski,
A. V. Dorofeenko,
A. P. Vinogradov,
I. A. Ryzhikov,
S. A. Tretyakov
Abstract:
An experimental evidence of subwavelength imaging with a "lens", which is a uniaxial negative permittivity wire medium slab, is reported. The slab is formed by gratings of long thin parallel conducting cylinders. Taking into account the anisotropy and spatial dispersion in the wire medium we theoretically show that there are no usual plasmons that could be exited on surfaces of such a slab, and…
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An experimental evidence of subwavelength imaging with a "lens", which is a uniaxial negative permittivity wire medium slab, is reported. The slab is formed by gratings of long thin parallel conducting cylinders. Taking into account the anisotropy and spatial dispersion in the wire medium we theoretically show that there are no usual plasmons that could be exited on surfaces of such a slab, and there is no resonant enhancement of evanescent fields in the slab. The experimentally observed clear improvement of the resolution in the presence of the slab is explained as filtering out the harmonics with small wavenumbers. In other words, the wire gratings (the wire medium) suppress strong traveling-mode components increasing the role of evanescent waves in the image formation. This effect can be used in near-field imaging and detection applications.
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Submitted 26 September, 2005;
originally announced September 2005.