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Snowmass 2021: Superconducting Sensor Fabrication Capabilities for HEP Science
Authors:
Thomas Cecil,
Clarence L. Chang,
Shannon M. Duff,
Dale Li,
Rupak Mahapatra,
Mark Platt,
Kevin K. Ryu
Abstract:
Superconducting sensors are a key enabling technology for many HEP experiments with advances in sensor capabilities leading directly to expanded science reach. The unique materials and processes required for the fabrication of these sensors makes commercial sourcing impractical in comparison with semiconducting devices. Subsequently, the development and fabrication of new sensors are often perform…
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Superconducting sensors are a key enabling technology for many HEP experiments with advances in sensor capabilities leading directly to expanded science reach. The unique materials and processes required for the fabrication of these sensors makes commercial sourcing impractical in comparison with semiconducting devices. Subsequently, the development and fabrication of new sensors are often performed at academic cleanrooms supported through HEP basic detector research and/or project funds. While this operational model has been successful to date, we are at a turning point in the history of superconducting electronics, as evidenced by the rapid growth in the field of quantum computing, when scale and sophistication of these sensors can lead to significant progress. In order to achieve this progress and meet the needs of the next generations of HEP experiments, continued support of all stages of the superconducting sensors development pipeline is necessary.
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Submitted 29 March, 2022;
originally announced March 2022.
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High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
Authors:
David Reens,
Michael Collins,
Joseph Ciampi,
Dave Kharas,
Brian F. Aull,
Kevan Donlon,
Colin D. Bruzewicz,
Bradley Felton,
Jules Stuart,
Robert J. Niffenegger,
Philip Rich,
Danielle Braje,
Kevin K. Ryu,
John Chiaverini,
Robert McConnell
Abstract:
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at ea…
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Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trap** location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trap** chips. We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $μ$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
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Submitted 3 February, 2022;
originally announced February 2022.
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Integrated GaN photonic circuits on silicon (100) for second harmonic generation
Authors:
Chi Xiong,
Wolfram Pernice,
Kevin K. Ryu,
Carsten Schuck,
King Y. Fong,
Tomas Palacios,
Hong X. Tang
Abstract:
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plu…
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We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{chi}(2) enabled sum-/difference-frequency processes.
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Submitted 20 January, 2014;
originally announced January 2014.
