Showing 1–15 of 15 results for author: Rylkov, V V

The origin of g $\approx$ 4 EPR line in magnetic nanocomposites: Manifestation of double quantum transitions in ferromagnetic granules

Authors: A. B. Drovosekov, M. Yu. Dmitrieva, A. V. Sitnikov, S. N. Nikolaev, V. V. Rylkov

Abstract: Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different compositions and atomic percentage of metal and dielectric phases (M = Fe, Co, Ni, CoFeB; D = Al$_2$O$_3$, SiO$_2$, ZrO$_2$; x $\approx$ 15-60 at.%) are investigated by electron magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). At concentrations of the metallic ferromag… ▽ More Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different compositions and atomic percentage of metal and dielectric phases (M = Fe, Co, Ni, CoFeB; D = Al$_2$O$_3$, SiO$_2$, ZrO$_2$; x $\approx$ 15-60 at.%) are investigated by electron magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). At concentrations of the metallic ferromagnetic phase below the percolation threshold, the experimental spectra, besides the conventional ferromagnetic resonance signal, demonstrate an additional absorption peak characterized by a double effective g-factor g $\approx$ 4. The appearance of such a peak in the resonance spectra and its unusual properties are explained in the framework of the quantum mechanical "giant spin" model by the excitation of "forbidden" ("double quantum") transitions in magnetic nanogranules with a change of the spin projection $Δm = \pm2$. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Specific features of g $\approx$ 4.3 EPR line behavior in magnetic nanogranular composites

Authors: A. B. Drovosekov, N. M. Kreines, D. A. Ziganurov, A. V. Sitnikov, S. N. Nikolaev, V. V. Rylkov

Abstract: Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different composition and percentage of metal and dielectric phases (M = Fe, Co, CoFeB; D = Al$_2$O$_3$, SiO$_2$, LiNbO$_3$; x $\approx$ 15-70 at.%) are investigated by magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). In addition to the usual ferromagnetic resonance signal from… ▽ More Films of metal-insulator nanogranular composites M$_x$D$_{100-x}$ with different composition and percentage of metal and dielectric phases (M = Fe, Co, CoFeB; D = Al$_2$O$_3$, SiO$_2$, LiNbO$_3$; x $\approx$ 15-70 at.%) are investigated by magnetic resonance in a wide range of frequencies (f = 7-37 GHz) and temperatures (T = 4.2-360 K). In addition to the usual ferromagnetic resonance signal from an array of nanogranules, the experimental spectra contain an additional absorption peak, which we associate with the electron paramagnetic resonance (EPR) of Fe and Co ions dispersed in the insulating space between the granules. In contrast to the traditional EPR of Fe and Co ions in weakly doped non-magnetic matrices, the observed peak demonstrates a number of unusual properties, which we explain by the presence of magnetic interactions between ions and granules. △ Less

Submitted 30 April, 2023; originally announced May 2023.

Journal ref: J. Exp. Theor. Phys. 137, 562 (2023)

Stability of quantized conductance levels in memristors with copper filaments: toward understanding the mechanisms of resistive switching

Authors: Oleg G. Kharlanov, Boris S. Shvetsov, Vladimir V. Rylkov, Anton A. Minnekhanov

Abstract: Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of resistive switching and evolution of conductive filaments in such structures still remains a major challenge. In this work, aiming at a better understanding of… ▽ More Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of resistive switching and evolution of conductive filaments in such structures still remains a major challenge. In this work, aiming at a better understanding of these phenomena, we experimentally investigate an unusual effect of enhanced conductive filament stability in memristors with copper filaments under the applied voltage and present a simplified theoretical model of the effect of a quantum current through a filament on its shape. Our semi-quantitative, continuous model predicts, indeed, that for a thin filament, the "quantum pressure" exerted on its walls by the recoil of charge carriers can well compete with the surface tension and crucially affect the evolution of the filament profile at the voltages around 1V. At lower voltages, the quantum pressure is expected to provide extra stability to the filaments supporting quantized conductance, which we also reveal experimentally using a novel methodology focusing on retention statistics. Our results indicate that the recoil effects could potentially be important for resistive switching in memristive devices with metallic filaments and that taking them into account in rational design of memristors could help achieve their better retention and plasticity characteristics. △ Less

Submitted 20 April, 2022; v1 submitted 26 November, 2021; originally announced November 2021.

Comments: version accepted for publication in Phys. Rev. Applied, including improved statistics

Journal ref: Phys. Rev. Applied 17, 054035 (2022)

Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (CoFeB)x(LiNbO3)100-x nanocomposite

Authors: M. N. Martyshov, A. V. Emelyanov, V. A. Demin, K. E. Nikiruy, A. A. Minnekhanov, S. N. Nikolaev, A. N. Taldenkov, A. V. Ovcharov, M. Yu. Presnyakov, A. V. Sitnikov, A. L. Vasiliev, P. A. Forsh, A. B. Granovskiy, P. K. Kashkarov, M. V. Kovalchuk, V. V. Rylkov

Abstract: Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogr… ▽ More Resistive and capacitive switching in capacitor metal/nanocomposite/metal (M/NC/M) structures based on (CoFeB)x(LiNbO3)100-x NC fabricated by ion-beam sputtering with metal content x $\approx$ 8-20 at. % is studied. The peculiarity of the structure synthesis was the use of increased oxygen content ($\approx$ 2*10^-5 Torr) at the initial stage of the NC growth. The NC films, along with metal nanogranules of 3-6 nm in size, contained a large number of dispersed Co (Fe) atoms (up to ~10^22 cm^-3). Measurements were performed both in DC and AC (frequency range 5-13 MHz) regimes. When switching structures from high-resistance (Roff) to low-resistance (Ron) state, the effect of a strong increase in their capacity was found, which reaches 8 times at x $\approx$ 15 at. % and the resistance ratio Roff/Ron $\approx$ 40. The effect is explained by the synergetic combination of the multifilamentary character of resistive switching (RS) and structural features of the samples associated, in particular, with the formation of high-resistance and strongly polarizable LiNbO3 layer near the bottom electrode of the structures. The proposed model is confirmed by investigations of RS of two-layer nanoscale M/NC/LiNbO3/M structures as well as by studies of the magnetization of M/NC/M structures in the pristine state and after RS. △ Less

Submitted 17 August, 2020; v1 submitted 8 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Applied 14, 034016 (2020)

Mechanisms of FMR line broadening in CoFeB-LiNbO$_3$ granular films in the vicinity of metal-insulator transition

Authors: A. B. Drovosekov, N. M. Kreines, A. S. Barkalova, S. N. Nikolaev, V. V. Rylkov, A. V. Sitnikov

Abstract: Metal-insulator (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$ nanocomposite films with different content of the ferromagnetic (FM) phase $x$ are investigated by ferromagnetic resonance (FMR) technique. A strong change of the FMR line shape is observed in the vicinity of metal-insulator transition (MIT) of the film, where the hop**-type conductivity $σ$ modifies to the regime of a strong intergranular tunnell… ▽ More Metal-insulator (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$ nanocomposite films with different content of the ferromagnetic (FM) phase $x$ are investigated by ferromagnetic resonance (FMR) technique. A strong change of the FMR line shape is observed in the vicinity of metal-insulator transition (MIT) of the film, where the hop**-type conductivity $σ$ modifies to the regime of a strong intergranular tunnelling, characterized by a logarithmic dependence $σ(T)$ at high temperatures. It is shown that below MIT, the FMR linewidth is mainly determined by the inhomogeneous distribution of the local anisotropy axes in the film plane. Above MIT, the contribution of this inhomogeneity to the line broadening decreases. At the same time, two-magnon magnetic relaxation processes begin to play a significant role in the formation of the linewidth. The observed behaviour indicates the critical role of interparticle exchange in the tunnelling regime above MIT of the nanocomposite. △ Less

Submitted 19 August, 2019; v1 submitted 14 June, 2019; originally announced June 2019.

Journal ref: J. Magn. Magn. Mater. 495, 165875 (2020)

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications

Authors: Anton A. Minnekhanov, Andrey V. Emelyanov, Dmitry A. Lapkin, Kristina E. Nikiruy, Boris S. Shvetsov, Alexander A. Nesmelov, Vladimir V. Rylkov, Vyacheslav A. Demin, Victor V. Erokhin

Abstract: In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of about 500 nm thickness). Th… ▽ More In this paper, the resistive switching and neuromorphic behavior of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of about 500 nm thickness). These organic memristive devices exhibit excellent performance: low switching voltage (down to 1 V), large OFF/ON resistance ratio (about 10^3), retention (> 10^4 s) and high multilevel resistance switching (at least 16 stable resistive states in the case of Cu electrodes). We have experimentally shown that parylene-based memristive elements can be trained by a biologically inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained results have been used to implement a simple neuromorphic network model of classical conditioning. The described advantages allow considering parylene-based organic memristors as prospective devices for hardware realization of spiking artificial neuron networks capable of supervised and unsupervised learning and suitable for biomedical applications. △ Less

Submitted 19 March, 2019; v1 submitted 24 January, 2019; originally announced January 2019.

Comments: 25 pages, 6 figures, 1 table

Journal ref: Scientific Reports 9, 10800 (2019)

Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition

Authors: V. V. Rylkov, S. N. Nikolaev, K. Yu. Chernoglazov, V. A. Demin, A. V. Sitnikov, M. Yu. Presnyakov, A. L. Vasiliev, N. S. Perov, A. S. Vedeneev, Yu. E. Kalinin, V. V. Tugushev, A. B. Granovsky

Abstract: We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix.… ▽ More We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and longitudinal resistivity strongly differ, if temperature T or metal content x are variable parameters: Rh(T)~R(T)^0.4-0.5 obtained from the temperature variation of R and Rh at fixed x, while Rh(x)/x~R(x)^0.24, obtained from measurements at the fixed low temperature region (10-40 K) for samples with different x. We qualitatively describe our experimental data in the frame of phenomenological model of two sources of AHE e.m.f. arising from metallic nanogranules and insulating tunneling regions, respectively, at that the tunneling AHE (TAHE) source is strongly shunted due to generation of local circular Hall currents. We consider our experimental results as the first experimental proof of the TAHE manifestation. △ Less

Submitted 16 November, 2016; originally announced November 2016.

Comments: 27 pages, 12 figures

Journal ref: Phys. Rev. B 95, 144202 (2017)

Magnetic anisotropy of polycrystalline high-temperature ferromagnetic Mn$_x$Si$_{1-x}$ ($x\approx0.5$) alloy films

Authors: A. B. Drovosekov, N. M. Kreines, A. O. Savitsky, S. V. Kapelnitsky, V. V. Rylkov, V. V. Tugushev, G. V. Prutskov, O. A. Novodvorskii, A. V. Shorokhova, Y. Wang, S. Zhou

Abstract: A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 - 300 K using ferromagnetic resonance (FMR) measurements in the wide range of frequencies (f = 7 - 60 GHz) and magnetic fields (H = 0 - 30 kOe). For samples with x… ▽ More A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 - 300 K using ferromagnetic resonance (FMR) measurements in the wide range of frequencies (f = 7 - 60 GHz) and magnetic fields (H = 0 - 30 kOe). For samples with x = 0.52 - 0.55, FMR data show clear evidence of ferromagnetism with high Curie temperatures T$_\text{C}$ ~ 300 K. These samples demonstrate complex and unusual character of magnetic anisotropy described in the frame of phenomenological model as a combination of the essential second order easy plane anisotropy contribution and the additional forth order uniaxial anisotropy contribution with easy direction normal to the film plane. We explain the obtained results by a polycrystalline (mosaic) structure of the films caused by the film-substrate lattice mismatch. The existence of extra strains at the crystallite boundaries leads to an essential inhomogeneous magnetic anisotropy in the film plane. △ Less

Submitted 9 October, 2015; originally announced October 2015.

Journal ref: J. Magn. Magn. Mater. 429, 305 (2017)

Grain-size dependent high-temperature ferromagnetism of polycrystalline MnxSi1-x (x~0.5) films

Authors: S. N. Nikolaev, A. S. Semisalova, V. V. Rylkov, V. V. Tugushev, A. V. Zenkevich, A. L. Vasiliev, E. M. Pashaev, K. Yu. Chernoglazov, Yu. M. Chesnokov, I. A. Likhachev, N. S. Perov, Yu. A. Matveyev, O. A. Novodvorskii, E. T. Kulatov, A. S. Bugaev, Y. Wang, S. Zhou

Abstract: We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth.… ▽ More We present the results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x=0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C. A highlight of our PLD method is the using of non-conventional (shadow) geometry with Kr as a scattering gas during the sample growth. It is found that studied films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ~ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the layered polycrystalline structure with a self-organizing grain size distribution. The HT FM order is originated from the bottom interfacial nanocrystalline layer, while the upper layer possesses the low temperature (LT) type of FM order with TC = 46 K, gives essential contribution to the magnetization below 50 K and is homogeneous on the nanometer size scale. Under these conditions, AHE changes its sign from positive to negative at T < 30 K. We attribute observed properties to the synergy of self-organizing distribution of MnxSi1-x crystallites in size and peculiarities of defect-induced FM order in PLD grown polycrystalline MnxSi1-x (x~0.5) films. △ Less

Submitted 8 October, 2015; originally announced October 2015.

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Authors: M. A. Pankov, B. A. Aronzon, V. V. Rylkov, A. B. Davydov, V. V. Tugushev, S. Caprara, I. A. Likhachev, E. M. Pashaev, M. A. Chuev, E. Lähderanta, A. S. Vedeneev, A. S. Bugaev

Abstract: Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonst… ▽ More Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component. △ Less

Submitted 9 February, 2012; originally announced February 2012.

Comments: 19 pages, 6 figures

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

Authors: Vikram Tripathi, Kusum Dhochak, B. A. Aronzon, V. V. Rylkov, A. B. Davydov, Bertrand Raquet, Michel Goiran, K. I. Kugel

Abstract: We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed i… ▽ More We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study. △ Less

Submitted 25 December, 2010; originally announced December 2010.

Comments: 13 pages, 12 figures, RevTeX

Room temperature ferromagnetism and anomalous Hall effect in Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) alloys

Authors: B. A. Aronzon, V. V. Rylkov, S. N. Nikolaev, V. V. Tugushev, S. Caprara, V. V. Podolskii, V. P. Lesnikov, A. Lashkul, R. Laiho, R. R. Gareev, N. S. Perov, A. S. Semisalova

Abstract: A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the… ▽ More A detailed study of the magnetic and transport properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si$_{1-x}$Mn$_x$ ($x\approx 0.35$) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations (paramagnons) in the matrix. Theoretical predictions and experimental data are in good qualitative agreement. △ Less

Submitted 6 December, 2010; originally announced December 2010.

Comments: 31 pages, 7 figures

Room temperature ferromagnetism and anomalous Hall effect in Si_{1-x}Mn_x (x = 0.35) alloys

Authors: B. A. Aronzon, V. V. Rylkov, S. N. Nikolaev, V. V. Tugushev, S. Caprara, V. V. Podolskii, V. P. Lesnikov, A. Lashkul, R. Laiho, R. R. Gareev, N. S. Perov, A. S. Semisalova

Abstract: A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic prope… ▽ More A detailed study of the magnetic and transport properties of Si1-xMnx (X = 0.35) films is presented. We observe the anomalous Hall effect (AHE) in these films up to room temperature. The results of the magnetic measurements and the AHE data are consistent and demonstrate the existence of long-range ferromagnetic (FM) order in the systems under study. A correlation of the AHE and the magnetic properties of Si1-xMnx (X = 0.35) films with their conductivity and substrate type is shown. A theoretical model based on the idea of a two-phase magnetic material, in which molecular clusters with localized magnetic moments are embedded in the matrix of a weak itinerant ferromagnet, is discussed. The long-range ferromagnetic order at high temperatures is mainly due to the Stoner enhancement of the exchange coupling between clusters through thermal spin fluctuations ("paramagnons") in the matrix. Theoretical predictions and experimental data are in good qualitative agreement. △ Less

Submitted 3 December, 2010; originally announced December 2010.

Comments: 24 pages with 7 figures

Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells

Authors: B. A. Aronzon, M. V. Kovalchuk, E. M. Pashaev, M. A. Chuev, V. V. Kvardakov, I. A. Subbotin, V. V. Rylkov, M. A. Pankov, A. S. Lagutin, B. N. Zvonkov, Yu. A. Danilov, O. V. Vihrova, A. V. Lashkul, R. Laiho

Abstract: We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical… ▽ More We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems. △ Less

Submitted 31 July, 2007; originally announced August 2007.

Comments: 15 pages, 9 figures

Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields

Authors: V. V. Rylkov, A. S. Lagutin, B. A. Aronzon, V. V. Podolskii, V. P. Lesnikov, M. Goiran, J. Galibert, B. Raquet, J. Leotin

Abstract: Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appear… ▽ More Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K only, whereas the saturation fields of the anomalous Hall effect resistance are much less (around 2 T at 30K). The total reduction of resistance exceeds 10 times in magnetic fields around of 10T. The obtained results are interpreted on the base of the assumptions of the non-uniform distribution of Mn atoms acting as acceptors, the local ferromagnetic transition and the percolation-like character of the film conductivity, which prevailed under conditions of the strong fluctuations of the exchange interaction. Characteristic scales of the magneto-electric nonuniformity are estimated using analysis of the mesoscopic fluctuations of the non-diagonal components of the magnetoresistivity tensor. △ Less

Submitted 27 December, 2006; originally announced December 2006.

Comments: 12 pages, 5 figures