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Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$
Authors:
A. M. Shikin,
N. L. Zaitsev,
T. P. Estyunina,
D. A. Estyunin,
A. G. Rybkin,
D. A. Glazkova,
I. I. Klimovskikh,
A. V. Eryzhenkov,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
T. Iwata,
T. Kosa,
K. Kuroda,
K. Shimada,
A. V. Tarasov
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradua…
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Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).
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Submitted 21 June, 2024;
originally announced June 2024.
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Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
T. P. Makarova,
A. V. Eryzhenkov,
D. Yu. Usachov,
D. A. Estyunin,
D. A. Glazkova,
I. I. Klimovskikh,
A. G. Rybkin,
A. V. Tarasov
Abstract:
The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals…
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The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals (SvdW) distance between the first and second septuple layers (SLs), (ii) the magnetic moment on Mn atoms, (iii) the spin-orbit coupling (SOC) strength for the surface Te and Bi atoms and related changes in the localization of the topological surface states (TSSs). It was shown that all these factors may change the gap width at the DP in a wide range from 5 to $\sim$90~meV. We show that the Dirac gap variation is mainly determined by the corresponding changes in the TSSs spatial distribution. The best agreement between the presented experimental data (with the Dirac gaps between $\sim$15 and 55~meV) and the calculations takes place for a slightly compressed SvdW interval (of about -3.5~\% compared to the bulk value) with modified SOC for surface atoms (that can occur in the presence of various defects in the near-surface region). We show that upon changing the values of the SvdW interval and surface SOC strength the TSSs spatial distribution shifts between the SLs with opposite magnetizations, which leads to a non-monotonic change in the Dirac gap size.
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Submitted 1 June, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Sample-dependent Dirac point gap in MnBi$_2$Te$_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
Authors:
A. M. Shikin,
D. A. Estyunin,
N. L. Zaitsev,
D. Glazkova,
I. I. Klimovskikh,
S. Filnov,
A. G. Rybkin,
E. F. Schwier,
S. Kumar,
A. Kimura,
N. Mamedov,
Z. Aliev,
M. B. Babanly,
K. Kokh,
O. E. Tereshchenko,
M. M. Otrokov,
E. V. Chulkov,
K. A. Zvezdin,
A. K. Zvezdin
Abstract:
Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimen…
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Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi$_2$Te$_4$ Dirac cone. Here, using micro($μ$)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi$_2$Te$_4$ samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi$_2$Te$_4$ samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Further, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi$_2$Te$_4$ DP gap size.
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Submitted 9 July, 2021;
originally announced July 2021.
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Electronic Band Structure and Superconducting Properties of SnAs
Authors:
P. I. Bezotosnyi,
K. A. Dmitrieva,
A. V. Sadakov,
K. S. Pervakov,
A. V. Muratov,
A. S. Usoltsev,
A. Yu. Tsvetkov,
S. Yu. Gavrilkin,
N. S. Pavlov,
A. A. Slobodchikov,
O. Yu. Vilkov,
A. G. Rybkin,
I. A. Nekrasov,
V. M. Pudalov
Abstract:
We report comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy range and density functional theory (DFT) within generalized gradient approximation (GGA). The DFT/GGA calculations were done including spin-orbit coupling for bo…
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We report comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy range and density functional theory (DFT) within generalized gradient approximation (GGA). The DFT/GGA calculations were done including spin-orbit coupling for both bulk and (111) slab crystal structures. Comparison of the DFT/GGA band dispersions with ARPES data shows that (111) slab much better describes ARPES data than just bulk bands. Superconducting properties of SnAs were studied experimentally by specific heat, magnetic susceptibility, magnetotransport measurements and Andreev reflection spectroscopy. Temperature dependences of the superconducting gap and of the specific heat were found to be well consistent with those expected for the single band BCS superconductors with an isotropic s-wave order parameter. Despite spin-orbit coupling is present in SnAs, our data shows no signatures of a potential unconventional superconductivity, and the characteristic BCS ratio $2Δ/T_c = 3.48 - 3.73$ is very close to the BCS value in the weak coupling limit.
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Submitted 16 October, 2019;
originally announced October 2019.
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Synchrotron radiation induced magnetization in magnetically-doped and pristine topological insulators
Authors:
A. M. Shikin,
D. M. Sostina,
A. A. Rybkina,
V. Yu. Voroshnin,
I. I. Klimovskikh,
A. G. Rybkin,
D. A. Estyunin,
K. A. Kokh,
O. E. Tereshchenko,
L. Petaccia,
G. Di Santo,
P. N. Skirdkov,
K. A. Zvezdin,
A. K. Zvezdin,
A. Kimura,
E. V. Chulkov,
E. E. Krasovskii
Abstract:
Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized…
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Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized synchrotron radiation (SR) is followed by the hole-generated uncompensated spin accumulation and the SR-induced magnetization via the spin-torque effect. We show that the photoexcitation of the DC is asymmetric, that it varies with the photon energy, and that it practically does not change during the relaxation. We find a relation between the photoexcitation asymmetry, the generated spin accumulation and the induced spin polarization of the DC and V 3d states. Experimentally the SR-generated in-plane and out-of-plane magnetization is confirmed by the $k_{\parallel}$-shift of the DC position and by the splitting of the states at the Dirac point even above the Curie temperature. Theoretical predictions and estimations of the measurable physical quantities substantiate the experimental results.
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Submitted 27 July, 2017;
originally announced July 2017.
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Spin structure of Graphene/Pt interface for spin current formation and induced magnetization in deposited (Ni-Fe)-nanodots
Authors:
A. M. Shikin,
A. A. Rybkina,
A. G. Rybkin,
I. I. Klimovskikh,
P. N. Skirdkov,
K. A. Zvezdin,
A. K. Zvezdin
Abstract:
Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated Dirac-cone spin states at the K-point of the BZ crossed with spin-polarized Pt 5d-states at Fermi level that opens up a possibility for creation of new spintro…
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Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated Dirac-cone spin states at the K-point of the BZ crossed with spin-polarized Pt 5d-states at Fermi level that opens up a possibility for creation of new spintronics devices. We propose to use this spin structure for formation of spin current with spin locked perpendicular to the momentum for induced remagnetization of the (Ni-Fe)-nanodots arranged atop the interface. Theoretical estimations of the spin current created at the Graphene/Pt interface and the induced intrinsic effective magnetic field leading to the in-plane remagnetization of the NiFe-nanodots due to spin-orbit torque effect are presented. By micromagnetic modeling based on experimentally observed spin-orbit splitting we demonstarte that the induced intrinsic magnetic field might be effectively used for magnetization swithching of the deposited (Ni-Fe)-nanodots.
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Submitted 25 December, 2013;
originally announced December 2013.
