Showing 1–11 of 11 results for author: Rugeramigabo, E P

Polarized sub-meV Photoluminescence in 2D PbS Nanoplatelets at Cryogenic Temperatures

Authors: Pengji Li, Leon Biesterfeld, Lars Klepzig, **gzhong Yang, Huu Thoai Ngo, Ahmed Addad, Tom N. Rakow, Ruolin Guan, Eddy P. Rugeramigabo, Louis Biadala, Jannika Lauth, Michael Zopf

Abstract: Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiti… ▽ More Colloidal semiconductor nanocrystals are promising materials for classical and quantum light sources due to their versatile chemistry and efficient photoluminescence (PL) properties. While visible emitters are well-established, the pursuit of excellent (near-)infrared sources continues. One notable candidate in this regard are photoluminescent two-dimensional (2D) PbS nanoplatelets (NPLs) exhibiting excitonic emission at 720 nm (1.7 eV) directly tying to the typical emission range limit of CdSe NPLs. Here, we present the first comprehensive analysis of low-temperature PL from this material class. Ultrathin 2D PbS NPLs exhibit high crystallinity confirmed by scanning transmission electron microscopy, and revealing Moire patterns in overlap** structures. At 4K, we observe unique PL features in single PbS NPLs, including narrow zero-phonon lines with line widths down to 0.6 meV and a linear degree of polarization up to 90%. Time-resolved measurements identify trions as the dominant emission source with a 2.3 ns decay time. Sub-meV spectral diffusion and no immanent blinking over minutes is observed, as well as discrete spectral jumps without memory effects. These findings advance the understanding and underpin the potential of colloidal PbS NPLs for optical and quantum technologies. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Real-time detection and control of correlated charge tunneling in a quantum dot

Authors: Johannes C. Bayer, Fredrik Brange, Adrian Schmidt, Timo Wagner, Eddy P. Rugeramigabo, Christian Flindt, Rolf J. Haug

Abstract: The tunneling of interacting charges in nanostructures is a random and noisy process, which gives rise to a variety of intriguing physical phenomena, including Coulomb blockade, the Kondo effect, and Fermi-edge singularities. Such correlation effects are visible in low-frequency measurements of the electric current or the shot noise, however, they are also expected to leave clear fingerprints in t… ▽ More The tunneling of interacting charges in nanostructures is a random and noisy process, which gives rise to a variety of intriguing physical phenomena, including Coulomb blockade, the Kondo effect, and Fermi-edge singularities. Such correlation effects are visible in low-frequency measurements of the electric current or the shot noise, however, they are also expected to leave clear fingerprints in the tunneling times of individual charges. Here, we experimentally demonstrate the real-time detection and control of correlated charge tunneling in a dynamically driven quantum dot. To this end, we measure the joint distribution of waiting times between tunneling charges, and we show that subsequent waiting times are strongly correlated due to the Coulomb interactions between the tunneling charges and the external periodic drive. Our measurements are in excellent agreement with a theoretical model that allows us to develop a detailed understanding of the correlated tunneling events. We also demonstrate that the degree of correlations can be controlled by the external drive. Our experiment paves the way for systematic real-time investigations of correlated electron transport in low-dimensional nanostructures with potential applications in metrology and sensing. △ Less

Submitted 26 May, 2024; originally announced May 2024.

Comments: 7 pages, 5 figures

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Authors: Yiteng Zhang, Lukas Gruenewald, Xin Cao, Doaa Abdelbarey, Xian Zheng, Eddy P. Rugeramigabo, Johan Verbeeck, Michael Zopf, Fei Ding

Abstract: Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on… ▽ More Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties. △ Less

Submitted 25 May, 2024; originally announced May 2024.

Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

Authors: Chenxi Ma, **gzhong Yang, Pengji Li, Eddy P. Rugeramigabo, Michael Zopf, Fei Ding

Abstract: Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes t… ▽ More Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs. △ Less

Submitted 12 January, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: 12 pages, 5 figures

Journal ref: Opt. Express 32, 14789-14800 (2024)

High-rate intercity quantum key distribution with a semiconductor single-photon source

Authors: **gzhong Yang, Zenghui Jiang, Frederik Benthin, Joscha Hanel, Tom Fandrich, Raphael Joos, Stephanie Bauer, Sascha Kolatschek, Ali Hreibi, Eddy Patrick Rugeramigabo, Michael Jetter, Simone Luca Portalupi, Michael Zopf, Peter Michler, Stefan Kück, Fei Ding

Abstract: Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of sin… ▽ More Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 * 10^{-5} with an average quantum bit error ratio of ~ 0.65 % are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications. △ Less

Submitted 2 July, 2024; v1 submitted 30 August, 2023; originally announced August 2023.

Comments: 10 pages, 4 figures

Journal ref: Light Sci Appl 13, 150 (2024)

A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K

Authors: Xin Cao, **gzhong Yang, Tom Fandrich, Yiteng Zhang, Eddy P. Rugeramigabo, Benedikt Brechtken, Rolf J. Haug, Michael Zopf, Fei Ding

Abstract: Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanopho… ▽ More Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications. △ Less

Submitted 27 April, 2023; originally announced April 2023.

Surface quantum dots with pure, coherent, and blinking-free single photon emission

Authors: Xin Cao, **gzhong Yang, Pengji Li, Tom Fandrich, Eddy P. Rugeramigabo, Vlastimil Křápek, Chenxi Ma, Frederik Benthin, Robert Keil, Benedikt Brechtken, Rolf J. Haug, Michael Oestreich, Yiteng Zhang, Constantin Schmidt, Zhao An, Michael Zopf, Fei Ding

Abstract: The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performan… ▽ More The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $μ$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing. △ Less

Submitted 12 May, 2023; v1 submitted 27 July, 2022; originally announced July 2022.

Comments: New experiments show that the results have to be re-interpreted, most likely leading to a new manuscript

Statistical limits for quantum networks with semiconductor entangled photon sources

Authors: **gzhong Yang, Michael Zopf, Pengji Li, Nand Lal Sharma, Weijie Nie, Frederik Benthin, Tom Fandrich, Eddy Patrick Rugeramigabo, Caspar Hopfmann, Robert Keil, Oliver G. Schmidt, Fei Ding

Abstract: Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexcito… ▽ More Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swap** based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality. △ Less

Submitted 10 June, 2022; v1 submitted 14 September, 2021; originally announced September 2021.

Comments: 9 pages, 4 figures

Journal ref: Physical Review B 105, 235305

Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition

Authors: J. G. Lonnemann, E. P. Rugeramigabo, M. Oestreich, J. Hübner

Abstract: We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hop** induced loss of spin coherence and hy… ▽ More We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hop** induced loss of spin coherence and hyperfine interaction yields a maximum spin lifetime exceeding 800~ns. At slightly higher do** concentrations, however, the spin relaxation deviates from the expected Dyakonov-Perel mechanism which is consistently explained by a reduction of the effective motional narrowing with increasing do** concentration. The reduction is attributed to the change of the dominant momentum scattering mechanism in the metallic impurity band where scattering by local conductivity domain boundaries due to the intrinsic random distribution of donors becomes significant. Here, we fully identify and model all intricate contributions of the relevant microscopic scattering mechanisms which allows the complete quantitative modeling of the electron spin relaxation in the entire regime from weakly interacting up to fully delocalized electrons. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Strong suppression of shot noise in a feedback-controlled single-electron transistor

Authors: T. Wagner, P. Strasberg, J. C. Bayer, E. P. Rugeramigabo, T. Brandes, R. J. Haug

Abstract: Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but recently progress has been made in the control of solid-state qubits as well. In quantum transport only a few active an… ▽ More Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but recently progress has been made in the control of solid-state qubits as well. In quantum transport only a few active and passive feedback experiments have been realized on the level of single-electrons, though theoretical proposals exist. Here we demonstrate the suppression of shot noise in a single-electron transistor, using an exclusively electronic closed-loop feedback to monitor and adjust the counting statistics. With increasing feedback response we observe a stronger suppression and faster freezing of charge current fluctuations. Our technique is analog to the generation of squeezed light with in-loop photodetection as used in quantum optics. Sub-Poisson single-electron sources will pave the way for high precision measurements in quantum transport similar to its optical or opto-mechanical equivalent. △ Less

Submitted 13 November, 2017; v1 submitted 17 February, 2016; originally announced February 2016.

Journal ref: Nature Nanotech. 12, 218-222 (2017)

Low-temperature transport properties of a two-dimensional electron gas with additional impurities

Authors: E. P. Rugeramigabo, L. Bockhorn, R. J. Haug

Abstract: We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high quality GaAs/AlGaAs heterostructures. Several materials were grown this way with different densities of Si atoms. At low temperature the mobility decreases monot… ▽ More We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high quality GaAs/AlGaAs heterostructures. Several materials were grown this way with different densities of Si atoms. At low temperature the mobility decreases monotonically with increasing impurity density. In materials with incorporated impurities, effects are observed with increasing temperatures. On the one hand, a minimum in mobility appears, marking a transition between scattering enhancement due to acoustic phonon and mobility enhancement due to impurity driven conductivity. The temperature at which the transition takes place decreases with increasing impurity density. On the other hand, the incorporated impurities induce a non-monotonic temperature dependence of the electron density. The magnitude of this variation rises with increasing impurity density. The theory of electron-electron interaction correction to the conductivity alone fails to explain our results. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 6 pages, 5 figures