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Accuracy and limitations of the bond polarizability model in modeling of Raman scattering from molecular dynamics simulations
Authors:
Atanu Paul,
Maya Rubenstein,
Anthony Ruffino,
Stefan Masiuk,
Jonathan Spanier,
Ilya Grinberg
Abstract:
Calculation of Raman scattering from molecular dynamics (MD) simulations requires accurate modeling of the evolution of the electronic polarizability of the system along its MD trajectory. For large systems, this necessitates the use of atomistic models to represent the dependence of electronic polarizability on atomic coordinates. The bond polarizability model (BPM) is the simplest such model and…
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Calculation of Raman scattering from molecular dynamics (MD) simulations requires accurate modeling of the evolution of the electronic polarizability of the system along its MD trajectory. For large systems, this necessitates the use of atomistic models to represent the dependence of electronic polarizability on atomic coordinates. The bond polarizability model (BPM) is the simplest such model and has been used for modeling the Raman spectra of molecular systems but has not been applied to solid-state systems. Here, we systematically investigate the accuracy and limitations of the BPM parameterized from density functional theory (DFT) results for a series of simple molecules such as CO2, SO2, H2S, H2O, NH3, and CH4, the more complex CH2O, CH3OH and CH3CH2OH and thiophene molecules and the BaTiO3 and CsPbBr3 perovskite solids. We find that BPM can reliably reproduce the overall features of the Raman spectra such as shifts of peak positions. However, with the exception of highly symmetric systems, the assumption of non-interacting bonds limits the quantitative accuracy of the BPM; this assumption also leads to qualitatively inaccurate polarizability evolution and Raman spectra for systems where large deviations from the ground state structure are present.
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Submitted 11 June, 2024;
originally announced June 2024.
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Adding stubs to quantum string field theories
Authors:
Carlo Maccaferri,
Riccardo Poletti,
Alberto Ruffino,
Beniamino Valsesia
Abstract:
Generalizing recent work by Schnabl-Stettinger and Erbin-Firat, we outline a universal algebraic procedure for `adding stubs' to string field theories obeying the BV quantum master equation. We apply our results to classical and quantum closed string field theory as well as to open-closed string field theory. We also clarify several aspects of the integration-out process in the co-algebraic formul…
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Generalizing recent work by Schnabl-Stettinger and Erbin-Firat, we outline a universal algebraic procedure for `adding stubs' to string field theories obeying the BV quantum master equation. We apply our results to classical and quantum closed string field theory as well as to open-closed string field theory. We also clarify several aspects of the integration-out process in the co-algebraic formulation of string field theory at the quantum level.
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Submitted 15 March, 2024;
originally announced March 2024.
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Open-Closed String Field Theory in the Large $N$ Limit
Authors:
Carlo Maccaferri,
Alberto Ruffino,
Jakub Vošmera
Abstract:
We use the new nilpotent formulation of open-closed string field theory to explore the limit where the number $N$ of identical D-branes of the starting background is large. By reformulating the theory in terms of the 't Hooft coupling $λ=κN$, where $κ$ is the string coupling constant, we explicitly see that at large $N$ only genus zero vertices with arbitrary number of boundaries survive. After di…
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We use the new nilpotent formulation of open-closed string field theory to explore the limit where the number $N$ of identical D-branes of the starting background is large. By reformulating the theory in terms of the 't Hooft coupling $λ=κN$, where $κ$ is the string coupling constant, we explicitly see that at large $N$ only genus zero vertices with arbitrary number of boundaries survive. After discussing the homotopy structure of the obtained large $N$ open-closed theory we discuss the possibility of integrating out the open string sector with a quantum but planar homotopy transfer. As a result we end up with a classical closed string field theory described by a weak $L_\infty$-algebra, containing a tree-level tadpole which, to first order in $λ$, is given by the initial boundary state. We discuss the possibility of removing the tadpole with a closed string vacuum shift solution, to end up with a new classical closed string background, where the initial D-branes have been turned into pure closed-string backreaction.
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Submitted 13 September, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
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The Nilpotent Structure of Open-Closed String Field Theory
Authors:
Carlo Maccaferri,
Alberto Ruffino,
Jakub Vošmera
Abstract:
In this note we revisit the homotopy-algebraic structure of oriented bosonic open-closed string field theory and we give a new compact formulation in terms of a single cyclic open-closed coderivation which defines a single nilpotent structure describing the consistency of generic open-closed color-ordered off-shell amplitudes with arbitrary number of boundaries and at arbitrary genus.
In this note we revisit the homotopy-algebraic structure of oriented bosonic open-closed string field theory and we give a new compact formulation in terms of a single cyclic open-closed coderivation which defines a single nilpotent structure describing the consistency of generic open-closed color-ordered off-shell amplitudes with arbitrary number of boundaries and at arbitrary genus.
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Submitted 13 August, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
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An atomistic model of electronic polarizability for calculation of Raman scattering from large-scale MD simulations
Authors:
Atanu Paul,
Anthony Ruffino,
Stefan Masiuk,
Jonathan Spanier,
Ilya Grinberg
Abstract:
The application of molecular dynamics (MD) simulations to the interpretation of Raman scattering spectra is hindered by inability of atomistic simulations to account for the dynamic evolution of electronic polarizability, requiring the use of either ab initio method or parameterization of machine learning models. More broadly, the dynamic evolution of electronic-structure-derived properties cannot…
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The application of molecular dynamics (MD) simulations to the interpretation of Raman scattering spectra is hindered by inability of atomistic simulations to account for the dynamic evolution of electronic polarizability, requiring the use of either ab initio method or parameterization of machine learning models. More broadly, the dynamic evolution of electronic-structure-derived properties cannot be treated by the current atomistic models. Here, we report a simple, physically-based atomistic model with few (maximum 10 parameters for the systems considered here) adjustable parameters that can accurately represent the changes in the electronic polarizability tensor for molecules and solid-state systems. Due to its compactness, the model can be applied for simulations of Raman spectra of large (~ 1,000,000-atom) systems with modest computational cost. To demonstrate its accuracy, the model is applied to the CO2 molecule, water clusters, and BaTiO3 and CsPbBr3 perovskites and shows good agreement with ab-initio-derived and experimental polarizability tensor and Raman data. The atomistic nature of the model enables local analysis of the contributions to Raman spectra, paving the way for the application of MD simulations for the interpretation of Raman spectroscopy results. Furthermore, our successful atomistic representation of the evolution of electronic polarizability suggests that the evolution of electronic structure and its derivative properties can be represented by atomistic models, opening up the possibility of studies of electronic-structure-dependent properties using large-scale atomistic simulations.
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Submitted 15 April, 2023;
originally announced April 2023.
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A system design approach toward integrated cryogenic quantum control systems
Authors:
Mridula Prathapan,
Peter Mueller,
David Heim,
Maria Vittoria Oropallo,
Matthias Braendli,
Pier Andrea Francese,
Marcel Kossel,
Andrea Ruffino,
Cezar Zota,
Eunjung Cha,
Thomas Morf
Abstract:
In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and reconfigurable circuits with low error rates are expected to have superior quantum volumes. Cryogenic CMOS plays a crucial role in the realization of scalable quantum com…
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In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and reconfigurable circuits with low error rates are expected to have superior quantum volumes. Cryogenic CMOS plays a crucial role in the realization of scalable quantum computers, by minimizing the feature size, lowering the cost, power consumption, and implementing low latency error correction. Our approach toward achieving scalable feed-back based control systems includes the design of memory based arbitrary waveform generators (AWG's), wide band radio frequency analog to digital converters, integrated amplifier chain, and state discriminators that can be synchronized with gate sequences. Digitally assisted designs, when implemented in an advanced CMOS node such as 7 nm can reap the benefits of low power due to scaling. A qubit readout chain demands several amplification stages before the digitizer. We propose the co-integration of our in-house developed InP HEMT LNAs with CMOS LNA stages to achieve the required gain at the digitizer input with minimal area. Our approach using high impedance matching between the HEMT LNA and the cryogenic CMOS receiver can relax the design constraints of an inverter-based CMOS LNA, paving the way toward a fully integrated qubit readout chain. The qubit state discriminator consists of a digital signal processor that computes the qubit state from the digitizer output and a pre-determined threshold. The proposed system realizes feedback-based optimal control for error mitigation and reduction of the required data rate through the serial interface to room temperature electronics.
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Submitted 3 November, 2022;
originally announced November 2022.
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A cryogenic SRAM based arbitrary waveform generator in 14 nm for spin qubit control
Authors:
Mridula Prathapan,
Peter Mueller,
Christian Menolfi,
Matthias Braendli,
Marcel Kossel,
Pier Andrea Francese,
David Heim,
Maria Vittoria Oropallo,
Andrea Ruffino,
Cezar Zota,
Thomas Morf
Abstract:
Realization of qubit gate sequences require coherent microwave control pulses with programmable amplitude, duration, spacing and phase. We propose an SRAM based arbitrary waveform generator for cryogenic control of spin qubits. We demonstrate in this work, the cryogenic operation of a fully programmable radio frequency arbitrary waveform generator in 14 nm FinFET technology. The waveform sequence…
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Realization of qubit gate sequences require coherent microwave control pulses with programmable amplitude, duration, spacing and phase. We propose an SRAM based arbitrary waveform generator for cryogenic control of spin qubits. We demonstrate in this work, the cryogenic operation of a fully programmable radio frequency arbitrary waveform generator in 14 nm FinFET technology. The waveform sequence from a control processor can be stored in an SRAM memory array, which can be programmed in real time. The waveform pattern is converted to microwave pulses by a source-series-terminated digital to analog converter. The chip is operational at 4 K, capable of generating an arbitrary envelope shape at the desired carrier frequency. Total power consumption of the AWG is 40-140mW at 4 K, depending upon the baud rate. A wide signal band of 1-17 GHz is measured at 4 K, while multiple qubit control can be achieved using frequency division multiplexing at an average spurious free dynamic range of 40 dB. This work paves the way to optimal qubit control and closed loop feedback control, which is necessary to achieve low latency error mitigation
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Submitted 3 November, 2022;
originally announced November 2022.
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Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
Authors:
Andrea Ruffino,
Tsung-Yeh Yang,
John Michniewicz,
Yatao Peng,
Edoardo Charbon,
Miguel Fernando Gonzalez-Zalba
Abstract:
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quan…
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Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology.
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Submitted 20 January, 2021;
originally announced January 2021.
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Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
Authors:
Tsung-Yeh Yang,
Andrea Ruffino,
John Michniewicz,
Yatao Peng,
Edoardo Charbon,
M. Fernando Gonzalez-Zalba
Abstract:
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance a…
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In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance and subthreshold slope with respect to 300 K. In the quantum regime, all measured devices show Coulomb blockade. This is explained by the formation of quantum dots in the channel, for which a model is proposed. The variability in parameters, important for quantum computing scaling, is also quantified. Our results show that bulk 40-nm node MOSFETs can be readily used for the co-integration of cryo-CMOS classical-quantum circuits at deep cryogenic temperatures and that the variability approaches the uniformity requirements to enable shared control.
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Submitted 28 May, 2020;
originally announced May 2020.
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Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures
Authors:
Bishnu Patra,
Mohammadreza Mehrpoo,
Andrea Ruffino,
Fabio Sebastiano,
Edoardo Charbon,
Masoud Babaie
Abstract:
This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperature (4.2 K). The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters and the resulting insights on modeling of passives at cryogenic tem…
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This paper presents the characterization of microwave passive components, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperature (4.2 K). The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters and the resulting insights on modeling of passives at cryogenic temperatures are provided. Both characterization and modeling, reported for the first time down to 4.2 K, are essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.
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Submitted 29 November, 2019;
originally announced November 2019.
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Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
Authors:
Arnout Beckers,
Farzan Jazaeri,
Andrea Ruffino,
Claudio Bruschini,
Andrea Baschirotto,
Christian Enz
Abstract:
This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parame…
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This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.
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Submitted 4 June, 2018;
originally announced June 2018.
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Interaction of Molecular Oxygen with Hexagonally Reconstructed Au (001) Surface
Authors:
Andrew Loheac,
Andi Barbour,
Vladimir Komanicky,
Chenhui Zhu,
John Collini,
Anthony Ruffino,
Yihua Liu,
Hoydoo You,
Michael S. Pierce
Abstract:
Kinetics of molecular oxygen / Au (001) surface interaction has been studied at high temperature and near atmospheric pressures of O2 gas with in situ x-ray scattering measurements. We find that the hexagonal reconstruction (hex) of Au (001) surface lifts to (1x1) in the presence of O2 gas, indicating that the (1x1) is more favored when some oxygen atoms present on the surface. The measured liftin…
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Kinetics of molecular oxygen / Au (001) surface interaction has been studied at high temperature and near atmospheric pressures of O2 gas with in situ x-ray scattering measurements. We find that the hexagonal reconstruction (hex) of Au (001) surface lifts to (1x1) in the presence of O2 gas, indicating that the (1x1) is more favored when some oxygen atoms present on the surface. The measured lifting rate constant vs. temperature is found to be highest at intermediate temperature exhibiting a 'volcano'-type behavior. At low temperature, the hex-to-(1x1) activation barrier (Eact = 1.3(3) eV) limits the lifting. At high temperature, oxygen adsorption energy (Eads = 1.6(2) eV) limits the lifting. The (1x1)-to-hex activation barrier (Ehex = 0.41(14) eV) is also obtained from hex recovery kinetics. The pressure-temperature (PT) surface phase diagram obtained in this study shows three regions: hex at low P and T, (1x1) at high P and T, and coexistence of the hex and (1x1) at the intermediate P and T.
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Submitted 22 July, 2016;
originally announced July 2016.
