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Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
B. Benhamou-Bui,
C. Consejo,
S. S. Krishtopenko,
M. Szoła,
K. Maussang,
S. Ruffenach,
E. Chauveau,
S. Benlemqwanssa,
C. Bray,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
B. Jouault,
J. Torres,
F. Teppe
Abstract:
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa…
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Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap.
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Submitted 21 July, 2023;
originally announced July 2023.
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Terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
S. Gebert,
C. Consejo,
S. S. Krishtopenko,
S. Ruffenach,
M. Szola,
J. Torres,
C. Bray,
B. Jouault,
M. Orlita,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized…
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Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.
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Submitted 14 January, 2023;
originally announced January 2023.
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Temperature Dependent Zero-Field Splittings in Graphene
Authors:
C. Bray,
K. Maussang,
C. Consejo,
J. A. Delgado-Notario,
S. S. Krishtopenko,
I. Yahniuk,
S. Gebert,
S. Ruffenach,
K. Dinar,
E. Moench,
K. Indykiewicz,
B. Jouault,
J. Torres,
Y. M. Meziani,
W. Knap,
A. Yurgens,
S. D. Ganichev,
F. Teppe
Abstract:
Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupl…
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Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.
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Submitted 23 December, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
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Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
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Experimental evidence for long-distance electrodynamic intermolecular forces
Authors:
Mathias Lechelon,
Yoann Meriguet,
Matteo Gori,
Sandra Ruffenach,
Ilaria Nardecchia,
Elena Floriani,
Dominique Coquillat,
Frédéric Teppe,
Sébastien Mailfert,
Didier Marguet,
Pierre Ferrier,
Luca Varani,
James Sturgis,
Jeremie Torres,
Marco Pettini
Abstract:
Both classical and quantum electrodynamics predict the existence of dipole-dipole long-range electrodynamic intermolecular forces; however, these have never been hitherto experimentally observed. The discovery of completely new and unanticipated forces acting between biomolecules could have considerable impact on our understanding of the dynamics and functioning of the molecular machines at work i…
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Both classical and quantum electrodynamics predict the existence of dipole-dipole long-range electrodynamic intermolecular forces; however, these have never been hitherto experimentally observed. The discovery of completely new and unanticipated forces acting between biomolecules could have considerable impact on our understanding of the dynamics and functioning of the molecular machines at work in living organisms. Here, using two independent experiments, on the basis of different physical effects detected by fluorescence correlation spectroscopy and terahertz spectroscopy, respectively, we demonstrate experimentally the activation of resonant electrodynamic intermolecular forces. This is an unprecedented experimental proof of principle of a physical phenomenon that, having been observed for biomacromolecules and with long-range action (up to 1000 Angstroms), could be of importance for biology. In addition to thermal fluctuations that drive molecular motion randomly, these resonant (and thus selective) electrodynamic forces may contribute to molecular encounters in the crowded cellular space.
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Submitted 17 February, 2022;
originally announced February 2022.
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Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
Authors:
S. S. Krishtopenko,
A. M. Kadykov,
S. Gebert,
S. Ruffenach,
C. Consejo,
J. Torres,
C. Avogadri,
B. Jouault,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond…
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We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels.
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Submitted 27 April, 2020; v1 submitted 10 December, 2019;
originally announced December 2019.
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Massless Dirac fermions in III-V semiconductor quantum wells
Authors:
S. S. Krishtopenko,
W. Desrat,
K. E. Spirin,
C. Consejo,
S. Ruffenach,
F. Gonzalez-Posada,
B. Jouault,
W. Knap,
K. V. Maremyanin,
V. I. Gavrilenko,
G. Boissier,
J. Torres,
M. Zaknoune,
E. Tournié,
F. Teppe
Abstract:
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate…
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We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Γ$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8\cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
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Submitted 15 February, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
Authors:
A. Kadykov,
F. Teppe,
C. Consejo,
L. Viti,
M. Vitiello,
D. Coquillat,
S. Ruffenach,
S. Morozov,
S. Kristopenko,
M. Marcinkiewicz,
N. Dyakonova,
W. Knap,
V. Gavrilenko,
N. N. Michailov,
S. A. Dvoretskii
Abstract:
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological F…
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We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.
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Submitted 27 April, 2018;
originally announced April 2018.
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Temperature-induced topological phase transition in HgTe quantum wells
Authors:
A. M. Kadykov,
S. S. Krishtopenko,
B. Jouault,
W. Desrat,
W. Knap,
S. Ruffenach,
C. Consejo,
J. Torres,
S. V. Morozov,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole…
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We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of $B_c$, we directly extract the critical temperature $T_c$, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.
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Submitted 26 January, 2018; v1 submitted 18 October, 2017;
originally announced October 2017.
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Temperature-driven single-valley Dirac fermions in HgTe quantum wells
Authors:
M. Marcinkiewicz,
S. Ruffenach,
S. S. Krishtopenko,
A. M. Kadykov,
C. Consejo,
D. B. But,
W. Desrat,
W. Knap,
J. Torres,
A. V. Ikonnikov,
K. E. Spirin,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulato…
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We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of $5.6\times10^5$ m$\times$s$^{-1}$. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters.
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Submitted 12 July, 2017; v1 submitted 22 February, 2017;
originally announced February 2017.
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Temperature-dependent magnetospectroscopy of HgTe quantum wells
Authors:
A. V. Ikonnikov,
S. S. Krishtopenko,
O. Drachenko,
M. Goiran,
M. S. Zholudev,
V. V. Platonov,
Yu. B. Kudasov,
A. S. Korshunov,
D. A. Maslov,
I. V. Makarov,
O. M. Surdin,
A. V. Philippov,
M. Marcinkiewicz,
S. Ruffenach,
F. Teppe,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretsky,
V. I. Gavrilenko
Abstract:
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of La…
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We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.
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Submitted 30 August, 2016; v1 submitted 17 June, 2016;
originally announced June 2016.
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Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description
Authors:
F. Teppe,
M. Marcinkiewicz,
S. S. Krishtopenko,
S. Ruffenach,
C. Consejo,
A. M. Kadykov,
W. Desrat,
D. But,
W. Knap,
J. Ludwig,
S. Moon,
D. Smirnov,
M. Orlita,
Z. Jiang,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii
Abstract:
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously…
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It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe.
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Submitted 18 February, 2016;
originally announced February 2016.
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Phase map** of aging process in InN nanostructures: oxygen incorporation and the role of the zincblende phase
Authors:
D. Gonzalez,
J. G. Lozano,
M. Herrera,
F. M. Morales,
S. Ruffenach,
O. Briot,
R. Garcia
Abstract:
Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w…
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Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire map**s, and RGB multilayered image reconstructions allows to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zincblende (zb) volumes, which acts as the intermediate phase between the initial InN-w and the most stable cubic In2O3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason of the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.
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Submitted 23 November, 2009;
originally announced November 2009.
