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Electromagnetically induced transparency based Rydberg-atom sensor for quantum voltage measurements
Authors:
Christopher L. Holloway,
Nikunjkumar Prajapati,
John Kitching,
Jeffery A. Sherman,
Carson Teale,
Alain Rufenacht,
Alexandra B. Artusio-Glimpse,
Matthew T. Simons,
Amy K. Robinson,
Eric B. Norrgard
Abstract:
We investigate the Stark shift in Rydberg rubidium atoms through electromagnetically induced transparency for the measurement of direct current (dc) and 60~Hz alternating current (ac) voltages. This technique has direct applications to atom-based measurements of dc and ac voltage and the calibration of voltage instrumentation. We present experimental results for different atomic states that allow…
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We investigate the Stark shift in Rydberg rubidium atoms through electromagnetically induced transparency for the measurement of direct current (dc) and 60~Hz alternating current (ac) voltages. This technique has direct applications to atom-based measurements of dc and ac voltage and the calibration of voltage instrumentation. We present experimental results for different atomic states that allow for dc and ac voltage measurements ranging from 0~V to 12~V. A Rydberg atom-based voltage standard could become an alternative calibration method with more favorable size, weight, power consumption, and cost compared to the more precise Josephson voltage standard. In this study, we also demonstrate how the voltage measurements can be utilized to determine the atomic polarizability for the Rydberg states. The Rydberg atom-based voltage measurement technology would become a complimentary method for dissemination of the voltage scale directly to the end user.
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Submitted 22 October, 2021; v1 submitted 5 October, 2021;
originally announced October 2021.
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Electrostatic Modulation of the Superfluid Density in a Ultrathin La2-xSrxCuO4 Film
Authors:
A. Rufenacht,
J. -P. Locquet,
J. Fompeyrine,
D. Caimi,
P. Martinoli
Abstract:
By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}…
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By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}$ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation $T_{c} \propto n_{s\Box}(T=0)$ in the underdoped regime of copper-oxide superconductors.
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Submitted 25 July, 2006; v1 submitted 3 March, 2006;
originally announced March 2006.
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Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films
Authors:
A. Rufenacht,
P. Chappatte,
S. Gariglio,
Ch. Leemann,
J. Fompeyrine,
J. -P. Locquet,
P. Martinoli
Abstract:
We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main resu…
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We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $λ_{ab}(0)$ = 535 nm.
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Submitted 13 February, 2003;
originally announced February 2003.
