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Emergent room-temperature ferroelectricity in spark-plasma sintered DyCrO$_3$ and LaCrO$_3$
Authors:
Suryakanta Mishra,
Keerthana,
Krishna Rudrapal,
Biswajit Jana,
Kazi Parvez Islam,
Archna Sagdeo,
Ayan Roy Chaudhuri,
Venimadhav Adyam,
Debraj Choudhury
Abstract:
Identification of novel multiferroic materials with high-ordering temperatures remains at the forefront of condensed matter physics research. In this regard, the antiferromagnetic RCrO$_3$ compounds (like GdCrO$_3$) constitute a promising class of multiferroic compounds, which, however, mostly become ferroelectric concomitant with the antiferromagnetic ordering much below room-temperature, arising…
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Identification of novel multiferroic materials with high-ordering temperatures remains at the forefront of condensed matter physics research. In this regard, the antiferromagnetic RCrO$_3$ compounds (like GdCrO$_3$) constitute a promising class of multiferroic compounds, which, however, mostly become ferroelectric concomitant with the antiferromagnetic ordering much below room-temperature, arising from a subtle competition between the ferroelectric off-centering mode and a non-polar antiferrodistortive rotation mode that inhibits ferroelectricity. Recently, room-temperature ferroelectricity of structural origin, arising from off-centering displacements of R and Cr ions, has been identified in spark-plasma sintered GdCrO$_3$ [Suryakanta Mishra et al., Phys. Rev. B 104, L180101 (2021)]. Interestingly, some of the experimentally observed non-ferroelectric RCrO$_3$ compounds have been theoretically predicted to host similar ferroelectric instabilities. Here, we have identified two such non-ferroelectric RCrO3 compounds, one DyCrO$_3$ (which is reported as a quantum paraelectric) and another LaCrO$_3$ (which is paraelectric), and using a modified synthesis protocol involving spark-plasma-sintering (SPS), we have been successful in engineering an intrinsic room-temperature ferroelectricity in the paramagnetic state, driven by noncentrosymmetric structural phase in both SPS sintered DyCrO$_3$ and LaCrO$_3$, in contrast to room-temperature paraelectricity in solid-state synthesized DyCrO$_3$ and LaCrO$_3$. While the ferroelectricity in SPS-prepared DyCrO$_3$ and LaCrO$_3$ is stable at room-temperature, it undergoes an irreversible transition from a ferroelectric (Pna2$_1$) phase to a paraelectric (Pbnm) phase at 440 K. Significantly, SPS-sintered LaCrO$_3$, which undergoes antiferromagnetic ordering at 290 K, emerges as a promising near room-temperature multiferroic material.
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Submitted 24 June, 2023; v1 submitted 19 May, 2023;
originally announced May 2023.
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Evolution of Resistive Switching Characteristics in WO3-x-based MIM Devices by Tailoring Oxygen Deficiency
Authors:
Krishna Rudrapal,
Biswajit Jana,
Venimadhav Adyam,
Ayan Roy Chaudhuri
Abstract:
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been studied by measuring their DC current voltage properties. Switchability of the resistance states in the memristors have been found to depend strongly on the VOs…
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We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been studied by measuring their DC current voltage properties. Switchability of the resistance states in the memristors have been found to depend strongly on the VOs concentration in the WO3-x layer. Depending on x, the memristors exhibited forming-free bipolar, forming-required bipolar and non-formable characteristics. Devices with high VOs concentration (~1*1021 cm-3) exhibited lower initial resistance and memory window of only 15, which has been increased to ~6500 with reducing VOs concentration to ~5.8*1020 cm-3. Forming-free, stable RS with memory window of ~2000 have been realized for a memristor possessing VOs concentration of ~6.2*1020 cm-3. Investigation of the conduction mechanism suggests that tailoring VOs concentration modifies the formation and dimension of the conducting filaments as well as the Schottky barrier height at WO3-x/Pt interface which deterministically modulates RS characteristics of the WO3-x based memristors.
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Submitted 27 November, 2022;
originally announced November 2022.
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Engineering room-temperature multiferroicity in Bi and Fe codoped BaTiO3
Authors:
Pratap Pal,
Tapas Paramanik,
Krishna Rudrapal,
Supriyo Majumder,
Satish Yadav,
Sudipta Mahana,
Dinesh Topwal,
Ram Janay Choudhary,
Kiran Singh,
Ayan Roy Chaudhuri,
Debraj Choudhury
Abstract:
Fe do** into BaTiO3, stabilizes the paraelectric hexagonal phase in place of the ferroelectric tetragonal one [P. Pal et al. Phys. Rev. B, 101, 064409 (2020)]. We show that simultaneous do** of Bi along with Fe into BaTiO3 effectively enhances the magnetoelectric (ME) multiferroic response (both ferromagnetism and ferroelectricity) at room-temperature, through careful tuning of Fe valency alon…
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Fe do** into BaTiO3, stabilizes the paraelectric hexagonal phase in place of the ferroelectric tetragonal one [P. Pal et al. Phys. Rev. B, 101, 064409 (2020)]. We show that simultaneous do** of Bi along with Fe into BaTiO3 effectively enhances the magnetoelectric (ME) multiferroic response (both ferromagnetism and ferroelectricity) at room-temperature, through careful tuning of Fe valency along with the controlled-recovery of ferroelectric-tetragonal phase. We also report systematic increase in large dielectric constant values as well as reduction in loss tangent values with relatively moderate temperature variation of dielectric constant around room-temperature with increasing Bi do** content in Ba1-xBixTi0.9Fe0.1O3 (0<x<0.1), which makes the higher Bi-Fe codoped sample (x=0.08) promising for the use as room-temperature high-k dielectric material. Interestingly, x=0.08 (Bi-Fe codoped) sample is not only found to be ferroelectrically (~20 times) and ferromagnetically (~6 times) stronger than x=0 (only Fe-doped) at room temperature, but also observed to be better insulating (larger bandgap) with indirect signatures of larger ME coupling as indicated from anomalous reduction of magnetic coercive field with decreasing temperature. Thus, room-temperature ME multiferroicity has been engineered in Bi and Fe codoped BTO (BaTiO3) compounds.
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Submitted 14 August, 2020;
originally announced August 2020.
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Origin and tuning of room-temperature multiferroicity in Fe doped BaTiO$_3$
Authors:
Pratap Pal,
Krishna Rudrapal,
Sudipta Mahana,
Satish Yadav,
Kiran Singh,
Dinesh Topwal,
Ayan Roy Chaudhuri,
Debraj Choudhury
Abstract:
Simultaneous co-existence of room-temperature(T) ferromagnetism and ferroelectricity in Fe doped BaTiO$_3$ (BTO) is intriguing, as such Fe do** into tetragonal BTO, a room-T ferroelectric (FE), results in the stabilization of its hexagonal polymorph which is FE only below $\sim$80K. Here, we investigate its origin and show that Fe-doped BTO has a mixed-phase room-temperature multiferroicity, whe…
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Simultaneous co-existence of room-temperature(T) ferromagnetism and ferroelectricity in Fe doped BaTiO$_3$ (BTO) is intriguing, as such Fe do** into tetragonal BTO, a room-T ferroelectric (FE), results in the stabilization of its hexagonal polymorph which is FE only below $\sim$80K. Here, we investigate its origin and show that Fe-doped BTO has a mixed-phase room-temperature multiferroicity, where the ferromagnetism comes from the majority hexagonal phase and a minority tetragonal phase gives rise to the observed weak ferroelectricity. In order to achieve majority tetragonal phase (responsible for room-T ferroelectricity) in Fe-doped BTO, we investigate the role of different parameters which primarily control the PE hexagonal phase stability over the FE tetragonal one and identify three major factors namely, the effect of ionic size, Jahn-Teller (J-T) distortions and oxygen vacancies (OVs), to be primarily responsible. The effect of ionic size which can be qualitatively represented using the Goldschmidt's tolerance (GT) factor seems to be the major dictating factor for the hexagonal phase stability. The understanding of these factors not only enables us to control them but also, achieve suitable co-doped BTO compound with enhanced room-T multiferroic properties.
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Submitted 1 January, 2020; v1 submitted 31 July, 2019;
originally announced July 2019.
