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Oxygen vacancies kinetics in $TaO_{2-h}$/$Ta_{2}$$O_{5-x}$ memristive interfaces
Authors:
C. Ferreyra,
R. Leal Martir,
D. Rubi,
María José Sánchez
Abstract:
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combination of experiments and theoretical simulations, OV dynamics in $Pt/TaO_{2-h}/Ta_{2}O_{5-x}/TaO_${2-y}$/Pt$ devices. In particular, we focus on the RESET transition (from low to high resistance), induced by the applicati…
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Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combination of experiments and theoretical simulations, OV dynamics in $Pt/TaO_{2-h}/Ta_{2}O_{5-x}/TaO_${2-y}$/Pt$ devices. In particular, we focus on the RESET transition (from low to high resistance), induced by the application of electrical pulse(s), by choosing different initial OV profiles and studying their kinetics during the mentioned process. We demonstrate that by selecting specific OV profiles it is possible to tune the characteristic time-scale of the RESET. Finally, we show that the implementation of gradual RESETs, induced by applying many (small) successive pulses, allows estimating the activation energies involved in the OV electromigration process. Our results help paving the way for OV engineering aiming at optimizing key memristive figures such as switching speed or power consumption, which are highly relevant for neuromorphic or in-memory computing implementations.
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Submitted 19 June, 2024;
originally announced June 2024.
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Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices
Authors:
C. Ferreyra,
M. Badillo,
M. J. Sánchez,
M. Acuautla,
B. Noheda,
D. Rubi
Abstract:
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO…
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Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO$_2$/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices.
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Submitted 17 May, 2024;
originally announced May 2024.
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Multi-mem behavior at reduced voltages in La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ perovskite modified with Sm:CeO$_2$
Authors:
Wilson Román Acevedo,
Myriam H. Aguirre,
Beatriz Noheda,
Diego Rubi
Abstract:
Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce…
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Neuromorphic computing aims to mimic the architecture and the information processing mechanisms of the mammalian brain, appearing as the only avenue that offers significant energy savings compared to the standard digital computers. Memcapacitive devices (which can change their capacitance between different non-volatile states upon the application of electrical stimulation) can significantly reduce the energy consumption of bioinspired circuitry. In the present work, we study the multimem (memristive and memcapacitive) behavior of devices based on thin films of the topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) perovskite modified with Sm:Ce$O_2$ (SCO), grown on Nb:SrTiO$_{3}$ with (001) and (110) out of plane orientations. Either the self assembling at the nanoscale of both LSMCO and SCO phases or the do** with Ce(Sm) of the LSMCO perovskite were observed for different fabrication conditions and out of plane orientations. The impact of these changes on the device electrical behavior was determined. The optimum devices resulted those with (110) orientation and Ce(Sm) do** the perovskite. These devices displayed a multimem behavior with robust memcapacitance and significantly lower operation voltages (especially the RESET voltage) in comparison with devices based on pristine LSMCO. In addition, they were able to endure electrical cycling (and the concomitant perovskite topotactic redox transition between oxidized and reduced phases) without suffering nanostructural or chemical changes. We link these properties to an enhanced perovskite reducibility upon Ce(Sm) do**. Our work contributes to increase the reliability of LSMCO based multimem systems and to reduce their operating voltages closer to the 1 V threshold, which are key issues for the development of nanodevices for neuromorphic or in memory computing.
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Submitted 22 April, 2024;
originally announced April 2024.
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Effect of memristorś potentiation-depression curves peculiarities in the convergence of physical perceptrons
Authors:
Walter Quiñonez,
María José Sánchez,
Diego Rubi
Abstract:
Neuromorphic computing aims to emulate the architecture and information processing mechanisms of the mammalian brain. This includes the implementation by hardware of neural networks. Oxide-based memristor arrays with cross-bar architecture appear as a possible physical implementation of neural networks.In this paper, we obtain experimental potentiation-depression (P-D) curves on different manganit…
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Neuromorphic computing aims to emulate the architecture and information processing mechanisms of the mammalian brain. This includes the implementation by hardware of neural networks. Oxide-based memristor arrays with cross-bar architecture appear as a possible physical implementation of neural networks.In this paper, we obtain experimental potentiation-depression (P-D) curves on different manganite-based memristive systems and simulate the learning process of perceptrons for character recognition. We analyze how the specific characteristics of the P-D curves affect the convergence time -- characterized by the EPOCHs-to-convergence (ETC) parameter -- of the network. Our work shows that ETC is reduced for systems displaying P-D curves with relatively low granularity and non-linear and asymmetric response. In addition, we also show that noise injection during the synaptic weight actualization further reduces the ETC. The results obtained here are expected to contribute to the optimization of hardware neural networks based on memristors cross-bar arrays.
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Submitted 10 August, 2023;
originally announced August 2023.
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Coexistance of volatile and non-volatile memristive effects in phase-separated La$_{0.5}$Ca$_{0.5}$MnO$_{3}$-based devices
Authors:
G. A. Ramírez,
W. Román Acevedo,
M. Rengifo,
J. M. Nuñez,
M. H. Aguirre,
J. Briático,
D. Rubi
Abstract:
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combinat…
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In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes arising from self-heating effects in the vicinity of a metal-to-insulator transition. At higher temperatures (140 K and 200 K) we measured a combination of volatile and non-volatile effects arising from the synergy between self-heating effects and ferromagnetic-metallic phase growth induced by an external electrical field. The results reported here add phase separated manganites to the list of materials which can electrically mimic, on the same device, the behavior of both neurons and synapses, a feature that might be useful for the development of neuromorphic computing hardware
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Submitted 9 November, 2022;
originally announced November 2022.
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Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
Authors:
Rodrigo Leal Martir,
María José Sánchez,
Myriam Aguirre,
Walter Quiñonez,
Cristian Ferreyra,
Carlos Acha,
Jerome Lecourt,
Ulrike Lüders,
Diego Rubi
Abstract:
Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of elect…
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Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOx and TaOy layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOx and TaOy layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.
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Submitted 7 July, 2022;
originally announced July 2022.
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Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$
Authors:
W. Román Acevedo,
M. H. Aguirre,
C. Ferreyra,
M. J. Sánchez,
M. Rengifo,
C. A. M. van den Bosch,
A. Aguadero,
B. Noheda,
D. Rubi
Abstract:
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. Ho…
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Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices
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Submitted 7 October, 2021;
originally announced October 2021.
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Polarons formation in Bi-deficient BaBiO$_3$
Authors:
W. Román Acevedo,
S. Di Napoli,
F. Romano,
G. Rodríguez Ruiz,
P. Nukala,
C. Quinteros,
J. Lecourt,
U. Lüders,
V. Vildosola,
D. Rubi
Abstract:
BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb do**. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia cap** layer. By combinin…
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BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb do**. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it is possible to synthesize BaBiO$_3$ thin layers with Bi-vacancies above 8-10% by depositing an yttrium-stabilized zirconia cap** layer. By combining transport measurements with ab initio calculations we propose an scenario where the Bi-vacancies give rise to the formation of polarons and suggest that the electrical transport is dominated by the migration of these polarons trapped at Bi$^{3+}$ sites. Our work shows that cation vacancies engineering -- hardly explored to date -- appears as a promising pathway to tune the electronic and functional properties of perovskites.
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Submitted 9 April, 2021;
originally announced April 2021.
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On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices
Authors:
C. Ferreyra,
M. Rengifo,
M. J. Sánchez,
A. S. Everhard,
B. Noheda,
D. Rubi
Abstract:
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen v…
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Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of two effects: the modulation of metal/ferroelectric interface barriers by the switchable ferroelectric polarization and the electromigration of oxygen vacancies, with the depolarizing field playing a fundamental role in the latter. We simulate our experimental results with a phenomenological model that includes both effects and we reproduce several non-trivial features of the electrical response, including resistance relaxations observed after external poling. Besides providing insight into the underlying physics of these complex devices, our work suggests that it is possible to combine non-volatile and volatile resistive changes in single ferroelectric memristors, an issue that could be useful for the development of neuromorphic devices.
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Submitted 18 June, 2020;
originally announced June 2020.
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Electric selective activation of memristive interfaces in TaO$_x$-based devices
Authors:
C. Ferreyra,
M. J. Sánchez,
M. Aguirre,
C. Acha,
S. Bengió,
J. Lecourt,
U. Lüders,
D. Rubi
Abstract:
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfac…
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The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
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Submitted 8 August, 2019;
originally announced August 2019.
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Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ Topotactic Redox Interface
Authors:
W. R. Acevedo,
C. A. M. van den Bosch,
M. H. Aguirre,
C. Acha,
A. Cavallaro,
C. Ferreyra,
M. J. Sánchez,
L. Patrone,
A. Aguadero,
D. Rubi
Abstract:
The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large…
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The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ (LSMCO, 0 $\leq$ $δ$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO$_{3}$/LSMCO/Pt devices a memcapacitive effect C$_{HIGH}$/C$_{LOW}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.
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Submitted 28 January, 2020; v1 submitted 14 May, 2019;
originally announced May 2019.
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Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
Authors:
Cristian Ferreyra,
Wilson Román Acevedo,
Ralph Gay,
Diego Rubi,
María José Sánchez
Abstract:
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the motion of oxygen vacancies (OV) at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to conducting, i.e.…
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Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the motion of oxygen vacancies (OV) at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to conducting, i.e. to accomplish the resistive switching effect. The control of OV dynamics has a direct effect on the resistance changes, and therefore on different figures of memristive devices, such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow for measurements of OV dynamics, but also of theoretical studies that shed light on the involved mechanisms. Along this goal, we analize the OV dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of OV can be manipulated by using different electrical stimuli protocols to optimize device figures such as the ON/OFF ratio or the energy dissipation linked to the writing process. Analytical expressions for attained resistance values, including the high and low resistance states are derived in terms of total transferred OV in a nanoscale region of the interface. Our predictions are validated with experiments performed in Ti/La$_{1/3}$Ca$_{2/3}$MnO$_{3}$ redox memristive devices.
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Submitted 23 November, 2018;
originally announced November 2018.
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Comment on "Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films"
Authors:
Diego Rubi,
Ana María Llois,
Verónica Vildosola
Abstract:
In a recent work by Ji Seop Oh et al., BaBiO3(001) thin films were grown on SrTiO3 by Pulsed Laser Deposition. It was argued that the films are BiO2-terminated from the modelling of angle-resolved photoemission spectroscopy experiments. The authors claim, in opposition to previous theoretical predictions, that there are no metallic surface states on their films. In this short comment we question t…
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In a recent work by Ji Seop Oh et al., BaBiO3(001) thin films were grown on SrTiO3 by Pulsed Laser Deposition. It was argued that the films are BiO2-terminated from the modelling of angle-resolved photoemission spectroscopy experiments. The authors claim, in opposition to previous theoretical predictions, that there are no metallic surface states on their films. In this short comment we question that the authors have enough evidence to make such a claim, as we consider that the large mismatch between SrTiO3 and BaBiO3 and the lack of control of their fabrication process with reflection high energy electron difraction could unlikely give high quality films with a single BiO2- termination, which is one of the requisites for the stabilization of these surface metallic states.
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Submitted 2 July, 2018;
originally announced July 2018.
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Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures
Authors:
W. Román Acevedo,
C. Acha,
M. J. Sánchez,
P. Levy,
D. Rubi
Abstract:
We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy,…
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We report on the growth and characterization of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active RS oxides adds functionalities in relation to single-oxide devices. We understand that these multilevel devices are interesting and promising as their fabrication procedure is rather simple and they are fully compatible with standard Si-based electronics.
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Submitted 19 January, 2017; v1 submitted 4 November, 2016;
originally announced November 2016.
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Manganite-based three level memristive devices with self-healing capability
Authors:
W. Román Acevedo,
D. Rubi,
J. Lecourt,
U. Lüders,
F. Gomez-Marlasca,
P. Granell,
F. Golmar,
P. Levy
Abstract:
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an interm…
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We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding $10^4$ s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si$O_x$ layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.
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Submitted 16 June, 2016;
originally announced June 2016.
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Tuning the electronic properties at the surface of BaBiO3 thin films
Authors:
Cristian Ferreyra,
Francisco Guller,
Florencia Marchini,
Ulrike Lüders,
Cecilia Albornoz,
Ana Gabriela Leyva,
Federico José Williams,
Ana María Llois,
Verónica Vildosola,
Diego Rubi
Abstract:
The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposit…
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The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron do** at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.
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Submitted 2 June, 2016; v1 submitted 26 August, 2015;
originally announced August 2015.
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Epitaxial TbMnO3 thin films on SrTiO3 substrates: A structural study
Authors:
C. J. M. Daumont,
D. Mannix,
Sriram Venkatesan,
D. Rubi,
G. Catalan,
B. J. Kooi,
J. Th. M. De Hosson,
B. Noheda
Abstract:
TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while kee** constant the in-plane compression thereby leaving the out-of-plane lattice…
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TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while kee** constant the in-plane compression thereby leaving the out-of-plane lattice spacing unchanged. The domain microstructure of the films is also revealed, showing an increasing number of orthorhombic domains as the thickness is decreased: we directly observe ferroelastic domains as narrow as 4nm. The high density of domain walls may explain the induced ferromagnetism observed in the films, while both the decreased anisotropy and the small size of the domains could account for the absence of a ferroelectric spin spiral phase.
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Submitted 11 April, 2009; v1 submitted 24 November, 2008;
originally announced November 2008.
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Ferromagnetism and increased ionicity in epitaxially grown TbMnO3 films
Authors:
D. Rubi,
C. de Graaf,
C. J. M. Daumont,
D. Mannix,
R. Broer,
B. Noheda
Abstract:
Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the ordering temperature of ~40K. X-ray photoemission measurements in the films show that the Mn-3s splittin…
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Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the ordering temperature of ~40K. X-ray photoemission measurements in the films show that the Mn-3s splitting is 0.3eV larger than that of the bulk. Ab initio embedded cluster calculations yield Mn-3s splittings that are in agreement with the experiment and reveal that the larger observed values are due to a larger ionicity of the films.
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Submitted 28 October, 2008;
originally announced October 2008.
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Magnetic and dielectric properties of YbMnO3 perovskite thin films
Authors:
D. Rubi,
Sriram Venkatesan,
B. J. Kooi,
J. Th. M. De Hosson,
T. T. M. Palstra,
B. Noheda
Abstract:
Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness do…
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Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3. Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly-oriented thin films, with thickness down to ~30nm, can be obtained showing magneto-dielectric coupling and magnetic responses as those expected for the E-phase. We observe that the magnetic properties depart from the bulk behavior only in the case of ultrathin films (d< 30nm), which display a glassy magnetic behavior. We show that strain effects alone cannot account for this difference and that the film morphology plays, instead, a crucial role.
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Submitted 10 July, 2008;
originally announced July 2008.
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Growth of flat SrRuO3(111) thin films suitable as bottom electrodes in heterostructures
Authors:
D. Rubi,
A. H. G. Vlooswijk,
B. Noheda
Abstract:
Thin film growth of ferroelectric or multiferroic materials on SrTiO3(111) with a buffer electrode has been hampered by the difficulty of growing flat electrodes on this polar orientation. We report on the growth and characterization of SrRuO3 thin films deposited by pulsed laser deposition on SrTiO3(111). We show that our SrRuO3(111) films are epitaxial and display magnetic bulk-like properties…
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Thin film growth of ferroelectric or multiferroic materials on SrTiO3(111) with a buffer electrode has been hampered by the difficulty of growing flat electrodes on this polar orientation. We report on the growth and characterization of SrRuO3 thin films deposited by pulsed laser deposition on SrTiO3(111). We show that our SrRuO3(111) films are epitaxial and display magnetic bulk-like properties. Films presenting a thickness between 20 and 30nm are found to be very flat (with an RMS of about 0.5 nm) and therefore suitable as bottom electrodes in heterostructures.
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Submitted 10 July, 2008;
originally announced July 2008.
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Reversible Ferromagnetic Switching in Zno:(Co,Mn) Powders
Authors:
D. Rubi,
J. Fontcuberta,
A. Calleja,
Ll. Aragones,
X. G. Capdevila,
M. Segarra
Abstract:
We report here on the magnetic properties of ZnO:Mn and ZnO:Co doped nanoparticles. We have found that the ferromagnetism of ZnO:Mn can be switched on and off by consecutive low-temperature annealings in O2 and N2 respectively, while the opposite phenomenology was observed for ZnO:Co. These results suggest that different defects (presumably n-type for ZnO:Co and p-type for ZnO:Mn) are required t…
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We report here on the magnetic properties of ZnO:Mn and ZnO:Co doped nanoparticles. We have found that the ferromagnetism of ZnO:Mn can be switched on and off by consecutive low-temperature annealings in O2 and N2 respectively, while the opposite phenomenology was observed for ZnO:Co. These results suggest that different defects (presumably n-type for ZnO:Co and p-type for ZnO:Mn) are required to induce a ferromagnetic coupling in each case. We will argue that ferromagnetism is likely to be restricted to a very thin, nanometric layer, at the grain surface. These findings reveal and give insight into the dramatic relevance of surface effects for the occurrence of ferromagnetism in ZnO doped oxides.
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Submitted 19 January, 2007;
originally announced January 2007.
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Structural and magnetic properties of ZnO:TM (TM: Co,Mn) nanopowders
Authors:
D. Rubi,
A. Calleja,
J. Arbiol,
X. G. Capdevila,
M. Segarra,
Ll. Aragones,
J. Fontcuberta
Abstract:
We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromag…
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We report on the structural and magnetic characterization of Co0.1Zn0.9O and Mn0.1Zn0.9O nanopowders obtained by a soft chemistry route. We show that those samples fired at low temperatures display a ferromagnetic interaction that can not be attributed to the presence of impurities. A magnetic aging mechanism is observed, reflecting the key role played by defects in the stabilization of ferromagnetism in this kind of diluted magnetic semiconductors.
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Submitted 1 August, 2006;
originally announced August 2006.
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Electronic self-do** of Mo-states in A2FeMoO6 (A=Ca, Sr and Ba) half-metallic ferromagnets - a Nuclear Magnetic Resonance study
Authors:
M. Wojcik,
E. Jedryka,
S. Nadolski,
D. Rubi,
C. Frontera,
J. Fontcuberta,
B. Jurca,
N. Dragoe,
P. Berthet
Abstract:
A systematic study of (A,A')2FeMoO6 (A,A'=Ca, Sr, Ba) ferromagnetic oxides with double perovskite structure has been performed using 95,97Mo and 57Fe NMR spectroscopy. These oxides are isoelectronic but have substantially different Curie temperatures. The NMR analysis provides clear evidence that the magnetic moment at Mo sites is not constant but varies sensitively with the ionic size of the al…
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A systematic study of (A,A')2FeMoO6 (A,A'=Ca, Sr, Ba) ferromagnetic oxides with double perovskite structure has been performed using 95,97Mo and 57Fe NMR spectroscopy. These oxides are isoelectronic but have substantially different Curie temperatures. The NMR analysis provides clear evidence that the magnetic moment at Mo sites is not constant but varies sensitively with the ionic size of the alkaline ions. The 95,97Mo frequency, and thus the electronic charge at Mo ions, is found to be smaller in Ba and Ca than in Sr-based oxides. The charge release from Mo sites is accompanied by an uptake at Fe sites, and thus a self-do** Fe-Mo process is observed. This process is controlled by relevant structural parameters: the Fe-O-Mo bond length and bending. A clear relationship between the Curie temperature and the magnetic moment and thus electron density at Mo sites has been disclosed. The relevance of these findings for the understanding of ferromagnetic coupling in double perovskites is discussed.
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Submitted 7 June, 2004;
originally announced June 2004.
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NMR evidence for selective enhancement of Mo magnetic moment by electron do** in SrxLa2-xFeMoO6
Authors:
M. Wojcik,
E. Jedryka,
S. Nadolski,
J. Navarro,
D. Rubi,
J. Fontcuberta
Abstract:
95, 97Mo NMR experiments have been performed on a series of Sr2FeMoO6 and electron-doped Sr2-xLaxFeMoO6 ceramics. Detailed analysis of the NMR spectra from pristine Sr2FeMoO6 conclusively shows that the Mo hyperfine field is mainly due to atomic Mo magnetic moments. No contribution of transferred hyperfine field has been observed, confirming the absence of s-electrons in the conduction band. Upo…
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95, 97Mo NMR experiments have been performed on a series of Sr2FeMoO6 and electron-doped Sr2-xLaxFeMoO6 ceramics. Detailed analysis of the NMR spectra from pristine Sr2FeMoO6 conclusively shows that the Mo hyperfine field is mainly due to atomic Mo magnetic moments. No contribution of transferred hyperfine field has been observed, confirming the absence of s-electrons in the conduction band. Upon La do**, the NMR frequency (hyperfine field) gradually increases proving that the concentration of spin polarized electrons at Mo ion is enhanced by the La substitution. A simple linear correlation between magnetic moment at Mo sites and the Curie temperature of the system has been found. Implications for understanding the electronic structure and the ferromagnetic coupling in these systems are underlined.
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Submitted 29 October, 2003;
originally announced October 2003.
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Effect of band-filling and structural distortions on the Curie temperature of Fe-Mo double perovkites
Authors:
Carlos Frontera,
Diego Rubí,
José Navarro,
José Luis García-Muñoz,
Josep Fontcuberta,
Clemens Ritter
Abstract:
By means of high resolution neutron powder diffraction at low temperature we have characterized the structural details of $\rm La_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.5$) and $\rm Ca_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.6$) series of compounds. This study reveals a similar variation of the mean bond-angle \FeOMo in both series. In contrast, the mean bond-distance \FeMoO\ increases with…
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By means of high resolution neutron powder diffraction at low temperature we have characterized the structural details of $\rm La_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.5$) and $\rm Ca_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.6$) series of compounds. This study reveals a similar variation of the mean bond-angle \FeOMo in both series. In contrast, the mean bond-distance \FeMoO\ increases with La but not with Ca substitution. Both series also present a different evolution of the Curie temperature ($T_C$), which raises in the La series and slightly decreases in the Ca one. We thus conclude that the enhancement of $T_C$ in the La series is due to the electron filling of the conduction band and a concomitant rising of the density of states at the Fermi level.
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Submitted 28 April, 2003;
originally announced April 2003.
