Showing 1–12 of 12 results for author: Rowell, J M

Suppression of the critical temperature of superconducting NdFeAs(OF) single crystals by Kondo-like defect sites induced by alpha-particle irradiation

Authors: C. Tarantini, M. Putti, A. Gurevich, Y. Shen, R. K. Singh, J. M. Rowell, N. Newman, D. C. Larbalestier, Peng Cheng, Ying Jia, Hai-Hu Wen

Abstract: We report a comprehensive investigation of the suppression of the critical temperature Tc of NdFeAs(OF) single crystal by alpha-particle irradiation. Our data indicate that irradiation defects produce both nonmagnetic and magnetic scattering, resulting in the Kondo-like excess resistance $Δρ(T)\propto ln T$ over 2 decades in temperatures above $T_c$. Despite high densities of irradiation defects… ▽ More We report a comprehensive investigation of the suppression of the critical temperature Tc of NdFeAs(OF) single crystal by alpha-particle irradiation. Our data indicate that irradiation defects produce both nonmagnetic and magnetic scattering, resulting in the Kondo-like excess resistance $Δρ(T)\propto ln T$ over 2 decades in temperatures above $T_c$. Despite high densities of irradiation defects, the dose at which $T_c$ is suppressed to zero is comparable to that for MgB2 but is well above the corresponding values for cuprates. △ Less

Submitted 27 October, 2009; originally announced October 2009.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. Lett. 104, 087002 (2010)

Effect of oxygen incorporation on normal and superconducting properties of MgB2 films

Authors: R. K. Singh, Y. Shen, R. Gandikota, C. Carvalho, J. M. Rowell, N. Newman

Abstract: Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is distributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated criti… ▽ More Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is distributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated critical fields (>45 T) and slopes of critical field versus temperature (1.4 T/K) are observed. Our results suggest that low growth temperatures (300oC) and oxygen do** (>0.65%) can produce MgB2 with high Jc values in field and Hc2 for high-field magnet applications. △ Less

Submitted 12 September, 2008; originally announced September 2008.

Comments: 10 pages, 3 figures

Effect of stoichiometry on oxygen incorporation in MgB2 thin films

Authors: R K Singh, Y Shen, R Gandikota, J M Rowell, N Newman

Abstract: The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film s… ▽ More The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg rich films and in films exposed to humid atmospheres. △ Less

Submitted 25 September, 2007; originally announced September 2007.

Comments: 10 pages, 6 figures, 1 table

Effect of Rb and Cs-do** on superconducting properties of MgB2 thin films

Authors: R K Singh, Y Shen, R Gandikota, D Wright, C Carvalho, J M Rowell, N Newman

Abstract: Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) f… ▽ More Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) for similar experiments on MgB2 powders. The lack of a significant change in Tc and intra-granular carrier scattering suggests that Rb and Cs diffuse into the film, but do not enter the grains. Instead, the observed changes in the electrical properties, including a significant drop in Jc and an increase in delta rho (rho300-rho40), arise from a decrease in inter-granular connectivity due to segregation of the heavy alkaline metals and other impurities (i.e. C and O) introduced into the grain boundary regions during the anneals. △ Less

Submitted 25 September, 2007; originally announced September 2007.

MgB2 tunnel junctions with native or thermal oxide barriers

Authors: R. K. Singh, R. Gandikota, J. Kim, N. Newman, J. M. Rowell

Abstract: MgB2 tunnel junctions (MgB2/barrier/MgB2) were fabricated using a native oxide grown on the bottom MgB2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300oC, even over junction areas of ~1 mm2. Studies of such junctions, and those of the type MgB2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB2 exhibit a… ▽ More MgB2 tunnel junctions (MgB2/barrier/MgB2) were fabricated using a native oxide grown on the bottom MgB2 film as the tunnel barrier. Such barriers therefore survive the deposition of the second electrode at 300oC, even over junction areas of ~1 mm2. Studies of such junctions, and those of the type MgB2/native or thermal oxide/metal (Pb, Au, or Ag) show that tunnel barriers grown on MgB2 exhibit a wide range of barrier heights and widths. △ Less

Submitted 8 April, 2006; originally announced April 2006.

Comments: 9 pages, 3 figures

Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films

Authors: R. Gandikota, R. K. Singh, J. Kim, B. Wilkens, N. Newman, J. M. Rowell, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, S. Y. Xu, Qi Li, B. H. Moeckly

Abstract: The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2… ▽ More The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage. △ Less

Submitted 31 March, 2005; originally announced March 2005.

Comments: 15 pages including one table and three figures; Submitted to Applied Physics Letters

Effect of damage by 2-MeV He ions on the normal and superconducting properties of magnesium diboride

Authors: R. Gandikota, R. K. Singh, J. Kim, B. Wilkens, N. Newman, J. M. Rowell, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, S. Y. Xu, Qi Li

Abstract: We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K… ▽ More We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K and we see no evidence for a saturation of Tc at about 20 K, contrary to the predictions of the Tc of MgB2 in the dirty limit of interband scattering. △ Less

Submitted 26 October, 2004; v1 submitted 25 October, 2004; originally announced October 2004.

Comments: 14 pages and 3 figures; Submitted to Applied Physics Letters

Critical Current Density and Resistivity of MgB2 Films

Authors: J. M. Rowell, S. Y. Xu, X. H. Zeng, A. V. Pogrebnyakov, Q. Li, X. X. Xi, J. M. Redwing, W. Tian, X. Pan

Abstract: The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a co… ▽ More The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2. △ Less

Submitted 3 February, 2003; originally announced February 2003.

Comments: 11 pages, 3 figures

Thermochemistry of MgB2 Thin Film Synthesis

Authors: Jihoon Kim, Rakesh K. Singh, Nathan Newman, John M. Rowell

Abstract: We have investigated the thermodynamic and kinetic barriers involved in the synthesis of MgB2 films. This work refines our initial conjectures predicting optimal MgB2 thin film growth conditions as a consequence of the unusually large kinetic barrier to MgB2 decomposition. The small Mg sticking coefficient at temperatures greater than 300C prevents high temperature synthesis with traditional vac… ▽ More We have investigated the thermodynamic and kinetic barriers involved in the synthesis of MgB2 films. This work refines our initial conjectures predicting optimal MgB2 thin film growth conditions as a consequence of the unusually large kinetic barrier to MgB2 decomposition. The small Mg sticking coefficient at temperatures greater than 300C prevents high temperature synthesis with traditional vacuum growth methods. However, as a result of the large kinetic barrier to MgB2 decomposition, in-situ thermal processing can be used to enhance the crystallinity and the superconductivity of MgB2 films. We used these methods to produce MgB2 thin films with relatively high transition temperatures (37K) by pulsed laser deposition (PLD). △ Less

Submitted 26 August, 2002; originally announced August 2002.

Comments: 11 pages, 6 figures, ASC2002

The Reactivity of MgB2 with Common Substrate and Electronic Materials

Authors: T. He, John M. Rowell, R. J. Cava

Abstract: The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 C and 800 C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia (YSZ), MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 C, MgB2 reacted only with S… ▽ More The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 C and 800 C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia (YSZ), MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 C, MgB2 reacted only with SiO2 and Si. At 800 C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3. △ Less

Submitted 20 September, 2001; originally announced September 2001.

Comments: 5 figures

Low Temperature Fabrication of MgB2

Authors: N. Rogado, M. A. Hayward, K. A. Regan, Yayu Wang, N. P. Ong, John M. Rowell, R. J. Cava

Abstract: We report the fabrication of MgB2 with bulk superconducting properties by conventional solid state methods at temperatures as low as 550 C. Mg deficiencies of the type Mg1-xB2 were tested. Tc was found to decrease by about 1K at large x, though the amount of non-stoichiometry, if any, is likely to be very small. For specific processing conditions, indications of the 25-30 K transition often seen… ▽ More We report the fabrication of MgB2 with bulk superconducting properties by conventional solid state methods at temperatures as low as 550 C. Mg deficiencies of the type Mg1-xB2 were tested. Tc was found to decrease by about 1K at large x, though the amount of non-stoichiometry, if any, is likely to be very small. For specific processing conditions, indications of the 25-30 K transition often seen in thin films were seen in the bulk materials. The lower temperature transition may be associated with the grain boundaries. These results indicate that it should be possible to fabricate MgB2 with bulk properties in in-situ thin films at temperatures of 600 C or less. △ Less

Submitted 25 July, 2001; originally announced July 2001.

Comments: 3 pages, 5 figures (submitted to Journal of Applied Physics)

Experimental study of MgB2 decomposition

Authors: Z. Y. Fan, D. G. Hinks, N. Newman, J. M. Rowell

Abstract: The thermal stability of MgB2 has been studied experimentally to determine the role of thermodynamic and kinetic barriers in the decomposition process. The MgB2 decomposition rate approaches one monolayer per second at 650 C and has an activation energy of 2.0 eV. The evaporation coefficient is inferred to be ~ 10(-4), indicating that this process is kinetically limited. These values were inferr… ▽ More The thermal stability of MgB2 has been studied experimentally to determine the role of thermodynamic and kinetic barriers in the decomposition process. The MgB2 decomposition rate approaches one monolayer per second at 650 C and has an activation energy of 2.0 eV. The evaporation coefficient is inferred to be ~ 10(-4), indicating that this process is kinetically limited. These values were inferred from in-situ measurements using a quartz crystal microbalance and a residual gas analyzer, in conjunction with ex-situ measurements of re-deposited material by Rutherford Backscattering Spectroscopy. The presence of a large kinetic barrier to decomposition indicates that the synthesis of MgB2 thin films conditions may be possible with vacuum processing, albeit within a narrow window in the reactive growth conditions. △ Less

Submitted 25 March, 2001; v1 submitted 21 March, 2001; originally announced March 2001.

Comments: 1 figure. Submitted to Applied Physics Letter (03/20/01)