Showing 1–50 of 52 results for author: Rowe, A

DART: Implicit Doppler Tomography for Radar Novel View Synthesis

Authors: Tianshu Huang, John Miller, Akarsh Prabhakara, Tao **, Tarana Laroia, Zico Kolter, Anthony Rowe

Abstract: Simulation is an invaluable tool for radio-frequency system designers that enables rapid prototy** of various algorithms for imaging, target detection, classification, and tracking. However, simulating realistic radar scans is a challenging task that requires an accurate model of the scene, radio frequency material properties, and a corresponding radar synthesis function. Rather than specifying… ▽ More Simulation is an invaluable tool for radio-frequency system designers that enables rapid prototy** of various algorithms for imaging, target detection, classification, and tracking. However, simulating realistic radar scans is a challenging task that requires an accurate model of the scene, radio frequency material properties, and a corresponding radar synthesis function. Rather than specifying these models explicitly, we propose DART - Doppler Aided Radar Tomography, a Neural Radiance Field-inspired method which uses radar-specific physics to create a reflectance and transmittance-based rendering pipeline for range-Doppler images. We then evaluate DART by constructing a custom data collection platform and collecting a novel radar dataset together with accurate position and instantaneous velocity measurements from lidar-based localization. In comparison to state-of-the-art baselines, DART synthesizes superior radar range-Doppler images from novel views across all datasets and additionally can be used to generate high quality tomographic images. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Comments: To appear in CVPR 2024; see https://wiselabcmu.github.io/dart/ for our project site

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence

Authors: Anis Chiout, Agnès Tempez, Thomas Carlier, Marc Chaigneau, Fabian Cadiz, Alistair Rowe, Biyuan Zheng, Anlian Pan, Marco Pala, Fabrice Oehler, Abdelkarim Ouerghi, Julien Chaste

Abstract: Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended… ▽ More Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Stop Hiding The Sharp Knives: The WebAssembly Linux Interface

Authors: Arjun Ramesh, Tianshu Huang, Ben L. Titzer, Anthony Rowe

Abstract: WebAssembly is gaining popularity as a portable binary format targetable from many programming languages. With a well-specified low-level virtual instruction set, minimal memory footprint and many high-performance implementations, it has been successfully adopted for lightweight in-process memory sandboxing in many contexts. Despite these advantages, WebAssembly lacks many standard system interfac… ▽ More WebAssembly is gaining popularity as a portable binary format targetable from many programming languages. With a well-specified low-level virtual instruction set, minimal memory footprint and many high-performance implementations, it has been successfully adopted for lightweight in-process memory sandboxing in many contexts. Despite these advantages, WebAssembly lacks many standard system interfaces, making it difficult to reuse existing applications. This paper proposes WALI: The WebAssembly Linux Interface, a thin layer over Linux's userspace system calls, creating a new class of virtualization where WebAssembly seamlessly interacts with native processes and the underlying operating system. By virtualizing the lowest level of userspace, WALI offers application portability with little effort and reuses existing compiler backends. With WebAssembly's control flow integrity guarantees, these modules gain an additional level of protection against remote code injection attacks. Furthermore, capability-based APIs can themselves be virtualized and implemented in terms of WALI, improving reuse and robustness through better layering. We present an implementation of WALI in a modern WebAssembly engine and evaluate its performance on a number of applications which we can now compile with mostly trivial effort. △ Less

Submitted 6 December, 2023; originally announced December 2023.

Comments: 12 pages, 8 figures

PIII Project Overview and Status

Authors: R. Stanek, C. Boffo, S. Chandrasekaran, S. Dixon, E. Harms, L. Kokoska, I. Kourbanis, J. Leibfritz, O. Napoly, D. Passarelli, E. Pozdeyev, A. Rowe

Abstract: The Proton Improvement Plan II (PIP-II) project is an essential upgrade to Fermilab's particle accelerator complex to enable the world's most intense neutrino beam for LBNF/DUNE and a broad particle physics program for many decades to come. PIP-II will deliver 1.2 MW of proton beam power from the Main Injector, upgradeable to multi-MW capability. The central element of PIP-II is an 800 MeV superco… ▽ More The Proton Improvement Plan II (PIP-II) project is an essential upgrade to Fermilab's particle accelerator complex to enable the world's most intense neutrino beam for LBNF/DUNE and a broad particle physics program for many decades to come. PIP-II will deliver 1.2 MW of proton beam power from the Main Injector, upgradeable to multi-MW capability. The central element of PIP-II is an 800 MeV superconducting radio frequency (SRF) linac, which comprises a room temperature front end followed by an SRF section. The SRF section consists of five different flavors of cavities/cryomodules, including Half Wave Resonators (HWR), Single Spoke and elliptical resonators operating at, or above, state-of-the-art parameters. The first two PIP-II cryomodules, Half Wave Resonator (HWR) and Single Spoke Resonator 1 (SSR1) were installed in the PIP-II Injector Test facility (PIP2IT) and have accelerated beam to above 17 MeV. PIP-II is the first U.S. accelerator project that will be constructed with significant contributions from international partners, including India, Italy, France, United Kingdom and Poland. The project was baselined in April 2022, and the construction phase is underway. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 21st Intl Conf Radio Frequency Superconductivity (SRF 2023)

Report number: FERMILAB-CONF-23-331-PIP2

Deep-level structure of the spin-active recombination center in dilute nitrides

Authors: A. C. Ulibarri, C. T. K. Lew, S. Q. Lim, J. C. McCallum, B. C. Johnson, J. C. Harmand, J. Peretti, A. C. H. Rowe

Abstract: A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap el… ▽ More A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment. △ Less

Submitted 1 December, 2023; v1 submitted 27 October, 2023; originally announced October 2023.

Comments: 6 pages, 5 figures plus Supplementary Material

Journal ref: Physical Review Letters 132, 186402 (2024)

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Authors: A. C. Ulibarri, R. Kothari, A. Garcia, J. C. Harmand, S. Park, F. Cadiz, J. Peretti, A. C. H. Rowe

Abstract: A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra… ▽ More A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $μ$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 11 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 2022

Journal ref: Physica Status Solidi (b) 260, 2200361 (2023)

Nanoscale map** of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces

Authors: Natalia Alyabyeva, Jacques Ding, Mylène Sauty, Judith Woerle, Yann Jousseaume, Gabriel Ferro, Jeffrey C. McCallum, Jacques Peretti, Brett C. Johnson, Alistair C. H. Rowe

Abstract: Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps fo… ▽ More Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps formed by the termination of these planes. The rather striking topography of this surface is well resolved with large tip biases of the order of -8 V and set currents of magnitude less than 1 nA. Hysteresis in the STS spectra is preferentially observed on the risers suggesting that they contain a higher density of surface charge traps than the terraces where hysteresis is more frequently absent. Similarly, at 50 K intense sub-gap light emission centered around 2.4 eV is observed mainly on the risers albeit only with larger tunneling currents of magnitude equal to or greater than 10 nA. These results demonstrate that STLM holds great promise for the observation of impurities and defects responsible for sub-gap light emission with spatial resolutions approaching the length scale of the defects themselves. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 13 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 2022

Journal ref: Physica Status Solidi (b) 260, 2200356 (2023)

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Authors: Mylène Sauty, Natalia Alyabyeva, Cheyenne Lynsky, Yi Chao Chow, Shuji Nakamura, James S. Speck, Yves Lassailly, Alistair C. H. Rowe, Claude Weisbuch, Jacques Peretti

Abstract: Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~10 nm and to correlate them with the surface topography imaged by scanning tunneling microscopy. A 500 nm x 500 nm area around a 150-nm large and 2.5-… ▽ More Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~10 nm and to correlate them with the surface topography imaged by scanning tunneling microscopy. A 500 nm x 500 nm area around a 150-nm large and 2.5-nm deep hexagonal defect is probed, revealing emission at higher energies close to the defect edges, a feature which is not visible in the macro-photoluminescence spectrum of the sample. Via a fitting of the local tunneling electroluminescence spectra, quantitative information on the fluctuations of the intensity, energy, width and phonon replica intensity of the different spectral contributions are obtained, revealing information about carrier localization in the quantum well. This procedure also indicates that carrier diffusion length on the probed part of the quantum well is approximately 40 nm. △ Less

Submitted 7 December, 2022; v1 submitted 17 August, 2022; originally announced August 2022.

Journal ref: Physica Status Solidi (b) 260, 2200365 (2023)

High Resolution Point Clouds from mmWave Radar

Authors: Akarsh Prabhakara, Tao **, Arnav Das, Gantavya Bhatt, Lilly Kumari, Elahe Soltanaghaei, Jeff Bilmes, Swarun Kumar, Anthony Rowe

Abstract: This paper explores a machine learning approach for generating high resolution point clouds from a single-chip mmWave radar. Unlike lidar and vision-based systems, mmWave radar can operate in harsh environments and see through occlusions like smoke, fog, and dust. Unfortunately, current mmWave processing techniques offer poor spatial resolution compared to lidar point clouds. This paper presents R… ▽ More This paper explores a machine learning approach for generating high resolution point clouds from a single-chip mmWave radar. Unlike lidar and vision-based systems, mmWave radar can operate in harsh environments and see through occlusions like smoke, fog, and dust. Unfortunately, current mmWave processing techniques offer poor spatial resolution compared to lidar point clouds. This paper presents RadarHD, an end-to-end neural network that constructs lidar-like point clouds from low resolution radar input. Enhancing radar images is challenging due to the presence of specular and spurious reflections. Radar data also doesn't map well to traditional image processing techniques due to the signal's sinc-like spreading pattern. We overcome these challenges by training RadarHD on a large volume of raw I/Q radar data paired with lidar point clouds across diverse indoor settings. Our experiments show the ability to generate rich point clouds even in scenes unobserved during training and in the presence of heavy smoke occlusion. Further, RadarHD's point clouds are high-quality enough to work with existing lidar odometry and map** workflows. △ Less

Submitted 16 July, 2023; v1 submitted 18 June, 2022; originally announced June 2022.

Journal ref: 2023 IEEE International Conference on Robotics and Automation (ICRA), London, United Kingdom, 2023, pp. 4135-4142

Quantum Extremal Learning

Authors: Savvas Varsamopoulos, Evan Philip, Herman W. T. van Vlijmen, Sairam Menon, Ann Vos, Natalia Dyubankova, Bert Torfs, Anthony Rowe, Vincent E. Elfving

Abstract: We propose a quantum algorithm for `extremal learning', which is the process of finding the input to a hidden function that extremizes the function output, without having direct access to the hidden function, given only partial input-output (training) data. The algorithm, called quantum extremal learning (QEL), consists of a parametric quantum circuit that is variationally trained to model data in… ▽ More We propose a quantum algorithm for `extremal learning', which is the process of finding the input to a hidden function that extremizes the function output, without having direct access to the hidden function, given only partial input-output (training) data. The algorithm, called quantum extremal learning (QEL), consists of a parametric quantum circuit that is variationally trained to model data input-output relationships and where a trainable quantum feature map, that encodes the input data, is analytically differentiated in order to find the coordinate that extremizes the model. This enables the combination of established quantum machine learning modelling with established quantum optimization, on a single circuit/quantum computer. We have tested our algorithm on a range of classical datasets based on either discrete or continuous input variables, both of which are compatible with the algorithm. In case of discrete variables, we test our algorithm on synthetic problems formulated based on Max-Cut problem generators and also considering higher order correlations in the input-output relationships. In case of the continuous variables, we test our algorithm on synthetic datasets in 1D and simple ordinary differential functions. We find that the algorithm is able to successfully find the extremal value of such problems, even when the training dataset is sparse or a small fraction of the input configuration space. We additionally show how the algorithm can be used for much more general cases of higher dimensionality, complex differential equations, and with full flexibility in the choice of both modeling and optimization ansatz. We envision that due to its general framework and simple construction, the QEL algorithm will be able to solve a wide variety of applications in different fields, opening up areas of further research. △ Less

Submitted 5 May, 2022; originally announced May 2022.

Comments: 21 pages, 14 figures, initial version

Anomalous ambipolar transport in depleted GaAs nanowires

Authors: H. Hijazi, D. Paget, A C. H. Rowe, G. Monier, K. Lahlil, E. Gil, A. Trassoudaine, F. Cadiz, Y. André, C. Robert-Goumet

Abstract: We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ do** level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature.… ▽ More We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ do** level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature. Using a self-consistent calculation based on the drift-diffusion and Poisson equations as well as on photocarrier statistics (Van Roosbroeck model), it is found that this tail is due to photocarrier drift in an internal electric field nearly two orders of magnitude larger than electric fields predicted by the usual ambipolar model. This large electric field appears because of two effects. Firstly, for transport in the spatial fluctuations of the conduction band minimum and valence band maximum, the electron mobility is activated by the internal electric field. This implies, in a counter intuitive way, that the spatial fluctuations favor long distance transport. Secondly, the range of carrier transport is further increased because of the finite NW length, an effect which plays a key role in one-dimensional systems. △ Less

Submitted 21 December, 2021; originally announced December 2021.

Multi-User Augmented Reality with Infrastructure-free Collaborative Localization

Authors: John Miller, Elahe Soltanaghai, Raewyn Duvall, Jeff Chen, Vikram Bhat, Nuno Pereira, Anthony Rowe

Abstract: Multi-user augmented reality (AR) could someday empower first responders with the ability to see team members around corners and through walls. For this vision of people tracking in dynamic environments to be practical, we need a relative localization system that is nearly instantly available across wide-areas without any existing infrastructure or manual setup. In this paper, we present LocAR, an… ▽ More Multi-user augmented reality (AR) could someday empower first responders with the ability to see team members around corners and through walls. For this vision of people tracking in dynamic environments to be practical, we need a relative localization system that is nearly instantly available across wide-areas without any existing infrastructure or manual setup. In this paper, we present LocAR, an infrastructure-free 6-degrees-of-freedom (6DoF) localization system for AR applications that uses motion estimates and range measurements between users to establish an accurate relative coordinate system. We show that not only is it possible to perform collaborative localization without infrastructure or global coordinates, but that our approach provides nearly the same level of accuracy as fixed infrastructure approaches for AR teaming applications. LocAR uses visual-inertial odometry (VIO) in conjunction with ultra-wideband (UWB) ranging radios to estimate the relative position of each device in an ad-hoc manner. The system leverages a collaborative 6DoF particle filtering formulation that operates on sporadic messages exchanged between nearby users. Unlike map or landmark sharing approaches, this allows for collaborative AR sessions even if users do not overlap the same spaces. LocAR consists of an open-source UWB firmware and reference mobile phone application that can display the location of team members in real-time using mobile AR. We evaluate LocAR across multiple buildings under a wide-variety of conditions including a contiguous 30,000 square foot region spanning multiple floors and find that it achieves median geometric error in 3D of less than 1 meter between five users freely walking across 3 floors. △ Less

Submitted 30 October, 2021; originally announced November 2021.

Maximum Likelihood Spectrum Decomposition for Isotope Identification and Quantification

Authors: J. T. Matta, A. J. Rowe, M. P. Dion, M. J. Willis, A. D. Nicholson, D. E. Archer, H. H. Wightman

Abstract: A spectral decomposition method has been implemented to identify and quantify isotopic source terms in high-resolution gamma-ray spectroscopy in static geometry and shielding scenarios. Monte-Carlo simulations were used to build the response matrix of a shielded high purity germanium detector monitoring an effluent stream with a Marinelli configuration. The decomposition technique was applied to a… ▽ More A spectral decomposition method has been implemented to identify and quantify isotopic source terms in high-resolution gamma-ray spectroscopy in static geometry and shielding scenarios. Monte-Carlo simulations were used to build the response matrix of a shielded high purity germanium detector monitoring an effluent stream with a Marinelli configuration. The decomposition technique was applied to a series of calibration spectra taken with the detector using a multi-nuclide standard. These results are compared to decay corrected values from the calibration certificate. For most nuclei in the standard ($^{241}$Am, $^{109}$Cd, $^{137}$Cs, and $^{60}$Co) the deviations from the certificate values were generally no more than $6$\% with a few outliers as high as $10$\%. For $^{57}$Co, the radionuclide with the lowest activity, the deviations from the standard reached as high as $25$\%, driven by the meager statistics in the calibration spectra. Additionally, a complete treatment of error propagation for the technique is presented. △ Less

Submitted 16 March, 2022; v1 submitted 21 July, 2021; originally announced July 2021.

Comments: Soon to be published in: IEEE Transactions on Nuclear Science

A Hybrid mmWave and Camera System for Long-Range Depth Imaging

Authors: Akarsh Prabhakara, Diana Zhang, Chao Li, Sirajum Munir, Aswin Sankanaryanan, Anthony Rowe, Swarun Kumar

Abstract: mmWave radars offer excellent depth resolution even at very long ranges owing to their high bandwidth. But their angular resolution is at least an order-of-magnitude worse than camera and lidar systems. Hence, mmWave radar is not a capable 3-D imaging solution in isolation. We propose Metamoran, a system that combines the complimentary strengths of radar and camera to obtain accurate, high resolut… ▽ More mmWave radars offer excellent depth resolution even at very long ranges owing to their high bandwidth. But their angular resolution is at least an order-of-magnitude worse than camera and lidar systems. Hence, mmWave radar is not a capable 3-D imaging solution in isolation. We propose Metamoran, a system that combines the complimentary strengths of radar and camera to obtain accurate, high resolution depth images over long ranges even in high clutter environments, all from a single fixed vantage point. Metamoran enables rich long-range depth imaging with applications in security and surveillance, roadside safety infrastructure and wide-area map**. Our approach leverages the high angular resolution from cameras using computer vision techniques, including image segmentation and monocular depth estimation, to obtain object shape. Our core contribution is a method to convert this object shape into an RF I/Q equivalent, which we use in a novel radar processing pipeline to help declutter the scene and capture extremely weak reflections from objects at long distances. We perform a detailed evaluation of Metamoran's depth imaging capabilities in 400 diverse scenes. Our evaluation shows that Metamoran estimates the depth of static objects up to 90 m and moving objects up to 305 m and with a median error of 28 cm, an improvement of 13$\times$ compared to a naive radar+camera baseline and 23$\times$ compared to monocular depth estimation. △ Less

Submitted 24 February, 2022; v1 submitted 14 June, 2021; originally announced June 2021.

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers

Authors: Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie, Fabian Cadiz

Abstract: Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops… ▽ More Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Journal ref: 2D Mater. 8 045014 (2021)

Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers

Authors: Cedric Robert, Sangjun Park, Fabian Cadiz, Laurent Lombez, Lei Ren, Hans Tornatzky, Alistair Rowe, Daniel Paget, Fausto Sirotti, Min Yang, Dinh Van Tuan, Takashi Taniguchi, Bernhard Urbaszek, Kenji Watanabe, Thierry Amand, Hanan Dery, Xavier Marie

Abstract: Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola… ▽ More Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Piezoresistance in defect-engineered silicon

Authors: H. Li, A. Thayil, C. T. K. Lew, M. Filoche, B. C. Johnson, J. C. McCallum, S. Arscott, A. C. H. Rowe

Abstract: The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa… ▽ More The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $\approx 30$~$μ$V/MPa, yields $π\approx -25 \times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR. △ Less

Submitted 1 January, 2021; v1 submitted 11 August, 2020; originally announced August 2020.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Applied 15, 014046 (2021)

Data-driven Thermal Model Inference with ARMAX, in Smart Environments, based on Normalized Mutual Information

Authors: Zhanhong Jiang, Jonathan Francis, Anit Kumar Sahu, Sirajum Munir, Charles Shelton, Anthony Rowe, Mario Bergés

Abstract: Understanding the models that characterize the thermal dynamics in a smart building is important for the comfort of its occupants and for its energy optimization. A significant amount of research has attempted to utilize thermodynamics (physical) models for smart building control, but these approaches remain challenging due to the stochastic nature of the intermittent environmental disturbances. T… ▽ More Understanding the models that characterize the thermal dynamics in a smart building is important for the comfort of its occupants and for its energy optimization. A significant amount of research has attempted to utilize thermodynamics (physical) models for smart building control, but these approaches remain challenging due to the stochastic nature of the intermittent environmental disturbances. This paper presents a novel data-driven approach for indoor thermal model inference, which combines an Autoregressive Moving Average with eXogenous inputs model (ARMAX) with a Normalized Mutual Information scheme (NMI). Based on this information-theoretic method, NMI, causal dependencies between the indoor temperature and exogenous inputs are explicitly obtained as a guideline for the ARMAX model to find the dominating inputs. For validation, we use three datasets based on building energy systems-against which we compare our method to an autoregressive model with exogenous inputs (ARX), a regularized ARMAX model, and state-space models. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Journal ref: American Control Conference (2018) 4634-4639

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Authors: H. Li, L. Martinelli, F. Cadiz, A. Bendounan, S. Arscott, F. Sirotti, A. C. H. Rowe

Abstract: A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are rel… ▽ More A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) map** on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are relevant to the electronic properties of strain-silicon nano-devices with large surface-to-volume ratios such as nanowires and nanomembranes. The surface Fermi level pinning is found to be even in applied stress, a fact that may be related to the symmetry of the Pb$_0$ silicon/oxide interface defects. For stresses up to 160 MPa, an increase in the pinning energy of 0.16 meV/MPa is observed for compressive stress, while for tensile stress it increases by 0.11 meV/MPa. Using the bulk, valence band deformation potentials the reduction in surface band bending in compression (0.09 meV/MPa) and in tension (0.13 meV/MPa) can be estimated. △ Less

Submitted 4 February, 2019; v1 submitted 26 October, 2018; originally announced October 2018.

Comments: 5 pages, 5 figures plus Supplementary Material

Journal ref: Applied Surface Science 478, 284-289 (2019)

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

Authors: F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek, X. Marie

Abstract: We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a… ▽ More We have combined spatially-resolved steady-state micro-photoluminescence ($μ$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we extract an exciton diffusion length $L_X= 0.36\pm 0.02 \; μ$m and an exciton diffusion coefficient of $D_X=14.5 \pm 2\;\mbox{cm}^2$/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species : bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of $L_{X^D}=1.5\pm 0.02 \;μ$m. △ Less

Submitted 26 February, 2018; originally announced February 2018.

Giant, anomalous piezo-impedance of silicon-on-insulator

Authors: Heng Li, Christopher Tao-Kuan Lew, Brett Johnson, Jeffrey McCallum, Steve Arscott, Alistair Rowe

Abstract: A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $ω$, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are $π_R = -1100 \times 10^{-11}$ Pa$^{-1}$ and $π_C = -900 \times 10^{-11}$ Pa… ▽ More A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $ω$, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are $π_R = -1100 \times 10^{-11}$ Pa$^{-1}$ and $π_C = -900 \times 10^{-11}$ Pa$^{-1}$ respectively. These values should be compared with the usual bulk PZR in p-type silicon, $π_R= 70 \times 10^{-11}$ Pa$^{-1}$. The observations are well described using models of space charge limited electron and hole currents in the presence of fast electronic traps having stress-dependent capture ($ω_c$) and emission rates. Under steady-state conditions (i.e. when $ω\ll ω_c$) where the impedance spectroscopy measurements yield results that are directly comparable with previously published reports of PZR in depleted, silicon nano-objects, the overall piezo-response is just the usual, bulk silicon PZR. Anomalous PZR is observed only under non-steady-state conditions when $ω\approx ω_c$, with a symmetry suggesting that the electro-mechanically active fast traps are native Pb$_0$ interface defects. The observations suggest new functionalities for FD-SOI, and shed light on the debate over the PZR of carrier depleted nano-silicon. △ Less

Submitted 29 November, 2018; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 14 pages with 10 figures including appendices

Journal ref: Phys. Rev. Applied 11, 044010 (2019)

The kinematics of σ-drop bulges from spectral synthesis modelling of a hydrodynamical simulation

Authors: Elisa Portaluri, Victor P. Debattista, Maximillian Fabricius, David R. Cole, Enrico M. Corsini, Niv Drory, Andrew Rowe, Lorenzo Morelli, Alessandro Pizzella, Elena Dalla Bonta'

Abstract: A minimum in stellar velocity dispersion is often observed in the central regions of disc galaxies. To investigate the origin of this feature, known as a σ-drop, we analyse the stellar kinematics of a high-resolution N-body + smooth particle hydrodynamical simulation, which models the secular evolution of an unbarred disc galaxy. We compared the intrinsic mass-weighted kinematics to the recovered… ▽ More A minimum in stellar velocity dispersion is often observed in the central regions of disc galaxies. To investigate the origin of this feature, known as a σ-drop, we analyse the stellar kinematics of a high-resolution N-body + smooth particle hydrodynamical simulation, which models the secular evolution of an unbarred disc galaxy. We compared the intrinsic mass-weighted kinematics to the recovered luminosity-weighted ones. The latter were obtained by analysing synthetic spectra produced by a new code, SYNTRA, that generates synthetic spectra by assigning a stellar population synthesis model to each star particle based on its age and metallicity. The kinematics were derived from the synthetic spectra as in real spectra to mimic the kinematic analysis of real galaxies. We found that the recovered luminosity-weighted kinematics in the centre of the simulated galaxy are biased to higher rotation velocities and lower velocity dispersions due to the presence of young stars in a thin and kinematically cool disc, and are ultimately responsible for the σ-drop. △ Less

Submitted 7 February, 2017; originally announced February 2017.

Comments: 9 pages, 7 figures, published on MNRAS

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

Authors: F. Cadiz, D. Lagarde, P. Renucci, D. Paget, T. Amand, H. Carrère, A. C. H. Rowe, S. Arscott

Abstract: Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (… ▽ More Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Comments: 4 pages, 5 figures

Luminescence imaging of photoelectron spin precession during drift in p-type GaAs

Authors: V. Notot, D. Paget, A. C. H. Rowe, L. Martinelli, F. Cadiz, S. Arscott

Abstract: Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to the precession of drifting spin-polarized photoelec- trons. Observation of these oscillations as a function of electric field E gives a direct measurement of t… ▽ More Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to the precession of drifting spin-polarized photoelec- trons. Observation of these oscillations as a function of electric field E gives a direct measurement of the minority carrier drift mobility and reveals that, for E = 800 V/cm, spin coherence is preserved over a length as large as 25μm. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Polarizers, optical bridges and Sagnac interferometers for nanoradian polarization rotation measurements

Authors: Alistair Rowe, Indira Zhaksylykova, Guillaume Dilasser, Yves Lassailly, Jacques Peretti

Abstract: The ability to measure nanoradian polarization rotations, $θ_F$, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer and an optical bridge, each of which can in principal be used in this limit with near equivalent figures-of-merit (FOM). In practice a bridge to PCP/Sagnac source noise rejection ratio of $1/4θ_F^2$ enables the bridge… ▽ More The ability to measure nanoradian polarization rotations, $θ_F$, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer and an optical bridge, each of which can in principal be used in this limit with near equivalent figures-of-merit (FOM). In practice a bridge to PCP/Sagnac source noise rejection ratio of $1/4θ_F^2$ enables the bridge to operate in the photon shot noise limit even at high light intensities. The superior performance of the bridge is illustrated via the measurement of a 3 nrad rotation arising from an axial magnetic field of 0.9 nT applied to a terbium gallium garnet. While the Sagnac is functionally equivalent to the PCP in terms of the FOM, unlike the PCP it is able to discriminate between rotations with different time ($T$) and parity ($P$) symmetries. The Sagnac geometry implemented here is similar to that used elsewhere to detect non-reciprocal ($\overline{T}P$) rotations like those due to the Faraday effect. Using a Jones matrix approach, novel Sagnac geometries uniquely sensitive to non-reciprocal $\overline{TP}$ (e.g. magneto-electric or magneto-chiral) rotations, as well as to reciprocal rotations (e.g. due to linear birefringence, $TP$, or to chirality, $T\overline{P}$) are proposed. △ Less

Submitted 26 April, 2017; v1 submitted 7 October, 2016; originally announced October 2016.

Comments: 12 pages, 7 figures

Journal ref: Review of Scientific Instruments 88, 043903 (2017)

Geometric and chemical components of the giant piezoresistance in silicon nanowires

Authors: M. McClarty, N. Jegenyes, M. Gaudet, C. Toccafondi, R. Ossikovski, F. Vaurette, S. Arscott, A. C. H. Rowe

Abstract: A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentrati… ▽ More A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentration, electrostatic field effects, or surface chemistry. Here we observe all these PZR behaviors in a single set of nominally p-type, $\langle 110 \rangle$ oriented, top-down SiNWs at uniaxial tensile stresses up to 0.5 MPa. Longitudinal $π$-coefficients varying from $-800\times10^{-11}$ Pa$^{-1}$ to $3000\times10^{-11}$ Pa$^{-1}$ are measured. Micro-Raman spectroscopy on chemically treated nanowires reveals that stress concentration is the principal source of giant PZR. The sign and an excess PZR similar in magnitude to the bulk effect are related to the chemical treatment of the SiNW. △ Less

Submitted 15 July, 2016; v1 submitted 4 December, 2015; originally announced December 2015.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 109, 023102 (2016)

Tracking Motion and Proxemics using Thermal-sensor Array

Authors: Chandrayee Basu, Anthony Rowe

Abstract: Indoor tracking has all-pervasive applications beyond mere surveillance, for example in education, health monitoring, marketing, energy management and so on. Image and video based tracking systems are intrusive. Thermal array sensors on the other hand can provide coarse-grained tracking while preserving privacy of the subjects. The goal of the project is to facilitate motion detection and group pr… ▽ More Indoor tracking has all-pervasive applications beyond mere surveillance, for example in education, health monitoring, marketing, energy management and so on. Image and video based tracking systems are intrusive. Thermal array sensors on the other hand can provide coarse-grained tracking while preserving privacy of the subjects. The goal of the project is to facilitate motion detection and group proxemics modeling using an 8 x 8 infrared sensor array. Each of the 8 x 8 pixels is a temperature reading in Fahrenheit. We refer to each 8 x 8 matrix as a scene. We collected approximately 902 scenes with different configurations of human groups and different walking directions. We infer direction of motion of a subject across a set of scenes as left-to-right, right-to-left, up-to-down and down-to-up using cross-correlation analysis. We used features from connected component analysis of each background subtracted scene and performed Support Vector Machine classification to estimate number of instances of human subjects in the scene. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 6 pages, 6 figures, Machine Learning for Signal Processing Class project

Ambipolar spin-spin coupling in p$^+$-GaAs

Authors: F. Cadiz, D. Paget, A. C. H. Rowe, S. Arscott

Abstract: A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffu… ▽ More A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the differential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffusion. Experimentally, the coupling is studied in $p^+$ GaAs using polarized microluminescence. The coupling manifests itself as an excitation power dependent reduction in the spin polarization at the excitation spot \textit{without} any change of the spatially averaged spin polarization. △ Less

Submitted 13 July, 2015; originally announced July 2015.

Anomalous temperature dependence of photoelectron charge and spin mobilities in p+-GaAs

Authors: F. Cadiz, D. Paget, A. C. H. Rowe, E. Peytavit, S. Arscott

Abstract: The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibit the well known increase as the temperature is lowered. It is shown that this is related mainly to the electron statistics rather than the majority h… ▽ More The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibit the well known increase as the temperature is lowered. It is shown that this is related mainly to the electron statistics rather than the majority hole statistics. This finding suggests that current theoretical models based on degeneracy of majority carriers cannot fully explain the observed temperature dependence of minority carrier mobility. △ Less

Submitted 28 January, 2015; originally announced June 2015.

Comments: see attached film, which shows the evolution of the luminescence image as a function of electric field

VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy

Authors: Yamina Andre, Kaddour Lekhal, Philip Hoggan, Geoffrey Avit, Fabian Cadiz, Alistair Rowe, Daniel Paget, Elodie Petit, Christine Leroux, Agnes Trassoudaine, Reda Ramdani, Guillaume Monier, David Colas, Rabih Ajib, Dominique Castelluci, Evelyne Gil

Abstract: High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of in… ▽ More High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron microscopy (HRTEM) and micro-Raman spectroscopy revealed polytypism-free zinc blende NWs over lengths of several tens of micrometers for diameters ranging between 50 and 150 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors of which high decomposition frequency, after adsorption onto the catalyst particle, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the catalyst liquid droplet. This yields high axial growth rate (more than 100 micron/h) of NWs. The fast diffusion of the Ga atoms in the droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3x10-9 m2/s, which matches the experimental observations. △ Less

Submitted 30 January, 2014; v1 submitted 17 October, 2013; originally announced October 2013.

Comments: This paper has been withdrawn by the author due to several corrections, including new calculation results and update experimentle calculations

The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas

Authors: F. Cadiz, D. Paget, A. C. H. Rowe

Abstract: Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, images of the polarized photo-luminescence reveal a spin-filter effect in which the spin polarization increases during transport over the first 2 microns f… ▽ More Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, images of the polarized photo-luminescence reveal a spin-filter effect in which the spin polarization increases during transport over the first 2 microns from 26 % to 38 %. This is shown to be a direct consequence of the Pauli Principle and the associated quantum degeneracy pressure which results in a spin-dependent increase in the minority carrier diffusion constants and mobilities. The central role played by the quantum degeneracy pressure is confirmed via the observation of a spin-dependent increase in the photo-electron volume and a spin-charge coupling description of this is presented. △ Less

Submitted 25 September, 2013; originally announced September 2013.

Journal ref: Phys. Rev. Lett. 111, 246601 (2013)

Piezoresistance in Silicon and its nanostructures

Authors: A. C. H. Rowe

Abstract: Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in bulk, crystalline materials like Silicon, is principally a change in the electronic structure which leads to a modification of the charge carriers effective mass. The last few years have seen a rising interest in the piez… ▽ More Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in bulk, crystalline materials like Silicon, is principally a change in the electronic structure which leads to a modification of the charge carriers effective mass. The last few years have seen a rising interest in the piezoresistive properties of semiconductor nanostructures, motivated in large part by claims of a giant piezoresistance effect in Silicon nanowires that is more than two orders of magnitude bigger than the known bulk effect. This review aims to present the controversy surrounding claims and counter-claims of giant piezoresistance in Silicon nanostructures by presenting a summary of the major works carried out over the last 10 years. The main conclusions that can be drawn from the literature are that i) reproducible evidence for a giant piezoresistance effect in un-gated Silicon nanowires is limited, ii) in gated nanowires a giant effect has been reproduced by several authors, iii) the giant effect is fundamentally different from either the bulk Silicon piezoresistance or that due to quantum confinement in accumulation layers and heterostructures, the evidence pointing to an electrostatic origin for the piezoresistance, iv) released nanowires tend to have slightly larger piezoresistance coefficients than un-released nanowires, and v) insufficient work has been performed on bottom-up grown nanowires to be able to rule out a fundamental difference in their properties when compared with top-down nanowires. On the basis of this, future possible research directions are suggested. △ Less

Submitted 1 April, 2014; v1 submitted 25 September, 2013; originally announced September 2013.

Comments: 41 pages, 4 figures

Journal ref: Journal of Materials Research 29, 731 (2014)

Effect of the Pauli principle on photoelectron spin transport in $p^+$ GaAs

Authors: F. Cadiz, D. Paget, A. C. H. Rowe, T. Amand, P. Barate, S. Arscott

Abstract: In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maxim… ▽ More In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about $2 \; μm$ from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas. △ Less

Submitted 12 March, 2015; v1 submitted 5 July, 2013; originally announced July 2013.

Nitrogen and argon do** of niobium for superconducting radio frequency cavities: a pathway to highly efficient accelerating structures

Authors: A. Grassellino, A. Romanenko, O. Melnychuk, Y. Trenikhina, A. Crawford, A. Rowe, M. Wong, D. Sergatskov, T. Khabiboulline, F. Barkov

Abstract: We report a surface treatment that systematically improves the quality factor of niobium radio frequency cavities beyond the expected limit for niobium. A combination of annealing in a partial pressure of nitrogen or argon gas and subsequent electropolishing of the niobium cavity surface leads to unprecedented low values of the microwave surface resistance, and an improvement in the efficiency of… ▽ More We report a surface treatment that systematically improves the quality factor of niobium radio frequency cavities beyond the expected limit for niobium. A combination of annealing in a partial pressure of nitrogen or argon gas and subsequent electropolishing of the niobium cavity surface leads to unprecedented low values of the microwave surface resistance, and an improvement in the efficiency of the accelerating structures up to a factor of 3, reducing the cryogenic load of superconducting cavities for both pulsed and continuous duty cycles. The field dependence of the surface resistance is reversed compared to standardly treated niobium. △ Less

Submitted 24 June, 2013; v1 submitted 2 June, 2013; originally announced June 2013.

Fermilab experience of post-annealing losses in SRF niobium cavities due to furnace contamination and the ways to its mitigation: a pathway to processing simplification and quality factor improvement

Authors: A. Grassellino, A. Romanenko, A. Crawford, O. Melnychuk, A. Rowe, M. Wong, C. Cooper, D. Sergatskov, D. Bice, Y. Trenikhina, L. D. Cooley, C. Ginsburg, R. D. Kephart

Abstract: We investigate the effect of high temperature treatments followed by only high-pressure water rinse (HPR) of superconducting radio frequency (SRF) niobium cavities. The objective is to provide a cost effective alternative to the typical cavity processing sequence, by eliminating the material removal step post furnace treatment while preserving or improving the RF performance. The studies have been… ▽ More We investigate the effect of high temperature treatments followed by only high-pressure water rinse (HPR) of superconducting radio frequency (SRF) niobium cavities. The objective is to provide a cost effective alternative to the typical cavity processing sequence, by eliminating the material removal step post furnace treatment while preserving or improving the RF performance. The studies have been conducted in the temperature range 800-1000C for different conditions of the starting substrate: large grain and fine grain, electro-polished (EP) and centrifugal barrel polished (CBP) to mirror finish. An interesting effect of the grain size on the performances is found. Cavity results and samples characterization show that furnace contaminants cause poor cavity performance, and a practical solution is found to prevent surface contamination. Extraordinary values of residual resistances ~ 1 nOhm and below are then consistently achieved for the contamination-free cavities. These results lead to a more cost-effective processing and improved RF performance, and, in conjunction with CBP, open a potential pathway to acid-free processing. △ Less

Submitted 16 May, 2013; v1 submitted 9 May, 2013; originally announced May 2013.

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

Authors: F. Cadiz, D. Paget, V. L. Berkovits, V. P. Ulin, S. Arscott, E. Peytavit, A. C. H. Rowe

Abstract: A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model.… ▽ More A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk do** level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power. △ Less

Submitted 13 February, 2013; originally announced February 2013.

Comments: 10 pages, 7 figures

Journal ref: J. Appl. Phys. 114, 103711 (2013)

High Gradient Tests of the Fermilab SSR1 Cavity

Authors: T. Khabiboulline, C. M. Ginsburg, I. Gonin, R. Madrak, O. Melnychuk, J. Ozelis, Y. Pischalnikov, L. Ristori, A. Rowe, D. A. Sergatskov, A. Sukhanov, I. Terechkine, R. Wagner, R. Webber, V. Yakovlev

Abstract: In Fermilab we are build and tested several superconducting Single Spoke Resonators (SSR1, β=0.22) which can be used for acceleration of low beta ions. Fist two cavities performed very well during cold test in Vertical Test Station at FNAL. One dressed cavity was also tested successfully in Horizontal Test Station. Currently we are building 8 cavity cryomodule for PIXIE project. Additional 10 cavi… ▽ More In Fermilab we are build and tested several superconducting Single Spoke Resonators (SSR1, β=0.22) which can be used for acceleration of low beta ions. Fist two cavities performed very well during cold test in Vertical Test Station at FNAL. One dressed cavity was also tested successfully in Horizontal Test Station. Currently we are building 8 cavity cryomodule for PIXIE project. Additional 10 cavities were manufactured in the industry and on-going cold test results will be presented in this poster. △ Less

Submitted 23 January, 2013; originally announced January 2013.

Comments: 3 pp. 3rd International Particle Accelerator Conference (IPAC 2012) 20-25 May 2012, New Orleans, Louisiana

Report number: FERMILAB-CONF-12-183-AD-TD

Imaging ambipolar diffusion of photocarriers in GaAs thin films

Authors: Daniel Paget, Fabian Cadiz, Alistair Rowe, Francois Moreau, Steve Arscott, Emilien Peytavit

Abstract: Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffu… ▽ More Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffusion. The results are in agreement with a numerical solution of the diffusion equations and with a physical analysis of the luminescence intensity at the centre of the image, which permits the determination of the ambipolar diffusion constant as a function of electron concentration. △ Less

Submitted 12 January, 2012; originally announced January 2012.

Comments: 5 figures

Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa

Authors: J. S. Milne, I. Favorskiy, A. C. H. Rowe, S. Arscott, Ch. Renner

Abstract: The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicte… ▽ More The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $\approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using \textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies. △ Less

Submitted 25 September, 2012; v1 submitted 12 November, 2010; originally announced November 2010.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 108, 256801(2012)

On giant piezoresistance effects in silicon nanowires and microwires

Authors: J. S. Milne, S. Arscott, C. Renner, A. C. H. Rowe

Abstract: The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trap** at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported el… ▽ More The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to electron and hole trap** at the sample surfaces. Importantly, this time varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon. △ Less

Submitted 8 October, 2010; originally announced October 2010.

Journal ref: Physical Review Letters 105, 226802 (2010)

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

Authors: D. Vu, H. F. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. C. H. Rowe, D. Paget, S. Arscott, E. Peytavit

Abstract: The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polariz… ▽ More The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%. △ Less

Submitted 16 August, 2010; v1 submitted 8 August, 2010; originally announced August 2010.

Journal ref: Phys. Rev. B 83, 121304(R) (2011)

Imaging charge and spin diffusion of minority carriers in GaAs

Authors: I. Favorskiy, D. Vu, E. Peytavit, S. Arscott, D. Paget, A. C. H. Rowe

Abstract: Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a contactless means to measure charge (L) and spin (L_s) diffusion lengths. The measured values of L and L_s are in excellent agreement with the spatially averag… ▽ More Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a contactless means to measure charge (L) and spin (L_s) diffusion lengths. The measured values of L and L_s are in excellent agreement with the spatially averaged polarization and a sharp reduction in these two quantities (L from 21.3 mum to 1.2 mum and L_s from 1.3 mum to 0.8 mum) is measured with increasing surface recombination. Outwards diffusion results in a factor of 10 increase in the polarization at the excitation spot. △ Less

Submitted 6 July, 2010; originally announced July 2010.

Comments: 13 pages, 3 figures

Journal ref: Rev. Sci. Instr. 81, 103902 (2010)

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

Authors: D. Vu, S. Arscott, E. Peytavit, R. Ramdani, E. Gil, Y. André, S. Bansropun, B. Gérard, A. C. H. Rowe, D. Paget

Abstract: The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombin… ▽ More The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombination velocity. It is found that i) the tunnel photocurrent from the conduction band dominates that from surface states. ii) At large tunnel distance the exponential bias dependence of the current is explained by that of the tunnel barrier height, while at small distance the change of surface recombination velocity is dominant. △ Less

Submitted 15 June, 2010; originally announced June 2010.

GaAs(111)A and B in hydrazine sulfide solutions : extreme polarity dependence of surface adsorption processes

Authors: V. L. Berkovits, V. P. Ulin, O. E. Tereshchenko, D. Paget, A. C. H. Rowe, P. Chiaradia, B. P. Doyle, S. Nannarone

Abstract: Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface pol… ▽ More Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga- adsorption sites, which have distinct configurations on the A and B surfaces. △ Less

Submitted 21 July, 2009; originally announced July 2009.

Giant room temperature piezoresistance in a metal/silicon hybrid

Authors: A. C. H. Rowe, A. Donoso-Barrera, Ch. Renner, S. Arscott

Abstract: Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This… ▽ More Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid. △ Less

Submitted 5 March, 2008; originally announced March 2008.

Comments: 4 pages, 4 figures, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 100, 145501 (2008)

Geometrical dependence of decoherence by electronic interactions in a GaAs/GaAlAs square network

Authors: M. Ferrier, A. C. H. Rowe, S. Gueron, H. Bouchiat, C. Texier, G. Montambaux

Abstract: We investigate weak localization in metallic networks etched in a two dimensional electron gas between $25\:$mK and $750\:$mK when electron-electron (e-e) interaction is the dominant phase breaking mechanism. We show that, at the highest temperatures, the contributions arising from trajectories that wind around the rings and trajectories that do not are governed by two different length scales. T… ▽ More We investigate weak localization in metallic networks etched in a two dimensional electron gas between $25\:$mK and $750\:$mK when electron-electron (e-e) interaction is the dominant phase breaking mechanism. We show that, at the highest temperatures, the contributions arising from trajectories that wind around the rings and trajectories that do not are governed by two different length scales. This is achieved by analyzing separately the envelope and the oscillating part of the magnetoconductance. For $T\gtrsim0.3\:$K we find $\Lphi^\mathrm{env}\propto{T}^{-1/3}$ for the envelope, and $\Lphi^\mathrm{osc}\propto{T}^{-1/2}$ for the oscillations, in agreement with the prediction for a single ring \cite{LudMir04,TexMon05}. This is the first experimental confirmation of the geometry dependence of decoherence due to e-e interaction. △ Less

Submitted 9 April, 2008; v1 submitted 26 July, 2007; originally announced July 2007.

Comments: LaTeX, 5 pages, 4 eps figures

Journal ref: Phys. Rev. Lett. 100, 146802 (2008)

Fowler-Nordheim-like local injection of photoelectrons from a silicon tip

Authors: A. C. H. Rowe, D. Paget

Abstract: Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the measurements are carried out under nitrogen gas at room temperature. It is found that while tunneling of valence band electrons is described by a standard proces… ▽ More Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the measurements are carried out under nitrogen gas at room temperature. It is found that while tunneling of valence band electrons is described by a standard process between the semiconductor valence band and the metal, the tunneling of photoelectrons obeys a Fowler-Nordheim-like process directly from the conduction band. In the latter case, the bias dependence of the photocurrent as a function of distance is in agreement with theoretical predictions which include image charge effects. Quantitative analysis of the bias dependence of the dark and photocurrent spectra gives reasonable values for the distance, and for the tip and metal work functions. For small distances image charge effects induce a vanishing of the barrier and the bias dependence of the photocurrent is exponential. In common with many works on field emission, fluctuations in the tunneling currents are observed. These are mainly attributed to changes in the prefactor for the tunneling photocurrent, which we suggest is caused by an electric-field-induced modification of the thickness of the natural oxide layer covering the tip apex. △ Less

Submitted 21 December, 2006; v1 submitted 29 November, 2006; originally announced November 2006.

Comments: 12 pages, 11 figures. Submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 75, 115311 (2007)

Direct measurement of the phase coherence length in a GaAs/GaAlAs square network

Authors: Meydi Ferrier, Lionel Angers, Sophie Gueron, Helene Bouchiat, Christophe Texier, Gilles Montambaux, Dominique Mailly, Alistair C. H. Rowe

Abstract: The low temperature magnetoconductance of a large array of quantum coherentloops exhibits Altshuler-Aronov-Spivak oscillations which periodicitycorresponds to 1/2 flux quantum per loop.We show that the measurement of the harmonics content in a square networkprovides an accurate way to determine the electron phase coherence length$L\_φ$ in units of the lattice length without any adjustableparamet… ▽ More The low temperature magnetoconductance of a large array of quantum coherentloops exhibits Altshuler-Aronov-Spivak oscillations which periodicitycorresponds to 1/2 flux quantum per loop.We show that the measurement of the harmonics content in a square networkprovides an accurate way to determine the electron phase coherence length$L\_φ$ in units of the lattice length without any adjustableparameters.We use this method to determine $L\_φ$ in a network realised from a 2Delectron gas (2DEG) in a GaAS/GaAlAs heterojunction. The temperaturedependence follows a power law $T^{-1/3}$ from 1.3 K to 25 mK with nosaturation, as expected for 1D diffusive electronic motion andelectron-electron scattering as the main decoherence mechanism. △ Less

Submitted 15 February, 2005; v1 submitted 20 February, 2004; originally announced February 2004.

Comments: Additional experimental data in version 2

Journal ref: Physical Review Letters 93 (2004) 246804

Transport of Quantum States and Separation of Ions in a Dual RF Ion Trap

Authors: M. A. Rowe, A. Ben-Kish, B. DeMarco, D. Leibfried, V. Meyer, J. Beall, J. Britton, J. Hughes, W. M. Itano, B. Jelenkovic, C. Langer, T. Rosenband, D. J. Wineland

Abstract: We have investigated ion dynamics associated with a dual linear ion trap where ions can be stored in and moved between two distinct locations. Such a trap is a building block for a system to engineer arbitrary quantum states of ion ensembles. Specifically, this trap is the unit cell in a strategy for scalable quantum computing using a series of interconnected ion traps. We have transferred an io… ▽ More We have investigated ion dynamics associated with a dual linear ion trap where ions can be stored in and moved between two distinct locations. Such a trap is a building block for a system to engineer arbitrary quantum states of ion ensembles. Specifically, this trap is the unit cell in a strategy for scalable quantum computing using a series of interconnected ion traps. We have transferred an ion between trap locations 1.2 mm apart in 50 $μ$s with near unit efficiency ($> 10^{6}$ consecutive transfers) and negligible motional heating, while maintaining internal-state coherence. In addition, we have separated two ions held in a common trap into two distinct traps. △ Less

Submitted 15 May, 2002; originally announced May 2002.

Comments: 15 pages, 5 figures

Recent Results in Trapped-Ion Quantum Computing

Authors: D. Kielpinski, A. Ben-Kish, J. Britton, V. Meyer, M. A. Rowe, C. A. Sackett, W. M. Itano, C. Monroe, D. J. Wineland

Abstract: We review recent experiments on entanglement, Bell's inequality, and decoherence-free subspaces in a quantum register of trapped \be ions. We have demonstrated entanglement of up to four ions using the technique of Mølmer and Sørensen. This method produces the state |down down> + |up up> for two ions and the state |down down down down> + |up up up up> for four ions. We generate the entanglement… ▽ More We review recent experiments on entanglement, Bell's inequality, and decoherence-free subspaces in a quantum register of trapped \be ions. We have demonstrated entanglement of up to four ions using the technique of Mølmer and Sørensen. This method produces the state |down down> + |up up> for two ions and the state |down down down down> + |up up up up> for four ions. We generate the entanglement deterministically in each shot of the experiment. Measurements on the two-ion entangled state violates Bell's inequality at the $8σ$ level. Because of the high detector efficiency of our apparatus, this experiment closes the detector loophole for Bell's inequality measurements for the first time. This measurement is also the first violation of Bell's inequality by massive particles that does not implicitly assume results from quantum mechanics. Finally, we have demonstrated reversible encoding of an arbitrary qubit, originally contained in one ion, into a decoherence-free subspace (DFS) of two ions. The DFS-encoded qubit resists applied collective dephasing noise and retains coherence under ambient conditions 3.6 times longer than does an unencoded qubit. The encoding method, which uses single-ion gates and the two-ion entangling gate, demonstrates all the elements required for two-qubit universal quantum logic. △ Less

Submitted 16 February, 2001; originally announced February 2001.

Comments: 7 pages, 7 figures, proceedings for IQC01, Sydney, Australia