Showing 1–27 of 27 results for author: Roux, X L

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

Authors: Paula Nuño Ruano, Jianhao Zhang, Xavier Le Roux, David González-Andrade, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Norberto Daniel Lanzillotti-Kimura, Carlos Alonso-Ramos

Abstract: On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic al… ▽ More On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Spatial and polarization division multiplexing harnessing on-chip optical beam forming

Authors: David González-Andrade, Xavier Le Roux, Guy Aubin, Farah Amar, Thi Hao Nhi Nguyen, Paula Nuño Ruano, Thi Thuy Duong Dinh, Dorian Oser, Diego Pérez-Galacho, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Carlos Alonso-Ramos

Abstract: On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new a… ▽ More On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. To demonstrate the potential and versatility of this approach, we have developed a two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology. The two-polarization link shows a measured -35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a -20 dB crosstalk bandwidth of 195 nm. These bandwidths cover the S, C, L, and U communication bands. We used these links to demonstrate error-free transmission (bit-error-rate < 10-9) of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 dB and 1.5 dB for the two-polarization and three-mode links respectively. The approach demonstrated here for two polarizations and three modes is also applicable to future implementation of more complex multiplexing schemes. △ Less

Submitted 25 December, 2022; originally announced December 2022.

Broadband behavior of quadratic metalenses with a wide field of view

Authors: Yang Liu, Jianhao Zhang, Xavier Le Roux, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Carlos Alonso-Ramos, Daniele Melati

Abstract: Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view b… ▽ More Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands. △ Less

Submitted 8 June, 2022; originally announced June 2022.

Surface acoustic wave lasing in a silicon optomechanical cavity

Authors: J. Zhang, P. Nuño-Ruano, X. Le Roux, M. Montesinos-Ballester, D. Marris-Morini, E. Cassan, L. Vivien, N. D. Lanzillotti-Kimura, C. Alonso-Ramos

Abstract: Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with extern… ▽ More Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with external devices, limiting the potential for the implementation of complex circuits. Here, we propose and demonstrate a new approach for optomechanical cavities coupling free-propagating surface acoustic waves (SAWs) and guided optical modes. The cavity is formed by a periodic array of silicon nanopillars with subwavelength separation, implemented in silicon-on-insulator substrate. Optical pum** yields a strong radiation pressure that drives the harmonic vibration of the pillars, periodically deforming the silica under-cladding and exciting the SAW. The propagation of the SAW deforms the cavity period, modulating the resonance wavelength to close the optomechanical coupling loop. Based on this concept, we experimentally demonstrate a phonon laser at room temperature and ambient conditions with optical pump power as low as 1 mW. We also show the possibility to cascade this process, achieving a frequency comb generation with more than 30 harmonic lines. These results open a new path to achieve strong bidirectional coupling between integrated waveguides and SAW, with a great potential for a wide range of applications in quantum and classical domains. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Dispersive wave control enabled by silicon metamaterial waveguides

Authors: T. T. D. Dinh, X. Le Roux, M. Montesinos-Ballester, C. Lafforgue, J. Zhang, D. González-Andrade, D. Melati, D. Bouville, D. Benedikovic, P. Cheben, E. Cassan, D. Marris-Morini, L. Vivien, C. Alonso-Ramos

Abstract: The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dis… ▽ More The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dispersive waves in integrated waveguides remains an open challenge, hampering versatile sha** of the nonlinear spectral response. Here, we show that metamaterial silicon waveguides release new degrees of freedom to select the wavelength of dispersive waves. Based on this concept, we experimentally demonstrate excitation of two dispersive waves near 1.55 μm and 7.5 μm allowing ultra-wideband supercontinuum generation, covering most of the silicon transparency window. These results stand as an important milestone for versatile nonlinear frequency generation in silicon chips, with a great potential for applications in sensing, metrology and communications. △ Less

Submitted 17 January, 2022; originally announced January 2022.

Mid-infrared Fourier-transform spectrometer based on metamaterial lateral cladding suspended silicon waveguides

Authors: Thi Thuy Duong Dinh, Xavier Le Roux, Natnicha Koompai, Daniele Melati, Miguel Montesinos-Ballester, David González-Andrade, Pavel Cheben, Aitor V. Velasco, Eric Cassan, Delphine Marris-Morini, Laurent Vivien, Carlos Alonso-Ramos

Abstract: Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the stron… ▽ More Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 μm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating near 5.5μm wavelength. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm between 5.3μm and 5.7μm wavelengths. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 μm, achieving a measured spectral resolution of 13cm-1 and a free-spectral range of 100 cm-1 near 5.5μm wavelength. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Sha** the modal confinement in silicon nanophotonic waveguides through dual-metamaterial engineering

Authors: T. T. D. Dinh, X. Le Roux, J. Zhang, M. Montesinos-Ballester, C. Lafforgue, D. Benedikovic, P. Cheben, E. Cassan, D. Marris-Morini, L. Vivien, C Alonso-Ramos

Abstract: Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness,… ▽ More Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the index contrast in the vertical and horizontal directions, independently. The proposed dual-material geometry yields a substantially increased calculated overlap with the air (0.35) compared to the best-case scenario for a strip waveguide (0.3). To experimentally demonstrate the potential of this approach, we have implemented dual-metamaterial ring resonators, operating with the transverse-magnetic polarized mode in 220-nm-thick waveguides with air as upper-cladding. Micro-ring resonators implemented with strip and dual-metamaterial waveguides exhibit the same measured quality factors, near 30,000. Having similar measured quality factors and better calculated external confinement factors than strip waveguides, the proposed dual-metamaterial geometry stands as a promising approach to control modal confinement in silicon waveguides. △ Less

Submitted 31 May, 2021; originally announced May 2021.

Universal coupler for bulk whispering gallery mode resonators based on silicon subwavelength grating waveguides

Authors: D. Farnesi, S. Pelli, S. Soria, G. Nunzi Conti, X. Le Roux, M. Montesinos Ballester, L. Vivien, P. Cheben, C. Alonso-Ramos

Abstract: Optical microresonators are of paramount importance in photonic circuits requiring fine spectral filtering or resonant light recirculation. Key performance metrics improve with increasing resonance quality factor (Q) across all applications. The performance of silicon photonic circuits is often hampered by the low-quality factor of planar silicon microresonators, typically of Q~10^4-10^5. On the o… ▽ More Optical microresonators are of paramount importance in photonic circuits requiring fine spectral filtering or resonant light recirculation. Key performance metrics improve with increasing resonance quality factor (Q) across all applications. The performance of silicon photonic circuits is often hampered by the low-quality factor of planar silicon microresonators, typically of Q~10^4-10^5. On the other hand, bulk whispering gallery mode resonators provide a wide range of materials with intriguing optical properties and exceptionally high resonant quality factors Q>10^7. However, the efficient coupling between bulk resonators and planar Si photonic waveguides is considered challenging, if not impossible, due to remarkably large mismatch in size and refractive index. Here, we show an efficient method to couple bulk resonators and Si waveguides based on subwavelength metamaterial engineering of silicon. Based on this approach, we experimentally demonstrate coupling between 220-nm-thick Si waveguides and bulk microresonators made of silica, lithium niobate and calcium fluoride with diameters in the 0.3-3.5 mm range, achieving high coupling efficiency of 75-99% and exceptional Q of 10^6-10^7. These results open a new route for the heterogeneous integration of bulk resonators and silicon photonic circuits, with great potential for applications in sensing, microwave-photonics, and quantum photonics, to name a few. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Generating 10-GHz phonons in nanostructured silicon membrane optomechanical cavity

Authors: Jianhao Zhang, Xavier Le Roux, Miguel Montesinos-Ballester, Omar Ortiz, Delphine Marris-Morini, Eric Cassan, Laurent Vivien, Norberto Daniel Lanzillotti-Kimura, Carlos Alonso-Ramos

Abstract: Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedesta… ▽ More Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedestal or silicon membrane waveguides. Remarkable optomechanical interactions have been demonstrated in silicon using pedestal strips, membrane ribs, and photonic/phononic crystal membrane waveguides. Still, the mechanical frequencies are limited to the 1-5 GHz range. Here, we exploit the periodic nanostructuration in Si membrane gratings to shape GHz phononic modes and near-infrared photonic modes, achieving ultrahigh mechanical frequency (10 GHz) and strong photon-phonon overlap (61.5%) simultaneously. Based on this concept, we experimentally demonstrate a one-dimension optomechanical micro-resonator with a high mechanical frequency of 10 GHz and a quality factor of 1000. These results were obtained at room temperature and ambient conditions with an intracavity optical power below 1 mW, illustrating the efficient optical driving of the mechanical mode enabled by the proposed approach. △ Less

Submitted 26 March, 2021; originally announced March 2021.

Silicon-on-insulator optomechanical microresonator with tight photon and phonon confinement

Authors: Jianhao Zhang, Xavier Le Roux, Miguel Montesinos-Ballester, Omar Ortiz, Delphine Marris-Morini, Laurent Vivien, Norberto Daniel Lanzillotti-Kimura, Carlos Alonso-Ramos

Abstract: The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration w… ▽ More The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration with standard silicon optoelectronics circuitry, limiting the versatility and application of the strategy. Here, we propose and demonstrate a new strategy to confine photons and phonons in SOI without removing the silica under-cladding. Inspired by end-fire antenna arrays, we implement a periodic nanostructuration of silicon that simultaneously enables cancelling phonon leakage by destructive interference and guiding of photons by metamaterial index confinement. Based on this concept, we implement SOI optomechanical micro-resonators yielding remarkable optomechanical coupling (go=49 kHz) between 0.66 GHz mechanical modes and near-infrared optical modes. The mechanical mode exhibits a measured quality factor of Qm = 730, the largest reported for SOI optomechanical resonators, without silica removal. This value compares favorably with state-of-the-art Si membrane waveguides recently used to demonstrate remarkable Brillouin interactions in silicon (Qm ~ 700). These results open a new path for develo** optomechanics in SOI without the need for silica removal, allowing seamless co-integration with current Si optoelectronics circuits, with a great potential for applications in communications, sensing, metrology, and quantum technologies. △ Less

Submitted 16 March, 2021; v1 submitted 15 March, 2021; originally announced March 2021.

Stress measurements in silicon photonics by integrated Raman spectroscopy

Authors: Guillaume Marcaud, Mathias Berciano, Christian Lafforgue, Carlos Alonso-Ramos, Xavier Le Roux, Thomas Maroutian, Guillaume Agnus, Pascal Aubert, Ludovic Largeau, Eric Cassan, Sylvia Matzen, Delphine Marris-Morini, Philippe Lecoeur, Laurent Vivien

Abstract: Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds… ▽ More Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations. △ Less

Submitted 24 December, 2020; originally announced December 2020.

High-quality photonic entanglement based on a silicon chip

Authors: Dorian Oser, Sébastien Tanzilli, Florent Mazeas, Carlos Alonso-Ramos, Xavier Le Roux, Grégory Sauder, Xin Hua, Olivier Alibart, Laurent Vivien, Éric Cassan, Laurent Labonté

Abstract: The fruitful association of quantum and integrated photonics holds the promise to produce, manipulate, and detect quantum states of light using compact and scalable systems. Integrating all the building-blocks necessary to produce high-quality photonic entanglement in the telecom wavelength range out of a single chip remains a major challenge, mainly due to the limited performance of on-chip light… ▽ More The fruitful association of quantum and integrated photonics holds the promise to produce, manipulate, and detect quantum states of light using compact and scalable systems. Integrating all the building-blocks necessary to produce high-quality photonic entanglement in the telecom wavelength range out of a single chip remains a major challenge, mainly due to the limited performance of on-chip light rejection filters. We report a stand-alone, telecom-compliant, device that integrates, on a single substrate, a nonlinear photon-pair generator and a passive pump rejection filter. Using standard channel-grid fiber demultiplexers, we demonstrate the first entanglement quantification of such a integrated circuit, showing the highest raw quantum interference visibility for energy-time entangled photons over two telecom-wavelength bands. Genuinely pure maximally entangled states can therefore be generated thanks to the high-level of noise suppression obtained with the pump filter. These results will certainly further promote the development of more advanced and scalable photonic-integrated quantum systems compliant with telecommunication standards. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 11 pages, 6 figures

Journal ref: npj Quantum Inf. 6, 31 (2020)

Optical modulation in Ge-rich SiGe waveguides in the mid-IR wavelength range up to 11 um

Authors: Miguel Montesinos-Ballester, Vladyslav Vakarin, Joan Manel Ramirez, Qiankun Liu, Carlos Alonso-Ramos, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Lucas Deniel, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini

Abstract: Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report… ▽ More Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report for the first time the demonstration of optical modulation in mid-IR photonic circuit reaching wavelengths larger than 8 um. Moreover, optical modulation in an unprecedented wavelength range, from 5.5 to 11 um wavelength is shown, relying on a broadband Ge-rich graded-SiGe platform. This first demonstration is used as a proof of concept, to experimentally confirm the free-carrier absorption effect modeling. These results pave the way towards efficient high-performance electrically-driven integrated optical modulators in the mid-IR wavelength range. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Comments: 12 pages, 7 figures

Wideband tunable microwave signal generation in a silicon-based optoelectronic oscillator

Authors: Phuong T. Do, Carlos Alonso-Ramos, Xavier Le Roux, Isabelle Ledoux, Bernard Journet, Eric Cassan

Abstract: Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phas… ▽ More Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phase-modulation to intensity-modulation conversion, requiring precise control of the phase-modulation. Here, we propose a new approach enabling Si OEOs with wide tunability and direct intensity-modulation to microwave conversion. The microwave signal is created by the beating between an optical source and single sideband modulation signal, selected by an add-drop ring resonator working as an optical bandpass filter. The tunability is achieved by changing the wavelength spacing between the optical source and resonance peak of the resonator. Based on this concept, we experimentally demonstrate microwave signal generation between 6 GHz and 18 GHz, the widest range for a Si-based OEO. Moreover, preliminary results indicate that the proposed Si OEO provides precise refractive index monitoring, with a sensitivity of 94350 GHz RIU and a potential limit of detection of only 10-8 RIU, opening a new route for the implementation of high-performance Si photonic sensors. △ Less

Submitted 4 March, 2019; originally announced March 2019.

Polarization and wavelength agnostic nanophotonic beam splitter

Authors: David González-Andrade, Christian Lafforgue, Elena Durán-Valdeiglesias, Xavier Le Roux, Mathias Berciano, Eric Cassan, Delphine Marris-Morini, Aitor V. Velasco, Pavel Cheben, Laurent Vivien, Carlos Alonso-Ramos

Abstract: High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that… ▽ More High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that exploits modal engineering in slotted waveguides to overcome these limitations, enabling ultra-wideband polarization-insensitive optical power splitters, with relaxed fabrication tolerances. The proposed splitter relies on a single-mode slot waveguide which is transformed into two strip waveguides by a symmetric taper, yielding equal power splitting. Based on this concept, we experimentally demonstrate -3$\pm$0.5 dB polarization-independent transmission in an unprecedented 390 nm bandwidth (1260 - 1650 nm), even in the presence of waveguide width deviations as large as $\pm$25 nm. △ Less

Submitted 25 June, 2018; originally announced July 2018.

Generating Fano Resonances in a single-waveguide nanobeam cavity for efficient electro-optical modulation

Authors: Jianhao Zhang, Xavier Le Roux, Elena Ruran-Valdeiglesias, Carlos Alonso-Ramos, Delphine Marris-Morini, Laurent Vivien, Sailing He, Eric Cassan

Abstract: We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and ultra-fast electro-optical modulators.. Taking advantage from a spatial-division multiplexing principle of operation between transverse electric modes, a sharp resonant… ▽ More We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and ultra-fast electro-optical modulators.. Taking advantage from a spatial-division multiplexing principle of operation between transverse electric modes, a sharp resonant mode and an efficient flat background mode are simultaneously generated in the same silicon channel for the realization of efficient Fano resonances. Unambiguous asymmetric spectrum lineshapes are thoroughly investigated using numerical and analytical methods and experimentally demonstrated in the near infra-red around lambda=1.55μm, presenting an extinction ratio of about 17dB for a delta lambda =56 pm wavelength detuning for the 1st cavity mode (Q-factor Q=34000), and higher than 23 dB extinction ratio for a delta lambda=366 pm detuning for the 2nd cavity mode (Q=5600). These extinction ratios are 10~15 dB larger than their Lorentzian counterparts exhibiting similar Q factors. Silicon Fano modulation based on plasma dispersion effect is proposed, for which an energy consumption as low as few fJ/bit is estimated. Fano cavity scheme addressed in this paper presents a great potential for low power consumption silicon optical modulators and provides anew insight to the advantages of Fano resonances for optical modulation schemes. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Comments: 31 pages, 8 figures

Coherency-broken Bragg filters: surpassing on-chip rejection limitations

Authors: D. Oser, F. Mazeas, X. Le Roux, D. Perez-Galacho, O. Alibart, S. Tanzilli, L. Labonte, D. Marris-Morini, L. Vivien, E. Cassan, C. Alonso-Ramos

Abstract: Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filt… ▽ More Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filter response, whatever the chosen strategy (resonators, interferometers, Bragg filters, etc.). Here we propose and experimentally demonstrate a radically different approach to overcome this fundamental limitation, based on coherency-broken Bragg filters. We exploit non-coherent interaction among modal-engineered waveguide Bragg gratings separated by single-mode waveguides to yield effective cascading, even in the presence of fabrication errors. This technologically independent approach allows seamless combination of filter stages with moderate performance, providing a dramatic increase of on-chip rejection. Based on this concept, we experimentally demonstrate on-chip non-coherent cascading of Si Bragg filters with a record light rejection exceeding 80 dB in the C-band. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

Authors: Diego Pérez-Galacho, Carlos Alonso-Ramos, Florent Mazeas, Xavier Le Roux, Dorian Oser, Weiwei Zhang, Delphine Marris-Morini, Laurent Labonté, Sébastien Tanzilli, Éric Cassan, Laurent Vivien

Abstract: The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg… ▽ More The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, $\mathbf{220\,nm}$ thick, Si Bragg filter featuring a corrugation width of $\mathbf{150\,nm}$, a rejection bandwidth of $\mathbf{1.1\,nm}$ and an extinction ratio exceeding $\mathbf{40\,dB}$. This represents a ten-fold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Journal ref: Optics Letters, 2017, 42 (8), pp.1468-1471

Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation

Authors: Carlos Alonso-Ramos, Xavier Le Roux, Daniel Benedikovic, Vladyslav Vakarin, Elena Duran-Valdeiglesias, Diego Perez-Galacho, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Laurent Vivien

Abstract: The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors… ▽ More The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period waveguide Bragg grating yielding a sharp third-order Bragg resonance for the fundamental waveguide mode and radiating the higher order modes. We experimentally demonstrate a notch filter with a 4nm bandwidth and 40 dB extinction ratio with a temperature-dependent Bragg wavelength shift of 70pm/K. △ Less

Submitted 16 October, 2016; originally announced October 2016.

High-quality photonic entanglement for wavelength-multiplexed quantum communication based on a silicon chip

Authors: Florent Mazeas, Michele Traetta, Marco Bentivegna, Florian Kaiser, Djeylan Aktas, Weiwei Zhang, Carlos Alonso Ramos, Lutfi-Arif Bin-Ngah, Tommaso Lunghi, Éric Picholle, Nadia Belabas-Plougonven, Xavier Le Roux, Éric Cassan, Delphine Marris-Morini, Laurent Vivien, Grégory Sauder, Laurent Labonté, Sébastien Tanzilli

Abstract: We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400\,pairs of entangled photons /s/MHz for $\rm 500\,μW$ pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible w… ▽ More We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400\,pairs of entangled photons /s/MHz for $\rm 500\,μW$ pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities ($>$~98\%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems. △ Less

Submitted 8 February, 2017; v1 submitted 2 September, 2016; originally announced September 2016.

Journal ref: Opt. Express 51, 28731 (2016)

Electroabsorption study of index-defined semiconducting carbon nanotubes

Authors: Nicolas Izard, Etienne Gaufrès, Xavier Le Roux, Saïd Kazaoui, Yoichi Murakami, Delphine Marris-Morini, Eric Cassan, Shigeo Maruyama, Laurent Vivien

Abstract: Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show that at least for a limited range of diameters, electroabsorption is directly proportional to the exciton binding energy of nanotubes. Electroabsorption is a po… ▽ More Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show that at least for a limited range of diameters, electroabsorption is directly proportional to the exciton binding energy of nanotubes. Electroabsorption is a powerful technique which directly probes into carbon nanotube excitonic states, and may become a useful tool for in situ study of excitons in future nanotube-based photonic devices such as electroabsorption modulators. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Journal ref: Eur. Phys. J. Appl. Phys. 55, 20401 (2011)

Light Emission in Silicon from Carbon Nanotubes

Authors: Etienne Gaufrès, Nicolas Izard, Adrien Noury, Xavier Le Roux, Gilles Rasigade, Alexandre Beck, Laurent Vivien

Abstract: The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with s… ▽ More The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 μm. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Journal ref: ACS Nano, 2012, 6 (5), pp 3813-3819

Controlling carbon nanotube photoluminescence using silicon microring resonators

Authors: Adrien Noury, Xavier Le Roux, Laurent Vivien, Nicolas Izard

Abstract: We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 μm and 10 μm were used, reaching quality factors up to 4000 in emission.… ▽ More We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 μm and 10 μm were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrated cavity on silicon platform, which open up the possibility to build s-SWNT based efficient light source on silicon. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Journal ref: Nanotechnology 25 215201 (2014)

Enhanced light emission from Carbon Nanotubes integrated in silicon micro-resonator

Authors: Adrien Noury, Xavier Le Roux, Laurent Vivien, Nicolas Izard

Abstract: Single-wall carbon nanotube are considered a fascinating nanomaterial for photonic applications and are especially promising for efficient light emitter in the telecommunication wavelength range. Furthermore, their hybrid integration with silicon photonic structures makes them an ideal platform to explore the carbon nanotube instrinsic properties. Here we report on the strong photoluminescence enh… ▽ More Single-wall carbon nanotube are considered a fascinating nanomaterial for photonic applications and are especially promising for efficient light emitter in the telecommunication wavelength range. Furthermore, their hybrid integration with silicon photonic structures makes them an ideal platform to explore the carbon nanotube instrinsic properties. Here we report on the strong photoluminescence enhancement from carbon nanotubes integrated in silicon ring resonator circuit under two pum** configurations: surface-illuminated pum** at 735 nm and collinear pum** at 1.26 μm. Extremely efficient rejection of the non-resonant photoluminescence was obtained. In the collinear approach, an emission efficiency enhancement by a factor of 26 has been demonstrated in comparison with classical pum** scheme. This demonstration pave the way for the development of integrated light source in silicon based on carbon nanotubes. △ Less

Submitted 5 August, 2015; originally announced August 2015.

Journal ref: Nanotechnology 26 345201 (2015)

Optical Gain in Carbon Nanotubes

Authors: Etienne Gaufrès, Nicolas Izard, Xavier Le Roux, Delphine Marris-Morini, Saïd Kazaoui, Eric Cassan, Laurent Vivien

Abstract: Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical ga… ▽ More Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical gain as high as 190 cm-1 at a wavelength of 1.3 μm in a thin film doped with s-SWNT. These results constitute a significant milestone toward the development of laser sources based on carbon nanotubes for future high performance integrated circuits. △ Less

Submitted 28 November, 2010; originally announced November 2010.

Comments: 4 figures

Journal ref: Appl. Phys. Lett. 96, 231105 (2010)

Optical microcavity with semiconducting single-wall carbon nanotubes

Authors: Etienne Gaufrès, Nicolas Izard, Xavier Le Roux, Saïd Kazaoui, Delphine Marris-Morini, Eric Cassan, Laurent Vivien

Abstract: We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at… ▽ More We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 $μ$m. Such results prove the great potential of carbon nanotubes for photonic applications. △ Less

Submitted 25 October, 2010; originally announced October 2010.

Journal ref: Optics Express 18, 6 (2010) 5740-5745

Mems Q-Factor Enhancement Using Parametric Amplification: Theoretical Study and Design of a Parametric Device

Authors: L. Grasser, H. Mathias, F. Parrain, X. Le Roux, J. -P. Gilles

Abstract: Parametric amplification is an interesting way of artificially increasing a MEMS Quality factor and could be helpful in many kinds of applications. This paper presents a theoretical study of this principle, based on Matlab/Simulink simulations, and proposes design guidelines for parametric structures. A new device designed with this approach is presented together with the corresponding FEM simul… ▽ More Parametric amplification is an interesting way of artificially increasing a MEMS Quality factor and could be helpful in many kinds of applications. This paper presents a theoretical study of this principle, based on Matlab/Simulink simulations, and proposes design guidelines for parametric structures. A new device designed with this approach is presented together with the corresponding FEM simulation results. △ Less

Submitted 21 February, 2008; originally announced February 2008.

Comments: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)

Journal ref: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)