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Strong electrostatic control of excitonic features in MoS$_2$ by a free-standing ultrahigh-$κ$ ferroelectric perovskite
Authors:
Thomas Pucher,
Sergio Puebla,
Victor Zamora,
Estrella Sánchez Viso,
Victor Rouco,
Carlos Leon,
Mar Garcia-Hernandez,
Jacobo Santamaria,
Carmen Munuera,
Andres Castellanos-Gomez
Abstract:
We present the electrostatic control of photoluminescence of monolayer MoS$_2$ at room temperature via integration of free-standing BaTiO$_3$ (BTO), a ferroelectric perovskite oxide, layers. We show that the use of BTO leads to highly tunable exciton emission of MoS$_2$ in a minimal range of gate voltages, effectively controlling the neutral excitons to charged excitons (trions) conversion. Due to…
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We present the electrostatic control of photoluminescence of monolayer MoS$_2$ at room temperature via integration of free-standing BaTiO$_3$ (BTO), a ferroelectric perovskite oxide, layers. We show that the use of BTO leads to highly tunable exciton emission of MoS$_2$ in a minimal range of gate voltages, effectively controlling the neutral excitons to charged excitons (trions) conversion. Due to BTO's ferroelectric polarization-induced do** we observe large peak emission shifts as well as a large and tunable A trion binding energy in the range of 40-100 meV. To further investigate the efficacy of electrostatic control, we compared our measurements with those carried out when the BTO is replaced by a hexagonal boron nitride (hBN) dielectric layer of comparable thickness, confirming BTO's superior gating properties and thus lower power consumption. Additionally, we take advantage of the ferroelectric switching of BTO by fabricating devices where the BTO layer is decoupled from the gate electrode with a SiO$_2$ layer. Choosing to isolate the BTO allows us to induce large remanent behavior of MoS$_2$'s excitonic features, observing hysteretic behavior in the peak energy ratio between A exciton and its trion, as well as hysteretic behavior in the do**-related trion energy shift. This study illustrates the rich physics involved in combining free-standing complex oxide layers with two-dimensional materials.
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Submitted 9 May, 2024;
originally announced May 2024.
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Disentangling photodo**, photoconductivity, and photosuperconductivity in the cuprates
Authors:
R. El Hage,
D. Sánchez-Manzano,
V. Humbert,
S. J. Carreira,
V. Rouco,
A Sander,
F. Cuellar,
K. Seurre,
A. Lagarrigue,
J. Briatico,
J. Trastoy,
J. Santamaría,
Javier E. Villegas
Abstract:
The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa2Cu3O7-x can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects -- termed persistent photoconductivity (PPC) and photosuperconductivity (PPS) -- has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of h…
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The normal-state conductivity and superconducting critical temperature of oxygen-deficient YBa2Cu3O7-x can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects -- termed persistent photoconductivity (PPC) and photosuperconductivity (PPS) -- has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodo**) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodo** are completely disconnected and originate from different microscopic mechanisms since they present different wavelength and oxygen-content dependencies as well as strikingly different relaxation dynamics. Besides hel** disentangle photodo**, PPC, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.
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Submitted 4 October, 2023;
originally announced October 2023.
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Light induced decoupling of electronic and magnetic properties in manganites
Authors:
Henry Navarro,
Ali C. Basaran,
Fernando Ajejas,
Lorenzo Fratino,
Soumen Bag,
Tianxing D. Wang,
Erbin Qiu,
Victor Rouco,
Isabel Tenreiro,
Felipe Torres,
Alberto Rivera-Calzada,
Jacobo Santamaria,
Marcelo Rozenberg,
Ivan K. Schuller
Abstract:
The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical do**, temperature, or magnetic field, they often require large external stimuli. To include additional flexibility and tunability, we developed a hybrid optoelectronic heterostructure that…
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The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical do**, temperature, or magnetic field, they often require large external stimuli. To include additional flexibility and tunability, we developed a hybrid optoelectronic heterostructure that uses photocarrier injection from cadmium sulfide (CdS) to an LSMO layer to change its electrical conductivity. LSMO exhibits no significant optical response, however, the CdS/LSMO heterostructures show an enhanced conductivity, with ~ 37 % resistance drop, at the transition temperature under light stimuli. This enhanced conductivity in response to light is comparable to the effect of a 9 T magnetic field in pure LSMO. Surprisingly, the optical and magnetic responses of CdS/LSMO heterostructures are decoupled and exhibit different effects when both stimuli are applied. This unexpected behavior shows that heterostructuring strongly correlated oxides may require a new understanding of the coupling of physical properties across the transitions and provide the means to implement new functionalities.
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Submitted 29 March, 2023;
originally announced March 2023.
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A 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers
Authors:
Gabriel Sanchez-Santolino,
Victor. Rouco,
Sergio. Puebla,
Hugo Aramberri,
Victor Zamora,
Fabian A. Cuellar,
Carmen Munuera,
Federico Mompean,
Mar Garcia-Hernandez,
Aandres Castellanos-Gomez,
Jorge Iniguez,
Carlos Leon,
Jacobo Santamaria
Abstract:
The wealth of complex polar topologies recently found in nanoscale ferroelectrics result from a delicate balance between the materials intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary conditions imposed upon them. Ferroelectric dielectric interfaces are model systems where polarization curling originates from open circuit like electric boundary condit…
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The wealth of complex polar topologies recently found in nanoscale ferroelectrics result from a delicate balance between the materials intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary conditions imposed upon them. Ferroelectric dielectric interfaces are model systems where polarization curling originates from open circuit like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux closure domains that evolve into vortex like structures at the nanoscale. Interestingly, while ferroelectricity is known to couple strongly to strain (both homogeneous and inhomogeneous), the effect of mechanical constraints on thin film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles opens an unprecedented opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated to the twisting. Interestingly, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding opens exciting opportunities to create two-dimensional high density vortex crystals that would allow us to explore novel physical effects and functionalities.
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Submitted 11 January, 2023;
originally announced January 2023.
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Superconducting bimodal ionic photo-memristor
Authors:
Ralph El Hage,
Vincent Humbert,
Victor Rouco,
Anke Sander,
Jérôme Charliac,
Salvatore Mesoraca,
Juan Trastoy,
Javier Briatico,
Jacobo Santamaría,
Javier E. Villegas
Abstract:
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develop…
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Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to which they respond by varying their electrical resistance across a continuum of nonvolatile states. Recently, much effort has been devoted to develo** devices that present an analogous response to optical excitation. Here we realize a new class of device, a tunnelling photo-memristor, whose behaviour is bimodal: both electrical and optical stimuli can trigger the switching across resistance states in a way determined by the dual optical-electrical history. This unique behaviour is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The microscopic mechanism at play is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. Oxygen exchange is controlled here via illumination by exploiting a competition between electrochemistry, photovoltaic effects and photo-assisted ion migration. In addition to their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, beyond facilitating the high connectivity required in neuromorphic circuits, brings photo-memristive effects to the realm of superconducting electronics.
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Submitted 20 April, 2022;
originally announced April 2022.
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Spin pum** in d-wave superconductor/ferromagnet hybrids
Authors:
S. J. Carreira,
D. Sanchez-Manzano,
M. -W. Yoo,
V. Rouco,
A. Sander,
J. Santamaría,
A. Anane,
J. E. Villegas
Abstract:
Spin-pum** across ferromagnet/superconductor (F/S) interfaces has attracted much attention lately. Yet the focus has been mainly on s-wave superconductors-based systems whereas (high-temperature) d-wave superconductors such as YBa2Cu3O7-d (YBCO) have received scarce attention despite their fundamental and technological interest. Here we use wideband ferromagnetic resonance to study spin-pum**…
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Spin-pum** across ferromagnet/superconductor (F/S) interfaces has attracted much attention lately. Yet the focus has been mainly on s-wave superconductors-based systems whereas (high-temperature) d-wave superconductors such as YBa2Cu3O7-d (YBCO) have received scarce attention despite their fundamental and technological interest. Here we use wideband ferromagnetic resonance to study spin-pum** effects in bilayers that combine a soft metallic Ni80Fe20 (Py) ferromagnet and YBCO. We evaluate the spin conductance in YBCO by analyzing the magnetization dynamics in Py. We find that the Gilbert dam** exhibits a drastic drop as the heterostructures are cooled across the normal-superconducting transition and then, depending on the S/F interface morphology, either stays constant or shows a strong upturn. This unique behavior is explained considering quasiparticle density of states at the YBCO surface, and is a direct consequence of zero-gap nodes for particular directions in the momentum space. Besides showing the fingerprint of d-wave superconductivity in spin-pum**, our results demonstrate the potential of high-temperature superconductors for fine tuning of the magnetization dynamics in ferromagnets using k-space degrees of freedom of d-wave/F interfaces.
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Submitted 25 November, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Factors limiting ferroelectric field-effect do** in complex-oxide heterostructures
Authors:
L. Bégon-Lours,
V. Rouco,
Qiao Qiao,
A. Sander,
M. A. Roldán,
R. Bernard,
J. Trastoy,
A. Crassous,
E. Jacquet,
K. Bouzehouane,
M. Bibes,
J. Santamaría,
A. Barthélémy,
M. Varela,
Javier E. Villegas
Abstract:
Ferroelectric field-effect do** has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect do** is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission…
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Ferroelectric field-effect do** has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. However, this potential is not fully exploited so far, since the size of the field-effect do** is generally much smaller than expected. Here we study the limiting factors through magneto-transport, scanning transmission electron and piezo-response force microscopy in ferroelectric/superconductor (YBa2Cu3O7-δ /BiFeO3) heterostructures, a model system showing very strong field-effects. Still, we find that they are limited in the first place by an incomplete ferroelectric switching. This can be explained by the existence of a preferential polarization direction set by the atomic terminations at the interface. More importantly, we also find that the field-effect carrier do** is accompanied by a strong modulation of the carrier mobility. Besides making quantification of field-effects via Hall measurements not straightforward, this finding suggests that ferroelectric poling produces structural changes (e.g. charged defects or structural distortions) in the correlated oxide channel. Those findings have important consequences for the understanding of ferroelectric field-effects and for the strategies to further enhance them.
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Submitted 20 August, 2019;
originally announced August 2019.
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A high-temperature superconducting weak-link defined by ferroelectric field-effect
Authors:
L. Begon-Lours,
V. Rouco,
A. Sander,
J. Trastoy,
R. Bernard,
E. Jacquet,
K. Bouzehouane,
S. Fusil,
V. Garcia,
A. Barthelemy,
M. Bibes,
J. Santamaría,
J. E. Villegas
Abstract:
In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a…
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In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a local scale to define planar weak-links in high-temperature superconducting wires. This is realized in BiFeO3(FE)/YBa2Cu3O7(S)bilayers in which the remnant FE domain structure is written at will by locally applying voltage pulses with a conductive-tip atomic force microscope. In this fashion, the FE domain pattern defines a spatial modulation of superconductivity. This allows us to write a device whose electrical transport shows different temperature regimes and magnetic field matching effects that are characteristic of Josephson coupled weak-links. This illustrates the potential of the ferroelectric approach for the realization of high-temperature superconducting devices.
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Submitted 3 March, 2017;
originally announced March 2017.
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Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions
Authors:
D. Massarotti,
B. Jouault,
V. Rouco,
S. Charpentier,
T. Bauch,
A. Michon,
A. De Candia,
P. Lucignano,
F. Lombardi,
F. Tafuri,
A. Tagliacozzo
Abstract:
Superconducting hybrid junctions are revealing a variety of novel effects. Some of them are due to the special layout of these devices, which often use a coplanar configuration with relatively large barrier channels and the possibility of hosting Pearl vortices. A Josephson junction with a quasi ideal two-dimensional barrier has been realized by growing graphene on SiC with Al electrodes. Chemical…
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Superconducting hybrid junctions are revealing a variety of novel effects. Some of them are due to the special layout of these devices, which often use a coplanar configuration with relatively large barrier channels and the possibility of hosting Pearl vortices. A Josephson junction with a quasi ideal two-dimensional barrier has been realized by growing graphene on SiC with Al electrodes. Chemical Vapor Deposition offers centimeter size monolayer areas where it is possible to realize a comparative analysis of different devices with nominally the same barrier. In samples with a graphene gap below 400 nm, we have found evidence of Josephson coherence in presence of an incipient Berezinskii-Kosterlitz-Thouless transition. When the magnetic field is cycled, a remarkable hysteretic collapse and revival of the Josephson supercurrent occurs. Similar hysteresis are found in granular systems and are usually justified within the Bean Critical State model (CSM). We show that the CSM, with appropriate account for the low dimensional geometry, can partly explain the odd features measured in these junctions.
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Submitted 18 September, 2016;
originally announced September 2016.
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Unusual magneto-transport of YBa2Cu3O7-d films due to the interplay of anisotropy, random disorder and nanoscale periodic pinning
Authors:
J. Trastoy,
V. Rouco,
C. Ulysse,
R. Bernard,
A. Palau,
T. Puig,
G. Faini,
J. Lesueur,
J. Briatico,
J. E. Villegas
Abstract:
We study the general problem of a manifold of interacting elastic lines whose spatial correlations are strongly affected by the competition between random and ordered pinning. This is done through magneto-transport experiments with YBa2Cu3O7-d thin films that contain a periodic vortex pinning array created via masked ion irradiation, in addition to the native random pinning. The strong field-match…
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We study the general problem of a manifold of interacting elastic lines whose spatial correlations are strongly affected by the competition between random and ordered pinning. This is done through magneto-transport experiments with YBa2Cu3O7-d thin films that contain a periodic vortex pinning array created via masked ion irradiation, in addition to the native random pinning. The strong field-matching effects we observe suggest the prevalence of periodic pinning, and indicate that at the matching field each vortex line is bound to an artificial pinning site. However, the vortex-glass transition dimensionality, quasi-2D instead of the usual 3D, evidences reduced vortex-glass correlations along the vortex line. This is also supported by an unusual angular dependence of the magneto-resistance, which greatly differs from that of Bose-glass systems. A quantitative analysis of the angular magnetoresistance allows us to link this behaviour to the enhancement of the system anisotropy, a collateral effect of the ion irradiation.
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Submitted 23 October, 2013;
originally announced October 2013.