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Multidimensional imaging reveals mechanisms controlling label-free biosensing in vertical 2DM-heterostructures
Authors:
Tetyana Ignatova,
Sajedeh Pourianejad,
Xinyi Li,
Kirby Schmidt,
Frederick Aryeetey,
Shyam Aravamudhan,
Slava V. Rotkin
Abstract:
Two-dimensional materials and their van der Waals heterostructures enable a large range of applications, including label-free biosensing. Lattice mismatch and work function difference in the heterostructure material result in strain and charge transfer, often varying at nanometer scale, that influence device performance. In this work, a multidimensional optical imaging technique is developed in or…
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Two-dimensional materials and their van der Waals heterostructures enable a large range of applications, including label-free biosensing. Lattice mismatch and work function difference in the heterostructure material result in strain and charge transfer, often varying at nanometer scale, that influence device performance. In this work, a multidimensional optical imaging technique is developed in order to map sub-diffractional distributions for do** and strain and understand the role of those for modulation of electronic properties of the material. As an example, vertical heterostructure comprised of monolayer graphene and single layer flakes of transition metal dichalcogenide MoS$_2$ is fabricated and used for biosensing. Herein, an optical label-free detection of doxorubicin, a common cancer drug, is reported via three independent optical detection channels (photoluminescence shift, Raman shift and Graphene Enhanced Raman Scattering). Non-uniform broadening of components of multimodal signal correlates with the statistical distribution of local optical properties of the heterostructure. Multidimensional nanoscale imaging allows one to reveal the physical origin for such a local response and propose the best strategy for mitigation of materials variability and future device fabrication.
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Submitted 18 November, 2021;
originally announced November 2021.
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One-dimensional van der Waals heterojunction diode
Authors:
Ya Feng,
Henan Li,
Taiki Inoue,
Shohei Chiashi,
Slava V. Rotkin,
Rong Xiang,
Shigeo Maruyama
Abstract:
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural do** results in p-type electrical characte…
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The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural do** results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
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Submitted 5 December, 2020;
originally announced December 2020.
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Size quantization of Dirac fermions in graphene constrictions
Authors:
B. Terrés,
L. A. Chizhova,
F. Libisch,
J. Peiro,
D. Jörger,
S. Engels,
A. Girschik,
K. Watanabe,
T. Taniguchi,
S. V. Rotkin,
J. Burgdörfer,
C. Stampfer
Abstract:
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantiz…
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Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F \approx 1.5 \times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.
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Submitted 7 April, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Two-color spectroscopy of UV excited ssDNA complex with a single-wall nanotube probe: Fast nucleobase autoionization mechanism
Authors:
Tetyana Ignatova,
Alexander Balaeff,
Ming Zheng,
Michael Blades,
Peter Stoeckl,
Slava V. Rotkin
Abstract:
DNA autoionization is a fundamental process wherein UV-photoexcited nucleobases dissipate energy by charge transfer to the environment without undergoing chemical damage. Here, single-wall carbon nanotubes (SWNT) are explored as a photoluminescent reporter for studying the mechanism and rates of DNA autoionization. Two-color photoluminescence spectroscopy allows separate photoexcitation of the DNA…
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DNA autoionization is a fundamental process wherein UV-photoexcited nucleobases dissipate energy by charge transfer to the environment without undergoing chemical damage. Here, single-wall carbon nanotubes (SWNT) are explored as a photoluminescent reporter for studying the mechanism and rates of DNA autoionization. Two-color photoluminescence spectroscopy allows separate photoexcitation of the DNA and the SWNTs in the UV and visible range, respectively. A strong SWNT photoluminescence quenching is observed when the UV pump is resonant with the DNA absorption, consistent with charge transfer from the excited states of the DNA to the SWNT. Semiempirical calculations of the DNA-SWNT electronic structure, combined with a Green's function theory for charge transfer, show a 20 fs autoionization rate, dominated by the hole transfer. Rate-equation analysis of the spectroscopy data confirms that the quenching rate is limited by the thermalization of the free charge carriers transferred to the nanotube reservoir. The developed approach has a great potential for monitoring DNA excitation, autoionization, and chemical damage both {\it in vivo} and {\it in vitro}.
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Submitted 2 December, 2015;
originally announced December 2015.
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Low B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene
Authors:
Christoph Neumann,
Sven Reichardt,
Marc Drögeler,
Bernat Terrés,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Slava V. Rotkin,
Christoph Stampfer
Abstract:
Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high…
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Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as $1.20 \times 10^6$ m/s, for the observed "dressed" Landau level transitions, as well as the broadening of the resonances, which increases with Landau level index.
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Submitted 16 April, 2015; v1 submitted 14 April, 2015;
originally announced April 2015.
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Raman spectroscopy as probe of nanometer-scale strain variations in graphene
Authors:
Christoph Neumann,
Sven Reichardt,
Pedro Venezuela,
Marc Drögeler,
Luca Banszerus,
Michael Schmitz,
Kenji Watanabe,
Takashi Taniguchi,
Francesco Mauri,
Bernd Beschoten,
Slava V. Rotkin,
Christoph Stampfer
Abstract:
Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information o…
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Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information on nanometer-scale flatness and lattice deformations of graphene, making it a good quantity for classifying the structural quality of graphene even at zero magnetic field.
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Submitted 30 March, 2015; v1 submitted 30 June, 2014;
originally announced June 2014.
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Spontaneous decay of an emitter's excited state near a finite-length metallic carbon nanotube
Authors:
A. M. Nemilentsau,
G. Ya. Slepyan,
S. A. Maksimenko,
A. Lakhtakia,
S. V. Rotkin
Abstract:
The spontaneous decay of an excited state of an emitter placed in the vicinity of a metallic single-wall carbon nanotube (SWNT) was examined theoretically. The emitter-SWNT coupling strongly depends on the position of the emitter relative to the SWNT, the length of the SWNT, the dipole transition frequency and the orientation of the emitter. In the high-frequency regime, dips in the spectrum of th…
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The spontaneous decay of an excited state of an emitter placed in the vicinity of a metallic single-wall carbon nanotube (SWNT) was examined theoretically. The emitter-SWNT coupling strongly depends on the position of the emitter relative to the SWNT, the length of the SWNT, the dipole transition frequency and the orientation of the emitter. In the high-frequency regime, dips in the spectrum of the spontaneous decay rate exist at the resonance frequencies in the spectrum of the SWNT conductivity. In the intermediate-frequency regime, the SWNT conductivity is very low, and the spontaneous decay rate is practically unaffected by the SWNT. In the low-frequency regime, the spectrum of the spontaneous decay rate contains resonances at the antennas resonance frequencies for surface-wave propagation in the SWNT. Enhancement of both the total and radiative spontaneous decay rates by several orders in magnitude is predicted at these resonance frequencies. The strong emitter-field coupling is achieved, in spite of the low Q factor of the antenna resonances, due to the very high magnitude of the electromagnetic field in the near-field zone. The vacuum Rabi oscillations of the population of the excited emitter state are exhibited when the emitter is coupled to an antenna resonance of the SWNT.
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Submitted 24 August, 2010;
originally announced August 2010.
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Theoretical and Experimental Studies of Schottky Diodes That Use Aligned Arrays of Single Walled Carbon Nanotubes
Authors:
Xinning Ho,
Lina Ye,
Slava V. Rotkin,
Xu Xie,
Frank Du,
Simon Dunham,
Jana Zaumseil,
John A. Rogers
Abstract:
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due t…
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We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of m-SWNT shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to ten micrometer.
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Submitted 5 May, 2010;
originally announced May 2010.
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Scattering of the near field of an electric dipole by a single-wall carbon nanotube
Authors:
Andrei M. Nemilentsau,
Gregory Ya. Slepyan,
Sergey A. Maksimenko,
Akhlesh Lakhtakia,
Slava V. Rotkin
Abstract:
The use of carbon nanotubes as optical probes for scanning near-field optical microscopy requires an understanding of their near-field response. As a first step in this direction, we investigated the lateral resolution of a carbon nanotube tip with respect to an ideal electric dipole representing an elementary detected object. A Fredholm integral equation of the first kind was formulated for the s…
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The use of carbon nanotubes as optical probes for scanning near-field optical microscopy requires an understanding of their near-field response. As a first step in this direction, we investigated the lateral resolution of a carbon nanotube tip with respect to an ideal electric dipole representing an elementary detected object. A Fredholm integral equation of the first kind was formulated for the surface electric current density induced on a single-wall carbon nanotube (SWNT) by the electromagnetic field due to an arbitrarily oriented electric dipole located outside the SWNT. The response of the SWNT to the near field of a source electric dipole can be classified into two types, because surface-wave propagation occurs with (i) low dam** at frequencies less than ~ 200-250 THz and (ii) high dam** at higher frequencies. The interaction between the source electric dipole and the SWNT depends critically on their relative location and relative orientation, and shows evidence of the geometrical resonances of the SWNT in the low-frequency regime. These resonances disappear when the relaxation time of the SWNT is sufficiently low. The far-field radiation intensity is much higher when the source electric dipole is placed near an edge of SWNT than at the centroid of the SWNT. The use of an SWNT tip in scattering-type scanning near-field optical microscopy can deliver a resolution less than ~ 20 nm. Moreover, our study shows that the relative orientation and distance between the SWNT and the nanoscale dipole source can be detected.
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Submitted 24 March, 2010;
originally announced March 2010.
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An essential mechanism of heat dissipation in carbon nanotube electronics
Authors:
Slava V. Rotkin,
Vasili Perebeinos,
Alexey G. Petrov,
Phaedon Avouris
Abstract:
Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels…
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Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, do**, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the non-suspended nanotube to the substrate, which was found to be 0.1-0.2 W/m.K even in the absence of the bare phononic thermal coupling.
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Submitted 7 March, 2009;
originally announced March 2009.
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Optical Identification of a DNA-Wrapped Carbon Nanotube: Signs of Helically Broken Symmetry
Authors:
Stacy E. Snyder,
Slava V. Rotkin
Abstract:
High intrinsic mobility and small, biologically-compatible size make single-walled carbon nanotubes (SWNTs) in demand for the next generation of electronic devices. Further, the wide range of available bandgaps due to changes in diameter and symmetry give SWNTs greater versatility than traditional semiconductors. Single-stranded DNA has been employed to make these desirable properties accessible…
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High intrinsic mobility and small, biologically-compatible size make single-walled carbon nanotubes (SWNTs) in demand for the next generation of electronic devices. Further, the wide range of available bandgaps due to changes in diameter and symmetry give SWNTs greater versatility than traditional semiconductors. Single-stranded DNA has been employed to make these desirable properties accessible for large scale fabrication of devices. Because single-stranded DNA can helically wrap a SWNT, forming a stable hybrid structure, DNA/polymer wrap** has been used to disperse bundles of intrinsically hydrophobic SWNTs into individual tubes in aqueous solution. The ability to isolate individual tubes, make them soluble, and separate them according to symmetry would enable fabrication of SWNT optoelectronic devices that benefit from the unique electronic properties of specific nanotube structures. Envisioning optoelectronic applications of nanotubes, we investigate whether the optical properties of DNA-wrapped SWNT materials are different than those of pristine SWNTs. Our previous work found that bandstructures of DNA-SWNTs were indeed affected by the charged wrap. That is, the direct optical bandgap, $E_{11}$, decreases, but changes are fairly small. This is consistent with the available experimental data in standard experimental geometry in which incident light is polarized along the SWNT axis. Here we consider optical absorption of light with perpendicular (or circular) polarization with respect to the tube axis, which has been measured experimentally for SWNTs dispersed using a surfactant. In this geometry we find qualitative changes in the absorption spectra of SWNTs upon hybridization with DNA, including strong optical circular dichroism in non-chiral SWNTs.
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Submitted 26 March, 2008;
originally announced March 2008.
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Gate Capacitance Coupling of Singled-walled Carbon Nanotube Thin-film Transistors
Authors:
Qing Cao,
Minggang Xia,
Coskun Kocabas,
Moonsub Shim,
John A. Rogers,
Slava V. Rotkin
Abstract:
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some…
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The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use sub-monolayer, random networks of SWNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.
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Submitted 6 December, 2006; v1 submitted 30 November, 2006;
originally announced December 2006.
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Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes
Authors:
Yan Li,
Slava V. Rotkin,
Umberto Ravaioli
Abstract:
Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry requirements apply for both the nanotube and the perturbation potential, as studied within a nonorthogonal $π$-orbital tight-binding method. Perturbations of two cat…
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Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry requirements apply for both the nanotube and the perturbation potential, as studied within a nonorthogonal $π$-orbital tight-binding method. Perturbations of two categories are considered: an on-site electrostatic potential and a lattice deformation which changes the off-site hop** integrals. Armchair nanotubes are proved to be robust against the metal-semiconductor transition in second-order perturbation theory due to their high symmetry, but can develop a nonzero gap by extending the perturbation series to higher orders or by combining potentials of different types. An assumption of orthogonality between $π$ orbitals is shown to lead to an accidental electron-hole symmetry and extra selection rules that are weakly broken in the nonorthogonal theory. These results are further generalized to metallic nanotubes of arbitrary chirality.
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Submitted 16 November, 2005;
originally announced November 2005.
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Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking
Authors:
Yan Li,
Slava V. Rotkin,
Umberto Ravaioli
Abstract:
The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We est…
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The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.
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Submitted 16 November, 2005; v1 submitted 17 September, 2004;
originally announced September 2004.
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Transport in Nanotubes: Effect of Remote Impurity Scattering
Authors:
Alexey G. Petrov,
Slava V. Rotkin
Abstract:
Theory of the remote Coulomb impurity scattering in single--wall carbon nanotubes is developed within one--electron approximation. Boltzmann equation is solved within drift--diffusion model to obtain the tube conductivity. The conductivity depends on the type of the nanotube bandstructure (metal or semiconductor) and on the electron Fermi level. We found exponential dependence of the conductivit…
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Theory of the remote Coulomb impurity scattering in single--wall carbon nanotubes is developed within one--electron approximation. Boltzmann equation is solved within drift--diffusion model to obtain the tube conductivity. The conductivity depends on the type of the nanotube bandstructure (metal or semiconductor) and on the electron Fermi level. We found exponential dependence of the conductivity on the Fermi energy due to the Coulomb scattering rate has a strong dependence on the momentum transfer. We calculate intra-- and inter--subband scattering rates and present general expressions for the conductivity. Numerical results, as well as obtained analytical expressions, show that the degenerately doped semiconductor tubes may have very high mobility unless the do** level becomes too high and the inter--subband transitions impede the electron transport.
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Submitted 25 February, 2004;
originally announced February 2004.
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Possibility of a Metallic Field-Effect Transistor
Authors:
Slava V. Rotkin,
Karl Hess
Abstract:
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunnelling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes…
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We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunnelling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes electron flow and thus permits transistor action. This type of metallic field effect is advantageous because of the high conductance of the metallic tubes in the ON--state.
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Submitted 9 January, 2004;
originally announced January 2004.
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Breaking of Nanotube Symmetry by Substrate Polarization
Authors:
Alexey G. Petrov,
Slava V. Rotkin
Abstract:
Substrate and nanotube polarization are shown to change qualitatively a nanotube bandstructure. The effect is studied in a linear approximation in an external potential which causes the changes. A work function difference between the nanotube and gold surface is estimated to be large enough to break the band symmetry and lift a degeneracy of a lowest but one subband of a metallic nanotube. This…
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Substrate and nanotube polarization are shown to change qualitatively a nanotube bandstructure. The effect is studied in a linear approximation in an external potential which causes the changes. A work function difference between the nanotube and gold surface is estimated to be large enough to break the band symmetry and lift a degeneracy of a lowest but one subband of a metallic nanotube. This subband splitting for [10,10] nanotube is about 50 meV in absence of other external potential.
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Submitted 16 April, 2003;
originally announced April 2003.
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Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field
Authors:
Yan Li,
Slava V. Rotkin,
Umberto Ravaioli
Abstract:
The electronic properties of carbon nanotubes in a uniform transverse field are investigated within a single orbital tight-binding model. For doped nanotubes, the dielectric function is found to depend not only on symmetry of the tube, but also on radius and Fermi level position. Bandgap opening/closing is predicted for zigzag tubes, while it is found that armchair tubes always remain metallic,…
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The electronic properties of carbon nanotubes in a uniform transverse field are investigated within a single orbital tight-binding model. For doped nanotubes, the dielectric function is found to depend not only on symmetry of the tube, but also on radius and Fermi level position. Bandgap opening/closing is predicted for zigzag tubes, while it is found that armchair tubes always remain metallic, which is explained by the symmetry in their configuration. The bandstructures for both types are considerably modified when the field strength is large enough to mix neighboring subbands.
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Submitted 19 December, 2002;
originally announced December 2002.
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On surface energy of graphene and carbon nanoclusters
Authors:
Slava V. Rotkin
Abstract:
Theoretical study of graphite (graphene) edge is done. The most stable edge orientation is calculated to be a zigzag [110] edge. Possible applications of the result to the formation of different graphitic structures are discussed.
Theoretical study of graphite (graphene) edge is done. The most stable edge orientation is calculated to be a zigzag [110] edge. Possible applications of the result to the formation of different graphitic structures are discussed.
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Submitted 13 July, 2001;
originally announced July 2001.
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Rolling up of graphite sheet: Energetics of shell formation
Authors:
Slava V. Rotkin,
Robert A. Suris
Abstract:
The energetics of transformation of a planar fragment of a graphite monolayer into a spherical cluster is studied. The path considered is that a flat cluster rolls up into a segment of a spherical shell. The energy landscape of the process is presented. A simple model, formerly invented for calculating the carbon nanocluster formation energy, is used to evaluate the energies of intermediate stat…
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The energetics of transformation of a planar fragment of a graphite monolayer into a spherical cluster is studied. The path considered is that a flat cluster rolls up into a segment of a spherical shell. The energy landscape of the process is presented. A simple model, formerly invented for calculating the carbon nanocluster formation energy, is used to evaluate the energies of intermediate states. Although the spherical-shell closed cluster has the lowest energy, curving of a plane fragment into a segment has an energy barrier. The barrier height goes to zero for clusters with the number of atoms greater than some $N_{\rm th}$, for which the cluster size is found analytically.
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Submitted 14 July, 2000;
originally announced July 2000.
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Depolarisation of spherical-membrane quantum well: Gap renormalisation for closed-shell fullerenes
Authors:
Slava V. Rotkin
Abstract:
An anomalous large level shift is newly found to correct the one-electron spectrum of a closed-shell carbon nanocluster, for example, the spectrum which was described within the model of a thin quantum well rolled into a sphere. As a result of the interaction with zero-point oscillations of the confined modes of the electric field, the one-electron energy levels heighten. The depolarization depe…
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An anomalous large level shift is newly found to correct the one-electron spectrum of a closed-shell carbon nanocluster, for example, the spectrum which was described within the model of a thin quantum well rolled into a sphere. As a result of the interaction with zero-point oscillations of the confined modes of the electric field, the one-electron energy levels heighten. The depolarization depends on the electron momentum, why it does not shift the rotational spectrum as a whole. Surprisingly the shift in a spherical closed-shell cluster of an arbitrary size is described by an universal law. The non-equidistant shift of the levels results in an increase of an one-electron gap by 1.4 times.
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Submitted 21 February, 2000;
originally announced February 2000.
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On depolarisation level shift in spherical QD
Authors:
Slava V. Rotkin
Abstract:
A giant level shift, resulted from the interaction of an electron in a spherical quantum dot with zero--point oscillations of confined modes of the electric field, is divulged. The energy correction depends on the dot radius. This size scaling of the depolarisation effect is computed semiclassically. A change of the optical properties of the matrix surrounding the dot provides a method to study…
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A giant level shift, resulted from the interaction of an electron in a spherical quantum dot with zero--point oscillations of confined modes of the electric field, is divulged. The energy correction depends on the dot radius. This size scaling of the depolarisation effect is computed semiclassically. A change of the optical properties of the matrix surrounding the dot provides a method to study the shift experimentally.
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Submitted 28 February, 2000; v1 submitted 21 February, 2000;
originally announced February 2000.
