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Engineering the Magnetic Transition Temperatures and the Rare Earth Exchange Interaction in Oxide Heterostructures
Authors:
Jonathan Spring,
Natalya Fedorova,
Alexandru B. Georgescu,
Alexander Vogel,
Gabriele De Luca,
Simon Jöhr,
Cinthia Piamonteze,
Marta D. Rossell,
Jorge Íñiguez-González,
Marta Gibert
Abstract:
The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically precise heterostructures. This enables minute control over the electronic, magnetic, and structural characteristics. Here, we investigate the magnetic properties of…
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The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer the interface physics through the growth of atomically precise heterostructures. This enables minute control over the electronic, magnetic, and structural characteristics. Here, we investigate the magnetic properties of tailor-made superlattices employing the ferromagnetic and insulating double perovskites RE$_2$NiMnO$_6$ (RE = La, Nd), featuring distinct Curie temperatures. Adjusting the superlattice periodicity at the unit cell level allows us to engineer their magnetic phase diagram. Large periodicity superlattices conserve the individual para- to ferromagnetic transitions of the La$_2$NiMnO$_6$ and Nd$_2$NiMnO$_6$ parent compounds. As the superlattice periodicity is reduced, the Curie temperatures of the superlattice constituents converge and, finally, collapse into one single transition for the lowest period samples. This is a consequence of the magnetic order parameter propagating across the superlattice interfaces, as supported by a minimal Landau theory model. Further, we find that the Nd-Ni/Mn exchange interaction can be enhanced by the superlattice interfaces. This leads to a field-induced reversal of the Nd magnetic moments, as confirmed by synchrotron X-ray magnetic circular dichroism measurements and supported by first-principles calculations. Our work demonstrates how superlattice engineering can be employed to fine-tune the magnetic properties in oxide heterostructures and broadens our understanding of magnetic interfacial effects.
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Submitted 17 June, 2024; v1 submitted 14 June, 2024;
originally announced June 2024.
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Combined theoretical and experimental study of the Moiré dislocation network at the SrTiO$_3$-(La,Sr)(Al,Ta)O$_3$ interface
Authors:
Chiara Ricca,
Elizabeth Skoropata,
Marta D. Rossell,
Rolf Erni,
Urs Staub,
Ulrich Aschauer
Abstract:
Recently a highly ordered Moiré dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local ionic and electronic structure around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here we c…
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Recently a highly ordered Moiré dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local ionic and electronic structure around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here we combine experimental characterization via analytical scanning transmission electron microscopy with results of molecular dynamics and density functional theory calculations to gain insights into the structure and defect chemistry of these dislocation arrays. Our results show that these dislocations lead to undercoordinated Ta/Al cations at the dislocation core, where oxygen vacancies can easily be formed, further facilitated by the presence of cation vacancies. The reduced Ti$^{3+}$ observed experimentally at the dislocations by electron energy-loss spectroscopy are a consequence of both the structure of the dislocation itself, as well as of the electron-do** due to oxygen vacancy formation. Finally, the experimentally observed Ti diffusion into LSAT around the dislocation core occurs only together with cation-vacancy formation in LSAT or Ta diffusion into STO.
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Submitted 24 July, 2023;
originally announced July 2023.
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Defeating depolarizing fields with artificial flux closure in ultrathin ferroelectrics
Authors:
Elzbieta Gradauskaite,
Quintin N. Meier,
Natascha Gray,
Marco Campanini,
Thomas Moran,
Bryan D. Huey,
Marta D. Rossell,
Manfred Fiebig,
Morgan Trassin
Abstract:
Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here, we report the stabiliz…
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Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called dead layers. It is notably problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here, we report the stabilization of ultrathin out-of-plane ferroelectricity in oxide heterostructures through the design of an artificial flux-closure architecture. Inserting an in-plane polarized ferroelectric epitaxial buffer provides continuity of polarization at the interface, and despite its insulating nature we observe the emergence of polarization in our out-of-plane-polarized model ferroelectric BaTiO$_{3}$ from the very first unit cell. In BiFeO$_{3}$, the flux-closure approach stabilizes a conceptually novel 251$^{\circ}$ domain wall. Its unusual chirality is likely associated with the ferroelectric analog to the Dzyaloshinskii-Moriya interaction. We thus see that in an adaptively engineered geometry, the depolarizing-field-screening properties of an insulator can even surpass those of a metal and be a source of new functionalities. This should be a useful insight on the road towards the next generation of ferroelectric-based oxide electronics.
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Submitted 21 December, 2022;
originally announced December 2022.
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Layer and spontaneous polarizations in perovskite oxides and their interplay in multiferroic bismuth ferrite
Authors:
Nicola A Spaldin,
Ipek Efe,
Marta D Rossell,
Chiara Gattinoni
Abstract:
We review the concept of surface charge, first in the context of the polarization in ferroelectric materials, and second in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the ferroelectrics community, and the latter in the surface science community, we remind the reader that the two descriptions are conveniently unified within the modern t…
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We review the concept of surface charge, first in the context of the polarization in ferroelectric materials, and second in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the ferroelectrics community, and the latter in the surface science community, we remind the reader that the two descriptions are conveniently unified within the modern theory of polarization. In both cases, the surface charge leads to electrostatic instability - the so-called "polar catastrophe" - if it is not compensated, and we review the range of phenomena that arise as a result of different compensation mechanisms. We illustrate these concepts using the example of the prototypical multiferroic bismuth ferrite, BiFeO3, which is unusual in that its spontaneous ferroelectric polarization and its layer charges can be of the same magnitude. As a result, for certain combinations of polarization orientation and surface terminationits surface charge is self-compensating. We use density functional calculations of BiFeO3 slabs and superlattices, analysis of high-resolution transmission electron micrographs as well as examples from the literature to explore the consequences of this peculiarity.
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Submitted 25 February, 2021; v1 submitted 16 February, 2021;
originally announced February 2021.
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Robust ferromagnetism in insulating La$_2$NiMnO$_6$ thin films
Authors:
G. De Luca,
J. Spring,
U. Bashir,
M. Campanini,
R. Totani,
C. Dominguez,
A. Zakharova,
M. Döbeli,
T. Greber,
M. D. Rossell,
C. Piamonteze,
M. Gibert
Abstract:
The field of oxide spintronics can strongly benefit from the establishment of robust ferromagnetic insulators with near room-temperature Curie temperature. Here we investigate the structural, electronic, and magnetic properties of atomically-precise epitaxially-strained thin films of the double perovskite La$_2$NiMnO$_6$ (LNMO) grown by off-axis radio-frequency magnetron sputtering. We find that t…
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The field of oxide spintronics can strongly benefit from the establishment of robust ferromagnetic insulators with near room-temperature Curie temperature. Here we investigate the structural, electronic, and magnetic properties of atomically-precise epitaxially-strained thin films of the double perovskite La$_2$NiMnO$_6$ (LNMO) grown by off-axis radio-frequency magnetron sputtering. We find that the films retain both a strong insulating behavior and a bulk-like Curie temperature in the order of 280 K, nearly independently from epitaxial strain conditions. These results suggest a prospective implementation of LNMO films in multi-layer device architectures where a high-temperature ferromagnetic insulating state is a prerequisite.
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Submitted 20 January, 2021; v1 submitted 19 January, 2021;
originally announced January 2021.
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Epitaxial integration of improper ferroelectric h-YMnO$_3$ thin films in heterostructures
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
We report on multiple fundamental qualitative improvements in the growth of improper ferroelectric hexagonal YMnO$_3$ (YMO) thin films and heterostructures by pulsed laser deposition (PLD). By a combination of pre-growth substrate annealing and low-energy-fluence PLD, we obtain a two-dimensional growth mode of the YMO films on yttria-stabilized zirconia (YSZ) with ultralow roughness and devoid of…
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We report on multiple fundamental qualitative improvements in the growth of improper ferroelectric hexagonal YMnO$_3$ (YMO) thin films and heterostructures by pulsed laser deposition (PLD). By a combination of pre-growth substrate annealing and low-energy-fluence PLD, we obtain a two-dimensional growth mode of the YMO films on yttria-stabilized zirconia (YSZ) with ultralow roughness and devoid of misoriented nanocrystalline inclusions. By inserting a sacrificial manganite layer capped with conducting indium-tin oxide between the substrate and the final film, the latter is grown in a fully lattice-relaxed mode and, thus, without any misfit dislocations while maintaining the extraordinary flatness of the films grown directly on pre-annealed YSZ. This provides a template for the fabrication of heterostructures based on hexagonal manganites as promising class of multiferroics with improper room-temperature ferroelectricity and the implementation of these into technologically relevant epitaxial metal|ferroelectric-type multilayers.
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Submitted 4 November, 2020;
originally announced November 2020.
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Combined electrostatic and strain engineering of BiFeO$_3$ thin films at the morphotropic phase boundary
Authors:
Johanna Nordlander,
Bastien F. Grosso,
Marta D. Rossell,
Aline Maillard,
Elzbieta Gradauskaite,
Nicola A. Spaldin,
Manfred Fiebig,
Morgan Trassin
Abstract:
Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the f…
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Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over the more common rhombohedral (R) structure. To utilize the functionality of such metastable BFO phases in device applications, it is essential to understand the ferroelectric phase evolution upon insertion in nanoscale heterostructures. Here, we explore the emergence of ferroelectric phases close to the morphotropic phase boundary in compressively strained BFO during thin-film growth using in-situ optical second harmonic generation. We find that the epitaxial films form at the growth temperature in the ideal T phase without critical thickness for the polarization. Signatures of T-like and R-like monoclinically distorted phases only appear upon sample cooling. We furthermore demonstrate a robustness of single-domain polarization in the high-temperature T phase during the growth of capacitor-like metal|ferroelectric|metal heterostructures. Here, a reduction in tetragonality of the T phase, rather than domain formation, lowers the electrostatic energy. At this lower tetragonality, density-functional calculations and scanning transmission electron microscopy point to the stabilization of a new metastable R-like monoclinic structure upon cooling the heterostructure down to room temperature. Our results thus show that the combination of strain and electrostatic phase stabilization in BFO heterostructures yields a prominent platform for exploring ferroelectric phases and realizing ultrathin ferroelectric devices.
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Submitted 25 October, 2022; v1 submitted 19 May, 2020;
originally announced May 2020.
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Inversion-symmetry engineering in sub-unit-cell-layered oxide thin films
Authors:
J. Nordlander,
M. D. Rossell,
M. Campanini,
M. Fiebig,
M. Trassin
Abstract:
Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of…
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Inversion symmetry breaking is a ubiquitous concept in condensed-matter science. On the one hand, it is a prerequisite for many technologically relevant effects such as piezoelectricity, photovoltaic and nonlinear optical properties and spin-transport phenomena. On the other hand, it may determine abstract properties such as the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be the ultimate route towards controlling parity-related phenomena and functionalities. Here, we engineer the symmetry of ultrathin epitaxial oxide films by sub-unit-cell growth control. We reversibly activate and deactivate inversion symmetry in the layered hexagonal manganites, h-RMnO$_3$ with R = Y, Er, Tb. While an odd number of half-unit-cell layers exhibits a breaking of inversion symmetry through its arrangement of MnO$_5$ bipyramids, an even number of such half-unit-cell layers takes on a centrosymmetric structure. Here we control the resulting symmetry by tracking the growth in situ via optical second-harmonic generation. We furthermore demonstrate that our symmetry engineering works independent of the choice of R and even in heterostructures mixing constituents with different R in a two-dimensional growth mode. Symmetry engineering on the atomic level thus suggests a new platform for the controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.
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Submitted 18 May, 2020;
originally announced May 2020.
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Domain Wall Motion and Interfacial Dzyaloshinskii-Moriya Interactions in Pt/Co/Ir$(t_\mathrm{Ir})$/Ta Multilayers
Authors:
Kowsar Shahbazi,
Joo-Von Kim,
Hans T. Nembach,
Justin M. Shaw,
Andreas Bischof,
Marta D. Rossell,
Vincent Jeudy,
Thomas A. Moore,
Christopher H. Marrows
Abstract:
The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta. We observe a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the pe…
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The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta. We observe a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the perpendicular anisotropy is hardly affected. All samples show a universal scaling of the field-driven domain wall velocity across the creep and depinning regimes. Asymmetric bubble expansion shows that DWs in all of the samples have the left-handed Néel form. The value of in-plane field at which the creep velocity shows a minimum drops markedly on the introduction of Ir, as does the frequency shift of the Stokes and anti-Stokes peaks in Brillouin light scattering measurements. Despite this qualitative similarity, there are quantitative differences in the DMI strength given by the two measurements, with BLS often returning higher values. Many features in bubble expansion velocity curves do not fit simple models commonly used to date, namely a lack of symmetry about the velocity minimum and no difference in velocities at high in-plane field. These features are explained by the use of a model in which the depinning field is allowed to vary with in-plane field in a way determined from micromagnetic simulations. This theory shows that velocity minimum underestimates the DMI field, consistent with BLS returning higher values. Our results suggest that the DMI at an Ir/Co interface has the same sign as the DMI at a Pt/Co interface.
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Submitted 8 October, 2018;
originally announced October 2018.
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Domain wall architecture in tetragonal ferroelectric thin films
Authors:
Gabriele De Luca,
Marta D. Rossell,
Jakob Schaab,
Nathalie Viart,
Manfred Fiebig,
Morgan Trassin
Abstract:
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-p…
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Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-plane-polarized c-domains are interspersed by in-plane-polarized a-domains and the associated network of domain walls remains challenging to analyze. Here we use a combination of STEM and optical second harmonic generation (SHG) to determine the relation between strain, film thickness, local electric fields and the resulting domain and domain-wall structures across the entire thickness of a set of PZT films. We quantify the distribution of a-domains in the c-domain matrix of the films. Using locally applied electric fields we control the a/c distribution and induce the technologically preferable 180° domain walls. We find that these voltage induced walls are tilted and exhibit a mixed Ising-Néel type transverse rotation of polarization across the wall with a specific nonlinear optical response.
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Submitted 22 February, 2017;
originally announced February 2017.
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Heavy hole states in Germanium hut wires
Authors:
Hannes Watzinger,
Christoph Kloeffel,
Lada Vukušić,
Marta D. Rossell,
Violetta Sessi,
Josip Kukučka,
Raimund Kirchschlager,
Elisabeth Lausecker,
Alisha Truhlar,
Martin Glaser,
Armando Rastelli,
Andreas Fuhrer,
Daniel Loss,
Georgios Katsaros
Abstract:
Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large a…
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Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function which is of heavy hole character. A light hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors. However, this tiny light hole contribution does not influence the spin lifetimes, which are expected to be very long, even in non isotopically purified samples.
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Submitted 11 July, 2016;
originally announced July 2016.
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Interface ferromagnetism and orbital reconstruction in BiFeO3- La0.7Sr0.3MnO3 heterostructures
Authors:
P. Yu,
J. -S. Lee,
S. Okamoto,
M. D. Rossell,
M. Huijben,
C. -H. Yang,
Q. He,
J. -X. Zhang,
S. Y. Yang,
M. J. Lee,
Q. M. Ramasse,
R. Erni,
Y. -H. Chu,
D. A. Arena,
C. -C. Kao,
L. W. Martin,
R. Ramesh
Abstract:
We report the formation of a novel ferromagnetic state in the antiferromagnet BiFeO3 at the interface with La0.7Sr0.3MnO3. Using x-ray magnetic circular dichroism at Mn and Fe L2,3-edges, we discovered that the development of this ferromagnetic spin structure is strongly associated with the onset of a significant exchange bias. Our results demonstrate that the magnetic state is directly related wi…
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We report the formation of a novel ferromagnetic state in the antiferromagnet BiFeO3 at the interface with La0.7Sr0.3MnO3. Using x-ray magnetic circular dichroism at Mn and Fe L2,3-edges, we discovered that the development of this ferromagnetic spin structure is strongly associated with the onset of a significant exchange bias. Our results demonstrate that the magnetic state is directly related with an electronic orbital reconstruction at the interface, which is supported by the linearly polarized x-ray absorption measurement at oxygen K-edge.
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Submitted 7 June, 2010;
originally announced June 2010.