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Dirac Dispersions and Fermi Surface Nesting in LaCuSb$_{2}$
Authors:
Marcin Rosmus,
Natalia Olszowska,
Zbigniew Bukowski,
Przemysław Piekarz,
Andrzej Ptok,
Paweł Starowicz
Abstract:
LaCuSb$_{2}$ is a superconductor with a transition temperature of about $T_\text{c} = 0.9$K and is a potential platform where Dirac fermions can be experimentally observed. In this paper, we report systematic high-resolution studies of its electronic structure using the angle-resolved photoemission spectroscopy (ARPES) technique supported by the DFT calculation. The Fermi surface consists of four…
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LaCuSb$_{2}$ is a superconductor with a transition temperature of about $T_\text{c} = 0.9$K and is a potential platform where Dirac fermions can be experimentally observed. In this paper, we report systematic high-resolution studies of its electronic structure using the angle-resolved photoemission spectroscopy (ARPES) technique supported by the DFT calculation. The Fermi surface consists of four branches, of which the two inner ones are more 3-dimensional and the theoretical calculations reproduce well the experiment. We observe several linear dispersions forming Dirac-like structures. The nodal lines are present in the system along ${\text{M}}$-${\text{A}}$ and ${\text{X}}$-${\text{R}}$ and Dirac crossings along ${\text{X}}$-${\text{R}}$ are observed by ARPES. Finally, the nesting between external Fermi surface pockets, which corresponds to charge density wave (CDW) modulation vector is enhanced in LaCuSb$_{2}$ as compared to LaAgSb$_{2}$, while CDW appears in the latter system.
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Submitted 3 April, 2024; v1 submitted 26 March, 2024;
originally announced March 2024.
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Emergent impervious band crossing in the bulk in topological nodal line semimetal ZrAs$_2$
Authors:
A. S. Wadge,
K. Zberecki,
B. J. Kowalski,
D. Jastrzebski,
P. K. Tanwar,
P. Iwanowski,
R. Diduszko,
A. Moosarikandy,
M. Rosmus,
N. Olszowska,
A. Wisniewski
Abstract:
Topological nodal line semimetals (TSMs) represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with non-trivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines forming continuous loops in momentum space, governed by non-symmorphic symmetries. This study integrates angle-resolved photo…
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Topological nodal line semimetals (TSMs) represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with non-trivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines forming continuous loops in momentum space, governed by non-symmorphic symmetries. This study integrates angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations to explore the electronic states of ZrAs$_2$. In ARPES scans, we observed a distinctive nodal loop structure observed at lower excitation energies of 30 and 50 eV. Our results, supported by calculations based on DFT, unveil symmetry-enforced Dirac-like band crossings anchored at specific points in the Brillouin zone, with particular emphasis on the S point. Surface bands and bulk states near the crossing are elucidated through slab calculations, corroborating experimental findings. DFT calculations also show the existence of several spin-orbit coupling (SOC) resilient semi-Dirac crossings pinned at Z point. This comprehensive investigation sheds light on the intricate electronic behaviors of ZrAs$_2$ with the involved symmetries, important for fundamental understanding of topological nodal line semimetals.
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Submitted 7 March, 2024;
originally announced March 2024.
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Intercalation-induced states at the Fermi level and the coupling of intercalated magnetic ions to conducting layers in Ni$_{1/3}$NbS$_2$
Authors:
Yuki Utsumi Boucher,
Izabela Biało,
Mateusz A. Gala,
Wojciech Tabiś,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Bruno Gudac,
Mario Novak,
Naveen Kumar Chogondahalli Muniraju,
Ivo Batistić,
Neven Barišić,
Petar Popčević,
Eduard Tutiš
Abstract:
The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spe…
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The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spectroscopy at various photon energies, the {\it ab initio} electronic structure calculations, and modeling to address the particular case of Ni-intercalate, Ni$_{1/3}$NbS$_2$. We find that the bands around the Fermi level bear the signature of a strong yet unusual hybridization between NbS$_2$ conduction band states and the Ni 3$d$ orbitals. The hybridization between metallic NbS$_2$ layers is almost entirely suppressed in the central part of the Brillouin zone, including the part of the Fermi surface around the $\mathrmΓ$ point. Simultaneously, it gets very pronounced towards the zone edges. It is shown that this behavior is the consequence of the rather exceptional, {\it symmetry imposed}, spatially strongly varying, {\it zero total} hybridization between relevant Ni magnetic orbitals and the neighboring Nb orbitals that constitute the metallic bands. We also report the presence of the so-called $β$-feature, discovered only recently in two other magnetic intercalates with very different magnetic orderings. In Ni$_{1/3}$NbS$_2$, the feature shows only at particular photon energies, indicating its bulk origin. Common to prior observations, it appears as a series of very shallow electron pockets at the Fermi level, positioned along the edge of the Brillouin zone. Unforeseen by {\it ab initio} electronic calculations, and its origin still unresolved, the feature appears to be a robust consequence of the intercalation of 2H-NbS$_2$ with magnetic ions.
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Submitted 15 February, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
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Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
Authors:
G. Krizman,
J. Bermejo-Ortiz,
T. Zakusylo,
M. Hajlaoui,
T. Takashiro,
M. Rosmus,
N. Olszowska,
J. J. Kolodziej,
G. Bauer,
Y. Guldner,
G. Springholz,
L. -A. de Vaulchier
Abstract:
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band g…
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In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band gap, we observe a bipolar QH phase, heralded by the coexistence of hole and electron chiral edge states at distinct valleys in the same quantum well. This suggests that spatially overlaid counter-propagating chiral edge states emerging at different valleys do not interfere with each other.
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Submitted 4 January, 2024;
originally announced January 2024.
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A Novel Ferroelectric Rashba Semiconductor
Authors:
Gauthier Krizman,
Tetiana Zakusylo,
Lakshmi Sajeev,
Mahdi Hajlaoui,
Takuya Takashiro,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Guenther Bauer,
Ondrej Caha,
Gunther Springholz
Abstract:
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the…
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Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.
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Submitted 19 October, 2023;
originally announced October 2023.
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3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Authors:
Jakub Polaczyński,
Gauthier Krizman,
Alexandr Kazakov,
Bartłomiej Turowski,
Joaquín Bermejo Ortiz,
Rafał Rudniewski,
Tomasz Wojciechowski,
Piotr Dłużewski,
Marta Aleszkiewicz,
Wojciech Zaleszczyk,
Bogusława Kurowska,
Zahir Muhammad,
Marcin Rosmus,
Natalia Olszowska,
Louis-Anne De Vaulchier,
Yves Guldner,
Tomasz Wojtowicz,
Valentine V. Volobuev
Abstract:
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α…
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$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
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Submitted 13 June, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound
Authors:
P. Rezende-Gonçalves,
M. Thees,
J. Rojas Castillo,
D. Silvera-Vega,
R. L. Bouwmeester,
E. David,
A. Antezak,
A. J. Thakur,
F. Fortuna,
P. Le Fèvre,
M. Rosmus,
N. Olszowska,
R. Magalhães-Paniago,
A. C. Garcia-Castro,
P. Giraldo-Gallo,
E. Frantzeskakis,
A. F. Santander-Syro
Abstract:
TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r…
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TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have reported metallic behavior with a resistivity plateau at temperatures lower than 10 K. In this paper, we study the electronic structure of TaTe$_4$ using a combination of high-resolution angle-resolved photoemission spectroscopy and density functional calculations. Our results reveal the existence of the long-sought metallic states. These states exhibit mixed dimensionality, while some of them might have potential topological properties.
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Submitted 28 April, 2023;
originally announced May 2023.
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Electronic band structure and surface states in Dirac semimetal LaAgSb$_{2}$
Authors:
Marcin Rosmus,
Natalia Olszowska,
Zbigniew Bukowski,
Paweł Starowicz,
Przemysław Piekarz,
Andrzej Ptok
Abstract:
LaAgSb$_{2}$ is a Dirac semimetal showing charge density wave (CDW) order. Previous ARPES results suggest the existence of the Dirac-cone-like structure in the vicinity of the Fermi level along the $Γ$-M direction [X. Shi et al., Phys. Rev. B 93, 081105(R) (2016)]. This paper is devoted to a complex analysis of the electronic band structure of LaAgSb$_{2}$ by means of angle-resolved photoemission…
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LaAgSb$_{2}$ is a Dirac semimetal showing charge density wave (CDW) order. Previous ARPES results suggest the existence of the Dirac-cone-like structure in the vicinity of the Fermi level along the $Γ$-M direction [X. Shi et al., Phys. Rev. B 93, 081105(R) (2016)]. This paper is devoted to a complex analysis of the electronic band structure of LaAgSb$_{2}$ by means of angle-resolved photoemission spectroscopy (ARPES) and theoretical calculations within the direct ab initio method as well as tight binding model formulation. To investigate the possible surface states we performed the direct DFT slab calculation and the surface Green function calculation for the (001) surface. The appearance of the surface states, which depends strongly on surface, points to the conclusion that LaSb termination is realized in the cleaved crystals. Moreover, the surface states predicted by our calculations at the $Γ$ and $X$ points are found by ARPES. Nodal lines, which exist along X--R and M-A path due to crystal symmetry, are also observed experimentally. The calculations reveal another nodal lines, which originate from vanishing of spin-orbit coupling and are located at X-M-A-R plane at the Brillouin zone boundary. In addition, we analyze band structure along the $Γ$-M path to verify, whether Dirac surface states can be expected. Their appearance in this region is not confirmed.
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Submitted 27 April, 2022;
originally announced April 2022.
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Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements
Authors:
Ashutosh S Wadge,
Bogdan J Kowalski,
Carmine Autieri,
Przemysław Iwanowski,
Andrzej Hruban,
Natalia Olszowska,
Marcin Rosmus,
Jacek Kołodziej,
Andrzej Wiśniewski
Abstract:
Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cle…
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Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology.
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Submitted 4 July, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
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Role of intercalated Cobalt in the electronic structure of Co$_{1/3}$NbS$_2$
Authors:
Petar Popčević,
Yuki Utsumi,
Izabela Biało,
Wojciech Tabis,
Mateusz A. Gala,
Marcin Rosmus,
Jacek J. Kolodziej,
Natalia Tomaszewska,
Mariusz Garb,
Helmuth Berger,
Ivo Batistić,
Neven Barišić,
László Forró,
Eduard Tutiš
Abstract:
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energ…
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Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energy of 0.5 eV accounting for the charge transfer of approximately two electrons from each Co ion into the NbS$_2$ layers. However, we observe significant departures from the 2H-NbS$_2$ rigid band picture: Entirely unrelated to the 2H-NbS$_2$ electronic structure, a shallow electronic band is found crossing the Fermi level near the boundary of the first Brillouin zone of the superstructure imposed by the intercalation. The evolution of the experimental spectra upon varying the incident photon energy suggests the Co origin of this band. Second, the Nb bonding band, found deeply submerged below the Fermi level at the $Γ$ point, indicates the interlayer-hybridization being very much amplified by intercalation, with Co magnetic ions probably acting as covalent bridges between NbS$_2$ layers. The strong hybridization between conducting and magnetic degrees of freedom suggests dealing with strongly correlated electron system where the interlayer coupling plays an exquisite role.
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Submitted 8 April, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
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We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-do** of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
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Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$
Authors:
R. Kurleto,
M. Fidrysiak,
L. Nicolaï,
J. Minár,
M. Rosmus,
Ł. Walczak,
A. Tejeda,
J. E. Rault,
F. Bertran,
A. P. Kądzielawa,
D. Legut,
D. Gnida,
D. Kaczorowski,
K. Kissner,
F. Reinert,
J. Spałek,
P. Starowicz
Abstract:
Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-…
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Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model.
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Submitted 4 September, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
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Effect of electron do** in FeTe$_{1-y}$Se$_{y}$ realized by Co and Ni substitution
Authors:
M. Rosmus,
R. Kurleto,
D. J. Gawryluk,
J. Goraus,
M. Z. Cieplak,
P. Starowicz
Abstract:
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron do**, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Do** of either element leads to a Lifshitz transition realized as a removal of one or…
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Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron do**, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Do** of either element leads to a Lifshitz transition realized as a removal of one or two hole pockets. This explains qualitatively a complex behavior of Hall coefficient observed before [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)], including change of sign with do**, which takes place only below room temperature. Assuming that Ni substitution should deliver twice more electrons to the valence band than Co, it appears that such transfer is slightly more effective in the case of Co. Therefore, charge do** cannot account for much stronger effect of Ni on superconducting and transport properties [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)]. Although overall band shifts are roughly proportional to the amount of dopant, clear deviations from a rigid band shift scenario are found. The shape of electron pockets becomes elliptical only for Ni do**, effective mass of electron bands increases with do**, strong reduction of effective mass is observed for one of hole bands of the undoped system. The topology of hole and electron pockets for superconducting Fe$_{1.01}$Te$_{0.67}$Se$_{0.33}$ with T$_{c}$=13.6 K indicates a deviation from nesting. Co and Ni do** causes further departure from nesting, which accompanies the reduction of critical temperature.
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Submitted 28 October, 2019;
originally announced October 2019.
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Studies of Electronic Structure across a Quantum Phase Transition in CeRhSb$_{1-x}$Sn$_x$
Authors:
R. Kurleto,
J. Goraus,
M. Rosmus,
A. Ślebarski,
P. Starowicz
Abstract:
We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final state is detected. Spectral intensity at the F…
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We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final state is detected. Spectral intensity at the Fermi edge has a general tendency to grow with Sn content. Theoretical calculations of band structure are realized with full-potential local-orbital minimum-basis code using scalar relativistic and full relativistic approach. The calculations reveal a depletion of density of states at the Fermi level for CeRhSb. This gap is shifted above the Fermi energy with increasing Sn content and thus a rise of density of states at the Fermi level is reflected in the calculations. It agrees with metallic properties of compounds with larger $x$. The calculations also yield another important effects of Sn substitution. Band structure is displaced in a direction corresponding to hole do**, although with deviations from a rigid band shift scenario. Lifshitz transitions modify a topology of the Fermi surface a few times and a number of bands crossing the Fermi level increases.
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Submitted 11 March, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.