Showing 1–3 of 3 results for author: Roshko, A

New Constraints on Dark Photon Dark Matter with Superconducting Nanowire Detectors in an Optical Haloscope

Authors: Jeff Chiles, Ilya Charaev, Robert Lasenby, Masha Baryakhtar, Junwu Huang, Alexana Roshko, George Burton, Marco Colangelo, Ken Van Tilburg, Asimina Arvanitaki, Sae Woo Nam, Karl K. Berggren

Abstract: Uncovering the nature of dark matter is one of the most important goals of particle physics. Light bosonic particles, such as the dark photon, are well-motivated candidates: they are generally long-lived, weakly-interacting, and naturally produced in the early universe. In this work, we report on LAMPOST (Light $A'$ Multilayer Periodic Optical SNSPD Target), a proof-of-concept experiment searching… ▽ More Uncovering the nature of dark matter is one of the most important goals of particle physics. Light bosonic particles, such as the dark photon, are well-motivated candidates: they are generally long-lived, weakly-interacting, and naturally produced in the early universe. In this work, we report on LAMPOST (Light $A'$ Multilayer Periodic Optical SNSPD Target), a proof-of-concept experiment searching for dark photon dark matter in the eV mass range, via coherent absorption in a multi-layer dielectric haloscope. Using a superconducting nanowire single-photon detector (SNSPD), we achieve efficient photon detection with a dark count rate (DCR) of $\sim 6\times10^{-6}$ counts/s. We find no evidence for dark photon dark matter in the mass range of $\sim 0.7$-$0.8$ eV with kinetic mixing $ε\gtrsim 10^{-12}$, improving existing limits in $ε$ by up to a factor of two. With future improvements to SNSPDs, our architecture could probe significant new parameter space for dark photon and axion dark matter in the meV to 10 eV mass range. △ Less

Submitted 23 May, 2022; v1 submitted 4 October, 2021; originally announced October 2021.

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

Authors: N. A. Sanford, P. T. Blanchard, M. D. Brubaker, A. K. Rishinaramangalam, Q. Zhang, A. Roshko, D. F. Feezell, B. D. B. Klein, A. V. Davydov

Abstract: Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and… ▽ More Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and 55 nm. APT data were collected at (fixed) laser pulse energy (PE) selected within the range of (2-1000) fJ. Sample temperatures were = 54 K. PE within (2-50) fJ yielded x values that agreed with RBS (within uncertainty) and were comparatively insensitive to region-of-interest (ROI) geometry and orientation. By contrast, approximate stoichiometry was only found in the GaN portions of the samples provided PE was within (5-20) fJ and the analyses were confined to cylindrical ROIs (of diameters =20 nm) that were coaxial with the specimen tips. m-plane oriented tips were derived from c-axis grown, core-shell, GaN/In(x)Ga(1-x)N nanorod heterostructures. Compositional analysis along [0 0 0 1] (transverse to the long axis of the tip), of these m-plane samples revealed a spatial asymmetry in charge-state ratio (CSR) and a corresponding asymmetry in the resultant tip shape along this direction; no asymmetry in CSR or tip shape was observed for analysis along [-1 2-1 0]. Simulations revealed that the electric field strength at the tip apex was dominated by the presence of a p-type inversion layer, which developed under typical tip-electrode bias conditions for the n-type do** levels considered. Finally, both c-plane and m-plane sample types showed depth-dependent variations in absolute ion counts that depended upon ROI placement. △ Less

Submitted 11 February, 2021; originally announced February 2021.

Comments: 45 pages total, which includes 22 figures

Enhanced Superconducting Transition Temperature in Electroplated Rhenium

Authors: David P. Pappas, Donald E. David, Russell E. Lake, Mustafa Bal, Ron B. Goldfarb, Dustin A. Hite, Eunja Kim, Hsiang-Sheng Ku, Junling Long, Corey Rae McRae, Lee D. Pappas, Alexana Roshko, J. G. Wen, Britton L. T. Plourde, Ilke Arslan, Xian Wu

Abstract: We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. Magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper crit… ▽ More We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. Magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper critical field on the order of 2.5 T. Critical current densities greater than 10^7 A/m^2 were measured above liquid-helium temperature. Low-loss at radio frequency was obtained below the critical temperature for multilayers deposited onto resonators made with Cu traces on commercial circuit boards. These electroplated superconducting films can be integrated into a wide range of standard components for low-temperature electronics. △ Less

Submitted 9 April, 2018; v1 submitted 6 March, 2018; originally announced March 2018.