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Growth and Structure of alpha-Ta films for Quantum Circuit Integration
Authors:
Loren D. Alegria,
Alex Abelson,
Eunjeong Kim,
Soohyun Im,
Paul M. Voyles,
Vincenzo Lordi,
Jonathan L Dubois,
Yaniv J. Rosen
Abstract:
Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we inv…
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Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for growth of fully-oriented films with alpha-Ta [1 1 1] // Al2O3 [0 0 1] and alpha-Ta [1 -1 0] // Al2O3 [1 0 0] orientational relationships, and having residual resistivity ratios (RRR) ~ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ~ 30. We further demonstrate airbridge fabrication using Nb to nucleate alpha-Ta on photoresist surfaces. Superconducting resonators patterned from films on sapphire show TLS-limited quality factors of 1.4 +/- 0.3 x 10^6 at 10 mK. Structural characterization using scanning electron microscopy, X-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights for fabrication of high-performing technological devices including qubit arrays, and guide future work on crystallographically deterministic qubit fabrication.
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Submitted 30 May, 2024; v1 submitted 12 May, 2024;
originally announced May 2024.
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Red shift of the superconductivity cavity resonance in Josephson junction qubits as a direct signature of TLS population inversion
Authors:
Alexander L. Burin,
Moshe Schechter,
Daniel Tennant,
Keith G. Ray,
Yaniv J. Rosen
Abstract:
Quantum two-level systems (TLSs) limit the performance of superconducting qubits and superconducting and optomechanical resonators breaking down the coherence and absorbing the energy of oscillations. TLS absorption can be suppressed or even switched to the gain regime by inverting TLS populations. Here we theoretically explore the regime where the full inversion of TLS populations is attained at…
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Quantum two-level systems (TLSs) limit the performance of superconducting qubits and superconducting and optomechanical resonators breaking down the coherence and absorbing the energy of oscillations. TLS absorption can be suppressed or even switched to the gain regime by inverting TLS populations. Here we theoretically explore the regime where the full inversion of TLS populations is attained at energies below a pump field quantization energy by simultaneously applying the pump field and the time varying bias. This regime is attained changing the bias sufficiently slowly to fully invert TLS populations when their energies cross resonance with the pump field and sufficiently fast to avoid TLS relaxation between two resonance crossing events. This population inversion is accompanied by a significant red shift of cavity resonance due to quantum level repulsion. The red-shift in frequency serves as a signature of the population inversion, as its re-entrant behavior as function of bias sweep rate and of the magnitude of the pump field allows the determination of the TLSs dipole moment and relaxation time. The predicted behavior is qualitatively consistent with the recent experimental observations in Al superconducting resonators.
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Submitted 7 February, 2024; v1 submitted 28 January, 2024;
originally announced January 2024.
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Stochastic modeling of superconducting qudits in the dispersive regime
Authors:
Kangdi Yu,
Murat C. Sarihan,
** Ho Kang,
Madeline Taylor,
Cody S. Fan,
Ananyo Banerjee,
Jonathan L. DuBois,
Yaniv J. Rosen,
Chee Wei Wong
Abstract:
The field of superconducting quantum computing, based on Josephson junctions, has recently seen remarkable strides in scaling the number of logical qubits. In particular, the fidelities of one- and two-qubit gates have reached the breakeven point with the novel error mitigation and correction methods. Parallel to these advances is the effort to expand the Hilbert space within a single junction or…
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The field of superconducting quantum computing, based on Josephson junctions, has recently seen remarkable strides in scaling the number of logical qubits. In particular, the fidelities of one- and two-qubit gates have reached the breakeven point with the novel error mitigation and correction methods. Parallel to these advances is the effort to expand the Hilbert space within a single junction or device by employing high-dimensional qubits, otherwise known as qudits. Research has demonstrated the possibility of driving higher-order transitions in a transmon or designing innovative multimode superconducting circuits, termed multimons. These advances can significantly expand the computational basis while simplifying the interconnects in a large-scale quantum processor. In this work we extend the measurement theory of a conventional superconducting qubit to that of a qudit, focusing on modeling the dispersive quadrature measurement in an open quantum system. Under the Markov assumption, the qudit Lindblad and stochastic master equations are formulated and analyzed; in addition, both the ensemble-averaged and the quantum-jump approach of decoherence analysis are detailed with analytical and numerical comparisons. We verify our stochastic model with a series of experimental results on a transmon-type qutrit, verifying the validity of our high-dimensional formalism.
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Submitted 5 July, 2024; v1 submitted 28 October, 2023;
originally announced October 2023.
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Two-Level Systems in Nucleated and Non-Nucleated Epitaxial alpha-Tantalum films
Authors:
L. D. Alegria,
D. M. Tennant,
K. R. Chaves,
J. R. I. Lee,
S. R. O'Kelley,
Y. J. Rosen,
J L DuBois
Abstract:
Building usefully coherent superconducting quantum processors depends on reducing losses in their constituent materials. Tantalum, like niobium, has proven utility as the primary superconducting layer within highly coherent qubits. But, unlike Nb, high temperatures are typically used to stabilize the desirable body-centered-cubic phase, alpha-Ta, during thin film deposition. It has long been known…
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Building usefully coherent superconducting quantum processors depends on reducing losses in their constituent materials. Tantalum, like niobium, has proven utility as the primary superconducting layer within highly coherent qubits. But, unlike Nb, high temperatures are typically used to stabilize the desirable body-centered-cubic phase, alpha-Ta, during thin film deposition. It has long been known that a thin Nb layer permits the room-temperature nucleation of alpha-Ta, although neither an epitaxial process nor few-photon microwave loss measurements have been reported for Nb-nucleated Ta films prior to this study. We compare resonators patterned from Ta films grown at high temperature (500 °C) and films nucleated at room temperature, in order to understand the impact of crystalline order on quantum coherence. In both cases, films grew with Al2O3 (001) || Ta (110) indicating that the epitaxial orientation is independent of temperature and is preserved across the Nb/Ta interface. We use conventional low-power spectroscopy to measure two level system (TLS) loss, as well as an electric-field bias technique to measure the effective dipole moments of TLS in the surfaces of resonators. In our measurements, Nb-nucleated Ta resonators had greater loss tangent (1.5 +/- 0.1 x 10^-5) than non-nucleated (5 +/- 1 x 10^-6) in approximate proportion to defect densities as characterized by X-ray diffraction (0.27 ° vs 0.18 ° [110] reflection width) and electron microscopy (30 nm vs 70 nm domain size). The dependence of the loss tangent on domain size indicates that the development of more ordered Ta films is likely to lead to improvements in qubit coherence times. Moreover, low-temperature alpha-Ta epitaxy may enable the growth of new, microstate-free heterostructures which would not withstand high temperature processing.
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Submitted 18 September, 2023; v1 submitted 24 January, 2023;
originally announced January 2023.
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Enhancing Qubit Readout with Autoencoders
Authors:
Piero Luchi,
Paolo E. Trevisanutto,
Alessandro Roggero,
Jonathan L. DuBois,
Yaniv J. Rosen,
Francesco Turro,
Valentina Amitrano,
Francesco Pederiva
Abstract:
In addition to the need for stable and precisely controllable qubits, quantum computers take advantage of good readout schemes. Superconducting qubit states can be inferred from the readout signal transmitted through a dispersively coupled resonator. This work proposes a novel readout classification method for superconducting qubits based on a neural network pre-trained with an autoencoder approac…
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In addition to the need for stable and precisely controllable qubits, quantum computers take advantage of good readout schemes. Superconducting qubit states can be inferred from the readout signal transmitted through a dispersively coupled resonator. This work proposes a novel readout classification method for superconducting qubits based on a neural network pre-trained with an autoencoder approach. A neural network is pre-trained with qubit readout signals as autoencoders in order to extract relevant features from the data set. Afterwards, the pre-trained network inner layer values are used to perform a classification of the inputs in a supervised manner. We demonstrate that this method can enhance classification performance, particularly for short and long time measurements where more traditional methods present lower performance.
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Submitted 6 September, 2023; v1 submitted 30 November, 2022;
originally announced December 2022.
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Simulating noise on a quantum processor: interactions between a qubit and resonant two-level system bath
Authors:
Yu** Cho,
Dipti Jasrasaria,
Keith G. Ray,
Daniel M. Tennant,
Vincenzo Lordi,
Jonathan L DuBois,
Yaniv J. Rosen
Abstract:
Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantu…
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Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantum system dynamics, and draws from the current understanding of two-level system (TLS) theory. Specifically, we start with one million TLSs distributed on the surface of a qubit and pick the 200 systems that are most strongly coupled to the qubit. We then perform a full Lindbladian simulation that explicitly includes the coherent coupling between the qubit and the TLS bath to model the time dependent density matrix of resonant TLS defects and the qubit. We find that the 200 most strongly coupled TLSs can accurately describe the qubit energy relaxation time. This work confirms that resonant TLSs located in areas where the electric field is strong can significantly affect the qubit relaxation time, even if they are located far from the Josephson junction. Similarly, a strongly-coupled resonant TLS located in the Josephson junction does not guarantee a reduced qubit relaxation time if a more strongly coupled TLS is far from the Josephson junction. In addition to the coupling strengths between TLSs and the qubit, the model predicts that the geometry of the device and the TLS relaxation time play a significant role in qubit dynamics. Our work can provide guidance for future quantum processor designs with improved qubit coherence times.
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Submitted 7 June, 2023; v1 submitted 15 November, 2022;
originally announced November 2022.
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Noise-specific beats in the higher-level Ramsey curves of a transmon qubit
Authors:
L. A. Martinez,
Z. Peng,
D. Appelö,
D. M. Tennant,
N. Anders Petersson,
J. L DuBois,
Y. J. Rosen
Abstract:
In the higher levels of superconducting transmon devices, and more generally charge sensitive devices, $T_2^*$ measurements made in the presence of low-frequency time-correlated $1/f$ charge noise and quasiparticle-induced parity flips can give an underestimation of the total dephasing time. The charge variations manifest as beating patterns observed in the overlay of several Ramsey fringe curves,…
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In the higher levels of superconducting transmon devices, and more generally charge sensitive devices, $T_2^*$ measurements made in the presence of low-frequency time-correlated $1/f$ charge noise and quasiparticle-induced parity flips can give an underestimation of the total dephasing time. The charge variations manifest as beating patterns observed in the overlay of several Ramsey fringe curves, and are reproduced with a phenomenological Ramsey curve model which accounts for the charge variations. $T_2^*$ dephasing times which more accurately represent the total dephasing time are obtained. The phenomenological model is compared with a Lindblad master equation model. Both models are found to be in agreement with one another and the experimental data. Finally, the phenomenological formulation enables a simple method in which the power spectral density (PSD) for the low-frequency noise can be inferred from the overlay of several Ramsey curves.
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Submitted 11 November, 2022;
originally announced November 2022.
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A Simulation Methodology for Superconducting Qubit Readout Fidelity
Authors:
Hiu Yung Wong,
Yaniv Jacob Rosen,
Kristin M. Beck,
Prabjot Dhillon
Abstract:
Qubit readout is a critical part of any quantum computer including the superconducting-qubit-based one. The readout fidelity is affected by the readout pulse width, readout pulse energy, resonator design, qubit design, qubit-resonator coupling, and the noise generated along the readout path. It is thus important to model and predict the fidelity based on various design parameters along the readout…
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Qubit readout is a critical part of any quantum computer including the superconducting-qubit-based one. The readout fidelity is affected by the readout pulse width, readout pulse energy, resonator design, qubit design, qubit-resonator coupling, and the noise generated along the readout path. It is thus important to model and predict the fidelity based on various design parameters along the readout path. In this work, a simulation methodology for superconducting qubit readout fidelity is proposed and implemented using Matlab and Ansys HFSS to allow the co-optimization in the readout path. As an example, parameters are taken from an actual superconducting-qubit-based quantum computer and the simulation is calibrated to one experimental point. It is then used to predict the readout error of the system as a function of readout pulse width and power and the results match the experiment well. It is found that the system can still maintain high fidelity even if the input power is reduced by 7dB or if the readout pulse width is 40% narrower. This can be used to guide the design and optimization of a superconducting qubit readout system.
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Submitted 18 July, 2022;
originally announced July 2022.
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Experimentally revealing anomalously large dipoles in a quantum-circuit dielectric
Authors:
Liuqi Yu,
Shlomi Matityahu,
Yaniv J. Rosen,
Chih-Chiao Hung,
Andrii Maksymov,
Alexander L. Burin,
Moshe Schechter,
Kevin D. Osborn
Abstract:
Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclu…
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Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields.
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Submitted 28 July, 2022; v1 submitted 20 October, 2021;
originally announced October 2021.
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Low frequency correlated charge noise measurements across multiple energy transitions in a tantalum transmon
Authors:
Daniel M. Tennant,
Luis A. Martinez,
Kristin M. Beck,
Sean R. O'Kelley,
Christopher D. Wilen,
R. McDermott,
Jonathan L DuBois,
Yaniv J. Rosen
Abstract:
Transmon qubits fabricated with tantalum metal have been shown to possess energy relaxation times greater than 300 $μ$s and, as such, present an attractive platform for high precision, correlated noise studies across multiple higher energy transitions. Tracking the multi-level fluctuating qudit frequencies with a precision enabled by the high coherence of the device allows us to extract the charge…
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Transmon qubits fabricated with tantalum metal have been shown to possess energy relaxation times greater than 300 $μ$s and, as such, present an attractive platform for high precision, correlated noise studies across multiple higher energy transitions. Tracking the multi-level fluctuating qudit frequencies with a precision enabled by the high coherence of the device allows us to extract the charge offset and quasi-particle dynamics. We observe qualitatively different charge offset behavior in the tantalum device than those measured in previous low frequency charge noise studies. In particular, we find the charge offset dynamics are dominated by rare, discrete jumps between a finite number of quasi-stationary charge configurations, a previously unobserved charge noise process in superconducting qubits.
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Submitted 29 November, 2021; v1 submitted 15 June, 2021;
originally announced June 2021.
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Cryogenic single-port calibration for superconducting microwave resonator measurements
Authors:
Haozhi Wang,
S. Singh,
C. R. H. McRae,
J. C. Bardin,
S. -X. Lin,
N. Messaoudi,
A. R. Castelli,
Y. J. Rosen,
E. T. Holland,
D. P. Pappas,
J. Y. Mutus
Abstract:
Superconducting circuit testing and materials loss characterization requires robust and reliable methods for the extraction of internal and coupling quality factors of microwave resonators. A common method, imposed by limitations on the device design or experimental configuration, is the single-port reflection geometry, i.e. reflection-mode. However, impedance mismatches in cryogenic systems must…
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Superconducting circuit testing and materials loss characterization requires robust and reliable methods for the extraction of internal and coupling quality factors of microwave resonators. A common method, imposed by limitations on the device design or experimental configuration, is the single-port reflection geometry, i.e. reflection-mode. However, impedance mismatches in cryogenic systems must be accounted for through calibration of the measurement chain while it is at low temperatures. In this paper, we demonstrate a data-based, single-port calibration using commercial microwave standards and a vector network analyzer (VNA) with samples at millikelvin temperature in a dilution refrigerator, making this method useful for measurements of quantum phenomena. Finally, we cross reference our data-based, single-port calibration and reflection measurement with over-coupled 2D- and 3D-resonators against well established two-port techniques corroborating the validity of our method.
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Submitted 2 March, 2021;
originally announced March 2021.
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Nonlinear Signal Distortion Corrections Through Quantum Sensing
Authors:
Kevin R. Chaves,
Xian Wu,
Yaniv J. Rosen,
Jonathan L DuBois
Abstract:
Having accurate gate generation is essential for precise control of a quantum system. The generated gate usually suffers from linear and nonlinear distortion. Previous works have demonstrated how to use a qubit to correct linear frequency distortions but have not commented on how to handle nonlinear distortions. This is an important issue as we show that nonlinear amplitude distortions from the RF…
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Having accurate gate generation is essential for precise control of a quantum system. The generated gate usually suffers from linear and nonlinear distortion. Previous works have demonstrated how to use a qubit to correct linear frequency distortions but have not commented on how to handle nonlinear distortions. This is an important issue as we show that nonlinear amplitude distortions from the RF electronics can affect Rabi pulses by as much as 10%. We present work that demonstrates how a transmon qubit can be used as a highly sensitive cryogenic detector to characterize these nonlinear amplitude distortions. We show that a correction can drive these errors down to <1% over a 700 MHz range. This correction technique provides a method to minimize the effects of signal distortions and can be easily applied to broadband control pulses to produce higher fidelity arbitrary quantum gates.
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Submitted 27 October, 2020;
originally announced October 2020.
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Origin of Mechanical and Dielectric Losses from Two-Level Systems in Amorphous Silicon
Authors:
M. Molina-Ruiz,
Y. J. Rosen,
H. C. Jacks,
M. R. Abernathy,
T. H. Metcalf,
X. Liu,
J. L Dubois,
F. Hellman
Abstract:
Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce thermal and electromagnetic noise and energy loss. However, it is unclear whether the two-level systems that dominate mechanical and dielectric losse…
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Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce thermal and electromagnetic noise and energy loss. However, it is unclear whether the two-level systems that dominate mechanical and dielectric losses are the same; the former relies on phonon-TLS coupling, with an elastic field coupling constant, $γ$, while the latter depends on a TLS dipole moment, $p_0$, which couples to the electromagnetic field. Mechanical and dielectric loss measurements as well as structural characterization were performed on amorphous silicon thin films grown by electron beam deposition with a range of growth parameters. Samples grown at 425 $^{\circ}$C show a large reduction of mechanical loss (34 times) and a far smaller reduction of dielectric loss (2.3 times) compared to those grown at room temperature. Additionally, mechanical loss shows lower loss per unit volume for thicker films, while dielectric loss shows lower loss per unit volume for thinner films. Analysis of these results indicate that mechanical loss correlates with atomic density, while dielectric loss correlates with dangling bond density, suggesting a different origin for these two energy dissipation processes in amorphous silicon.
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Submitted 17 August, 2020;
originally announced August 2020.
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Improving Qubit Readout with Hidden Markov Models
Authors:
Luis A. Martinez,
Yaniv J. Rosen,
Jonathan L. DuBois
Abstract:
We demonstrate the application of pattern recognition algorithms via hidden Markov models (HMM) for qubit readout. This scheme provides a state-path trajectory approach capable of detecting qubit state transitions and makes for a robust classification scheme with higher starting state assignment fidelity than when compared to a multivariate Gaussian (MVG) or a support vector machine (SVM) scheme.…
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We demonstrate the application of pattern recognition algorithms via hidden Markov models (HMM) for qubit readout. This scheme provides a state-path trajectory approach capable of detecting qubit state transitions and makes for a robust classification scheme with higher starting state assignment fidelity than when compared to a multivariate Gaussian (MVG) or a support vector machine (SVM) scheme. Therefore, the method also eliminates the qubit-dependent readout time optimization requirement in current schemes. Using a HMM state discriminator we estimate fidelities reaching the ideal limit. Unsupervised learning gives access to transition matrix, priors, and IQ distributions, providing a toolbox for studying qubit state dynamics during strong projective readout.
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Submitted 31 October, 2020; v1 submitted 29 May, 2020;
originally announced June 2020.
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High-fidelity software-defined quantum logic on a superconducting qudit
Authors:
Xian Wu,
S. L. Tomarken,
N. Anders Petersson,
L. A. Martinez,
Yaniv J. Rosen,
Jonathan L DuBois
Abstract:
Nearly all modern solid-state quantum processors approach quantum computation with a set of discrete qubit operations (gates) that can achieve universal quantum control with only a handful of primitive gates. In principle, this approach is highly flexible, allowing full control over the qubits' Hilbert space without necessitating the development of specific control protocols for each application.…
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Nearly all modern solid-state quantum processors approach quantum computation with a set of discrete qubit operations (gates) that can achieve universal quantum control with only a handful of primitive gates. In principle, this approach is highly flexible, allowing full control over the qubits' Hilbert space without necessitating the development of specific control protocols for each application. However, current error rates on quantum hardware place harsh limits on the number of primitive gates that can be concatenated together (with compounding error rates) and remain viable. Here, we report our efforts at implementing a software-defined $0\leftrightarrow2$ SWAP gate that does not rely on a primitive gate set and achieves an average gate fidelity of $99.4\%$. Our work represents an alternative, fully generalizable route towards achieving nontrivial quantum control through the use of optimal control techniques. We describe our procedure for computing optimal control solutions, calibrating the quantum and classical hardware chain, and characterizing the fidelity of the optimal control gate.
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Submitted 19 October, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Simulating nonnative cubic interactions on noisy quantum machines
Authors:
Yuan Shi,
Alessandro R. Castelli,
Xian Wu,
Ilon Joseph,
Vasily Geyko,
Frank R. Graziani,
Stephen B. Libby,
Jeffrey B. Parker,
Yaniv J. Rosen,
Luis A. Martinez,
Jonathan L DuBois
Abstract:
As a milestone for general-purpose computing machines, we demonstrate that quantum processors can be programmed to efficiently simulate dynamics that are not native to the hardware. Moreover, on noisy devices without error correction, we show that simulation results are significantly improved when the quantum program is compiled using modular gates instead of a restricted set of standard gates. We…
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As a milestone for general-purpose computing machines, we demonstrate that quantum processors can be programmed to efficiently simulate dynamics that are not native to the hardware. Moreover, on noisy devices without error correction, we show that simulation results are significantly improved when the quantum program is compiled using modular gates instead of a restricted set of standard gates. We demonstrate the general methodology by solving a cubic interaction problem, which appears in nonlinear optics, gauge theories, as well as plasma and fluid dynamics. To encode the nonnative Hamiltonian evolution, we decompose the Hilbert space into a direct sum of invariant subspaces in which the nonlinear problem is mapped to a finite-dimensional Hamiltonian simulation problem. In a three-states example, the resultant unitary evolution is realized by a product of ~20 standard gates, using which ~10 simulation steps can be carried out on state-of-the-art quantum hardware before results are corrupted by decoherence. In comparison, the simulation depth is improved by more than an order of magnitude when the unitary evolution is realized as a single cubic gate, which is compiled directly using optimal control. Alternatively, parametric gates may also be compiled by interpolating control pulses. Modular gates thus obtained provide high-fidelity building blocks for quantum Hamiltonian simulations.
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Submitted 13 February, 2021; v1 submitted 15 April, 2020;
originally announced April 2020.
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Anomalous Charge Noise in Superconducting Qubits
Authors:
B. G. Christensen,
C. D. Wilen,
A. Opremcak,
J. Nelson,
F. Schlenker,
C. H. Zimonick,
L. Faoro,
L. B. Ioffe,
Y. J. Rosen,
J. L. DuBois,
B. L. T. Plourde,
R. McDermott
Abstract:
We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^α$ over 5 decades with $α= 1.93$ and a magnitude $S_q(\text{1Hz})= 2.9\times10^{-4}~e^2/\text{Hz}$. The noise exponent and magnitude of the low-frequency noise are much larger than those seen in prior work on single electron trans…
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We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^α$ over 5 decades with $α= 1.93$ and a magnitude $S_q(\text{1Hz})= 2.9\times10^{-4}~e^2/\text{Hz}$. The noise exponent and magnitude of the low-frequency noise are much larger than those seen in prior work on single electron transistors, yet are consistent with reports of frequency noise in other superconducting qubits. Moreover, we observe frequent large-amplitude jumps in offset charge exceeding 0.1$e$; these large discrete charge jumps are incompatible with a picture of localized dipole-like two-level fluctuators. The data reveal an unexpected dependence of charge noise on device scale and suggest models involving either charge drift or fluctuating patch potentials.
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Submitted 31 May, 2019;
originally announced May 2019.
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Protecting superconducting qubits from phonon mediated decay
Authors:
Yaniv J. Rosen,
Matthew Horsley,
Sara E. Harrison,
Eric T. Holland,
Allan S. Chang,
Tiziana Bond,
Jonathan L DuBois
Abstract:
For quantum computing to become fault tolerant, the underlying quantum bits must be effectively isolated from the noisy environment. It is well known that including an electromagnetic bandgap around the qubit operating frequency improves coherence for superconducting circuits. However, investigations of bandgaps to other environmental coupling mechanisms remain largely unexplored. Here we present…
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For quantum computing to become fault tolerant, the underlying quantum bits must be effectively isolated from the noisy environment. It is well known that including an electromagnetic bandgap around the qubit operating frequency improves coherence for superconducting circuits. However, investigations of bandgaps to other environmental coupling mechanisms remain largely unexplored. Here we present a method to enhance the coherence of superconducting circuits by introducing a phononic bandgap around the device operating frequency. The phononic bandgaps block resonant decay of defect states within the gapped frequency range, removing the electromagnetic coupling to phonons at the gap frequencies. We construct a multi-scale model that derives the decrease in the density of states due to the bandgap and the resulting increase in defect state $T_1$ times. We demonstrate that emission rates from in-plane defect states can be suppressed by up to two orders of magnitude. We combine these simulations with theory for resonators operated in the continuous-wave regime and show that improvements in quality factors are expected by up to the enhancement in defect $T_1$ times. Furthermore, we use full master equation simulation to demonstrate the suppression of qubit energy relaxation even when interacting with 200 defects states. We conclude with an exploration of device implementation including tradeoffs between fabrication complexity and qubit performance.
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Submitted 1 May, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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High-Kinetic Inductance Additive Manufactured Superconducting Microwave Cavity
Authors:
Eric T. Holland,
Yaniv J. Rosen,
Nicholas Materise,
Nathan Woollett,
Thomas Voisin,
Y. Morris Wang,
Jorge Mireles,
Gianpaolo Carosi,
Jonathan L DuBois
Abstract:
Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing', opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of th…
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Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing', opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of these two technologies in a titanium, aluminum, vanadium (Ti-6Al-4V) superconducting radio frequency resonator which exploits a design unattainable through conventional fabrication means. We find that Ti-6Al-4V has two distinct superconducting transition temperatures observable in heat capacity measurements. The higher transition temperature is in agreement with DC resistance measurements. While the lower transition temperature, not previously known in literature, is consistent with the observed temperature dependence of the superconducting microwave surface impedance. From the surface reactance, we extract a London penetration depth of $8\pm3μ$m - roughly an order of magnitude larger than other titanium alloys and several orders of magnitude larger than other conventional elemental superconductors. This large London penetration depth suggests that Ti-6Al-4V may be a suitable material for high kinetic inductance applications such as single photon counting or parametric amplification used in quantum computing.
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Submitted 14 August, 2017;
originally announced August 2017.
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Superconducting TiN Films Sputtered over a Large Range of Substrate DC Bias
Authors:
H. M. Iftekhar Jaim,
J. A. Aguilar,
B. Sarabi,
Y. J. Rosen,
A. N. Ramanayaka,
E. H. Lock,
C. J. K. Richardson,
K. D. Osborn
Abstract:
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting i…
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We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.
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Submitted 24 October, 2014; v1 submitted 13 August, 2014;
originally announced August 2014.
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Highly Effective Superconducting Vortex Pinning in Conformal Crystals
Authors:
S. Guénon,
Y. J. Rosen,
Ali C. Basaran,
Ivan K. Schuller
Abstract:
We have investigated the vortex dynamics in superconducting thin film devices with non-uniform patterns of artificial pinning centers (APCs). The magneto-transport properties of a conformal crystal and a randomly diluted APC pattern are compared with that of a triangular reference lattice. We have found that in both cases the magneto-resistance below the first matching field of the triangular refe…
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We have investigated the vortex dynamics in superconducting thin film devices with non-uniform patterns of artificial pinning centers (APCs). The magneto-transport properties of a conformal crystal and a randomly diluted APC pattern are compared with that of a triangular reference lattice. We have found that in both cases the magneto-resistance below the first matching field of the triangular reference lattice is significantly reduced. For the conformal crystal, the magneto-resistance is below the noise floor indicating highly effective vortex pinning over a wide magnetic field range. Further, we have discovered that for asymmetric patterns the R vs. H curves are mostly symmetric.This implies that the enhanced vortex pinning is due to the commensurability with a stripe in the non-uniform APC pattern and not due to a rearrangement and compression of the whole vortex lattice.
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Submitted 24 May, 2013;
originally announced May 2013.
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Vortex ratchet reversal: The role of interstitial vortices
Authors:
D. Perez de Lara,
M. Erekhinsky,
E. M. Gonzalez,
Y. J. Rosen,
Ivan K. Schuller,
J. L. Vicent
Abstract:
Triangular arrays of Ni nanotriangles embedded in superconducting Nb films exhibit unexpected dynamical vortex effects. Collective pinning with a vortex lattice configuration different from the expected fundamental triangular "Abrikosov state" is found. The vortex motion which prevails against the triangular periodic potential is produced by channelling effects between triangles. Interstitial vort…
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Triangular arrays of Ni nanotriangles embedded in superconducting Nb films exhibit unexpected dynamical vortex effects. Collective pinning with a vortex lattice configuration different from the expected fundamental triangular "Abrikosov state" is found. The vortex motion which prevails against the triangular periodic potential is produced by channelling effects between triangles. Interstitial vortices coexisting with pinned vortices in this asymmetric potential, lead to ratchet reversal, i.e. a DC output voltage which changes sign with the amplitude of an applied alternating drive current. In this landscape, ratchet reversal is always observed at all magnetic fields (all numbers of vortices) and at different temperatures. The ratchet reversal is unambiguously connected to the presence of two locations for the vortices: interstitial and above the artificial pinning sites.
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Submitted 7 May, 2011;
originally announced May 2011.