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Optical visualization of the enhanced spin Hall effect in bismuth doped silicon
Authors:
Taiki Nishijima,
Yakun Liu,
Dushyant Kumar,
Kyusup Lee,
Fabien Rortais,
Syuta Honda,
Yuichiro Ando,
Ei Shigematsu,
Ryo Ohshima,
Hyunsoo Yang,
Masashi Shiraishi
Abstract:
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation…
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Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.
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Submitted 2 June, 2020;
originally announced June 2020.
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Investigation of gating effect in Si spin MOSFET
Authors:
Soobeom Lee,
Fabien Rortais,
Ryo Ohshima,
Yuichiro Ando,
Minori Goto,
Shinji Miwa,
Yoshishige Suzuki,
Hayato Koike,
Masashi Shiraishi
Abstract:
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while kee** constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high…
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A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while kee** constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.
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Submitted 28 October, 2019;
originally announced October 2019.
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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Authors:
Sachin Gupta,
F. Rortais,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 chan…
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Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.
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Submitted 12 September, 2019;
originally announced September 2019.
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Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
Authors:
Soobeom Lee,
Fabien Rortais,
Ryo Ohshima,
Yuichiro Ando,
Shinji Miwa,
Yoshishige Suzuki,
Hayato Koike,
Masashi Shiraishi
Abstract:
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation…
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Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation using the spin drift diffusion equation including the effect of the spin-dependent interfacial resistance of tunneling barriers. Unlike the case of metallic spin valves, the bias dependence of the resistance-area product for a ferromagnet/MgO/Si interface, resulting in the reappearance of the conductance mismatch, plays a central role to induce the deviation.
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Submitted 16 October, 2018;
originally announced October 2018.
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Induced spin-orbit coupling in silicon thin films by bismuth do**
Authors:
F. Rortais,
S. Lee,
R. Ohshima,
S. Dushenko,
Y. Ando,
M. Shiraishi
Abstract:
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by do** with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi dopi…
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We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by do** with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi do** changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi do** becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (Lφ = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by do** with heavy metals.
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Submitted 16 October, 2018;
originally announced October 2018.
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Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Authors:
M. T. Dau,
C. Vergnaud,
A. Marty,
F. Rortais,
C. Beigné,
H. Boukari,
E. Bellet-Amalric,
V. Guigoz,
O. Renault,
C. Alvarez,
H. Okuno,
P. Pochet,
M. Jamet
Abstract:
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects a…
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Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hop** character described within two-dimensional variable range hop** mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale.
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Submitted 16 February, 2017;
originally announced February 2017.
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Non-local opto-electrical spin injection and detection in germanium at room temperature
Authors:
Fabien Rortais,
Carlo Zucchetti,
Lavinia Ghirardini,
Alberto Ferrari,
Céline Vergnaud,
Julie Widiez,
Alain Marty,
Jean-Philippe Attané,
Henri Jaffrès,
Jean-Marie George,
Michele Celebrano,
Giovanni Isella,
Franco Ciccacci,
Marco Finazzi,
Federico Bottegoni,
Matthieu Jamet
Abstract:
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best…
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Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices.
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Submitted 29 December, 2016;
originally announced December 2016.
