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Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
Authors:
Ying Liu,
Ranming Niu,
Roger Uriach,
David Pesquera,
Jose Manuel Caicedo Roque,
Jose Santiso,
Julie M Cairney,
Xiaozhou Liao,
Jordi Arbiol,
Gustau Catalan
Abstract:
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies i…
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Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.
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Submitted 11 June, 2024;
originally announced June 2024.
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Switching dynamics and improved efficiency of free-standing antiferroelectric capacitors
Authors:
Umair Saeed,
David Pesquera,
Ying Liu,
Ignasi Fina,
Saptam Ganguly,
Jose Santiso,
Jessica Padilla,
Jose Manuel Caicedo Roque,
Xiaozhou Liao,
Gustau Catalan
Abstract:
We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestand…
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We report the switching dynamics of antiferroelectric Lead Zirconate (PbZrO3) free standing capacitors compared to their epitaxial counterparts. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially-clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency.
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Submitted 14 December, 2023;
originally announced December 2023.
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Photostrictive actuators based on freestanding ferroelectric membranes
Authors:
Saptam Ganguly,
David Pesquera,
Daniel Moreno Garcia,
Umair Saeed,
Nona Mirzamohammadi,
José Santiso,
Jessica Padilla,
José Manuel Caicedo Roque,
Claire Laulhé,
Felisa Berenguer,
Luis Guillermo Villanueva,
Gustau Catalan
Abstract:
Complex oxides offer a wide range of functional properties, and recent advances in fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, we demonstrate photoactuation in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-stand…
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Complex oxides offer a wide range of functional properties, and recent advances in fabrication of freestanding membranes of these oxides are adding new mechanical degrees of freedom to this already rich functional ecosystem. Here, we demonstrate photoactuation in freestanding thin film resonators of ferroelectric Barium Titanate (BaTiO3) and paraelectric Strontium Titanate (SrTiO3). The free-standing films, transferred onto perforated supports, act as nano-drums, oscillating at their natural resonance frequency when illuminated by a frequency-modulated laser. The light-induced deflections in the ferroelectric BaTiO3 membranes are two orders of magnitude larger than in the paraelectric SrTiO3 ones. Time-resolved X-ray micro-diffraction under illumination and temperature-dependent and holographic interferometry provide combined evidence for the photostrictive strain in BaTiO3 originating from partial screening of ferroelectric polarization by photo-excited carriers, which decreases the tetragonality of the unit cell. These findings showcase the potential of photostrictive freestanding ferroelectric films as wireless actuators operated by light.
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Submitted 24 March, 2024; v1 submitted 4 May, 2023;
originally announced May 2023.
